A kind of ultraviolet light-emitting diode with p-i-n type multi-quantum well structure

Abstract

The invention discloses an ultraviolet light-emitting diode with a p-i-n type multi-quantum well structure, which is sequentially arranged with a substrate, an AlN buffer layer, an n-type AlGaN layer, and a p-i-n type multi-quantum well Active region, electron blocking layer, p-type AlGaN layer, p-type GaN ohmic contact layer, n-type electrode arranged on n-type AlGaN layer, and p-type electrode arranged on p-type GaN ohmic contact layer. The ultraviolet light-emitting diode with p-i-n type multi-quantum well structure provided by the present invention can improve carrier concentration and injection efficiency, and can utilize the concentration difference of carriers in adjacent regions with different doping concentrations to form a The electric field with the opposite direction of the original built-in electric field can weaken the original built-in electric field between the p-type region and the n-type region, and reduce the quantum confinement Stark effect caused by the built-in polarization electric field, so that electrons and holes The radiative recombination efficiency is improved, and the luminous power of the ultraviolet light-emitting diode is enhanced.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor optoelectronic materials and devices, in particular to an ultraviolet light emitting diode with a p-i-n type multi-quantum well structure. Background technique [0002] AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) have the advantages of low energy consumption, environmental friendliness, and adjustable emission wavelengths, and can be widely used in printing ink curing, high-density data information storage, sterilization, healthcare, water and air purification and other fields. Due to the lack of GaN or AlN homogeneous substrates, AlGaN-based UV-LEDs usually use heterogeneous substrates, such as sapphire, silicon carbide, silicon and other substrates for growth. However, due to the large lattice mismatch between the heterogeneous substrate and the polar c-plane sapphire and other heterogeneous substrates, there are strong spontaneous polarization and piezoelectric The polar...

AI Technical Summary

Problems solved by technology

The polarized electric field will cause the conduction band and valence band edge of the quantum well in the UV-LED to be tilted, so that the wave functions of electrons and holes are separated in space, resulting in a reduction in the probability of radiative recombination of electrons and holes, seriously Affect the internal quantum efficiency or luminous efficiency of UV-LED devices

[0003] In addition, when the Al composition of the p-type AlGaN layer of AlGaN-based UV-LEDs increases, the activation efficiency of p-type impurities (such as Mg) becomes low, which reduces the number of holes injected into the active region, and finally inhibits the UV- LED Light Output Capability

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