24results about How to "Improve doping efficiency" patented technology

The invention belongs to the technical field of crystal growth, and provides a low-resistivity silicon carbide single crystal growth method and system and a single crystal, silicon carbide powder is uniformly paved at the bottom of a graphite crucible, metal carbide material particles are uniformly paved on the surface of the silicon carbide powder, and silicon carbide seed crystals are adhered to the top of the graphite crucible; the graphite crucible is sealed, and the interior of the graphite crucible is vacuumized; heating the graphite crucible subjected to vacuumizing treatment, filling carrier gas into the graphite crucible, then slowly replacing the carrier gas with doped source gas, slowly increasing the growth pressure to a set pressure, and growing a buffer layer; after the growth of the buffer layer is completed, changing the growth condition to grow the heavily doped silicon carbide single crystal; and after the growth of the crystal is completed, cooling the graphite crucible subjected to vacuumizing treatment, so that the crystal is naturally cooled, and the low-resistivity silicon carbide single crystal is obtained. The doping concentration of the silicon carbide single crystal can be improved, and the resistivity of the silicon carbide material can be reduced.

The invention provides an epitaxial growth process for improving doping uniformity of n-type doped silicon carbide, and relates to the technical field of semiconductors. The method is based on a chemical vapor deposition growth technology; 11 to 20 gt; the silicon carbide epitaxial growth is carried out by taking silicon carbide with a 4-degree silicon surface in the direction as a substrate, taking trichlorosilane (TCS) and ethylene (C2H4) as growth sources and taking ammonia gas (NH3) as a doping source. Ammonia gas is adopted as an n-type dopant, the decomposition efficiency of the n-type dopant is close to 100% at the temperature of 700 DEG C or above, and the energy of N-H bond breakage of ammonia gas molecules is 390 KJ / mo which is far lower than 946 KJ / mo needed by N-N bond breakage of nitrogen molecules. Therefore, compared with a traditional doping source such as nitrogen, the ammonia gas has higher doping efficiency, residues of excessive nitrogen-containing precursors in the reaction chamber can be reduced, the memory effect is reduced, and thus more excellent in-chip uniformity and stable inter-chip repeatability of the epitaxial wafer are obtained. The selection range of the doping source is widened, the accurate control of the doping concentration is realized, and the stability of the doping concentration in the continuous growth process is improved.

The invention relates to the field of electrolyte, and provides a lithium borohydride-lithium iodide composite solid electrolyte material as well as a preparation method and application thereof. The preparation method comprises the following steps: A, adding lithium borohydride into a solvent anhydrous tetrahydrofuran for dissolving, and then adding lithium iodide to form a uniform solution; b, transferring the solution into a closed container, and removing the solvent in vacuum until the solution is converted into a solid; and carrying out heating heat treatment to obtain the composite solid electrolyte material. According to the method, a liquid phase method is adopted, lithium borohydride is firstly added into an anhydrous tetrahydrofuran solvent, then anhydrous lithium iodide is added into the anhydrous tetrahydrofuran solvent, and trace water in tetrahydrofuran is removed by using lithium borohydride, so that the sample purity is ensured, and the ionic conductivity of the material is improved. The invention also provides an application of the lithium borohydride-lithium iodide composite solid electrolyte material in an all-solid-state battery.

The invention relates to a high-performance silicon-based heat insulation micro-ring design method and system, and belongs to the technical field of photoelectrons. Comprising the following steps: drawing a half outer contour curve of a to-be-designed micro-ring by utilizing double Euler bending according to a free spectral range of the to-be-designed micro-ring; using the N-order Bezier curve and optimizing control point coordinates of the N-order Bezier curve according to a transmission loss minimum principle, and drawing a half inner contour curve of the to-be-designed micro-ring; wherein N is a positive integer greater than 1; the transmission loss is half micro-ring transverse electric field 0-order mode transmission loss; obtaining a half optimized micro-ring according to the half outer contour curve and the half inner contour curve; and splicing the two half optimized micro-rings into a complete micro-ring. According to the invention, serious mode loss occurring when a wider multi-mode waveguide is used and serious bending loss occurring when a small bending radius design is adopted are avoided, and the problem that the doping space of the micro-ring is narrow due to the limited waveguide width is solved. And meanwhile, the free spectral range of the micro-ring is enlarged.

The invention discloses a gallium oxide crystal microdefect and doping regulation and control system and method, and belongs to the technical field of gallium oxide crystal regulation and control, and the method specifically comprises the following steps: growing a gallium oxide crystal under a specific temperature condition by using a chemical vapor deposition or molecular beam epitaxy method to obtain the gallium oxide crystal, the method comprises the following steps: carrying out mathematical modeling on micro defects of the gallium oxide crystal, analyzing and regulating the micro defects in the gallium oxide crystal, analyzing the doping concentration and distribution in the gallium oxide crystal, regulating the doping in the gallium oxide crystal, and verifying the performance optimization of the regulated gallium oxide crystal. The microdefects such as dislocation and vacancy in the gallium oxide crystal are effectively reduced, accurate regulation and control of the microdefects and electrical properties of the gallium oxide crystal are realized, and the quality and performance based on gallium oxide can be remarkably improved.

The invention provides a supplementary doping method, a supplementary doping device and a single crystal furnace, and the supplementary doping method comprises the following steps: when the single crystal furnace needs supplementary doping, putting a blended doping material into a material storage pipe of the supplementary doping device, connecting the upper end of a rod body of a movable rod of the supplementary doping device with a tungsten wire rope of the single crystal furnace, and moving the supplementary doping device into an auxiliary chamber of the single crystal furnace through the tungsten wire rope; the tungsten wire rope is moved downwards by a first preset distance, so that a supporting frame of the supplementing and doping device makes contact with a discharging flange in the auxiliary chamber; the tungsten wire rope continues to move downwards by a second preset distance, so that the upper end of a material storage pipe of the supplementing and doping device makes contact with the lower end of the supporting frame; the tungsten wire rope continues to move downwards by a third preset distance, so that the plug of the movable rod is separated from the lower end of the material storage pipe, the doped material in the material storage pipe falls into molten silicon in a crucible in a main chamber of the single crystal furnace, and the problem that in the prior art, the doped material is likely to volatilize and even slide down in the doped material conveying process in a supplementary doping mode is solved.

The invention discloses ZnO-based voltage-sensitive semiconductor ceramic as well as a preparation method and application thereof, and belongs to the technical field of semiconductor ceramic. The ZnO-based voltage-sensitive semiconductor ceramic provided by the invention is prepared from the following components: ZnO, Bi2O3, MnO2, Co3O4, Cr2O3, Sb2O3, Al (NO3) 3, a disulfide bond organic silicon cross-linking agent, a photothermal conversion agent, a photoinitiator, a dispersing agent and a solvent I. The ZnO-based voltage-sensitive semiconductor ceramic has the characteristics of continuous thickness and uniform components, the voltage gradient and the nonlinear coefficient of the ZnO-based voltage-sensitive semiconductor ceramic are superior to those of a traditional product, the parameter drift rate after surge impact is small, and the ZnO-based voltage-sensitive semiconductor ceramic can be applied to high-end application scenes such as vehicle-mounted chargers of new energy automobiles.

The invention relates to the field of chemical doping, and particularly discloses a COD-based organic metal complex catalyzed organic semiconductor N-type doping method based on a solution method and application thereof. The method comprises the following steps: mixing and reacting a COD-based organic metal complex, an N-type organic semiconductor and an N-type dopant on a substrate to obtain a doped organic semiconductor. According to the organic semiconductor N-type doping method, a COD-based organic metal complex is used as a soluble catalyst, chloride ions in the COD-based organic metal complex are uncoupled to generate an active substance in situ, breakage of a C-H bond in an N-type doping agent is promoted, H ions generated due to breakage of the C-H bond in the N-type doping agent are combined with the active substance, and the doping efficiency of the N-type doping agent is improved. The organic semiconductor N-type doping method has the advantages that electron transfer in an N-type doping agent is promoted, the N-type doping agent is coordinated with an N-type organic semiconductor, N-type doping of the organic semiconductor is achieved, N-type doping efficiency is remarkably improved, the problem that a traditional vapor deposition method is incompatible with printed electronic products is solved, and the organic semiconductor N-type doping method is widely applicable to preparation of electronic printed products.

The invention discloses a heterojunction battery and a preparation method thereof. The preparation method comprises the steps of preparing the semiconductor substrate layer; preparing intrinsic amorphous silicon layers on two opposite surfaces of the semiconductor substrate layer respectively; depositing a doping layer on the intrinsic amorphous silicon layer; and manufacturing a transparent conductive layer on the doped layer. The preparation of the doping layer on the intrinsic amorphous silicon layer comprises the following steps: depositing a collection layer on at least one intrinsic amorphous silicon layer; a microcrystalline silicon layer is deposited on the collection layer, and carrier gas used in the process of depositing the microcrystalline silicon layer comprises argon. In this way, the deposition efficiency of the microcrystalline silicon layer and the photoelectric conversion efficiency of the heterojunction cell can be improved.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The invention belongs to the technical field of target materials, and particularly relates to an oxide-doped indium oxide-based target material as well as a preparation method and application thereof. The oxide doped indium oxide-based target material is prepared from the following components in parts by mass: 94.5 to 99.3 parts of In2O3, 0.2 to 1.5 parts of tetravalent oxide including TiO2, 0.2 to 1.5 parts of ZrO2, 0.2 to 1.5 parts of SiO2 and 0.1 to 1 part of high valence oxide, the high-valence oxide is prepared from one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7. The oxide-doped indium oxide-based target material is low in doping concentration and high in density, and a transparent conductive oxide film (TCO film) prepared from the oxide-doped indium oxide-based target material has high carrier mobility and near-infrared light transmittance.

The present application relates to a kind of methods for preparing fluorescent nitrogen-rich carbon quantum dots from coal in aqueous system based on photocatalytic technology, belonging to the technical field of nanomaterial preparation.The method includes pretreatment of coal, ammonia oxidation reaction of coal and ammonia water to obtain nitrogen-rich soluble, the nitrogen-rich soluble is subjected to photocatalytic reaction again, and finally, carbon quantum dot solid powder is prepared by centrifugation, filtration, dialysis and drying treatment.The present application realizes the preparation of fluorescent nitrogen-rich carbon quantum dots from low-rank coal in aqueous system by using ammonia oxidation and photocatalytic technology, and the reaction conditions are mild and green and non-toxic, without harsh reaction conditions such as high temperature / high pressure, strong acid / strong base environment, organic solvent or special equipment.

The utility model provides a doping mechanism and monocrystalline silicon production equipment, and relates to the field of monocrystalline silicon production.The doping mechanism comprises a feeding cylinder, a driving part and a limiting assembly, the feeding cylinder is arranged on a crucible, the driving part is arranged in the feeding cylinder in a sleeved mode, the limiting assembly is arranged on the driving part, the driving part is used for moving in the feeding cylinder, and the limiting assembly is arranged on the driving part; the limiting assembly is arranged in the feeding cylinder so that the limiting assembly can be in a feeding state and / or a containing state, when the limiting assembly is in the containing state, the bearing face of the limiting assembly abuts against the feeding cylinder so that a containing space can be defined by the limiting assembly and the feeding cylinder, the containing space is used for containing doping materials, and when the limiting assembly is in the feeding state, the bearing face is separated from the feeding cylinder. By adjusting the moving position of the driving part in the feeding cylinder, the feeding state and the containing state of the doping material can be switched, so that the doping material can be added into the silicon melt in multiple times, the distribution uniformity of the doping material in the silicon melt is improved, and the doping efficiency is improved.

The invention discloses a long afterglow luminescent material, the chemical formula of which is CaM x N y TiO 3 Pr, wherein M = one or more elements of Sr, Ba, Mg, Be, N = one or more elements of Yb, Er, Nd, Tm, Ho, 0≤x<0.4, 0≤y<0.4; the long afterglow luminescent material prepared by the present invention has excellent chemical stability and uniform crystal form, and the afterglow time is as long as 8.5h. In addition, the material has good water resistance and can be used in water-based paints, solving the problem of less red luminescent materials in water-based paints, and has low cost and can be mass-produced. The obtained product does not contain radioactive elements and will not cause harm to the environment and human body.

The application discloses a growth method of a high-carrier-concentration heavily doped gallium oxide epitaxial film, and mainly solves the problems of high cost, high defect density and low carrier concentration of a currently used heavily doped epitaxial film substrate. The implementation scheme is as follows: a sapphire substrate is selected and cleaned; the cleaned substrate is put into a reaction cavity of a MOCVD (Metal Organic Chemical Vapor Deposition) for pretreatment; two layers of buffer layers with different mechanisms are sequentially grown on the substrate by changing the temperature, pressure and ratio of reaction sources of the reaction chamber; a Ge heavily doped beta-Ga2O3 film with an epitaxial concentration of 10 19 cm ‑3 -10 20 cm ‑3 is epitaxially prepared on the second buffer layer by using a pulse MOCVD method with GeH4 as a dopant and a catalyst, and the epitaxial film is annealed, so that the preparation of the epitaxial film is completed. The defect density of the epitaxial film and the substrate use cost are reduced, and the carrier concentration is improved, so that the epitaxial film can be used for the preparation of power devices and switching devices.

This invention discloses a low-indium ceramic target, its preparation method, and its application. The low-indium ceramic target comprises the following components by mass percentage: indium oxide content of 50.2%–60.8%; zinc oxide content of 16.8%–25.3%; tin oxide content of 18.0%–28.3%; and metal oxide content of 0.10%–2.5%. The sum of the contents of all components is 100%. The metal oxide includes at least three of the following: praseodymium oxide, hafnium oxide, terbium oxide, dysprosium oxide, and cerium oxide. Increasing the density of the target and lowering the sintering temperature improves the mobility of the TCO thin film prepared from the low-indium ceramic target.

The invention relates to the technical field of photovoltaics, and discloses a passivation contact solar cell and a preparation method thereof. The preparation method comprises the following steps: providing a substrate layer with a first surface and a second surface which are opposite; forming an oxide layer on the first surface of the substrate layer; performing laser sintering treatment on the surface of the oxide layer; forming a first doping layer on the oxide layer after laser sintering treatment; forming a second doping layer on the second surface of the substrate layer; and forming a first electrode connected with the first doping layer on one side of the first surface of the substrate layer, and forming a second electrode connected with the second doping layer on one side of the second surface of the substrate layer. According to the invention, the laser sintering treatment is carried out on the oxide layer to realize accurate optimization of the surface of the oxide layer and improve the surface and interface characteristics, so that the surface recombination rate of the oxide layer and the substrate layer and the first doping layer is reduced, the service life of a carrier is prolonged, the photoelectric conversion efficiency and stability of the cell are improved, and the power generation efficiency is improved.

The invention relates to an S-doped g-C3N4 / Bi2MoO6Z type heterojunction photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of photocatalysis. The preparation method of the catalyst comprises the following steps: mixing and grinding melamine, ammonium bromide and thioacetamide, and then carrying out a thermal polycondensation reaction to synthesize S-doped g-C3N4; mixing the S-doped g-C3N4 with a molybdenum source and bismuth source solution to form a turbid liquid; and finally, carrying out solvothermal reaction on the turbid liquid to obtain the S-doped g-C3N4 / Bi2MoO6 photocatalyst. The preparation process is simple, the cost is low, the operation repeatability is high, and the prepared catalyst has a homogeneous structure and excellent visible light photocatalytic activity, can effectively degrade organic pollutants, and has a wide application prospect, especially in the fields of energy and environmental governance.

The invention belongs to the technical field of fuel cells, and provides an aperture-adjustable sulfur-nitrogen co-doped mesoporous carbon material for a fuel cell and a preparation method and application thereof.The preparation method comprises the steps that organic magnesium salt, a polyhydroxy compound capable of being fused and gelatinized at the temperature of 200-300 DEG C and a compound containing sulfur and nitrogen element compound-urea are used as raw materials; after dissolving and uniformly mixing, carrying out heating polymerization and microwave-assisted uniform dispersion; gradually converting the mixed solution into a uniform gel precursor along with the volatilization of the solvent; and grinding into powder, carrying out three-section gradient carbonization program heating carbonization treatment under the protection of inert atmosphere, and removing the template through acid pickling to obtain the target product. According to the present invention, the directional adjustment of the mesopore size and the pore size distribution is achieved, and by using the mesoporous structure as the fuel cell cathode catalyst carrier, the mass transfer path can be effectively optimized by using the high specific surface area and the adjustable mesoporous structure, and the oxygen reduction reaction activity, the polarization performance and the long-term stability can be significantly improved.

The invention discloses block fluoride fluorescent powder and a preparation method thereof, a mixture and a luminescent device, the space group of the block fluoride fluorescent powder is P3m1, the crystal grains of the block fluoride fluorescent powder are tetrakaidecahedron particles with the surface being # imgabs0 # and {0001} crystal plane families, the chemical structural formula of the block fluoride fluorescent powder is AxMaFz: yMn < 4 + >, A is at least one of K, Rb, Na, Li, Cs and NH4 < + >, and M is Ti or Ge or a combination of Ti or Ge and other limited elements; 1.8 < = x < = 2.2, 0.8 < = a < = 1.05, 0.0001 < = y < = 0.2, and 5.8 < = z < = 6.2. The block fluoride fluorescent powder provided by the invention solves the problems that the existing fluorescent powder has an obvious flaky preferential habit, is low in luminous intensity and limited in Mn < 4 + > doping amount, and is difficult to meet the market requirements of LED (Light Emitting Diode) devices.

The invention relates to the technical field of high-purity boron-doped silicon carbide powder and a solid-phase synthesis method thereof, and particularly discloses high-purity boron-doped silicon carbide powder and a solid-phase synthesis method thereof. The invention aims to solve the problems that the boron doping concentration is uncontrollable, the component distribution is uneven, the impurity content is high and the powder particle size does not meet the crystal growth requirement of a physical vapor transport method in the existing preparation of the p-type silicon carbide single crystal raw material. The method comprises the following steps: mixing high-purity carbon powder, silicon powder and a boron source in proportion; the preparation method comprises the following steps: firstly, generating silicon carbide crystal nucleuses at the constant temperature of 1350-1500 DEG C under the protection of inert gas filled after vacuum, and then promoting grain growth and uniform doping of boron at the constant temperature of 2100-2300 DEG C and 13.3-66.7 kPa; and cooling, crushing, screening, cleaning and drying to obtain target powder. By the adoption of the technical scheme, precise regulation and control of the boron doping concentration ranging from 0.01 at% to 5 at%, customized growth with the particle size ranging from 0.1 mm to 3 mm and high cleanliness with the purity higher than 99.999% can be achieved, the powder fluidity is good, and the requirements for growth of high-performance p-type silicon carbide single crystals and application of high-thermal-conductivity ceramic substrates are completely met.

The invention discloses a P-type heavy doping chemical potential regulation and control growth method of 4H-SiC. The method comprises the following steps: providing a SiC substrate; carrying out pretreatment on the SiC substrate; introducing a source gas so as to grow a P-type heavily doped 4H-SiC epitaxial layer on the surface of the pretreated SiC substrate; the source gas comprises C source gas, Si source gas and P-type doped source gas; in the growth process of the 4H-SiC epitaxial layer, the 4H-SiC epitaxial layer begins to grow from the C-rich atmosphere, and the SiC substrate is periodically in the C-rich atmosphere and the Si-rich atmosphere; the C-rich atmosphere is used for reducing the adsorption formation energy of P-type doped atoms and improving the adsorption strength of the 4H-SiC epitaxial layer on the surface of the SiC substrate; and the Si-rich atmosphere is used for enhancing the bonding ability between the adsorbed P-type doping atoms and SiC crystal molecules and increasing the growth speed of the 4H-SiC epitaxial layer. According to the invention, rapid and uniform growth of the epitaxial layer can be realized.

The utility model discloses a doping device for heavily doping a Czochralski single crystal, which comprises a doping bowl suitable for containing a dopant, a doping device for heavily doping a Czochralski single crystal, and a doping device for heavily doping a Czochralski single crystal, the doping cover comprises a doping cover body and a guide part, the doping cover body is bell-shaped, the axial direction of the doping cover body extends in the vertical direction, the doping bowl is coaxial with the doping cover body and is connected with the top of the inner wall of the doping cover body, and the guide part is connected to the bottom end of the doping cover body; the guide part is annular and extends outwards and downwards in the radial direction of the doping cover body, and the guide part and the silicon solution are arranged at an interval in the vertical direction. Therefore, the guide part is connected to the bottom of the doping cover body, so that on the premise of ensuring non-contact doping, the guide part can block and guide a part of escaping gas molecules, the doping area can be increased, the doping efficiency can be improved, and the one-time yield of single crystal growth can be improved.

This invention provides an alkali-activated synergistic nitrogen-phosphorus co-doped porous biomass hard carbon material, its preparation method, and its application. This invention only requires mixing pre-carbonized biomass material, an activator, and a dopant, followed by calcination under an inert atmosphere to obtain a porous hard carbon material. Then, the porous hard carbon material is calcined again under an inert atmosphere to obtain the alkali-activated synergistic nitrogen-phosphorus co-doped porous biomass hard carbon material. This simple and effective method achieves the stepped pore design and nitrogen-phosphorus doping of the hard carbon material, and the obtained nitrogen-phosphorus co-doped porous hard carbon material exhibits high specific capacity and initial coulombic efficiency.