200results about How to "Improve doping efficiency" patented technology

The invention discloses a nitride LED (light-emitting diode) structure. A P-type doped InGaN / GaN superlattice structure is inserted between a multiple quantum well active layer and an electronic barrier layer so as to improve the hole concentration and reduce the dosage concentration of the P-type hole injection layer; the superlattice structure has polarization effect, thus being capable of improving the doping efficiency and reducing the P-type impurity concentration; and impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved. The invention also discloses a preparation method of the nitride LED structure, through inserting the P-type doped InGaN / GaN superlattice structure between the multiple quantum well active layer and the electronic barrier layer, the hole concentration can be improved, and the dosage concentration of the P-type hole injection layer can be reduced; since the superlattice structure has polarization effect, the doping efficiency can be improved and the P-type impurity concentration can be reduced; and the impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved.

A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.

The invention which provides an oxygen reduction non-noble metal catalyst and a preparation method thereof belongs to the technical field of fuel cells. The nitrogen doped non-noble metal fuel cell catalyst having a graphite-like structure is formed by introducing nitrogen-containing monomers into layered inorganic compound interlayers and carrying out interlayer polymerization-pyrolysis. The active nitrogen loss is effectively reduced and the graphitization degree of the catalyst is effectively improved by utilizing an almost closed effect of the layered compound to improve the catalytic activity and the stability of the non-noble metal catalyst. The method of the invention has the advantages of simplicity and easy implement, and low production cost; and the catalyst prepared through the method has the advantages of good oxygen reduction catalytic activity and good stability, and can be applied to a fuel cell with a proton exchange membrane as an electrolyte. The fuel cell manufactured with the catalyst can be widely applied to electric automobiles, various spacecrafts, and portable electronic devices, such as cameras, notebook computers, electric toys and the like.

An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

The invention provides a preparation method for a nitrogen-doped carbon oxygen reduction catalyst with a hierarchical porous structure, belonging to the technical field of a fuel cell. The preparation method comprises the following steps of: firstly, preparing a eutectic molten salt having a three-dimensional macro-porous structure by a freeze drying method; secondly, using the eutectic molten salt as a template, doping a nitrogen-containing precursor, and leading the nitrogen-containing precursor to be oxidized and polymerized on the surface of the eutectic molten salt by a solid-phase polymerization method, wherein ammonium persulfate serves as an oxidizing agent, and a ferric salt serves as a promoter; and finally, carrying out high-temperature pyrolysis and removing the eutectic molten salt. With the adoption of the nitrogen-doped carbon oxygen reduction catalyst with the hierarchical porous structure, the nitrogen-containing precursor can be effectively prevented from pyrolysis loss, structural collapse and sintering during the high-temperature carbonation process, the catalyst yield and the nitrogen doping efficiency are improved, moreover, a large amount of micropores, mesoporous and macropores can be generated, and the mass transfer efficiency of oxygen and water is improved. The method is simple and practical, the production cost is low, and the prepared catalyst has excellent oxygen reduction catalytic activity and can substitute the traditional commercial Pt / C catalyst.

The invention discloses a preparation method of the p-GaN ohmic contact with a low resistance, relating to a p-GaN, and provides a preparation method of a low resistance p-GaN ohmic contact. The invention comprises the following steps: a (0001) oriented sapphire substrate is arranged in a reaction chamber and heated in an atmosphere of H2, and then is cooled, and a nitriding treatment is performed on the substrate; cooling the material and a GaN buffer layer grows on the material, then the material is heated to recrystallize the GaN buffer layer; a layer of GaN grows on the epitaxy of the material; the material is cooled to grows a GaN layer doping Mg; the material is cooled to grow five cycles of p-InGaN / p-AlGaN superlattice layer; a p-InGaN top layer grows on the five cycles of p-InGaN / p-AlGaN superlattice layer. The result shows that adopting the p-InGaN / p-AlGaN superlattice layer as a top layer can provide a lower specific contact resistance.

The invention discloses an activation method of magnesium-doped nitride-based materials and luminescent diode P type gallium nitride, which comprises using an ICP plasma to process magnesium-doped nitride-based materials or luminescent diode P type gallium nitride, wherein reaction atmosphere comprises gas which contains oxygen element and mixed gas which contains oxygen element gas, or mixed gas of above gas with nitrogen, helium or argon gas, wherein the density of the plasma is between 1011-3 and 1012cm-3, then, removing oxidizing substance generated through the above reaction, and doing 400-600 EDG C high-temperature annealing to the materials. The activation method gets high-cavity density of magnesium-doped GaN materials, and improves the activation efficiency of magnesium-doped p-GaN.

A process for preparing the electrically conductive transparent film of Ga doped zinc oxide used for photoelectronic devices includes such steps as providing ZnO film and doping Ga in the ZnO film by magnetically controlled bias RF sputter to prepare said ZnO:Ga film. The ceramic target for sputter is composed of ZnO and Ga2O3. The sputtering parameters are also disclosed.

The application discloses an LED epitaxial growth method. The LED epitaxial growth method comprises the following steps: processing a sapphire substrate; growing a low-temperature buffer layer; annealing the low-temperature buffer layer; growing a Si-undoped N-GaN layer; growing a first Si-doped N-GaN layer; growing a second Si-doped N-GaN layer; growing a luminous layer; growing a pAlGaN / pInMgN / pInGaN superlattice layer; growing a high-temperature Mg-doped P-GaN layer; finally cooling down to 650-680 DEG C, keeping the temperature for 20-30 min, closing down a heating system and an air supply system, and performing furnace cooling. According to the LED epitaxial growth method, the novel material (pAlGaN / pInMgN / pInGaN superlattice layer) serves as a novel electronic barrier layer, and the atomic activity of In is utilized to reduce the activation energy of Mg, so that the Mg activation efficiency, the Mg doping efficiency, the hole concentration and the hole injection efficiency are improved, and the light efficiency of an LED device is promoted.

The invention discloses an LED epitaxial growth method. The LED epitaxial growth method comprises the following steps in sequence: processing a substrate, growing a low-temperature GaN nucleating layer, growing a high-temperature GaN buffer layer, growing a non-doped u-GaN layer, growing an Si-doped n-GaN layer, growing a luminous layer, growing an i-AlGaN layer and p-InGaN layer alternated growth structure, growing a high-temperature p-type GaN layer, growing a p-type GaN contact layer and cooling. Through the scheme, a traditional LED epitaxial electron blocking layer is designed into a low-voltage high-temperature i-AlGaN layer and high-voltage low-temperature p-InGaN layer alternated layer growth structure, an electron blocking effect is reached, and the increase of hole injection level is also facilitated, so that the luminous efficiency of an LED is improved.

The invention discloses a glassy carbon electrode (GCE) modified by aniline-co-aminophenol copolymer carbon nanotube composite, a preparation method thereof and a method for removing perchlorat from water. The preparation method of the glassy carbon electrode comprises the following steps: dispersing carbon nanotubes in DMF; taking a proper amount of mixed liquor to drip onto the clean surface of the glassy carbon electrode, and air drying; carrying out electrolytic polymerization on a three-electrode system consisting of a glassy carbon working electrode modifying the carbon nanotube, a platinum counter electrode and a calomel reference electrode in the mixed liquor of hydrochloric acid, aniline and o-aminophenol through a constant bit method; thus, generating aniline-co-aminophenol copolymer carbon nanotube composite on the surface of the carbon nanotube modified glassy carbon electrode after a certain time. The modified electrode is washed by diluted hydrochloric acid and secondary water successively, forms the three-electrode system with the platinum counter electrode and the calomel reference electrode, and is doped in the water body containing perchlorat. The perchlorat is doped on the glassy carbon electrode modified by the aniline-co-aminophenol copolymer carbon nanotube composite, which can be seen clearly in an X-ray photoelectron spectroscopy.

The invention relates to an abrasion-resistant and corrosion-resistant molybdenum alloy and a preparation method thereof. The abrasion-resistant and corrosion-resistant molybdenum alloy comprises the following components by volume percent: 0.2% to 10% of ZrO2 and 0.05% to 1% of Y2O3, and the balance being molybdenum. According to the abrasion-resistant and corrosion-resistant molybdenum alloy provided by the invention, ZrO2 is adopted as dispersed phases and is added into the molybdenum alloy, Y2O3 is added to stabilize tetragonal phases ZrO2 in the molybdenum alloy, crystal transition of ZrO2 under the high temperature is prevented, and plasticity and toughness are guaranteed; and the components in the alloy are reasonable in proportion and cooperate to act, recrystallization temperature of the molybdenum alloy is increased, grain-boundary strength of the molybdenum alloy is improved while processing performance is improved, and high-temperature creep resistance, abrasion resistance and corrosion resistance of the molybdenum alloy are strengthened.

Disclosed herein is a method of synthesizing a conducting polymer using a polymer, having a substituent in a part thereof, as a dopant, in which a variety of polymers is substituted with a predetermined functional group to serve as a dopant such that the substituted functional group functions as the dopant of the conducting polymer, or a monomer having a substituent able to act as a dopant is copolymerized to prepare a polymer dopant having a substituent in a part thereof. The partially substituted polymer dopant used in this invention may serve as a dopant upon synthesis of the conducting polymer or upon additional doping of the synthesized polymer. Compared to a conventional monomer dopant, the polymer dopant does not emit low-molecular-weight material, and has higher solubility. Further, compared to a polymer dopant having a substituent such as a sulfonic acid group throughout, the synthesized conducting polymer can have superior mechanical properties and maximum conductivity amounting to 5×10″1 S / cm.

The invention discloses crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment. The crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment is prepared from crystalline silicon dioxide base bodies and gamma-Ce2S3 pigment particles wrapped with the base bodies; and the two or more gamma-Ce2S3 pigment particles are inlaid in each crystalline silicon dioxide base body. In addition, the invention further discloses a preparation method of the crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment and a prepared product. The wrapped gamma-Ce2S3 red pigment adopts crystalline silicon dioxide as a wrapping body, wrapping is complete, a wrapping layer is compact, and the wrapped gamma-Ce2S3 red pigment has excellent acid corrosion resisting and high-temperature oxidation resisting properties; and the wrapped gamma-Ce2S3 red pigment is prepared through an acid and alkaline stepped catalysis sol-gel method, the process is easy to operate, the wrapping efficiency is high, the wrappedgamma-Ce2S3 red pigment can well adapt to the development tendency of environmental friendliness and clean production, and industrial production of the crystalline silicon dioxide wrapped gamma-Ce2S3red pigment and development and popularization of the technology of the crystalline silicon dioxide wrapped gamma-Ce2S3 red pigment are facilitated.

The invention relates to an LED with a P type A1InGaN contact layer, and a preparation method thereof. The structure successively comprises a substrate, a nucleation layer, a buffer layer, an N type GaN layer, a multi-quantum well luminescent layer, and a P type structure from bottom to top; wherein the P type structure is successively composed of a P type A1GaN layer, a P type GaN layer and a P type A1InGaN contact layer. The In doping amount in the P type A1InGaN layer of an LED chip changes regularly, thereby changing the energy band distribution of the P type A1InGaN layer, weakening the blocking effect of the valance band of the P type A1InGaN layer in hole injection, and meanwhile not weakening the blocking effect to other electrons. The structure can improve surface coarsening to a certain degree; through the structure, the ohmic contact of the LED chip can be reduced by about 10%.

A process for laser processing an article which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

The invention discloses a method for substrate epitaxial growth of luminous diode based on AlN template, including processing substrate, growing AlxGa(1-x)N layer, AlyGa(1-y)N layer, SivAlzGa(1-z-v)N layer, N type GaN layer mixed with Si, Inx1Ga(1-x1)N / GaN luminous layer (wherein, x1=0.20-0.25), P type AlGaN layer and P type GaN layer mixed with Mg and cooling. The method enables the simplification of epitaxial growth and improves the production efficiency of LED.

The invention discloses a growing method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the steps that a substrate is provided, and a low-temperature buffering layer, a high-temperature buffering layer, an N-type layer, an active layer and an electronic barrier layer grow on the substrate in sequence; a P-type layer composed of an undoped intrinsic GaN layer, a doped GaN armoring layer and a concave doped GaN layer grows, the growing temperature of the concave doped GaN layer is higher than that of the intrinsic GaN layer, the growing temperature of the intrinsic GaN layer is higher than that of the GaN armoring layer, first concentration Mg is used in the GaN armoring layer to carry out doping, second concentration Mg is adopted in the concave doped GaN layer to carry out doping, third concentration Mg is utilized for carrying out doping, finally the first concentration Mg is adopted to carry out doping, the first concentration is larger than the second concentration, and the second concentration is larger than the third concentration; the P-type layer is activated. The hole concentration is increased through high-temperature growing of the concave doped GaN layer, the Mg doping efficiency can be guaranteed, and damage to the InGaN active layer cannot be increased.

The invention relates to a doping method and a doping device of pulling reincorporation antimony crystals. The doping device comprises a quartz cover and a small quartz crucible, the small quartz crucible containing dopant antimony is hung in the quartz cover, and the bottom of the small quartz crucible is provided with a small hole. By adopting the doping device, the dopant antimony is effectively doped to a silicon melt when silicon materials are melted, the splash of dopant antimony is effectively controlled in the quartz cover at the moment of flowing into melting silicon in the doping process, the damage to hearth atmosphere is avoided, and the problem that the dopant antimony is difficult to be doped into the silicon materials because of the splash caused by violent reaction is effectively solved. Because the doping time is short, the influence of evaporation of dopant is reduced. The reaction of the doping process is stable and controllable, the weight of the dopant can be accurately set, and the consistence of the dopant can be effectively controlled. The efficiency for doping the antimony is enhanced, the cost of the dopant is saved, and the crystallization rate of the reincorporation antimony crystals is enhanced at the same time, thereby meeting the needs of domestic and international markets for the reincorporation antimony crystals.

The invention provides an LED epitaxial structure which comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer, an Si-doped n-type GaN layer, an InxGa(1-x)N / GaN light emitting layer, an InX / Mg3N2 super-lattice inner roughed layer, a p-type AlGaN layer and a magnesium-doped p-type GaN layer, wherein the substrate, the low-temperature buffer layer, the non-doped GaN layer, the Si-doped n-type GaN layer, the InxGa(1-x)N / GaN light emitting layer, the InX / Mg3N2 super-lattice inner roughed layer, the p-type AlGaN layer and the magnesium-doped p-type GaN layer are successively laminated. The InX / Mg3N2 super-lattice inner roughed layer comprises 8-10 monomers which are arranged in an overlapped manner. Each monomer comprises an InN layer and a Mg3N2 layer. The LED epitaxial structure provided by the invention is advantageous in that the InX / Mg3N2 super-lattice inner roughed layer covers the light emitting layer; the InX / Mg3N2 material has an advantage of low mismatch with the GaN crystal lattice; high quality of the epitaxial layer crystal is realized; not only is light efficiency improved, but also antistatic capability can be improved; and LED product quality is improved. As an integral technical solution, the InX / Mg3N2 super-lattice inner roughed layer has advantages of increasing number of photons extracted from the LED in light unit time, reducing number of attenuation times of the photons in the LED, and correspondingly improving light extraction strength. The invention further discloses a growing method of the LED epitaxial structure. The growing method of the LED epitaxial structure has advantages of concise steps, easy process parameter control and convenient industrial production.

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein discrete fin parts are formed on a surface of the substrate, an isolation layer is also formed on the surface of the substrate and covers surfaces of a part of side walls of the fin parts, and the top of the isolation layer is lower than the tops of the fin parts; forming a gate structure bridging the fin parts on a surface of the isolation layer, wherein the gate structure covers the surfaces of a part of tops and the side walls of the fin parts; forming an amorphous material layer covering the surfaces of a part of tops and the side walls of the fin parts and the surface of the isolation layer; forming an oxide doping layer on a surface of the amorphous material layer; annealing the oxide doping layer so that doping ions are diffused and enter the fin parts, and forming doping regions in the fin parts at two sides of the gate structure; and removing the oxide doping layer. During the process of removing the oxide doping layer, the amorphous material layer has a protection effect on the isolation layer, the etching loss caused by the technology of removing the oxide doping layer on the isolation layer is prevented, so that the thickness of the isolation layer is maintained unchanged, and the electrical property of the formed fin field-effect transistor is further improved.

The invention provides a method for manufacturing zinc-oxide-based p-type materials, and belongs to the technical field of semiconductor material growing. The method includes the steps that a gradient layer is manufactured on a base layer; a covering layer is manufactured on the gradient layer; the base layer is made of MgxZn1-xO materials with the oxygen polarity surfaces, wherein the x is smaller than or equal to 0.6 and larger than or equal to 0.2, and the thickness of the base layer is larger than or equal to 5 nm; the gradient layer is of a component gradient structure, the component gradient structure comprises MgxZn1-xO / Mgx-deltaZn1-(x-delta)O / Mgx-2delta Zn1-(x-2delta)O / ... / Mgx-(n-1)deltaZn1-[x-(n-1)delta]O / Mgx-ndeltaZn1-(x-ndelta)O, wherein the delta->zero, the n is a natural number, the ndelta is equal to x, and the thickness of the gradient layer is smaller than or equal to 1 micrometer; the materials of the covering layer are ZnO, and the thickness of the covering layer is larger than or equal to 300 nm. The zinc-oxide-based p-type materials manufactured with the method have the good temperature stability.

Disclosed is a manufacturing method of a contact image sensor. The manufacturing method comprises the steps of providing a substrate; forming multiple trenches in the substrate; forming a doping layerat the bottoms and on the surfaces of the side walls of the trenches, wherein the doped ions in the doping layer are N type or P type ions; performing annealing treatment on the doping layer, enabling the doped ions in the doping layer to be diffused to the substrate at the bottoms and on the side walls of the trenches, and forming isolation doped wells which surround the trenches in the substrate; after the isolation doped wells are formed, forming isolation structures which are full of the trenches; and forming photodiodes in the substrate between adjacent isolation structures, wherein thephotodiodes are adjacent to the isolation doped wells. By virtue of the manufacturing method, damage of the substrate from lattice is lowered, thereby improving the performance of the manufactured contact image sensor.

The invention discloses a novel fully passivated contact crystalline silicon solar cell and a preparation method thereof. The novel fully passivated contact crystalline silicon solar cell comprises acrystalline silicon layer, an ultra-thin silicon oxide passivation layer is arranged on the two sides, a mixed phase silicon oxide / nanocrystalline silicon layer is arranged on the front surface, an intrinsic hydrogenated amorphous silicon layer and a p-type hydrogenated amorphous silicon layer are arranged on the reverse surafce, and an ITO layer and an Ag electrode are arranged outside the two sides. The mp-SiOx / nc-Si is applied to replace the poly-Si layer in the SiOx / poly-Si passivation contact structure of the TOPCon cell to act as the front passivation contact of the cell, and the intrinsic hydrogenated amorphous silicon (a-Si: H (i)) and the doped a-Si: H stack layer are used as the reverse passivation contact and the fully passivated contact crystalline silicon solar cell is designed and prepared so that the electrical and optical properties of the front surface of the passivated contact crystalline silicon solar cell can be enhanced.

The embodiment of the invention provides a thin film transistor, a fabrication method thereof, an array substrate and a display device in technical field of display, which can be used for improving ion injection efficiency of a source-drain and reducing the contact resistance between the source-drain and an active layer. The thin film transistor comprises a source, a drain, a gate, a gate insulation layer and an active layer, wherein the source, the drain and the gate are arranged on the substrate, and the active layer comprises poly-silicon, the source, the drain and the gate are arranged on the active layer, at least one through hole is formed in a contact region of the source and / or the drain and the active layer, and ions are doped into a region, corresponding to the through hole, of the active layer.

The invention discloses a metal particle-amorphous diamond composite anode for a fuel cell and a preparation method thereof. In the anode, a doped amorphous diamond film and metal nanoparticles are deposited on a substrate of the anode in sequence from bottom to top, wherein the doped amorphous diamond film contains carbon, hydrogen, oxygen and a current carrier doping agent; the current carrier doping agent is any one of boron, nitrogen or phosphorus; the metal nanoparticles are any one or any more than two alloys of platinum, ruthenium or palladium; and the composite anode comprises the following components in percentage by mass: 58.7 to 77.5 percent of carbon, 0 to 14.0 percent of hydrogen, 6.4 to 15.3 percent of oxygen, 1.7 to 8.5 percent of current carrier doping agent, and 3.2 to 13.4 percent of metal nanoparticles. The metal particle-amorphous diamond composite anode has simple preparation technology, can be used as an anode material of alcohol fuel cells, and has good catalytic capability.

The present disclosure provides a method for fabricating a fin field-effect transistor (fin-FET), including: providing a substrate having a plurality of discrete fin structures thereon; forming a chemical oxide layer on at least a sidewall of a fin structure; forming a doped layer containing doping ions on the chemical oxide layer; and annealing the doped layer such that the doping ions diffuse into the fin structure to form a doped region.

The invention discloses a light emitting diode and a preparation method of the light emitting diode. The method comprises following steps of providing a substrate; cleaning the surface of the substrate; successively growing a buffer layer and an N type semiconductor layer on the surface of the substrate; growing a quantum well layer on the surface of the N type semiconductor layer, wherein a step of growing a light emitting layer comprises growing a defect layer, a reparation layer and the light emitting layer; and growing a first P type semiconductor layer, an electron blocking layer and a second P type semiconductor layer on the quantum well layer. According to the light emitting diode and method provided by the invention, an In component is added on the premise of improving the quality of the quantum well; moreover, through adoption of the first P type layer structure of high pressure and low doping, the light emitting brightness of the light emitting diode is greatly improved.

A process for growing P-type ZnO crystal film by real-time doping of nitrogen includes washing substrate, putting it in reaction chamber of sputter equipment, vacuumizing heating, substrate to 200-600 deg.c, introducing the mixture of high-purity NH3 and O2, and sputter growing with high-purity Zn as target under 1-10 MPa.

A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.