4results about How to "Improve doping efficiency" patented technology

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

The application discloses a growth method of a high-carrier-concentration heavily doped gallium oxide epitaxial film, and mainly solves the problems of high cost, high defect density and low carrier concentration of a currently used heavily doped epitaxial film substrate. The implementation scheme is as follows: a sapphire substrate is selected and cleaned; the cleaned substrate is put into a reaction cavity of a MOCVD (Metal Organic Chemical Vapor Deposition) for pretreatment; two layers of buffer layers with different mechanisms are sequentially grown on the substrate by changing the temperature, pressure and ratio of reaction sources of the reaction chamber; a Ge heavily doped beta-Ga2O3 film with an epitaxial concentration of 10 19 cm ‑3 -10 20 cm ‑3 is epitaxially prepared on the second buffer layer by using a pulse MOCVD method with GeH4 as a dopant and a catalyst, and the epitaxial film is annealed, so that the preparation of the epitaxial film is completed. The defect density of the epitaxial film and the substrate use cost are reduced, and the carrier concentration is improved, so that the epitaxial film can be used for the preparation of power devices and switching devices.

This invention discloses a low-indium ceramic target, its preparation method, and its application. The low-indium ceramic target comprises the following components by mass percentage: indium oxide content of 50.2%–60.8%; zinc oxide content of 16.8%–25.3%; tin oxide content of 18.0%–28.3%; and metal oxide content of 0.10%–2.5%. The sum of the contents of all components is 100%. The metal oxide includes at least three of the following: praseodymium oxide, hafnium oxide, terbium oxide, dysprosium oxide, and cerium oxide. Increasing the density of the target and lowering the sintering temperature improves the mobility of the TCO thin film prepared from the low-indium ceramic target.

This invention provides an alkali-activated synergistic nitrogen-phosphorus co-doped porous biomass hard carbon material, its preparation method, and its application. This invention only requires mixing pre-carbonized biomass material, an activator, and a dopant, followed by calcination under an inert atmosphere to obtain a porous hard carbon material. Then, the porous hard carbon material is calcined again under an inert atmosphere to obtain the alkali-activated synergistic nitrogen-phosphorus co-doped porous biomass hard carbon material. This simple and effective method achieves the stepped pore design and nitrogen-phosphorus doping of the hard carbon material, and the obtained nitrogen-phosphorus co-doped porous hard carbon material exhibits high specific capacity and initial coulombic efficiency.