LED epitaxial structure with high light extraction efficiency and growing method thereof

Abstract

The invention provides an LED epitaxial structure which comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer, an Si-doped n-type GaN layer, an InxGa(1-x)N / GaN light emitting layer, an InX / Mg3N2 super-lattice inner roughed layer, a p-type AlGaN layer and a magnesium-doped p-type GaN layer, wherein the substrate, the low-temperature buffer layer, the non-doped GaN layer, the Si-doped n-type GaN layer, the InxGa(1-x)N / GaN light emitting layer, the InX / Mg3N2 super-lattice inner roughed layer, the p-type AlGaN layer and the magnesium-doped p-type GaN layer are successively laminated. The InX / Mg3N2 super-lattice inner roughed layer comprises 8-10 monomers which are arranged in an overlapped manner. Each monomer comprises an InN layer and a Mg3N2 layer. The LED epitaxial structure provided by the invention is advantageous in that the InX / Mg3N2 super-lattice inner roughed layer covers the light emitting layer; the InX / Mg3N2 material has an advantage of low mismatch with the GaN crystal lattice; high quality of the epitaxial layer crystal is realized; not only is light efficiency improved, but also antistatic capability can be improved; and LED product quality is improved. As an integral technical solution, the InX / Mg3N2 super-lattice inner roughed layer has advantages of increasing number of photons extracted from the LED in light unit time, reducing number of attenuation times of the photons in the LED, and correspondingly improving light extraction strength. The invention further discloses a growing method of the LED epitaxial structure. The growing method of the LED epitaxial structure has advantages of concise steps, easy process parameter control and convenient industrial production.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an LED epitaxial structure with high light extraction efficiency and a growth method thereof. Background technique [0002] At present, LED is a kind of solid-state lighting, which is recognized by consumers because of its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability. The driving voltage and light efficiency requirements of high-power devices are the focus of current market demand. [0003] In the prior art, the extraction of LED light generally means that photons propagate from the light-emitting layer to the surroundings of the LED at any angle, part of which is extracted from the upper and side parts of the LED, and part of which is reflected by the sapphire substrate and propagates to the surroundings again. The extraction process from the light-emitting layer to the outside; GaN on the...

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Problems solved by technology

This method can improve the light extraction efficiency to a certain extent, but it has the following defects: (1) because InN / Si y Ga (1-y) There is a large lattice mismatch between N material and GaN material, and the impact is that the dislocation density of GaN material is as high as 80 pieces / cm 2 ; (2) Because the dislocation density of GaN material is large and the crystal quality is poor, which provides a leakage channel, the antistatic ability of LED devices is relatively weak, especially under high voltage, the antistatic ability is sharply weakened

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