Method for improving performance of fin field-effect transistor

Abstract

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein discrete fin parts are formed on a surface of the substrate, an isolation layer is also formed on the surface of the substrate and covers surfaces of a part of side walls of the fin parts, and the top of the isolation layer is lower than the tops of the fin parts; forming a gate structure bridging the fin parts on a surface of the isolation layer, wherein the gate structure covers the surfaces of a part of tops and the side walls of the fin parts; forming an amorphous material layer covering the surfaces of a part of tops and the side walls of the fin parts and the surface of the isolation layer; forming an oxide doping layer on a surface of the amorphous material layer; annealing the oxide doping layer so that doping ions are diffused and enter the fin parts, and forming doping regions in the fin parts at two sides of the gate structure; and removing the oxide doping layer. During the process of removing the oxide doping layer, the amorphous material layer has a protection effect on the isolation layer, the etching loss caused by the technology of removing the oxide doping layer on the isolation layer is prevented, so that the thickness of the isolation layer is maintained unchanged, and the electrical property of the formed fin field-effect transistor is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so that the control ability of the gate to the channel becomes worse, resulting in the phenomenon of subthreshold leakage, namely So-called short-...

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Problems solved by technology

[0005] However, the electrical performance of the fin field effect transistor formed by the prior art needs to be improved

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