Method for improving performance of fin field-effect transistor

A fin field effect transistor and performance technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the electrical performance of fin field effect transistors needs to be improved, achieve weak diffusion barrier ability, and improve doping. Efficient and protective effect
CN106952806AInactive Publication Date: 2017-07-14SEMICON MFG INT (SHANGHAI) CORP +1
7 Cites 10 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2017-07-14
Estimated Expiration
Not applicable ยท inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein discrete fin parts are formed on a surface of the substrate, an isolation layer is also formed on the surface of the substrate and covers surfaces of a part of side walls of the fin parts, and the top of the isolation layer is lower than the tops of the fin parts; forming a gate structure bridging the fin parts on a surface of the isolation layer, wherein the gate structure covers the surfaces of a part of tops and the side walls of the fin parts; forming an amorphous material layer covering the surfaces of a part of tops and the side walls of the fin parts and the surface of the isolation layer; forming an oxide doping layer on a surface of the amorphous material layer; annealing the oxide doping layer so that doping ions are diffused and enter the fin parts, and forming doping regions in the fin parts at two sides of the gate structure; and removing the oxide doping layer. During the process of removing the oxide doping layer, the amorphous material layer has a protection effect on the isolation layer, the etching loss caused by the technology of removing the oxide doping layer on the isolation layer is prevented, so that the thickness of the isolation layer is maintained unchanged, and the electrical property of the formed fin field-effect transistor is further improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of a fin field effect transistor. Background technique

[0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube.

[0003] However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so that the control ability of the gate to the channel becomes worse, resulting in the phenomenon of subthreshold leakage, namely So-called short-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More