Method for manufacturing zinc-oxide-based p-type materials

A zinc oxide-based, p-type technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of poor stability and low repeatability, and achieve good temperature stability and high repeatability , the effect of increasing the ionization rate

Inactive Publication Date: 2014-08-06
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing zinc oxide-based p-type materials in order to solve the problems of poor stability and low repeatability of the existing preparation methods of zinc oxide-based p-type materials

Method used

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  • Method for manufacturing zinc-oxide-based p-type materials
  • Method for manufacturing zinc-oxide-based p-type materials

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preparation example Construction

[0023] The invention provides a method for preparing a zinc oxide-based p-type material, such as figure 1 As shown, the method includes:

[0024] Prepare a gradient layer 103 on the base layer 102;

[0025] Prepare a cover layer 104 on the gradient layer 103;

[0026] The base layer 102 is Mg on the oxygen polar surface x Zn 1-x O material, the thickness of the base layer is not less than 5nm, preferably 20-50nm, and it must have a complete structure to control the polarity of the subsequent structure;

[0027] The gradient layer 103 has a composition gradient structure, and the Mg composition of the gradient layer gradually decreases from x (0.6≥x≥0.2) in the base layer to 0 as the thickness changes, and its structure can be expressed as Mg from bottom to top x Zn 1-x O / Mg x-δ Zn 1-(x-δ) O / Mg x-2δ Zn 1-(x-2δ) O / … / Mg x-(n-1)δ Zn 1-[x-(n-1)δ] O / Mg x-nδ Zn 1-(x-nδ) O(ZnO) (δ→0, n is a natural number; nδ=x; abbreviated as graded-MgZnO), δ is a value close to 0 betwee...

Embodiment 1

[0035] The specific implementation method of preparing polarization-induced p-type ZnO material by MOCVD

[0036] Zinc source adopts diethyl zinc, magnesium source adopts dimethyl dimagnesocene, oxygen source adopts oxygen, zinc source and magnesium source are contained in bubble bottles, and the active ingredients in the bubble bottles are carried by carrier gas (nitrogen) It can be seen that the organic source pipeline of the MOCVD system in this embodiment is a standard pipeline, so the amount of the source passed into the reaction chamber is related to the temperature of the source and the flow rate of the carrier gas (the higher the temperature of the source, the greater the flow rate of the carrier gas, the greater the flow rate of the carrier gas through the greater the amount of source that enters the reaction chamber).

[0037] Step 1, substrate preparation: clean the C-plane sapphire substrate of oxygen polarity, and place it in the MOCVD reaction chamber (correspond...

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Abstract

The invention provides a method for manufacturing zinc-oxide-based p-type materials, and belongs to the technical field of semiconductor material growing. The method includes the steps that a gradient layer is manufactured on a base layer; a covering layer is manufactured on the gradient layer; the base layer is made of MgxZn1-xO materials with the oxygen polarity surfaces, wherein the x is smaller than or equal to 0.6 and larger than or equal to 0.2, and the thickness of the base layer is larger than or equal to 5 nm; the gradient layer is of a component gradient structure, the component gradient structure comprises MgxZn1-xO / Mgx-deltaZn1-(x-delta)O / Mgx-2delta Zn1-(x-2delta)O / ... / Mgx-(n-1)deltaZn1-[x-(n-1)delta]O / Mgx-ndeltaZn1-(x-ndelta)O, wherein the delta->zero, the n is a natural number, the ndelta is equal to x, and the thickness of the gradient layer is smaller than or equal to 1 micrometer; the materials of the covering layer are ZnO, and the thickness of the covering layer is larger than or equal to 300 nm. The zinc-oxide-based p-type materials manufactured with the method have the good temperature stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material growth, and in particular relates to a preparation method of a zinc oxide-based p-type material. Background technique [0002] Wide bandgap semiconductors are called third-generation semiconductors because of their broad application prospects in solid-state lighting, short-wavelength semiconductor lasers, and ultraviolet light detection. ZnO is one of the representatives of wide bandgap semiconductor materials. It is a uniaxially symmetric direct bandgap semiconductor. The warm ionization energy (26meV) can ensure efficient exciton luminescence and low-threshold stimulated emission at room temperature. Therefore, ZnO is considered to be an ideal material for short-wavelength light-emitting diodes (LEDs), especially lasers (LDs) and other optoelectronic devices. Compared with other wide bandgap semiconductor materials, ZnO also has abundant resources and low cost of raw materials; ...

Claims

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Application Information

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IPC IPC(8): H01L31/0296H01L31/18
CPCH01L31/0296H01L31/1828Y02P70/50
Inventor 王双鹏单崇新李炳辉张振中李科学申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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