Method for substrate epitaxial growth of luminous diode based on AlN template

A light-emitting diode and epitaxial growth technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low wavelength hit rate, poor antistatic ability, and low brightness of epitaxial wafers, so as to improve production efficiency and simplify epitaxial growth Effect

Active Publication Date: 2017-01-11
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
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Problems solved by technology

[0018] In view of this, the present invention provides a method for epitaxial growth of a light-emitting diode substrate based on an AlN template, which solves the

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  • Method for substrate epitaxial growth of luminous diode based on AlN template
  • Method for substrate epitaxial growth of luminous diode based on AlN template
  • Method for substrate epitaxial growth of luminous diode based on AlN template

Examples

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Example Embodiment

[0064] Example 1

[0065] Such as image 3 As shown, this embodiment is a schematic flow chart of the method for epitaxial growth of a light-emitting diode substrate based on an AlN template. The method described in this embodiment solves the problem that the method for preparing LEDs in the prior art makes the prepared epitaxial wafer wavelength hit rate Low, light epitaxial wafer crystal quality, poor crystal quality of the light-emitting layer, the doping efficiency of the P layer is reduced, and the mobility of holes is reduced; resulting in a decrease in brightness, light efficiency, reverse voltage, and antistatic ability of the prepared LED Poor issues.

[0066] In this embodiment, MOCVD (metal organic compound chemical vapor deposition) is used to grow high-brightness GaN-based LED epitaxial wafers, and high-purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, metal organic source trimethylgallium (...

Example Embodiment

[0081] Example 2

[0082] Such as Figure 3-5 As shown, Figure 5 This embodiment is a schematic flow chart of the method for epitaxial growth of a light-emitting diode substrate based on the AlN template. On the basis of Embodiment 1, the specific content of the entire growth of the light-emitting diode epitaxial layer based on the AlN template is described. The method for epitaxial growth of a light-emitting diode substrate based on an AlN template in this embodiment includes the following steps:

[0083] Step 501, processing the sapphire substrate: into the reaction chamber of the metal organic chemical vapor deposition system on which the substrate is placed, at the same time pass NH with a flow rate of 10000-20000sccm 3 , 100-130L / min H 2 , Raising the temperature to 900-1000° C., and processing the substrate for 300 s-600 s under the condition that the pressure of the reaction chamber is 100-200 mbar.

[0084] Step 502, grow Al x Ga (1-x) N layer, further:

[0085] Keep the pre...

Example Embodiment

[0099] Example 3

[0100] In this embodiment, LED sample 1 is prepared according to the traditional LED growth method, and sample 2 is prepared according to the LED growth method of the present invention; the epitaxial growth method parameters of sample 1 and sample 2 are shown in Table 1. Put sample 1 and sample 2 into XRD measurement equipment (X-ray Diffraction, also called X-ray diffractometer) at the same time to measure the value of GaN layer and the value of luminescence layer, see Table 3 for details. Then sample 1 and sample 2 were plated with an ITO layer of about 150nm thickness under the same pre-process conditions; a Cr / Pt / Au electrode of about 1500nm was plated under the same conditions; and a layer of about 100nm thick was plated under the same conditions Protective layer SiO 2 Then, under the same conditions, the sample is ground and cut into 635μm*635μm (25mil*25mil) chip particles, and then 100 chips are selected from each of sample 1 and sample 2 at the same po...

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Abstract

The invention discloses a method for substrate epitaxial growth of luminous diode based on AlN template, including processing substrate, growing AlxGa(1-x)N layer, AlyGa(1-y)N layer, SivAlzGa(1-z-v)N layer, N type GaN layer mixed with Si, Inx1Ga(1-x1)N/GaN luminous layer (wherein, x1=0.20-0.25), P type AlGaN layer and P type GaN layer mixed with Mg and cooling. The method enables the simplification of epitaxial growth and improves the production efficiency of LED.

Description

technical field [0001] The present invention relates to the technical field of epitaxial growth of a light emitting diode substrate, and more specifically relates to a method for epitaxial growth of a light emitting diode substrate based on an AlN template. Background technique [0002] Light Emitting Diode (LED for short) is a kind of semiconductor diode and a device that can convert electrical energy into light energy. LED products have the advantages of energy saving, environmental protection, long life and so on, and are widely loved by people. At present, the LED market is pursuing high-brightness LED products. The traditional LED structure mainly includes: substrate substrate, low-temperature buffer layer GaN, GaN layer not doped with Si, GaN layer doped with Si, light-emitting layer, doped Mg, GaN layer of Al, GaN doped with Mg at high temperature, indium tin oxide (IndiumTinOxide, ITO for short) layer, SiO 2 protective layer, P electrode and N electrode. [0003] ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0066H01L33/0075H01L33/32
Inventor 张宇
Owner XIANGNENG HUALEI OPTOELECTRONICS
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