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Method for Epitaxial Growth of Light Emitting Diode Substrate Based on Aln Template

A light-emitting diode and epitaxial growth technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low wavelength hit rate, high voltage, and poor light efficiency of epitaxial wafers, and achieve simplification of epitaxial growth and improvement of production efficiency. Effect

Active Publication Date: 2018-09-18
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0018] In view of this, the present invention provides a method for epitaxial growth of a light-emitting diode substrate based on an AlN template, which solves the problems of low wavelength hit rate, poor light efficiency, low brightness, high voltage, and reverse Technical problems of low voltage and poor antistatic ability

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  • Method for Epitaxial Growth of Light Emitting Diode Substrate Based on Aln Template
  • Method for Epitaxial Growth of Light Emitting Diode Substrate Based on Aln Template
  • Method for Epitaxial Growth of Light Emitting Diode Substrate Based on Aln Template

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Embodiment 1

[0065] Such as image 3 As shown, it is a schematic flow chart of the method for epitaxial growth of light-emitting diode substrates based on AlN templates described in this embodiment. The method described in this embodiment solves the problem of the method for preparing LEDs in the prior art so that the wavelength hit rate of the prepared epitaxial wafers Low, epitaxial wafer crystal quality is light, the crystal quality of the light-emitting layer is poor, the doping efficiency of the P layer is reduced, and the mobility of the holes is reduced; resulting in a decrease in brightness, a decrease in luminous efficacy, a decrease in reverse voltage, and an antistatic ability of the prepared LED Bad question.

[0066] In this embodiment, MOCVD (metal organic compound chemical vapor deposition) is used to grow high-brightness GaN-based LED epitaxial wafers, using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-...

Embodiment 2

[0082] Such as Figure 3-5 as shown, Figure 5 It is a schematic flowchart of the method for epitaxial growth of a light-emitting diode substrate based on an AlN template described in this embodiment. On the basis of Example 1, the specific content of the overall growth of an epitaxial layer of a light-emitting diode based on an AlN template is described. The method for the epitaxial growth of a light-emitting diode substrate based on an AlN template described in this embodiment includes the following steps:

[0083] Step 501, processing the sapphire substrate: Into the reaction chamber of the metal-organic chemical vapor deposition system with the substrate placed, NH with a flow rate of 10000-20000 sccm is introduced at the same time 3 , 100-130L / min H 2 , increasing the temperature to 900-1000° C., and processing the substrate for 300s-600s under the condition that the reaction chamber pressure is 100-200mbar.

[0084] Step 502, growing Al x Ga (1-x) N layers, further:...

Embodiment 3

[0100] In this embodiment, LED sample 1 was prepared according to the traditional LED growth method, and sample 2 was prepared according to the LED growth method of the present invention; parameters of the epitaxial growth methods of sample 1 and sample 2 are shown in Table 1. Put sample 1 and sample 2 into XRD measuring equipment (X-ray Diffraction, also known as X-ray diffractometer) at the same time to measure the value of GaN layer and the value of luminescence layer, see Table 3 for details. Then sample 1 and sample 2 are plated with about 150nm thick ITO layer under the same pre-process conditions; about 1500nm of Cr / Pt / Au electrodes are plated under the same conditions; The protective layer of SiO 2 , and then grind and cut the sample into chip particles of 635μm*635μm (25mil*25mil) under the same conditions, then select 100 grains from sample 1 and sample 2 at the same position, and package them into White LEDs. The photoelectric properties of sample 1 and sample 2 w...

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Abstract

The invention discloses a method for substrate epitaxial growth of luminous diode based on AlN template, including processing substrate, growing AlxGa(1-x)N layer, AlyGa(1-y)N layer, SivAlzGa(1-z-v)N layer, N type GaN layer mixed with Si, Inx1Ga(1-x1)N / GaN luminous layer (wherein, x1=0.20-0.25), P type AlGaN layer and P type GaN layer mixed with Mg and cooling. The method enables the simplification of epitaxial growth and improves the production efficiency of LED.

Description

technical field [0001] The present invention relates to the technical field of epitaxial growth of a light emitting diode substrate, and more specifically relates to a method for epitaxial growth of a light emitting diode substrate based on an AlN template. Background technique [0002] Light Emitting Diode (LED for short) is a kind of semiconductor diode and a device that can convert electrical energy into light energy. LED products have the advantages of energy saving, environmental protection, long life and so on, and are widely loved by people. At present, the LED market is pursuing high-brightness LED products. The traditional LED structure mainly includes: substrate substrate, low-temperature buffer layer GaN, GaN layer not doped with Si, GaN layer doped with Si, light-emitting layer, doped Mg, GaN layer of Al, GaN doped with Mg at high temperature, indium tin oxide (IndiumTinOxide, ITO for short) layer, SiO 2 protective layer, P electrode and N electrode. [0003] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0066H01L33/0075H01L33/32
Inventor 张宇
Owner XIANGNENG HUALEI OPTOELECTRONICS
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