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Preparation method of gallium adulterated zinc oxide transparent conductive film

A technology of transparent conductive film and transparent conductive film, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve problems such as unfavorable film growth and poor heat bearing capacity, save precious metal indium, adhere to Good performance and wide application range

Inactive Publication Date: 2006-01-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the poor thermal tolerance of organic material substrates, ZnO:Ga films need to be prepared by sputtering at lower substrate temperatures, but too low a preparation temperature is not conducive to film growth

Method used

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  • Preparation method of gallium adulterated zinc oxide transparent conductive film
  • Preparation method of gallium adulterated zinc oxide transparent conductive film
  • Preparation method of gallium adulterated zinc oxide transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1: Preparation of gallium-doped zinc oxide transparent conductive film material by biased radio frequency magnetron sputtering technology.

[0032] The composition of the ceramic target for sputtering is: 1 part of ZnO, Ga 2 O 3 0.03 parts are all mole parts. ZnO and Ga 2 O 3 After the powder raw materials are ball milled for 2 hours and mixed uniformly, they are rolled into a billet with a hydraulic press at a pressure of 60Mpa, and then sintered at 1200°C for 2 hours, then charged to 800°C, and cooled naturally after turning off the power.

[0033] Polypropylene ethylene glycol (PPA) film is used as the substrate material, the diameter of the target is 6.5 cm, and the distance from the target to the substrate is 5 cm. The ZnO:Ga transparent conductive film prepared under the conditions of argon partial pressure 2Pa, sputtering power 150W, bias voltage 0V, and substrate temperature at room temperature is a polycrystalline film, the growth rate of the film is 19nm / m...

Embodiment 2

[0035] The ZnO:Ga transparent conductive film material was prepared by the biased radio frequency magnetron sputtering technology, and the composition of the ceramic target for sputtering was the same as that of Example 1. Polypropylene ethylene glycol (PPA) film is used as the substrate material. The ZnO:Ga transparent conductive film is a polycrystalline film prepared under the conditions of argon partial pressure 1Pa, sputtering power 150W, bias voltage -75V, and substrate temperature at room temperature. The growth rate of the film is 21nm / min, and the resistivity of the film is 4.6×10 -4 Ωcm, sheet resistance 6.2Ω / □, and the average relative transmittance in the visible light range exceeds 83%.

Embodiment 3

[0037] The composition of the ceramic target for sputtering is 1 part of ZnO, Ga 2 O 3 , 0.05 parts, all molar parts, the ceramic target preparation method is

[0038] Example 1 is the same.

[0039] The substrate material is a polyethylene terephthalate film, and the film preparation conditions are the same as in Example 2. The obtained ZnO:Ga transparent conductive film has a polycrystalline structure, and the resistivity of the film is 5.1×10 -4Ωcm, the average relative transmittance in the visible light range exceeds 81%.

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Abstract

A process for preparing the electrically conductive transparent film of Ga doped zinc oxide used for photoelectronic devices includes such steps as providing ZnO film and doping Ga in the ZnO film by magnetically controlled bias RF sputter to prepare said ZnO:Ga film. The ceramic target for sputter is composed of ZnO and Ga2O3. The sputtering parameters are also disclosed.

Description

(1) Technical field [0001] The invention relates to a method for preparing a gallium-doped oxide transparent conductive film material, and belongs to the technical field of optoelectronic information functional materials. (2) Background technology [0002] Oxide transparent conductive film is an important optoelectronic information material. This thin film material not only has a high transmittance in the visible light region, but also has a high reflectivity in the infrared region, and its conductivity is close to the value of metal. Transparent conductive films are mainly used for: transparent electrodes for thin-film solar cells, flat panel displays and light-emitting devices, infrared heat-reflective films, touch-sensitive coatings, and window heaters for airplanes. [0003] The current commonly used transparent conductive films and the existing problems are as follows: [0004] (1) Tin-doped indium oxide (ITO) film is currently the most widely used transparent conductive fil...

Claims

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Application Information

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IPC IPC(8): C23C14/06
Inventor 马瑾
Owner SHANDONG UNIV
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