Preparation method of semiconductor film composite structural member

A composite structure, semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of easily damaged circuit structure, complicated circuit connection operation, affecting device performance, etc., to achieve easy control, ensure excellent performance, The effect of broad market prospects

Active Publication Date: 2021-07-30
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In addition to the detection unit made of semiconductor thin film, the semiconductor ultraviolet detector also needs to connect the circuit readout unit. The traditional preparation method is to first set the pixel point The semiconductor thin film is grown on the substrate of the array structure, and then the readout circuit is connected; however, the operation of the circuit connection in this preparation method is relatively complicated, the technical thresh

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  • Preparation method of semiconductor film composite structural member
  • Preparation method of semiconductor film composite structural member
  • Preparation method of semiconductor film composite structural member

Examples

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Example Embodiment

[0028] The present invention provides a method of preparing a semiconductor thin film composite structure, comprising the steps of:

[0029] a) Set a pixel dot array structure and a readout circuit on the surface of the substrate, the pixel dot array structure being composed of a plurality of pixel units;

[0030] b) Place the substrate provided with the pixel dot matrix structure and the readout circuit in a wide apparatus for a wide apparatus; use mask to block the reading circuit, and perform a wide-proof with oxide under 20 to 450 ° C. The growth of the membrane layer obtains a semiconductor film composite structural member.

[0031] In the preparation method provided by the present invention, a pixel dot array structure and a readout circuit are first set on the surface of the substrate. Wherein, the substrate includes, but is not limited to, a sapphire substrate; the pixel dot array structure consists of a plurality of pixel units, each of which is composed of a pair of elec...

Example Embodiment

[0038] Example 1

[0039] Preparation of semiconductor thin film - substrate composite structural parts, the specific steps are as follows:

[0040] 1) A 3 × 3 pixel dot structure and a readout circuit are made on the sapphire substrate; wherein each pixel unit in the pixel dot array structure consists of two separate electrode units, the electrode unit consisting of gold. It consists, for the fork finger structure, the finger is 0.5mm, the pointing and finger spacing is 10 μm, and the fork refers to the logarithm of 50 pairs; the readout circuit is connected to each of the pixel units, respectively (the read There are two contacts, each contact corresponding to an electrode unit in the pixel unit), and the material used is a gold portion having a diameter of 25 μm;

[0041] 2) Place the surface of the surface of the pixel dot matrix structure and the readout circuit in the MOCVD growth apparatus, block the reading circuit with the mask, and only expose the area of ​​the pixel dot...

Example Embodiment

[0047] Example 2

[0048] Referring to the preparation step of Example 1, the difference is only that GA 2 O 3 The film growth mode is replaced by MOCVD to magnetron sputtering. The specific magnetron sputter condition is: the sputtering radical power is 100 W, the sputtering pressure is 1 × 10 -1 PA, the sputtering time is 2 h; the substrate material grown by the film layer will gradually be sealed to room temperature, and the temperature elimination is preferably naturally cooled.

[0049] The photoelectric characteristics of the semiconductor thin film-substrate composite structural member prepared by the present embodiment are tested by the readout circuit on the substrate, and the specific method is shown in Example 1, and the results showed that the photocurrent was 15 μA, 90 ~ 10% response time was 480 ms.

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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a semiconductor film composite structural member, which comprises the following steps: a) arranging a pixel lattice structure and a reading circuit on the surface of a substrate, wherein the pixel lattice structure is composed of a plurality of pixel units; b) placing the substrate provided with the pixel lattice structure and the readout circuit in a wide bandgap oxide film growth device; and blocking the reading circuit by using a mask, and growing a wide bandgap oxide film layer at 20-450 DEG C to obtain the semiconductor film composite structural member. According to the preparation method provided by the invention, the wide bandgap oxide semiconductor film layer is directly grown and constructed on the substrate provided with the pixel lattice structure and the reading circuit at low temperature, and the preparation method has the characteristics of being simple in preparation and easy to control; the semiconductor ultraviolet detector with excellent performance can be obtained after the film layer growing between the two adjacent pixel units of the prepared composite structural member is etched subsequently, and the semiconductor ultraviolet detector has a very wide market prospect.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a semiconductor film composite structure. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and has outstanding advantages in weak signal detection. [0003] At present, the ultraviolet detectors that have been put into commercial use mainly include silicon-based...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L31/18H01L31/032
CPCH01L27/14692H01L31/18H01L31/032Y02P70/50
Inventor 刘可为陈星申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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