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Preparation method of semiconductor film composite structural member

A composite structure, semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of easily damaged circuit structure, complicated circuit connection operation, affecting device performance, etc., to achieve easy control, ensure excellent performance, The effect of broad market prospects

Active Publication Date: 2021-07-30
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition to the detection unit made of semiconductor thin film, the semiconductor ultraviolet detector also needs to connect the circuit readout unit. The traditional preparation method is to first set the pixel point The semiconductor thin film is grown on the substrate of the array structure, and then the readout circuit is connected; however, the operation of the circuit connection in this preparation method is relatively complicated, the technical threshold is high, and it is not easy to control
However, if it is considered to set up the pixel lattice structure and the readout circuit on the substrate first, and then grow the semiconductor thin film; although this can reduce the difficulty of preparation, the circuit structure is easily damaged under high temperature growth conditions, and the growth under low temperature growth conditions The problem of many film defects seriously affects the performance of the device

Method used

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  • Preparation method of semiconductor film composite structural member
  • Preparation method of semiconductor film composite structural member
  • Preparation method of semiconductor film composite structural member

Examples

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preparation example Construction

[0028] The invention provides a method for preparing a semiconductor thin film composite structure, comprising the following steps:

[0029] a) setting a pixel lattice structure and a readout circuit on the surface of the substrate, the pixel lattice structure is composed of a plurality of pixel units;

[0030] b) Place the substrate provided with the pixel lattice structure and the readout circuit in the wide-bandgap oxide film growth equipment; block the readout circuit with a mask, and carry out the wide-bandgap oxide film under the condition of 20-450°C The film layer is grown to obtain a semiconductor thin film composite structure.

[0031] In the preparation method provided by the present invention, firstly, a pixel lattice structure and a readout circuit are arranged on the surface of the substrate. Wherein, the substrate includes but is not limited to a sapphire substrate; the pixel lattice structure is composed of a plurality of pixel units, each of which is composed...

Embodiment 1

[0039] Prepare the semiconductor film-substrate composite structure, the specific steps are as follows:

[0040] 1) Make a 3×3 pixel lattice structure and a readout circuit on a sapphire substrate; wherein, each pixel unit in the pixel lattice structure is composed of two independent electrode units, and the electrode units are made of gold Composed of an interdigitated structure, the length of the interdigitated fingers is 0.5 mm, the finger width and interdigital spacing are 10 μm, and the number of interdigitated pairs is 50 pairs; the readout circuit is connected to each of the pixel units respectively (the readout circuit There are two contacts in the output circuit, and each contact is correspondingly connected to an electrode unit in the pixel unit), and the material used for the connection is a gold wire with a diameter of 25 μm;

[0041] 2) Put the substrate material with the pixel lattice structure and readout circuit on the surface into the MOCVD growth equipment, b...

Embodiment 2

[0048] Referring to the preparation steps of Example 1, the only difference is that the Ga 2 o 3 The growth method of the film was replaced by magnetron sputtering by MOCVD. The specific magnetron sputtering conditions were: the sputtering RF power was 100W, and the sputtering pressure was 1×10 -1 Pa, the sputtering time is 2h; the substrate material that will complete the growth of the film layer is gradually cooled to room temperature, and the cooling method is preferably natural cooling.

[0049] The optoelectronic properties of the semiconductor thin film-substrate composite structure prepared in this example were tested by the readout circuit on the substrate. The specific method refers to Example 1. The results show that the photocurrent is 15 μA and the 90-10% response time is 480 ms.

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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a semiconductor film composite structural member, which comprises the following steps: a) arranging a pixel lattice structure and a reading circuit on the surface of a substrate, wherein the pixel lattice structure is composed of a plurality of pixel units; b) placing the substrate provided with the pixel lattice structure and the readout circuit in a wide bandgap oxide film growth device; and blocking the reading circuit by using a mask, and growing a wide bandgap oxide film layer at 20-450 DEG C to obtain the semiconductor film composite structural member. According to the preparation method provided by the invention, the wide bandgap oxide semiconductor film layer is directly grown and constructed on the substrate provided with the pixel lattice structure and the reading circuit at low temperature, and the preparation method has the characteristics of being simple in preparation and easy to control; the semiconductor ultraviolet detector with excellent performance can be obtained after the film layer growing between the two adjacent pixel units of the prepared composite structural member is etched subsequently, and the semiconductor ultraviolet detector has a very wide market prospect.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a semiconductor film composite structure. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and has outstanding advantages in weak signal detection. [0003] At present, the ultraviolet detectors that have been put into commercial use mainly include silicon-based...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L31/18H01L31/032
CPCH01L27/14692H01L31/18H01L31/032Y02P70/50
Inventor 刘可为陈星申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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