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CZTS film surface secondary phase etching method

A copper-zinc-tin-sulfur, secondary phase technology, applied in photovoltaic power generation, sustainable manufacturing/processing, electrical components, etc., can solve problems such as deliquescence, neurasthenia syndrome, eye and upper respiratory tract irritation, and human injury. Achieve good photoelectric performance

Active Publication Date: 2017-08-22
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because KCN is a highly toxic drug, long-term exposure to cyanide will cause neurasthenia syndrome, eye and upper respiratory tract irritation, and cause great harm to the human body. Moreover, it is easy to deliquescence and reacts with water to form HCN, which is also a highly toxic drug. drug

Method used

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  • CZTS film surface secondary phase etching method
  • CZTS film surface secondary phase etching method
  • CZTS film surface secondary phase etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0029] In the present embodiment, the method for etching the secondary phase on the surface of the copper-zinc-tin-sulfur film comprises the following steps:

[0030] a. Mix concentrated hydrochloric acid with a mass fraction of 37.5% and deionized water at a volume ratio of 1% to prepare a hydrochloric acid solution.

[0031] b. Place the sulfided copper-zinc-tin-sulfur thin film to be etched in the hydrochloric acid solution prepared in step a, and ensure that the hydrochloric acid solution is excessive.

[0032] c. Put the solution in step b in a constant temperature water bath, and set the temperature of the water bath to 75°C.

[0033] d. Hydrochloric acid reacts with the ZnS secondary impurity phase on the surface of the copper-zinc-tin-sulfur film, and the reaction equation is:

[0034]

[0035] ZnCl produced by the reaction 2 Soluble in water, thus successfully removing the ZnS secondary impurity phase on the surface of the CZTS film.

[0036] e. After reacting h...

Embodiment 2

[0039] Compared with Example 1, in the present embodiment, in step a, the concentrated hydrochloric acid and deionized water with a mass fraction of 37.5% are mixed in a ratio of 3% by volume to make a hydrochloric acid solution; other steps in this embodiment are all Same as Example 1.

Embodiment 3

[0041] Compared with Example 1, in this example, in step a, concentrated hydrochloric acid with a mass fraction of 37.5% and deionized water are mixed at a ratio of 0% by volume to make a hydrochloric acid solution, that is, hydrochloric acid in this example The solution is a hydrochloric acid solution with a mass fraction of 0%, that is, the hydrochloric acid solution is all deionized water; other steps in this embodiment are the same as in Example 1. To be precise, this embodiment is actually an example of not using hydrochloric acid to etch the CuZnSnS thin film.

[0042] Carry out Raman scattering test to the CZTS thin film after being etched among the embodiment 1 ~ embodiment 3, adopt the laser device of 325nm during the test, the obtained result is shown in figure 1 and figure 2 , figure 2 yes figure 1 Enlarged view indicated by dashed box. Depend on figure 1 and figure 2 It can be seen that with the increase of hydrochloric acid concentration, the peak intensi...

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Abstract

The invention provides a CZTS film surface secondary phase etching method. According to the method, concentrated hydrochloric acid (the mass fraction is 37.5%) is utilized to be mixed with deionized water according to the preset volume ratio to dilute the concentrated hydrochloric acid, the diluted hydrochloric acid solution is arranged in a constant temperature water bath kettle, a film sample to be etched is arranged in the diluted hydrochloric acid solution and the film sample is enabled to react with the hydrochloric acid for a period of time and then the sample is taken out, and finally the film surface is rinsed to be clean by the deionized water and then blown and dried by a nitrogen gun so that the relatively single pure phase CZTS film can be obtained. The CZTS film is immersed in the hydrochloric acid solution so that the surface ZnS secondary phase of the CZTS film can be effectively removed, and then the CZTS solar cell of great photoelectric performance can be subsequently prepared. Compared with the conventional KCN etching method, the method is simple and easy to operate, low in cost and less in harm to the human beings.

Description

technical field [0001] The invention relates to the technical field of thin film etching, in particular to a method for etching a secondary phase on the surface of a copper-zinc-tin-sulfur thin film. Background technique [0002] Currently, CuZnSnS (Cu 2 ZnSnS (abbreviation: CZTS) material replaces indium and gallium in copper indium gallium selenide (CIGS) with relatively cheap and abundant zinc and tin elements, which greatly reduces costs and is more suitable for large-scale applications. CZTS has a bandgap matching the solar spectrum (1.5 eV) and over 10 4 cm -1 The absorption coefficient is high, and the theoretical photoelectric conversion efficiency exceeds 30%, which is a good absorbing layer material. However, since CZTS is a multi-component compound, it is difficult to control the stoichiometry. If the stoichiometric ratio is not well controlled, it is easy to generate a binary heterophase, such as: Cu 2 S, ZnS, etc. are not conducive to the photoelectric perf...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0326Y02E10/50Y02P70/50
Inventor 范建东麦耀华陈荣荣刘冲
Owner HEBEI UNIVERSITY
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