Method of producing p-GaN low-resistance Ohm contact

An ohmic contact, p-gan technology, applied in the field of p-type gallium nitride, can solve problems such as large resistance, and achieve the effect of reducing contact resistance and improving device performance

Inactive Publication Date: 2008-05-21
EPITOP PHOTOELECTRIC TECH
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing a p-GaN low-resistance ohmic contact to solve the problem of high resistance of the existing p-GaN ohmic contact

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of producing p-GaN low-resistance Ohm contact
  • Method of producing p-GaN low-resistance Ohm contact
  • Method of producing p-GaN low-resistance Ohm contact

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] (1) Thomas Swan LP-MOCVD equipment is used for epitaxial wafer growth, and three growth schemes are given for sample C below.

[0036] 1) The first growth plan

[0037] (a) Load the (0001) orientation no-clean sapphire substrate into the reaction chamber, and 2 Heat to 1080°C and bake for 10 minutes under the atmosphere, and the pressure of the reaction chamber is 500Torr;

[0038] (b) A GaN buffer layer with a thickness of 25nm was grown at 550°C, the growth pressure was 500Torr, the flow rate of TMGa was 40μmol / min, NH 3 The flow rate is 110μmol / min;

[0039] (c) A 2μm GaN layer was grown at 1060°C, the growth pressure was 200Torr, the TMGa flow rate was 50μmol / min, NH 3 The flow rate is 110μmol / min;

[0040] (d) A magnesium-doped GaN layer is grown on the GaN layer at a growth temperature of 800°C, a growth thickness of 500nm, a growth pressure of 200Torr, a TMGa flow rate of 50μmol / min, and NH 3 The flow rate is 110μmol / min; Cp 2 Mg is 140nmol / min;

[0041] (...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of the p-GaN ohmic contact with a low resistance, relating to a p-GaN, and provides a preparation method of a low resistance p-GaN ohmic contact. The invention comprises the following steps: a (0001) oriented sapphire substrate is arranged in a reaction chamber and heated in an atmosphere of H2, and then is cooled, and a nitriding treatment is performed on the substrate; cooling the material and a GaN buffer layer grows on the material, then the material is heated to recrystallize the GaN buffer layer; a layer of GaN grows on the epitaxy of the material; the material is cooled to grows a GaN layer doping Mg; the material is cooled to grow five cycles of p-InGaN / p-AlGaN superlattice layer; a p-InGaN top layer grows on the five cycles of p-InGaN / p-AlGaN superlattice layer. The result shows that adopting the p-InGaN / p-AlGaN superlattice layer as a top layer can provide a lower specific contact resistance.

Description

technical field [0001] The invention relates to a p-type gallium nitride (p-GaN), in particular to a preparation method of a p-GaN low-resistance ohmic contact using a p-AlGaN / p-InGaN superlattice as a top layer. Background technique [0002] In recent years, GaN-based wide-well-band semiconductor material has attracted much attention due to its wide application prospects in short-wavelength light-emitting devices, photodetection devices, and radiation-resistant, high-frequency and high-power devices, and has developed rapidly. These devices all involve P-type ohmic contacts, but good P-type ohmic contacts have always been one of the main factors restricting their further development. The low-resistance P-type ohmic contact of GaN-based materials is mainly restricted by the following two aspects: the lack of suitable contact metal materials, the work function of p-GaN materials is very large (7.5eV), and the metal Pt with the largest work function is only 5.65 eV; it is dif...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04H01L21/20H01L21/205H01L33/00H01L31/18
CPCY02P70/50
Inventor 刘宝林张保平尹以安
Owner EPITOP PHOTOELECTRIC TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap