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LED epitaxial growth method

An epitaxial growth, N-type technology, used in electrical components, circuits, semiconductor devices, etc., can solve the problems of low hole transport and injection efficiency, low Mg activation efficiency, low hole mobility, etc. Improve activation efficiency and light effect

Active Publication Date: 2015-12-30
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The demand for LED brightness and luminous efficacy in the market is increasing day by day. The existing LED epitaxial electron blocking layer pAlGaN has many shortcomings. The activation energy of Mg in AlGaN material is very high, the activation efficiency of Mg is very low, and the hole concentration is low. The mobility of AlGaN material with high energy band is very low, and the efficiency of hole transport and injection is low

Method used

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Embodiment 1

[0048] combine figure 1 with figure 2 , this embodiment provides a LED epitaxial growth method, specifically as follows:

[0049] Step 101, processing the sapphire substrate 201: in a hydrogen atmosphere at 1000°C, inject 100 L / min of H2, keep the reaction chamber pressure at 100 mbar, and process the sapphire substrate 201 for 8 minutes;

[0050] Step 102, grow low-temperature buffer layer 202: lower the temperature to 500°C, keep the reaction chamber pressure at 300mbar, feed NH3 at a flow rate of 10000sccm, TMGa at 50sccm, and H2 at 100L / min, and grow a 20nm-thick sapphire substrate 201 Low temperature buffer layer 202;

[0051] Step 103, annealing the low-temperature buffer layer 202: raise the temperature to 1000°C, keep the pressure in the reaction chamber at 300mbar, feed in NH3 at a flow rate of 30000sccm, H2 at 100L / min, and keep the temperature stable at 300°C to corrode the low-temperature buffer layer 202 into irregular islands;

[0052] Step 104, grow the N-t...

Embodiment 2

[0064] This embodiment provides an LED epitaxial growth method, specifically as follows:

[0065] Step 201, processing the sapphire substrate 201: in a hydrogen atmosphere at 1100°C, inject 130 L / min of H2, keep the reaction chamber pressure at 300 mbar, and process the sapphire substrate 201 for 10 minutes;

[0066] Step 202, grow low-temperature buffer layer 202: lower the temperature to 600°C, keep the reaction chamber pressure at 600mbar, feed NH3 at a flow rate of 20,000sccm, TMGa at 100sccm, and H2 at 130L / min, and grow a sapphire substrate 201 with a thickness of 40nm Low temperature buffer layer 202;

[0067] Step 203, annealing the low-temperature buffer layer 202: raise the temperature to 1100°C, keep the reaction chamber pressure at 600mbar, feed in NH3 at a flow rate of 40,000sccm, and H2 at 130L / min, and keep the temperature stable at 500°C to corrode the low-temperature buffer layer 202 into irregular islands;

[0068] Step 204, grow the N-type GaN layer 203 no...

Embodiment 3

[0080] Step 301, processing the sapphire substrate 201: in a hydrogen atmosphere at 1050°C, inject 115 L / min of H2, keep the reaction chamber pressure at 200 mbar, and process the sapphire substrate 201 for 9 minutes;

[0081] Step 302, grow the low-temperature buffer layer 202: lower the temperature to 550°C, keep the reaction chamber pressure at 450mbar, feed NH3 at a flow rate of 15000sccm, TMGa at 75sccm, and H2 at 115L / min, and grow a 30nm-thick sapphire substrate 201 Low temperature buffer layer 202;

[0082] Step 303, annealing the low-temperature buffer layer 202: raise the temperature to 1050°C, keep the pressure of the reaction chamber at 450mbar, feed in NH3 at a flow rate of 35000sccm, and H2 at 115L / min, and keep the temperature stable at 400°C to corrode the low-temperature buffer layer 202 into irregular islands;

[0083] Step 304, grow the N-type GaN layer 203 not doped with Si: raise the temperature to 1100°C, keep the reaction chamber pressure at 450mbar, fe...

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Abstract

The application discloses an LED epitaxial growth method. The LED epitaxial growth method comprises the following steps: processing a sapphire substrate; growing a low-temperature buffer layer; annealing the low-temperature buffer layer; growing a Si-undoped N-GaN layer; growing a first Si-doped N-GaN layer; growing a second Si-doped N-GaN layer; growing a luminous layer; growing a pAlGaN / pInMgN / pInGaN superlattice layer; growing a high-temperature Mg-doped P-GaN layer; finally cooling down to 650-680 DEG C, keeping the temperature for 20-30 min, closing down a heating system and an air supply system, and performing furnace cooling. According to the LED epitaxial growth method, the novel material (pAlGaN / pInMgN / pInGaN superlattice layer) serves as a novel electronic barrier layer, and the atomic activity of In is utilized to reduce the activation energy of Mg, so that the Mg activation efficiency, the Mg doping efficiency, the hole concentration and the hole injection efficiency are improved, and the light efficiency of an LED device is promoted.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an epitaxial growth method for improving the light efficiency of LEDs. Background technique [0002] At present, LED is a kind of solid-state lighting. The advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of domestic LED production is also gradually expanding. [0003] The demand for LED brightness and luminous efficacy in the market is increasing day by day. The existing LED epitaxial electron blocking layer pAlGaN has many shortcomings. The activation energy of Mg in AlGaN material is very high, the activation efficiency of Mg is very low, and the hole concentration is low. The mobility of AlGaN material with high energy band is very low, and the transport and injection efficiency of holes is low. Contents of the invention [0004] The technical ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/04H01L33/14
CPCH01L33/0066H01L33/0075H01L33/04H01L33/145
Inventor 徐平苗振林卢国军
Owner XIANGNENG HUALEI OPTOELECTRONICS
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