300 results about "Diamond substrate" patented technology

The invention belongs to the technical field of metamaterials, and particularly relates to a diamond substrate lattice metamaterial and an additive manufacturing method thereof. The structure is designed based on the geometric configuration of a diamond lattice, and has excellent high specific absorption mechanical properties. The design process comprises the following steps: firstly, carrying out spatial registration positioning on the basis of a unit cell structure with a preset wall thickness t and a unit cell width a; then, through a multi-unit-cell splicing design, the unit cells are spliced repeatedly for 12 times to form three-dimensional periodic stacking; then, the stacked structure is cut along the six datum planes; then cross plates are inserted into the six cutting faces respectively to enhance the integrity and strength of the structure; and finally, a complete DM plate lattice metamaterial structure is formed. The structure is provided with a plate-plate cross supporting framework, a complex three-dimensional inner cavity and highly symmetrical space distribution, the energy absorption capacity under unit mass is greatly improved, the mechanical properties are basically consistent in multiple directions, and the structure is suitable for the engineering fields of impact protection, energy absorption buffering and the like.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

Spiral inductors, magnetic field sensors incorporating the spiral inductors, and methods of using the magnetic field sensors are provided. The spiral inductors include an electrically conductive spiral coil and a nitrogen vacancy (NV) diamond substrate. A thin barrier layer of a dielectric material separates the spiral coil from the surface of the NV diamond substrate and an overlayer of dielectric material is disposed over the spiral nanocoil. The integration of the spiral coil with an NV substrate in this manner creates a highly enhanced magnetic transduction and produces a simple, high-performance way to control and read out electromagnetic signals. Because the spiral inductors enable electromagnetic-to-optical signal conversion, they can be used as sensors for environmental or biomedical applications and spin-based computation.

The present invention discloses a liquid-cooled radiator structure based on a diamond microchannel, which includes a diamond substrate and a diamond epitaxial layer stacked. A plurality of diamond microchannels with a certain interval are arranged in the diamond substrate, and the diamond epitaxial layer is used to bond the object to be cooled on its surface. The present invention also discloses a manufacturing method of the radiator, which solves the problem that traditional heat sinks cannot be applied in extreme environments such as high temperature, high radiation, and strong corrosion.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The invention provides a high-performance nitrogen vacancy color center diamond material under yttrium oxide protection and a preparation method and application thereof, and belongs to the technical field of quantum materials. The preparation method comprises the following steps: firstly carrying out electron irradiation and cleaning on a diamond substrate, then processing by adopting nitrogen plasma, then depositing an yttrium oxide coating, and annealing the diamond substrate deposited with the yttrium oxide coating under a vacuum condition to obtain the high-performance nitrogen vacancy color center diamond material. According to the method, the diamond is treated through the nitrogen plasma, so that the displacement nitrogen concentration in the diamond can be increased, and the NV-color center concentration can be increased in the subsequent annealing treatment process; meanwhile, the yttrium oxide coating is deposited on the diamond substrate, so that defects on the surface of the diamond can be reduced, the NV-color center concentration is increased, and the prepared diamond material has excellent corrosion resistance. The diamond material prepared by the preparation method can be used for preparing quantum sensors used under extreme conditions.

The invention discloses a single crystal diamond, a preparation method thereof and a chip, and relates to the technical field of semiconductors, and the preparation method of the single crystal diamond comprises the following steps: cutting a splicing side surface of a first diamond substrate and a splicing side surface of a second diamond substrate, the splicing side face of the first diamond substrate and the splicing side face of the second diamond substrate are both in a sawtooth shape. And splicing the sawtooth-shaped splicing side surface of the first diamond substrate with the sawtooth-shaped splicing side surface of the second diamond substrate to form the diamond substrate. An epitaxial layer is formed on the diamond substrate. The invention aims to realize seamless splicing of single crystal diamonds on splicing side surfaces of a crystal face (110). The single crystal diamond can be used as a substrate of a semiconductor device.

The invention belongs to the field of quantum sensors, and discloses a diamond spin quantum sensor and a preparation method thereof. The preparation method comprises the following steps: cleaning and polishing a monocrystal diamond substrate; a microwave plasma chemical vapor deposition method is adopted for preparing a diamond film with the nitrogen-vacancy color center density larger than 10 < 16 > cm <-3 > on the single crystal diamond substrate; and preparing an anti-ferromagnetic NiO film on the diamond film by adopting a radio frequency magnetron sputtering method to obtain the diamond spin quantum sensor. The diamond spin quantum sensor disclosed by the invention contains a high-concentration nitrogen-vacancy color center diamond film, and nitrogen-vacancy color center measurement has extremely high spatial resolution, so that the change of a nano-scale magnetic field can be detected; the diamond spin quantum sensor is applied to precise measurement of the magnetic moment of an antiferromagnetic film and the magnetic coupling effect of an antiferromagnetic / ferromagnetic heterojunction interface. And the preparation method is simple, economical and applicable, and provides possibility for application of the diamond nitrogen-vacancy color center material in the field of quantum magnetic sensors.

The invention discloses a high-gain diamond logic phase inverter and a preparation method thereof, and aims to solve the problem that the voltage gain of an existing logic phase inverter is relatively small. According to the high-gain diamond logic inverter, a diamond substrate is subjected to hydrotreating through hydrogen plasma to form the diamond substrate with a hydrogen terminal, a conducting channel is formed after the surface of the hydrogen terminal is in contact with air, and a first source electrode, a first drain electrode, a second source electrode and a second drain electrode are arranged on the diamond substrate. A first ferroelectric medium layer and a second ferroelectric medium layer are deposited on a diamond substrate, a first grid electrode is arranged on the first ferroelectric medium layer, and a second grid electrode is arranged on the second ferroelectric medium layer. According to the invention, an electron beam evaporation process is adopted to form an orthorhombic phase on a ferroelectric material deposited at a low temperature, the ferroelectric material has convertible ferroelectric characteristics, and ultra-steep sub-threshold swing is realized; the surface conductivity can be regulated and controlled by treating the surface of the hydrogen terminal diamond through the oxygen plasma, current matching is achieved, and the logic inverter works in a deep subthreshold region.

The invention provides a Fenton reagent, a polishing solution, a polishing method of a diamond substrate and a polished diamond wafer. The invention provides a Fenton reagent. The Fenton reagent comprises a hydrogen peroxide solution and a composition containing ferrite, the ferrite-containing composition comprises ferrite, a host molecule and a guest molecule, the host molecule is provided with a hydrophobic cavity for accommodating the guest molecule; the guest molecule has a conjugated pi bond that coordinates with Fe. The Fenton reagent and abrasive particles are adopted as a polishing solution, diamond is polished under irradiation of visible light, stability of the concentration of Fe < 2 + > in the polishing solution can be guaranteed, stable supply of hydroxyl radicals is achieved, and the high-quality diamond surface can be obtained.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

The invention discloses a diamond diode capable of selecting growth and regulating doping concentration and a preparation method thereof. The preparation method comprises the following steps: growing a (100) crystal orientation lightly doped diamond layer on a (100) crystal orientation intrinsic diamond substrate; etching the upper surface of the lightly doped diamond layer to form a groove, wherein the depth of the groove is smaller than the thickness of the lightly doped diamond layer; carrying out selective growth in the groove to form a heavily doped diamond layer with (111) crystal orientation; hydrogen terminals on the upper surface of the lightly doped diamond layer and the upper surface of the heavily doped diamond layer are removed; growing an ohmic electrode on the upper surface of the heavily doped diamond layer; and a Schottky electrode grows on the upper surface of the lightly doped diamond layer, and the ohmic electrode and the Schottky electrode are arranged at an interval. According to the invention, the carrier concentration difference between the drift region and the ohmic contact region of the device can be increased to 4-5 orders of magnitude, the reverse breakdown voltage and the breakdown field strength of the Schottky diode are improved, and the leakage current is reduced.

The invention discloses a self-aligned anode ultra-wide bandgap semiconductor diode rectifying device on a diamond high-thermal-conductivity substrate and a preparation method thereof, the device comprises a gallium oxide epitaxial wafer on the diamond substrate, one end of the upper part of the gallium oxide epitaxial wafer is provided with an ion implantation region, and a cathode electrode is prepared above the ion implantation region; an anode electrode is prepared at the other end above the gallium oxide epitaxial wafer on the diamond substrate, the ohmic contact resistance of the cathode electrode and the gallium oxide epitaxial wafer on the diamond substrate is reduced by the ion implantation region, and the anode electrode and the gallium oxide epitaxial wafer on the diamond substrate form Schottky contact; the preparation method comprises the following steps: preprocessing a gallium oxide epitaxial wafer on a diamond substrate; ion implantation; preparing a cathode electrode and an anode electrode; and performing self-aligned anode etching and in-situ annealing to finally form the gallium oxide self-aligned anode diode on the diamond. According to the invention, the breakdown voltage of the device is improved while the preparation process steps of the device are simplified.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

The invention provides a machining device for plasma double-sided polishing of diamond and a polishing machining method. The machining device comprises a plasma generator, a sealing cover and two polishing discs which can rotate mutually. The polishing disc is used as a polishing tool and also serves as a dielectric barrier layer of the plasma generator, the plasma generator is arranged in a closed cover, plasma containing active free radicals is generated between the upper polishing disc and the lower polishing disc, and the plasma containing the active free radicals can modify the diamond substrate, the upper polishing disc and the lower polishing disc. And finally, the diamond substrate is polished by the upper polishing disc and the lower polishing disc through rotation. The plasma auxiliary processing mode is effectively improved, and a vacuum chamber is not needed. According to the method, a surface damage layer left by grinding and rough polishing can be effectively eliminated, the polishing efficiency of the substrate can be effectively guaranteed, and meanwhile it can be guaranteed that the surface of the whole substrate reaches high surface quality.

The invention provides a diamond substrate screening method, which can be applied to the technical field of single crystal diamond material preparation, and comprises the following steps: carrying out crystal quality screening on diamond substrates, and selecting substrates meeting preset crystal quality to obtain a first screened substrate; performing stress state screening on the first screening substrate, and selecting a substrate meeting a preset stress state to obtain a second screening substrate; performing optical quality screening on the second screening substrate, and selecting a substrate meeting the preset optical quality to obtain a third screening substrate; performing surface quality screening on the third screening substrate, and selecting the substrate meeting the preset surface quality to obtain a fourth screening substrate; and crystal face deviation angle screening is conducted on the fourth screening substrate, the substrate meeting the preset crystal face deviation angle is selected, the target diamond substrate is obtained, and screening is completed. The epitaxial crystal quality of the CVD monocrystal diamond is improved by comprehensively evaluating substrate attributes such as crystal quality, stress state, defect distribution and surface quality.

A method for preparing an interconnection line of a diamond device belongs to the field of processing and preparation of ultra-wide bandgap semiconductor electronic devices. It is characterized in that: designing a circuit layout and cleaning a diamond substrate (110); then performing a photolithography process to prepare device units (120) and an interconnection region (130); plating a metal catalyst (131) on the interconnection region of the diamond surface; and in-situ growing a conductive carbon nanomaterial (132) on the diamond surface as the interconnection line. The present invention obtains a low-resistance and stable ohmic contact interconnection line on the diamond substrate, effectively avoiding the limitation of device failure caused by the breakage of the interconnection line formed by an ultra-thin metal film at present; the carbon nanomaterial interconnection line can work normally under high-temperature and high-pressure conditions and can meet the requirements of the future working environment of diamond devices. The obtained interconnection line has a low contact resistance with the diamond substrate, strong bonding force, and can withstand high-temperature and high-pressure working environments, laying a good foundation for the back-end process of future diamond-based integrated circuit preparation.

The present application relates to a kind of hydrogen terminal diamond / gallium oxide hetero lateral diode and preparation method, lateral diode includes: diamond substrate layer, n type Ga2O3 layer, hydrogen terminal diamond surface layer, cathode and anode, wherein, the n type Ga2O3 layer is located on one side of the diamond substrate layer, the hydrogen terminal diamond surface layer is located on the other side of the diamond substrate layer, the cathode is located on the n type Ga2O3 layer, the anode is located on the hydrogen terminal diamond surface layer.This lateral diode is combined together by the method of hetero integration p type electrically conductive diamond and n type electrically conductive Ga2O3, preparation ultra-wide bandgap semiconductor hetero integrated quasi-vertical diode device, effectively solve the problem that diamond is difficult to realize n type doping, gallium oxide is difficult to realize p type doping, improve the breakdown voltage of diode, realize ultra-wide bandgap semiconductor complementary conduction device.

The invention discloses a preparation method of a large-size diamond-based gallium nitride wafer, and belongs to the technical field of semiconductor materials. The method comprises the steps that gallium nitride wafers are separately placed in grooves of a diamond deposition tray for diamond deposition, the diamond nucleation process on the surface of gallium nitride is creatively designed, it is guaranteed that diamond crystal nuclei stably and orderly grow on the surface of the gallium nitride wafers, and a foundation is laid for subsequent stable and orderly deposition of a diamond substrate. According to the method, the problems of wafer warping, wafer fragmentation, diamond and gallium nitride stripping and the like caused by mismatching of thermal expansion coefficients of diamond and gallium nitride are solved, the thermal mismatching rate is reduced, and the bonding stability and the interface thermal conductivity between the gallium nitride wafer and the diamond substrate are improved.

The present application relates to a diamond substrate, a diamond load and a preparation method thereof. The preparation method of the diamond substrate comprises: providing a diamond sheet having a first surface and a second surface opposite to each other; using a laser cutting method to open a through groove on the diamond sheet to obtain a grooved substrate, wherein a first at least partial area of ​​the surface of the grooved substrate is covered with carbon attachments; placing the grooved substrate in a hydrogen plasma device to expose a second at least partial area of ​​the grooved substrate to hydrogen plasma gas, wherein the second at least partial area completely overlaps or partially overlaps with the first at least partial area; providing hydrogen plasma gas to the grooved substrate to cause the hydrogen plasma gas to etch the second at least partial area to remove the carbon attachments in the second at least partial area to obtain a diamond substrate; the present application has a simple process, is efficient and quick, and can effectively improve the adhesion of the film layer on the side of the diamond through groove and improve the stability of the back-end product.

The invention relates to an embedded micro-fluidic active heat dissipation structure based on a diamond substrate and a preparation method, and belongs to the technical field of heat dissipation. The embedded micro-fluidic active heat dissipation structure based on the diamond substrate comprises the diamond substrate and a cover plate combined on one side of the diamond substrate; a micro-fluid channel system is formed from the surface of one side, close to the cover plate, of the diamond substrate to the interior of the diamond substrate, and the micro-fluid channel system comprises an inlet manifold, a plurality of groups of jet hole arrays, a plurality of micro-channels and an outlet manifold; a fluid disturbance structure is arranged in each micro-channel in the fluid flowing direction. According to the embedded micro-fluidic active heat dissipation structure disclosed by the invention, a micro-fluidic channel system with a specific shape is constructed in the diamond substrate, and jet reinforcement, disturbance enhancement and manifold shunting design are combined, so that the ultrahigh heat dissipation capability under low energy consumption is realized, the problem that the heat dissipation efficiency of an existing silicon-based micro-channel is limited is effectively solved, and the heat dissipation efficiency of the silicon-based micro-channel is improved. And an efficient, stable and integratable thermal management scheme is provided for a high-power electronic device.

An irradiation-resistant diamond Schottky diode and its fabrication method are disclosed. The purpose of this invention is to solve the problem of poor radiation resistance stability in Schottky diodes. In this irradiation-resistant diamond Schottky diode, p-type diodes are epitaxially grown on an intrinsic diamond substrate. + Diamond epitaxial layer, in p + An ohmic electrode is deposited in a portion of the upper surface of the diamond epitaxial layer, at p + p-type epitaxial growth is performed on the region of the diamond epitaxial layer where no ohmic electrode is deposited. ‑ Type II diamond drift layer, in p ‑ Easily oxidizable metal electrodes are deposited on a diamond drift layer, serving as Schottky electrodes. These electrodes are then terminated with oxygen. ‑ A metal oxide layer is formed between the drift layers of the diamond. This invention utilizes a low work function, easily oxidizable metal as a Schottky electrode. The low work function, easily oxidizable metal passivates the oxygen terminals on the diamond surface. The oxide layer formed on the diamond surface makes the oxygen terminals less susceptible to radiation-induced reconstruction, resulting in stronger radiation resistance.

The utility model provides a substrate table for microwave plasma chemical vapor deposition, which is characterized in that the upper surface of an upper substrate is provided with a plurality of placing grooves, the bottom surface of the upper substrate opposite to the placing grooves is provided with a transfer groove, and vent holes are arranged between the side walls of the placing grooves and the transfer groove; the upper substrate is embedded in the lower substrate, and the transfer groove and the lower substrate form a transfer cavity; the lower substrate is provided with air inlet holes communicated with the transfer cavities. By arranging the air temperature control mechanism which directly sprays air to the bottom of the placing groove, the growth temperature of the diamond is effectively reduced, and after the middle rotating cavity is filled with gas, the temperature of the four side faces of the diamond substrate is controlled. According to the substrate table, cooling water circulation and air cooling are combined, and the gas flow at different positions of the substrate table can be controlled through control of a valve, so that precise temperature control is carried out on single crystal diamond seed crystals at each position, the growth temperature of each seed crystal is kept consistent, the whole growth process is higher in temperature, and the crystal quality is higher.

The application provides a preparation method of a diamond CMOS inverter and the inverter, and relates to the technical field of super-wide band gap semiconductor field effect transistor devices. The method comprises the following steps: introducing boron elements and nitrogen elements into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source, so as to grow an n-type diamond epitaxy on a diamond substrate layer; treating the diamond substrate after depositing a metal mask by using hydrogen plasma, so as to prepare a p-type active region on a second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS field effect tube gate dielectric layer, a PMOS field effect tube gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. In this way, the hydrogen-terminated diamond preparation process and the diamond boron-nitrogen co-doping process are used to simultaneously form the p-type active region and the n-type active region on a single monocrystalline diamond surface, so that the preparation of the CMOS inverter on the single diamond is realized.

The polishing device comprises a base, a two-dimensional driving mechanism is installed above the base through a support and drives a vertical electric cylinder to move forwards, backwards, leftwards and rightwards, a pressure sensor is installed at the lower end of a telescopic shaft of the vertical electric cylinder, and the two-dimensional driving mechanism drives the vertical electric cylinder to move forwards, backwards, leftwards and rightwards. A mounting plate is mounted at the bottom of the pressure sensor, and a detachable composite buffering polishing head is mounted at the bottom of the mounting plate. Mixed liquid nozzles are mounted on the left side and the right side of the composite buffer polishing head; according to the polishing device for manufacturing the ultrathin single crystal diamond substrate, chemical and mechanical cooperative polishing and flexible buffering compensation are achieved, a rectangular hole of the mounting frame allows the polishing head to move slightly, local stress concentration is eliminated, polishing uniformity is improved, the green manufacturing characteristic is achieved, modular maintenance is achieved, the detachable composite buffering polishing head and a bolt are designed to be replaced quickly, and maintenance is convenient.

The invention provides a graphite-diamond composite attenuation material, a preparation method thereof and a terahertz traveling wave tube. The method for preparing the graphite-diamond composite attenuation material comprises the steps that laser is focused in a diamond base material, laser treatment is conducted on a target position in the diamond base material, a patterned modified area is obtained, and a plurality of graphite spots are distributed in the patterned modified area; carrying out high-temperature heat treatment on the diamond base material subjected to laser treatment; according to the graphite-diamond composite attenuation material, diamond serves as a medium phase, and graphite serves as an attenuation phase. According to the invention, the femtosecond laser performs accurate energy impact on the patterned graphite phase position in the diamond base material as the medium phase, and high-temperature heat treatment is assisted, so that the microwave attenuation performance of the graphite-diamond composite attenuation material can be improved.

This invention provides a self-splicing large-size single-crystal diamond substrate and its manufacturing method, belonging to the field of single-crystal diamond technology. The method includes the following steps: in-situ printing a light-treated resin barrier layer on the non-splicing surface of the single-crystal diamond; mechanically grinding the splicing surface of the single-crystal diamond; immersing the splicing surface of the single-crystal diamond in a magnetic nanoparticle precursor dispersion; aligning the splicing surfaces of the single-crystal diamonds to be spliced ​​with each other, applying an external magnetic field in a specific direction to align and tightly adhere the splicing surfaces; subjecting the spliced ​​diamond to high-temperature annealing in a reducing atmosphere or vacuum environment; and placing the spliced ​​diamond in a strong acid cleaning solution to dissolve and remove residual metals and impurities from the diamond surface. This invention utilizes small-size single-crystal diamonds with excellent surface quality for splicing to obtain large-size single-crystal diamonds, preserving the thermal and mechanical properties of single-crystal diamonds while achieving wafer-level large-size expansion.

The application discloses a method for obtaining a graphitized in-situ antenna by ablation of a diamond surface and application thereof, and aims at solving problems of a current microwave antenna, such as great interference from external factors and poor system integration. The method for obtaining the graphitized in-situ antenna comprises the following steps: firstly, cleaning a diamond substrate; secondly, spin-coating a photoresist on the surface of the cleaned diamond substrate, performing photoetching according to an antenna pattern, and then immersing the photoresist in a developing solution to form a mask; opening a radio frequency power supply to input energy of 50-100 W to ignite plasma, and then opening a baffle to deposit a transition metal film; and finally, placing the diamond substrate into a quartz glass tube to perform vacuum sealing, and performing high-temperature heating treatment. The application further relates to a method for obtaining a graphitized in-situ antenna by laser ablation. The application obtains a graphitized antenna pattern by using a transition metal high-temperature catalytic etching or laser ablation on the surface of the diamond, and the antenna can better reduce interference from external factors and improve integration.

The invention relates to a polishing pad applied to fine polishing of a diamond substrate and a preparation method of the polishing pad. The preparation method comprises the following specific steps: S1, integrally stirring the isocyanate, the curing agent, the micromolecular polyol, the macromolecular polyol, the surfactant, the foaming catalyst and the physical foaming agent to obtain a uniform mixture; s2, the mixture is poured into a mold with temperature control, forming and preliminary curing are carried out, and a disordered foam structure is generated; and S3, slicing operation is conducted on the formed body after post-curing, and the polishing pad with the uniform thickness is obtained. The preparation process is simple, the efficiency is high, and the obtained polishing pad has good elasticity, uniform pore structure and excellent surface hydrophilicity and is suitable for being applied to the precise polishing process of the diamond substrate.

The invention provides a semiconductor device, a preparation method thereof and a chip, relates to the technical field of semiconductor chips, and aims to solve the problem of poor adhesion between an electrode and the surface of a diamond substrate. The semiconductor device comprises a diamond substrate, a dielectric layer, an electrode and a grid electrode. The dielectric layer is arranged on one side of the diamond substrate; the grid is arranged on one side, away from the diamond substrate, of the dielectric layer; the electrode is arranged on one side of the diamond substrate, and the electrode and the dielectric layer are located on the same side of the diamond substrate; the electrodes comprise a first electrode and a second electrode, and the dielectric layer is at least partially arranged between the first electrode and the second electrode; the grid electrode is arranged on one side, far away from the diamond substrate, of the dielectric layer; wherein the electrode comprises a first metal layer; the material of the first metal layer comprises first metal and metal carbide of the first metal, and the metal carbide of the first metal is located on the side, close to the diamond substrate, of the first metal layer.