234 results about "Diamond substrate" patented technology

The invention belongs to the technical field of metamaterials, and particularly relates to a diamond substrate lattice metamaterial and an additive manufacturing method thereof. The structure is designed based on the geometric configuration of a diamond lattice, and has excellent high specific absorption mechanical properties. The design process comprises the following steps: firstly, carrying out spatial registration positioning on the basis of a unit cell structure with a preset wall thickness t and a unit cell width a; then, through a multi-unit-cell splicing design, the unit cells are spliced repeatedly for 12 times to form three-dimensional periodic stacking; then, the stacked structure is cut along the six datum planes; then cross plates are inserted into the six cutting faces respectively to enhance the integrity and strength of the structure; and finally, a complete DM plate lattice metamaterial structure is formed. The structure is provided with a plate-plate cross supporting framework, a complex three-dimensional inner cavity and highly symmetrical space distribution, the energy absorption capacity under unit mass is greatly improved, the mechanical properties are basically consistent in multiple directions, and the structure is suitable for the engineering fields of impact protection, energy absorption buffering and the like.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The invention provides a high-performance nitrogen vacancy color center diamond material under yttrium oxide protection and a preparation method and application thereof, and belongs to the technical field of quantum materials. The preparation method comprises the following steps: firstly carrying out electron irradiation and cleaning on a diamond substrate, then processing by adopting nitrogen plasma, then depositing an yttrium oxide coating, and annealing the diamond substrate deposited with the yttrium oxide coating under a vacuum condition to obtain the high-performance nitrogen vacancy color center diamond material. According to the method, the diamond is treated through the nitrogen plasma, so that the displacement nitrogen concentration in the diamond can be increased, and the NV-color center concentration can be increased in the subsequent annealing treatment process; meanwhile, the yttrium oxide coating is deposited on the diamond substrate, so that defects on the surface of the diamond can be reduced, the NV-color center concentration is increased, and the prepared diamond material has excellent corrosion resistance. The diamond material prepared by the preparation method can be used for preparing quantum sensors used under extreme conditions.

The invention discloses a high-gain diamond logic phase inverter and a preparation method thereof, and aims to solve the problem that the voltage gain of an existing logic phase inverter is relatively small. According to the high-gain diamond logic inverter, a diamond substrate is subjected to hydrotreating through hydrogen plasma to form the diamond substrate with a hydrogen terminal, a conducting channel is formed after the surface of the hydrogen terminal is in contact with air, and a first source electrode, a first drain electrode, a second source electrode and a second drain electrode are arranged on the diamond substrate. A first ferroelectric medium layer and a second ferroelectric medium layer are deposited on a diamond substrate, a first grid electrode is arranged on the first ferroelectric medium layer, and a second grid electrode is arranged on the second ferroelectric medium layer. According to the invention, an electron beam evaporation process is adopted to form an orthorhombic phase on a ferroelectric material deposited at a low temperature, the ferroelectric material has convertible ferroelectric characteristics, and ultra-steep sub-threshold swing is realized; the surface conductivity can be regulated and controlled by treating the surface of the hydrogen terminal diamond through the oxygen plasma, current matching is achieved, and the logic inverter works in a deep subthreshold region.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

The present application relates to a kind of hydrogen terminal diamond / gallium oxide hetero lateral diode and preparation method, lateral diode includes: diamond substrate layer, n type Ga2O3 layer, hydrogen terminal diamond surface layer, cathode and anode, wherein, the n type Ga2O3 layer is located on one side of the diamond substrate layer, the hydrogen terminal diamond surface layer is located on the other side of the diamond substrate layer, the cathode is located on the n type Ga2O3 layer, the anode is located on the hydrogen terminal diamond surface layer.This lateral diode is combined together by the method of hetero integration p type electrically conductive diamond and n type electrically conductive Ga2O3, preparation ultra-wide bandgap semiconductor hetero integrated quasi-vertical diode device, effectively solve the problem that diamond is difficult to realize n type doping, gallium oxide is difficult to realize p type doping, improve the breakdown voltage of diode, realize ultra-wide bandgap semiconductor complementary conduction device.

The invention relates to an embedded micro-fluidic active heat dissipation structure based on a diamond substrate and a preparation method, and belongs to the technical field of heat dissipation. The embedded micro-fluidic active heat dissipation structure based on the diamond substrate comprises the diamond substrate and a cover plate combined on one side of the diamond substrate; a micro-fluid channel system is formed from the surface of one side, close to the cover plate, of the diamond substrate to the interior of the diamond substrate, and the micro-fluid channel system comprises an inlet manifold, a plurality of groups of jet hole arrays, a plurality of micro-channels and an outlet manifold; a fluid disturbance structure is arranged in each micro-channel in the fluid flowing direction. According to the embedded micro-fluidic active heat dissipation structure disclosed by the invention, a micro-fluidic channel system with a specific shape is constructed in the diamond substrate, and jet reinforcement, disturbance enhancement and manifold shunting design are combined, so that the ultrahigh heat dissipation capability under low energy consumption is realized, the problem that the heat dissipation efficiency of an existing silicon-based micro-channel is limited is effectively solved, and the heat dissipation efficiency of the silicon-based micro-channel is improved. And an efficient, stable and integratable thermal management scheme is provided for a high-power electronic device.

An irradiation-resistant diamond Schottky diode and its fabrication method are disclosed. The purpose of this invention is to solve the problem of poor radiation resistance stability in Schottky diodes. In this irradiation-resistant diamond Schottky diode, p-type diodes are epitaxially grown on an intrinsic diamond substrate. + Diamond epitaxial layer, in p + An ohmic electrode is deposited in a portion of the upper surface of the diamond epitaxial layer, at p + p-type epitaxial growth is performed on the region of the diamond epitaxial layer where no ohmic electrode is deposited. ‑ Type II diamond drift layer, in p ‑ Easily oxidizable metal electrodes are deposited on a diamond drift layer, serving as Schottky electrodes. These electrodes are then terminated with oxygen. ‑ A metal oxide layer is formed between the drift layers of the diamond. This invention utilizes a low work function, easily oxidizable metal as a Schottky electrode. The low work function, easily oxidizable metal passivates the oxygen terminals on the diamond surface. The oxide layer formed on the diamond surface makes the oxygen terminals less susceptible to radiation-induced reconstruction, resulting in stronger radiation resistance.

The application provides a preparation method of a diamond CMOS inverter and the inverter, and relates to the technical field of super-wide band gap semiconductor field effect transistor devices. The method comprises the following steps: introducing boron elements and nitrogen elements into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source, so as to grow an n-type diamond epitaxy on a diamond substrate layer; treating the diamond substrate after depositing a metal mask by using hydrogen plasma, so as to prepare a p-type active region on a second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS field effect tube gate dielectric layer, a PMOS field effect tube gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. In this way, the hydrogen-terminated diamond preparation process and the diamond boron-nitrogen co-doping process are used to simultaneously form the p-type active region and the n-type active region on a single monocrystalline diamond surface, so that the preparation of the CMOS inverter on the single diamond is realized.

The polishing device comprises a base, a two-dimensional driving mechanism is installed above the base through a support and drives a vertical electric cylinder to move forwards, backwards, leftwards and rightwards, a pressure sensor is installed at the lower end of a telescopic shaft of the vertical electric cylinder, and the two-dimensional driving mechanism drives the vertical electric cylinder to move forwards, backwards, leftwards and rightwards. A mounting plate is mounted at the bottom of the pressure sensor, and a detachable composite buffering polishing head is mounted at the bottom of the mounting plate. Mixed liquid nozzles are mounted on the left side and the right side of the composite buffer polishing head; according to the polishing device for manufacturing the ultrathin single crystal diamond substrate, chemical and mechanical cooperative polishing and flexible buffering compensation are achieved, a rectangular hole of the mounting frame allows the polishing head to move slightly, local stress concentration is eliminated, polishing uniformity is improved, the green manufacturing characteristic is achieved, modular maintenance is achieved, the detachable composite buffering polishing head and a bolt are designed to be replaced quickly, and maintenance is convenient.

The invention provides a graphite-diamond composite attenuation material, a preparation method thereof and a terahertz traveling wave tube. The method for preparing the graphite-diamond composite attenuation material comprises the steps that laser is focused in a diamond base material, laser treatment is conducted on a target position in the diamond base material, a patterned modified area is obtained, and a plurality of graphite spots are distributed in the patterned modified area; carrying out high-temperature heat treatment on the diamond base material subjected to laser treatment; according to the graphite-diamond composite attenuation material, diamond serves as a medium phase, and graphite serves as an attenuation phase. According to the invention, the femtosecond laser performs accurate energy impact on the patterned graphite phase position in the diamond base material as the medium phase, and high-temperature heat treatment is assisted, so that the microwave attenuation performance of the graphite-diamond composite attenuation material can be improved.

This invention provides a self-splicing large-size single-crystal diamond substrate and its manufacturing method, belonging to the field of single-crystal diamond technology. The method includes the following steps: in-situ printing a light-treated resin barrier layer on the non-splicing surface of the single-crystal diamond; mechanically grinding the splicing surface of the single-crystal diamond; immersing the splicing surface of the single-crystal diamond in a magnetic nanoparticle precursor dispersion; aligning the splicing surfaces of the single-crystal diamonds to be spliced ​​with each other, applying an external magnetic field in a specific direction to align and tightly adhere the splicing surfaces; subjecting the spliced ​​diamond to high-temperature annealing in a reducing atmosphere or vacuum environment; and placing the spliced ​​diamond in a strong acid cleaning solution to dissolve and remove residual metals and impurities from the diamond surface. This invention utilizes small-size single-crystal diamonds with excellent surface quality for splicing to obtain large-size single-crystal diamonds, preserving the thermal and mechanical properties of single-crystal diamonds while achieving wafer-level large-size expansion.

The application discloses a method for obtaining a graphitized in-situ antenna by ablation of a diamond surface and application thereof, and aims at solving problems of a current microwave antenna, such as great interference from external factors and poor system integration. The method for obtaining the graphitized in-situ antenna comprises the following steps: firstly, cleaning a diamond substrate; secondly, spin-coating a photoresist on the surface of the cleaned diamond substrate, performing photoetching according to an antenna pattern, and then immersing the photoresist in a developing solution to form a mask; opening a radio frequency power supply to input energy of 50-100 W to ignite plasma, and then opening a baffle to deposit a transition metal film; and finally, placing the diamond substrate into a quartz glass tube to perform vacuum sealing, and performing high-temperature heating treatment. The application further relates to a method for obtaining a graphitized in-situ antenna by laser ablation. The application obtains a graphitized antenna pattern by using a transition metal high-temperature catalytic etching or laser ablation on the surface of the diamond, and the antenna can better reduce interference from external factors and improve integration.

The invention relates to a polishing pad applied to fine polishing of a diamond substrate and a preparation method of the polishing pad. The preparation method comprises the following specific steps: S1, integrally stirring the isocyanate, the curing agent, the micromolecular polyol, the macromolecular polyol, the surfactant, the foaming catalyst and the physical foaming agent to obtain a uniform mixture; s2, the mixture is poured into a mold with temperature control, forming and preliminary curing are carried out, and a disordered foam structure is generated; and S3, slicing operation is conducted on the formed body after post-curing, and the polishing pad with the uniform thickness is obtained. The preparation process is simple, the efficiency is high, and the obtained polishing pad has good elasticity, uniform pore structure and excellent surface hydrophilicity and is suitable for being applied to the precise polishing process of the diamond substrate.

A method provides a single-crystal diamond substrate having a growth surface. A diamond growth inhibitor (DGI) is positioned over a diamond inhibition area of the growth surface. A first diamond portion having a first dopant concentration is deposited using chemical vapor deposition over a growth area of the growth surface. The diamond growth inhibitor and non-diamond carbon thereon are removed.

A substrate comprising diamond has NV− centers in a concentration greater than about 0.5 parts per million (ppm). The method for producing this diamond substrate includes providing diamond being doped with nitrogen, irradiating at least a partial surface of the substrate with radiation that creates vacancies in the diamond, and carrying out a second heat treatment of the substrate at a certain temperature. The substrate can be used as a sensor element of a magnetometer or also as a qubit of a quantum computer.

The embodiment of the application provides a reflector and an optical device, which comprises a first electrode, a diamond substrate layer, a first graphene layer, a buffer heat conduction layer, an active region and a second electrode which are sequentially stacked from bottom to top. The diamond substrate layer is provided with a groove, and the first graphene layer extends into the groove to form a heat conduction path of the active region to the diamond substrate layer. The heat conduction path is formed by the diamond substrate layer and the first graphene layer extending into the groove, high-efficiency heat conduction is realized in combination with the buffer heat conduction layer, the lattice mismatch between the diamond and the semiconductor material is relieved by using the graphene, and the advantages of significantly reducing the interface thermal resistance, improving the heat dissipation efficiency of the device and the working stability are achieved.

The present invention relates to a nitride semiconductor device formed on a diamond substrate and a method for manufacturing a nitride semiconductor device, and more specifically, to a method for manufacturing a nitride semiconductor device formed on a diamond substrate in which twinning defects in a diamond layer formed on the substrate are prevented depending on the type of substrate and the orientation of the crystal plane, and by forming a single-crystal nitride semiconductor device alone on the diamond layer or forming a single-crystal nitride semiconductor device and a diamond semiconductor device simultaneously, the nitride semiconductor device and the nitride semiconductor device have high voltage, high frequency, and radiation resistance characteristics and improved heat dissipation performance.

The application discloses a multi-groove diamond substrate surrounded AlN / GaN heterojunction and a preparation method thereof. The heterojunction comprises a diamond substrate with a plurality of grooves, an AlN layer in the grooves, and a GaN epitaxial layer and an AlN epitaxial layer on the surface of the diamond substrate. The multi-groove diamond substrate surrounded AlN / GaN heterojunction provided by the application adopts a multi-groove diamond substrate as a heat dissipation material, greatly increases the heat dissipation capacity of the device, and improves the performance of the device. The diamond substrate has stable chemical properties, and is beneficial to improving the service life of the device.

The application belongs to the technical field of semiconductor processing, and particularly relates to a diamond substrate cutting device and a cutting method, which comprises a mounting frame, a cutting component, a height adjusting component, a feeding component, a mounting component and a rotating component. The controller controls the opening of the vacuum chuck control valve covered by the diamond substrate, so that the covered vacuum cavity is used to fix the diamond substrate through negative pressure adsorption. Then, the controller controls the height adjusting component to adjust the vertical height of the cutting blade. The controller controls the rotation of the cutting motor and the feeding component to drive the cutting blade to cut the diamond substrate below. After the cutting is completed, the feeding component stops. The controller controls the rotating component to drive the diamond substrate on the mounting component to rotate to the next cutting position. The above operation is repeated to cut all the required cutting positions on the diamond substrate, so that the automatic cutting of the diamond substrate is realized, and the cutting efficiency of the diamond substrate is improved.

The invention discloses an ohmic contact device for improving boron doping by inducing graphite and a preparation method of the ohmic contact device, and relates to the technical field of microelectronics. The substrate is an intrinsic diamond substrate; the lightly doped diamond epitaxial layer is positioned on the upper surface of the substrate; the heavily-doped diamond epitaxial layer is located on the upper surface of the lightly-doped diamond epitaxial layer; the nano graphite layer is positioned on the upper surface of the heavily doped diamond epitaxial layer; the composite conductive layer is located on the upper surface of the nano-graphite layer; and the electrode is positioned on the upper surface of the composite conductive layer and forms ohmic contact with the composite conductive layer. According to the invention, good ohmic contact performance can be realized.

The invention discloses a diamond substrate surface hydroxyl injection and polishing method, which uses MPCVD reaction to inject hydroxyl into the surface of a diamond substrate, and discloses a diamond substrate polishing method, which comprises the following steps: by regulating power, air pressure and the flow ratio of hydrogen, oxygen and water vapor, reacting on the surface of the substrate to form hydroxyl; then the diamond substrate to be polished with the hydroxyl injected into the surface is fixed to the position above a grinding disc of a single crystal grinding machine, grinding liquid is introduced between the diamond substrate to be polished and a grinding head, the single crystal grinding machine is started to polish the diamond substrate, and the polishing precision and the yield of the diamond substrate can be guaranteed; meanwhile, it is ensured that the semiconductor performance of the substrate is not affected, atomic-scale roughness control over the surface of the diamond substrate is achieved, and it is ensured that the surface roughness Ra of the polished diamond substrate is smaller than or equal to 0.5 nm.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

The application discloses a rough grinding liquid for diamond substrates and a preparation method thereof, and a rough grinding method for diamond substrates, and relates to the technical field of diamond processing. The rough grinding liquid for diamond substrates comprises the following components in mass parts: diamond 0.5-1.5 parts, dispersing agent 0.1-1 part, pH regulator 1-5 parts, suspending agent 0.1-1 part, and water 88-98 parts; wherein the D50 of the diamond is 10-50 mu m; the suspending agent comprises at least one of xanthan gum, carbomer, sodium polyacrylate and bentonite; and the dispersing agent comprises at least one of polymaleic anhydride, sodium pyrophosphate, anhydrous sodium metasilicate and polyacrylamide. The technical scheme of the application can solve the problems of low grinding rate, large surface roughness and high total thickness deviation of the existing grinding liquid for diamond substrates by adjusting the particle size of the abrasive and the composition of the suspending agent and the dispersing agent.

Diamond substrate grinding equipment comprises a base, a placing plate is fixedly connected to the rear side wall of the base, a first soft clamp is fixedly connected to the upper portion of the front side wall of the placing plate, a grinding pen is hung in the first soft clamp, a placing base is fixedly connected to the upper side wall of the base, and the outer side of the placing base is sleeved with an air pipe; a second soft clamp is fixedly connected to one side wall of the base, an inflatable air bag is hung on the second soft clamp, and the inflatable air bag is communicated with one end of the air pipe through an air inlet pipe. Compared with the prior art, the diamond substrate clamping device has the advantages that the diamond substrate clamping device can adapt to diamond substrates with various side wall shapes through cooperation of the inflatable air bag, the air inlet pipe, the air pipe, the communicating pipe and the positioning mechanism, and the stable and reliable clamping effect can be achieved no matter the diamond substrates are flat, uneven or in other complex shapes. By means of the improvement, the applicability of the device is remarkably improved, and the clamping problem caused by limitation of the shape of the side wall in the prior art is solved.

The present disclosure relates to a method of manufacturing a diamond substrate that comprises a {111}-plane surface. The method comprises: - fabricating a plurality of mesa structures on a main diamond substrate, wherein the main diamond substrate comprises a first surface that has a planar orientation that has a misorientation angle relative to the {111} surface; - growing diamond on the first surface of the main diamond substrate by applying a vapor-phase synthesis method on at least the first surface of the main diamond substrate; - cutting the main diamond substrate along the {111} plane such that a distance between the first surface and a second surface that is arranged opposite of the first surface is reduced; and - removing material from the second surface until the main diamond substrate is separated in a plurality of diamond substrates that correspond to the plurality of mesa structures.

A metallized substrate adapted to receive a laser diode thereon that includes a diamond substrate, one or more, optional bonded metal layers deposited on the diamond substrate, wherein the one or more bonded metal layers have a bonded metal layer thickness, and one or more metal layers formed, by laser consolidation, on the one or more bonded metal layers, wherein the one or more metal layers have a metal layer thickness.

The embodiment of the invention provides a high electron mobility transistor based on N-type diamond and a preparation method thereof, and belongs to the technical field of semiconductors. The high electron mobility transistor comprises a diamond substrate; the N-type diamond layer is arranged on the diamond substrate and is used for forming a two-dimensional electron gas channel; the barrier layer is arranged on the N-type diamond layer, and the material of the barrier layer comprises one of Al2O3, hexagonal boron nitride and Cs; the source electrode and the drain electrode are arranged on the N-type diamond layer in a spaced mode and located on the two sides of the area where the barrier layer is located respectively; the grid electrode is arranged on the barrier layer. According to the invention, the performance of the HEMT can be optimized, so that the HEMT can be better suitable for high-temperature, high-voltage, high-frequency and high-power scenes, and the reliability of the HEMT is effectively improved.