375 results about "Diamond substrate" patented technology

The invention belongs to the technical field of metamaterials, and particularly relates to a diamond substrate lattice metamaterial and an additive manufacturing method thereof. The structure is designed based on the geometric configuration of a diamond lattice, and has excellent high specific absorption mechanical properties. The design process comprises the following steps: firstly, carrying out spatial registration positioning on the basis of a unit cell structure with a preset wall thickness t and a unit cell width a; then, through a multi-unit-cell splicing design, the unit cells are spliced repeatedly for 12 times to form three-dimensional periodic stacking; then, the stacked structure is cut along the six datum planes; then cross plates are inserted into the six cutting faces respectively to enhance the integrity and strength of the structure; and finally, a complete DM plate lattice metamaterial structure is formed. The structure is provided with a plate-plate cross supporting framework, a complex three-dimensional inner cavity and highly symmetrical space distribution, the energy absorption capacity under unit mass is greatly improved, the mechanical properties are basically consistent in multiple directions, and the structure is suitable for the engineering fields of impact protection, energy absorption buffering and the like.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

Spiral inductors, magnetic field sensors incorporating the spiral inductors, and methods of using the magnetic field sensors are provided. The spiral inductors include an electrically conductive spiral coil and a nitrogen vacancy (NV) diamond substrate. A thin barrier layer of a dielectric material separates the spiral coil from the surface of the NV diamond substrate and an overlayer of dielectric material is disposed over the spiral nanocoil. The integration of the spiral coil with an NV substrate in this manner creates a highly enhanced magnetic transduction and produces a simple, high-performance way to control and read out electromagnetic signals. Because the spiral inductors enable electromagnetic-to-optical signal conversion, they can be used as sensors for environmental or biomedical applications and spin-based computation.

The present invention discloses a liquid-cooled radiator structure based on a diamond microchannel, which includes a diamond substrate and a diamond epitaxial layer stacked. A plurality of diamond microchannels with a certain interval are arranged in the diamond substrate, and the diamond epitaxial layer is used to bond the object to be cooled on its surface. The present invention also discloses a manufacturing method of the radiator, which solves the problem that traditional heat sinks cannot be applied in extreme environments such as high temperature, high radiation, and strong corrosion.

The preparation method comprises the following steps: selecting an abrasive material base material, mixing the abrasive material base material with a silane coupling agent for chemical modification, coating the surface with a modified abrasive material with a functional layer, adding the modified abrasive material into a stirring container, and dispersing to obtain the rough polishing liquid applied to the diamond substrate. An oxidizing agent and a dispersing agent are added into the abrasive dispersion liquid to be stirred to form a polishing solution, the particle size distribution condition of the modified abrasive in the polishing solution is monitored in real time through an online particle size analyzer, and the ultrasonic power and the treatment time are automatically adjusted; adding a pH regulator into the polishing solution by adopting a step-by-step titration method, and adjusting the pH value to 6-9; the polishing solution is filtered through a micro-filtration membrane, undispersed particles and impurities are removed, and a polishing solution finished product is obtained; through the chemical modification and ultrasonic-assisted technology and the real-time monitoring and automatic adjusting process, the dispersity of the grinding material and the uniformity of the polishing solution are remarkably improved, and the particle size distribution of the grinding material is optimized, so that the high-quality polishing solution is obtained.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

The invention provides a high-performance nitrogen vacancy color center diamond material under yttrium oxide protection and a preparation method and application thereof, and belongs to the technical field of quantum materials. The preparation method comprises the following steps: firstly carrying out electron irradiation and cleaning on a diamond substrate, then processing by adopting nitrogen plasma, then depositing an yttrium oxide coating, and annealing the diamond substrate deposited with the yttrium oxide coating under a vacuum condition to obtain the high-performance nitrogen vacancy color center diamond material. According to the method, the diamond is treated through the nitrogen plasma, so that the displacement nitrogen concentration in the diamond can be increased, and the NV-color center concentration can be increased in the subsequent annealing treatment process; meanwhile, the yttrium oxide coating is deposited on the diamond substrate, so that defects on the surface of the diamond can be reduced, the NV-color center concentration is increased, and the prepared diamond material has excellent corrosion resistance. The diamond material prepared by the preparation method can be used for preparing quantum sensors used under extreme conditions.

The invention discloses a wafer integration method for improving the bonding strength of gallium nitride and diamond, and belongs to the field of semiconductors, the wafer integration method comprises the steps that a gallium nitride epitaxial wafer and a temporary substrate are provided, and the gallium nitride epitaxial wafer comprises a substrate layer and a gallium nitride epitaxial layer; sequentially laminating the gallium nitride epitaxial wafer, the bonding material layer and the temporary substrate and carrying out first bonding to form a first bonded wafer; removing a substrate layer in the first bonding wafer to obtain a first sample; etching the gallium nitride epitaxial layer to form a groove; providing a diamond substrate, and etching the diamond substrate to form protrusions; the protrusions on the surface of the diamond substrate and the grooves in the surface of the gallium nitride epitaxial layer are clamped, the diamond substrate and the gallium nitride epitaxial layer are bonded for the second time, and a second bonded wafer is obtained; and removing the temporary substrate and the bonding material layer in the second bonding wafer to obtain the diamond-based gallium nitride wafer, thereby improving the bonding strength between the gallium nitride and the diamond substrate.

The invention discloses a single crystal diamond, a preparation method thereof and a chip, and relates to the technical field of semiconductors, and the preparation method of the single crystal diamond comprises the following steps: cutting a splicing side surface of a first diamond substrate and a splicing side surface of a second diamond substrate, the splicing side face of the first diamond substrate and the splicing side face of the second diamond substrate are both in a sawtooth shape. And splicing the sawtooth-shaped splicing side surface of the first diamond substrate with the sawtooth-shaped splicing side surface of the second diamond substrate to form the diamond substrate. An epitaxial layer is formed on the diamond substrate. The invention aims to realize seamless splicing of single crystal diamonds on splicing side surfaces of a crystal face (110). The single crystal diamond can be used as a substrate of a semiconductor device.

The invention belongs to the field of quantum sensors, and discloses a diamond spin quantum sensor and a preparation method thereof. The preparation method comprises the following steps: cleaning and polishing a monocrystal diamond substrate; a microwave plasma chemical vapor deposition method is adopted for preparing a diamond film with the nitrogen-vacancy color center density larger than 10 < 16 > cm <-3 > on the single crystal diamond substrate; and preparing an anti-ferromagnetic NiO film on the diamond film by adopting a radio frequency magnetron sputtering method to obtain the diamond spin quantum sensor. The diamond spin quantum sensor disclosed by the invention contains a high-concentration nitrogen-vacancy color center diamond film, and nitrogen-vacancy color center measurement has extremely high spatial resolution, so that the change of a nano-scale magnetic field can be detected; the diamond spin quantum sensor is applied to precise measurement of the magnetic moment of an antiferromagnetic film and the magnetic coupling effect of an antiferromagnetic / ferromagnetic heterojunction interface. And the preparation method is simple, economical and applicable, and provides possibility for application of the diamond nitrogen-vacancy color center material in the field of quantum magnetic sensors.

The invention provides a preparation method of a diamond CMOS (Complementary Metal-Oxide-Semiconductor Transistor) phase inverter and the phase inverter, and relates to the technical field of ultra-wide forbidden band semiconductor field effect transistor devices. Comprising the following steps: introducing a boron element and a nitrogen element into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source so as to grow an n-type diamond epitaxy on a diamond substrate layer; hydrogen plasma is used for processing the diamond substrate with the deposited metal mask, so that a p-type active region is prepared on the second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS (N-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer, a PMOS (P-channel Metal Oxide Semiconductor) field effect transistor gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. Therefore, a hydrogen terminal diamond preparation process and a diamond boron-nitrogen co-doping process are used, and a p-type active region and an n-type active region are simultaneously formed on the surface of the single-chip single crystal diamond, so that the preparation of the CMOS phase inverter is realized on the single-chip diamond.

The invention discloses a high-gain diamond logic phase inverter and a preparation method thereof, and aims to solve the problem that the voltage gain of an existing logic phase inverter is relatively small. According to the high-gain diamond logic inverter, a diamond substrate is subjected to hydrotreating through hydrogen plasma to form the diamond substrate with a hydrogen terminal, a conducting channel is formed after the surface of the hydrogen terminal is in contact with air, and a first source electrode, a first drain electrode, a second source electrode and a second drain electrode are arranged on the diamond substrate. A first ferroelectric medium layer and a second ferroelectric medium layer are deposited on a diamond substrate, a first grid electrode is arranged on the first ferroelectric medium layer, and a second grid electrode is arranged on the second ferroelectric medium layer. According to the invention, an electron beam evaporation process is adopted to form an orthorhombic phase on a ferroelectric material deposited at a low temperature, the ferroelectric material has convertible ferroelectric characteristics, and ultra-steep sub-threshold swing is realized; the surface conductivity can be regulated and controlled by treating the surface of the hydrogen terminal diamond through the oxygen plasma, current matching is achieved, and the logic inverter works in a deep subthreshold region.

The invention relates to a CVD monocrystalline diamond growth temperature field stability improving method and a stabilizing device thereof.A through hole is formed in a sunken groove of a molybdenum table, after a monocrystalline diamond substrate in the sunken groove is tightly attached to the molybdenum table, nickel-based paste brazing filler metal is injected into the through hole, vacuum heating and welding are conducted, and the stability of a CVD monocrystalline diamond growth temperature field is improved. The substrate is pulled to be in close contact with the bottom face of the concave groove of the molybdenum table through the brazing filler metal which is welded and solidified, no gap is reserved, the heat conduction uniformity between the substrate and the concave groove is improved, the problem of local concentration of heat and temperature is avoided, the temperature field distribution consistency of the substrate and the upper surface of the molybdenum table is better, growth of all parts of the substrate is more uniform, and the service life of the substrate is prolonged. And the grown monocrystal diamond has fewer edge polycrystals, the morphology of the monocrystal diamond is regular, the internal stress is greatly reduced, and the application of the product in various industries and fields is facilitated.

The invention provides a Fenton reagent, a polishing solution, a polishing method of a diamond substrate and a polished diamond wafer. The invention provides a Fenton reagent. The Fenton reagent comprises a hydrogen peroxide solution and a composition containing ferrite, the ferrite-containing composition comprises ferrite, a host molecule and a guest molecule, the host molecule is provided with a hydrophobic cavity for accommodating the guest molecule; the guest molecule has a conjugated pi bond that coordinates with Fe. The Fenton reagent and abrasive particles are adopted as a polishing solution, diamond is polished under irradiation of visible light, stability of the concentration of Fe < 2 + > in the polishing solution can be guaranteed, stable supply of hydroxyl radicals is achieved, and the high-quality diamond surface can be obtained.

To provide a diamond substrate manufacturing method capable of quickly manufacturing a substrate from a workpiece made of diamond.SOLUTION: After or at the same time of forming an exfoliation layer inside a workpiece, by radiating a vaporizing laser beam with a wavelength penetrating through diamond and absorbed in an allotrope of carbon other than diamond to the workpiece, the exfoliation layer is heated to generate carbon dioxide from carbon contained in a modification part and oxygen contained in atmosphere. In this case, the modification part is decreased together with generation of carbon dioxide to form a cavity, and gas existing in the cavity and a crack is locally heated and expanded. Thereby, the crack is quickly extended on the exfoliation layer and the workpiece is cleaved. As a result, a substrate is quickly manufactured from the workpiece.SELECTED DRAWING: Figure 3

The invention belongs to the technical field of substrate surface treatment, and particularly relates to a diamond substrate surface treatment device and method. The fixing frame is fixedly connected to the top of the workbench; the mounting seat is arranged below the fixing frame; a second motor is started, an output shaft of the second motor drives a rotating frame to rotate, the rotating frame drives a first grinding wheel and a second grinding wheel to rotate, and when the first grinding wheel rotates to the lowest position, rough grinding is conducted; when the second grinding wheel rotates to the bottommost part, fine grinding is carried out; the effect of converting rough grinding and fine grinding is achieved; when the drying box rotates to the bottommost part, the drying box is used for drying the polished diamond sheets; during grinding, a third motor needs to be started, a second gear is driven to rotate through an output shaft of the third motor, a first gear is driven to rotate through the second gear, a rotating rod is driven to rotate through the first gear, and a first grinding wheel and a second grinding wheel are driven to rotate through the rotating rod, so that the grinding effect is achieved.

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

The invention is applied to the technical field of semiconductor processing, and discloses a coarse grinding fluid applied to a diamond substrate, which comprises the following components: a diamond grinding material, a suspending agent, a dispersing agent, an antirust agent, a lubricant, a pH regulator and deionized water, the coarse grinding liquid applied to the diamond substrate comprises the following components in percentage by weight: 0.1 to 5 percent of diamond grinding material, 0.01 to 0.5 percent of suspending agent, 0.01 to 5 percent of dispersing agent, 0.1 to 8 percent of antirust agent, 0.5 to 5 percent of lubricating agent, 0.01 to 0.5 percent of pH regulator and 74 to 95 percent of deionized water. According to the coarse grinding liquid applied to the diamond substrate, the type 3 or more diamond grinding materials are selected, the particle size D50 is 20-60 microns, the particle size D100 is smaller than 100 microns, and the surface of the substrate can be smoother while a surface material of the diamond substrate is removed.

The invention discloses a diamond diode capable of selecting growth and regulating doping concentration and a preparation method thereof. The preparation method comprises the following steps: growing a (100) crystal orientation lightly doped diamond layer on a (100) crystal orientation intrinsic diamond substrate; etching the upper surface of the lightly doped diamond layer to form a groove, wherein the depth of the groove is smaller than the thickness of the lightly doped diamond layer; carrying out selective growth in the groove to form a heavily doped diamond layer with (111) crystal orientation; hydrogen terminals on the upper surface of the lightly doped diamond layer and the upper surface of the heavily doped diamond layer are removed; growing an ohmic electrode on the upper surface of the heavily doped diamond layer; and a Schottky electrode grows on the upper surface of the lightly doped diamond layer, and the ohmic electrode and the Schottky electrode are arranged at an interval. According to the invention, the carrier concentration difference between the drift region and the ohmic contact region of the device can be increased to 4-5 orders of magnitude, the reverse breakdown voltage and the breakdown field strength of the Schottky diode are improved, and the leakage current is reduced.

The invention discloses a cascode enhanced diamond and gallium nitride heterogeneous integrated power device which comprises a GaN-based field effect transistor unit, a diamond-based field effect transistor unit and electrode interconnection metal. The GaN-based field effect transistor unit is an enhancement mode transistor, and the diamond-based field effect transistor unit is a depletion mode transistor and is arranged on the same diamond substrate. A diamond transistor gate electrode and a GaN transistor source electrode are connected and serve as a source electrode of the device; the source electrode of the diamond transistor is connected with the drain electrode of the GaN transistor; the gate electrode of the GaN transistor is used as the gate of the device; and the drain electrode of the diamond transistor is used as the drain electrode of the device to form a cascode enhanced device. Monolithic heterogeneous integration of a GaN-based transistor and a diamond-based transistor is realized through a diamond substrate GaN wafer material, and a cascode enhanced diamond and gallium nitride heterogeneous integrated power device is formed through electrode interconnection, so that technical support is provided for a next-generation high-performance power electronic system.

The invention discloses a stacked laser array, a photonic device and related application, and relates to the technical field of high-speed optical communication, and the stacked laser array comprises a plurality of high-power laser arrays, a plurality of diamond substrates, a diamond carrier and an optical path coupling module. All the high-power laser arrays and the diamond substrates are stacked, a group of diamond substrates is arranged between every two adjacent groups of high-power laser arrays, and the high-power laser arrays and the diamond substrates are connected through bonding wires to form a stacked array; the stacked array is fixed on one side of the upper surface of the diamond carrier, the light path coupling module is fixed on the other side of the upper surface of the diamond carrier, and the high-power laser array is aligned with the light path coupling module. The high-power laser array is subjected to three-dimensional packaging by using a diamond material, and the integration level and the heat dissipation efficiency of the laser array are effectively improved through reasonable layout.

The invention discloses a self-aligned anode ultra-wide bandgap semiconductor diode rectifying device on a diamond high-thermal-conductivity substrate and a preparation method thereof, the device comprises a gallium oxide epitaxial wafer on the diamond substrate, one end of the upper part of the gallium oxide epitaxial wafer is provided with an ion implantation region, and a cathode electrode is prepared above the ion implantation region; an anode electrode is prepared at the other end above the gallium oxide epitaxial wafer on the diamond substrate, the ohmic contact resistance of the cathode electrode and the gallium oxide epitaxial wafer on the diamond substrate is reduced by the ion implantation region, and the anode electrode and the gallium oxide epitaxial wafer on the diamond substrate form Schottky contact; the preparation method comprises the following steps: preprocessing a gallium oxide epitaxial wafer on a diamond substrate; ion implantation; preparing a cathode electrode and an anode electrode; and performing self-aligned anode etching and in-situ annealing to finally form the gallium oxide self-aligned anode diode on the diamond. According to the invention, the breakdown voltage of the device is improved while the preparation process steps of the device are simplified.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

To provide a diamond substrate manufacturing method capable of quickly manufacturing a substrate from a workpiece made of diamond.SOLUTION: After or at the same time of forming an exfoliation layer inside a workpiece, by radiating a vaporizing laser beam with a wavelength penetrating through diamond and absorbed in an allotrope of carbon other than diamond, the exfoliation layer is heated to generate carbon dioxide from carbon contained in a modification part and oxygen contained in atmosphere. Also, the vaporizing laser beam is radiated to a first area included in the workpiece, and then radiated to a second area nearer a center of the workpiece than the first area. In this case, the modification part is decreased together with generation of carbon dioxide to form a cavity, and gas existing in the cavity and a crack is locally heated and expanded. Thereby, the crack is quickly extended on the exfoliation layer and the workpiece is cleaved. As a result, a substrate is quickly manufactured from the workpiece.SELECTED DRAWING: Figure 3

The invention discloses an n-type doped low-resistance ohmic contact diamond and a preparation method thereof. The preparation method comprises the following steps: selecting an unintentionally doped diamond as a diamond substrate; injecting P ions on the diamond substrate at a first preset temperature, and forming an injection layer on the upper surface of the diamond substrate; annealing the injection layer at a second preset temperature to redistribute the P element in the injection layer; and depositing a metal layer on the upper surface of the injection layer. According to the method, the n-type doping of the diamond is realized through P ion implantation, the doping concentration is high, relatively high charged carrier concentration and good bulk conductivity can be realized under low activation energy, and the requirement of in-situ growth of the heavily phosphorus-doped diamond on equipment is reduced.

The invention provides a machining device for plasma double-sided polishing of diamond and a polishing machining method. The machining device comprises a plasma generator, a sealing cover and two polishing discs which can rotate mutually. The polishing disc is used as a polishing tool and also serves as a dielectric barrier layer of the plasma generator, the plasma generator is arranged in a closed cover, plasma containing active free radicals is generated between the upper polishing disc and the lower polishing disc, and the plasma containing the active free radicals can modify the diamond substrate, the upper polishing disc and the lower polishing disc. And finally, the diamond substrate is polished by the upper polishing disc and the lower polishing disc through rotation. The plasma auxiliary processing mode is effectively improved, and a vacuum chamber is not needed. According to the method, a surface damage layer left by grinding and rough polishing can be effectively eliminated, the polishing efficiency of the substrate can be effectively guaranteed, and meanwhile it can be guaranteed that the surface of the whole substrate reaches high surface quality.

The invention provides a diamond substrate screening method, which can be applied to the technical field of single crystal diamond material preparation, and comprises the following steps: carrying out crystal quality screening on diamond substrates, and selecting substrates meeting preset crystal quality to obtain a first screened substrate; performing stress state screening on the first screening substrate, and selecting a substrate meeting a preset stress state to obtain a second screening substrate; performing optical quality screening on the second screening substrate, and selecting a substrate meeting the preset optical quality to obtain a third screening substrate; performing surface quality screening on the third screening substrate, and selecting the substrate meeting the preset surface quality to obtain a fourth screening substrate; and crystal face deviation angle screening is conducted on the fourth screening substrate, the substrate meeting the preset crystal face deviation angle is selected, the target diamond substrate is obtained, and screening is completed. The epitaxial crystal quality of the CVD monocrystal diamond is improved by comprehensively evaluating substrate attributes such as crystal quality, stress state, defect distribution and surface quality.

The invention relates to the technical field of polarizing beam splitters, in particular to a polarizing beam splitter and a preparation method and application thereof. The polarizing beam splitter provided by the invention comprises a diamond substrate, a polarizing beam splitting film and a first metalized film layer which are positioned on the surface of one side of the diamond substrate, a broadband antireflection film positioned on the surface of the other side of the diamond substrate, and a second metalized film layer positioned on the side surface of the diamond substrate, the first metallized film layer is located at the edge position of the surface of one side of the diamond substrate. Diamond is adopted as a substrate material of the polarizing beam splitter, and the characteristic of high thermal conductivity of the diamond is utilized, so that heat generated when laser acts on a film layer and a substrate can be quickly conducted as soon as possible, and damage to the polarizing beam splitter caused by local temperature rise is relieved; the edge of the polarizing beam splitter is metalized, so that the beam splitter body and a metal tube shell or a water cooling structure can be integrally welded, and a high-reliability and low-leakage-rate vacuum sealing solution can be provided while the heat conduction efficiency is improved.

A method for preparing an interconnection line of a diamond device belongs to the field of processing and preparation of ultra-wide bandgap semiconductor electronic devices. It is characterized in that: designing a circuit layout and cleaning a diamond substrate (110); then performing a photolithography process to prepare device units (120) and an interconnection region (130); plating a metal catalyst (131) on the interconnection region of the diamond surface; and in-situ growing a conductive carbon nanomaterial (132) on the diamond surface as the interconnection line. The present invention obtains a low-resistance and stable ohmic contact interconnection line on the diamond substrate, effectively avoiding the limitation of device failure caused by the breakage of the interconnection line formed by an ultra-thin metal film at present; the carbon nanomaterial interconnection line can work normally under high-temperature and high-pressure conditions and can meet the requirements of the future working environment of diamond devices. The obtained interconnection line has a low contact resistance with the diamond substrate, strong bonding force, and can withstand high-temperature and high-pressure working environments, laying a good foundation for the back-end process of future diamond-based integrated circuit preparation.

Bonded diamond structures and methods for fabricating bonded diamond structures are described wherein a bonded diamond structure may comprise an inorganic oxide layer provided on a base substrate; and, a (100) oriented diamond substrate directly bonded to the oxide layer, the surface of the diamond substrate having an average surface roughness between 2 and 10 nm and the bonding being characterized by a shear strength equal to or larger than 2 MPa.