145 results about "Diamond substrate" patented technology

A power device electronics system includes a thermal management configuration in which a power electronics chip is attached to a copper substrate and a single crystal diamond substrate attached to the copper substrate. The copper substrate is sandwiched between a first side of the diamond substrate and the power electronics chip.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

The invention relates to an embedded micro-fluidic active heat dissipation structure based on a diamond substrate and a preparation method, and belongs to the technical field of heat dissipation. The embedded micro-fluidic active heat dissipation structure based on the diamond substrate comprises the diamond substrate and a cover plate combined on one side of the diamond substrate; a micro-fluid channel system is formed from the surface of one side, close to the cover plate, of the diamond substrate to the interior of the diamond substrate, and the micro-fluid channel system comprises an inlet manifold, a plurality of groups of jet hole arrays, a plurality of micro-channels and an outlet manifold; a fluid disturbance structure is arranged in each micro-channel in the fluid flowing direction. According to the embedded micro-fluidic active heat dissipation structure disclosed by the invention, a micro-fluidic channel system with a specific shape is constructed in the diamond substrate, and jet reinforcement, disturbance enhancement and manifold shunting design are combined, so that the ultrahigh heat dissipation capability under low energy consumption is realized, the problem that the heat dissipation efficiency of an existing silicon-based micro-channel is limited is effectively solved, and the heat dissipation efficiency of the silicon-based micro-channel is improved. And an efficient, stable and integratable thermal management scheme is provided for a high-power electronic device.

An irradiation-resistant diamond Schottky diode and its fabrication method are disclosed. The purpose of this invention is to solve the problem of poor radiation resistance stability in Schottky diodes. In this irradiation-resistant diamond Schottky diode, p-type diodes are epitaxially grown on an intrinsic diamond substrate. + Diamond epitaxial layer, in p + An ohmic electrode is deposited in a portion of the upper surface of the diamond epitaxial layer, at p + p-type epitaxial growth is performed on the region of the diamond epitaxial layer where no ohmic electrode is deposited. ‑ Type II diamond drift layer, in p ‑ Easily oxidizable metal electrodes are deposited on a diamond drift layer, serving as Schottky electrodes. These electrodes are then terminated with oxygen. ‑ A metal oxide layer is formed between the drift layers of the diamond. This invention utilizes a low work function, easily oxidizable metal as a Schottky electrode. The low work function, easily oxidizable metal passivates the oxygen terminals on the diamond surface. The oxide layer formed on the diamond surface makes the oxygen terminals less susceptible to radiation-induced reconstruction, resulting in stronger radiation resistance.

The application provides a preparation method of a diamond CMOS inverter and the inverter, and relates to the technical field of super-wide band gap semiconductor field effect transistor devices. The method comprises the following steps: introducing boron elements and nitrogen elements into a microwave plasma chemical vapor deposition chamber through a gaseous source or a solid source, so as to grow an n-type diamond epitaxy on a diamond substrate layer; treating the diamond substrate after depositing a metal mask by using hydrogen plasma, so as to prepare a p-type active region on a second n-type diamond epitaxy, and the first n-type diamond epitaxy becomes an n-type active region; and preparing a source electrode, a drain electrode, an NMOS field effect tube gate dielectric layer, a PMOS field effect tube gate dielectric layer and a gate electrode on the p-type active region and the n-type active region. In this way, the hydrogen-terminated diamond preparation process and the diamond boron-nitrogen co-doping process are used to simultaneously form the p-type active region and the n-type active region on a single monocrystalline diamond surface, so that the preparation of the CMOS inverter on the single diamond is realized.

The polishing device comprises a base, a two-dimensional driving mechanism is installed above the base through a support and drives a vertical electric cylinder to move forwards, backwards, leftwards and rightwards, a pressure sensor is installed at the lower end of a telescopic shaft of the vertical electric cylinder, and the two-dimensional driving mechanism drives the vertical electric cylinder to move forwards, backwards, leftwards and rightwards. A mounting plate is mounted at the bottom of the pressure sensor, and a detachable composite buffering polishing head is mounted at the bottom of the mounting plate. Mixed liquid nozzles are mounted on the left side and the right side of the composite buffer polishing head; according to the polishing device for manufacturing the ultrathin single crystal diamond substrate, chemical and mechanical cooperative polishing and flexible buffering compensation are achieved, a rectangular hole of the mounting frame allows the polishing head to move slightly, local stress concentration is eliminated, polishing uniformity is improved, the green manufacturing characteristic is achieved, modular maintenance is achieved, the detachable composite buffering polishing head and a bolt are designed to be replaced quickly, and maintenance is convenient.

The invention provides a graphite-diamond composite attenuation material, a preparation method thereof and a terahertz traveling wave tube. The method for preparing the graphite-diamond composite attenuation material comprises the steps that laser is focused in a diamond base material, laser treatment is conducted on a target position in the diamond base material, a patterned modified area is obtained, and a plurality of graphite spots are distributed in the patterned modified area; carrying out high-temperature heat treatment on the diamond base material subjected to laser treatment; according to the graphite-diamond composite attenuation material, diamond serves as a medium phase, and graphite serves as an attenuation phase. According to the invention, the femtosecond laser performs accurate energy impact on the patterned graphite phase position in the diamond base material as the medium phase, and high-temperature heat treatment is assisted, so that the microwave attenuation performance of the graphite-diamond composite attenuation material can be improved.

This invention provides a self-splicing large-size single-crystal diamond substrate and its manufacturing method, belonging to the field of single-crystal diamond technology. The method includes the following steps: in-situ printing a light-treated resin barrier layer on the non-splicing surface of the single-crystal diamond; mechanically grinding the splicing surface of the single-crystal diamond; immersing the splicing surface of the single-crystal diamond in a magnetic nanoparticle precursor dispersion; aligning the splicing surfaces of the single-crystal diamonds to be spliced ​​with each other, applying an external magnetic field in a specific direction to align and tightly adhere the splicing surfaces; subjecting the spliced ​​diamond to high-temperature annealing in a reducing atmosphere or vacuum environment; and placing the spliced ​​diamond in a strong acid cleaning solution to dissolve and remove residual metals and impurities from the diamond surface. This invention utilizes small-size single-crystal diamonds with excellent surface quality for splicing to obtain large-size single-crystal diamonds, preserving the thermal and mechanical properties of single-crystal diamonds while achieving wafer-level large-size expansion.

The application discloses a method for obtaining a graphitized in-situ antenna by ablation of a diamond surface and application thereof, and aims at solving problems of a current microwave antenna, such as great interference from external factors and poor system integration. The method for obtaining the graphitized in-situ antenna comprises the following steps: firstly, cleaning a diamond substrate; secondly, spin-coating a photoresist on the surface of the cleaned diamond substrate, performing photoetching according to an antenna pattern, and then immersing the photoresist in a developing solution to form a mask; opening a radio frequency power supply to input energy of 50-100 W to ignite plasma, and then opening a baffle to deposit a transition metal film; and finally, placing the diamond substrate into a quartz glass tube to perform vacuum sealing, and performing high-temperature heating treatment. The application further relates to a method for obtaining a graphitized in-situ antenna by laser ablation. The application obtains a graphitized antenna pattern by using a transition metal high-temperature catalytic etching or laser ablation on the surface of the diamond, and the antenna can better reduce interference from external factors and improve integration.

A method provides a single-crystal diamond substrate having a growth surface. A diamond growth inhibitor (DGI) is positioned over a diamond inhibition area of the growth surface. A first diamond portion having a first dopant concentration is deposited using chemical vapor deposition over a growth area of the growth surface. The diamond growth inhibitor and non-diamond carbon thereon are removed.

A substrate comprising diamond has NV− centers in a concentration greater than about 0.5 parts per million (ppm). The method for producing this diamond substrate includes providing diamond being doped with nitrogen, irradiating at least a partial surface of the substrate with radiation that creates vacancies in the diamond, and carrying out a second heat treatment of the substrate at a certain temperature. The substrate can be used as a sensor element of a magnetometer or also as a qubit of a quantum computer.

The embodiment of the application provides a reflector and an optical device, which comprises a first electrode, a diamond substrate layer, a first graphene layer, a buffer heat conduction layer, an active region and a second electrode which are sequentially stacked from bottom to top. The diamond substrate layer is provided with a groove, and the first graphene layer extends into the groove to form a heat conduction path of the active region to the diamond substrate layer. The heat conduction path is formed by the diamond substrate layer and the first graphene layer extending into the groove, high-efficiency heat conduction is realized in combination with the buffer heat conduction layer, the lattice mismatch between the diamond and the semiconductor material is relieved by using the graphene, and the advantages of significantly reducing the interface thermal resistance, improving the heat dissipation efficiency of the device and the working stability are achieved.

The present invention relates to a nitride semiconductor device formed on a diamond substrate and a method for manufacturing a nitride semiconductor device, and more specifically, to a method for manufacturing a nitride semiconductor device formed on a diamond substrate in which twinning defects in a diamond layer formed on the substrate are prevented depending on the type of substrate and the orientation of the crystal plane, and by forming a single-crystal nitride semiconductor device alone on the diamond layer or forming a single-crystal nitride semiconductor device and a diamond semiconductor device simultaneously, the nitride semiconductor device and the nitride semiconductor device have high voltage, high frequency, and radiation resistance characteristics and improved heat dissipation performance.

The application belongs to the technical field of semiconductor processing, and particularly relates to a diamond substrate cutting device and a cutting method, which comprises a mounting frame, a cutting component, a height adjusting component, a feeding component, a mounting component and a rotating component. The controller controls the opening of the vacuum chuck control valve covered by the diamond substrate, so that the covered vacuum cavity is used to fix the diamond substrate through negative pressure adsorption. Then, the controller controls the height adjusting component to adjust the vertical height of the cutting blade. The controller controls the rotation of the cutting motor and the feeding component to drive the cutting blade to cut the diamond substrate below. After the cutting is completed, the feeding component stops. The controller controls the rotating component to drive the diamond substrate on the mounting component to rotate to the next cutting position. The above operation is repeated to cut all the required cutting positions on the diamond substrate, so that the automatic cutting of the diamond substrate is realized, and the cutting efficiency of the diamond substrate is improved.

The invention discloses an ohmic contact device for improving boron doping by inducing graphite and a preparation method of the ohmic contact device, and relates to the technical field of microelectronics. The substrate is an intrinsic diamond substrate; the lightly doped diamond epitaxial layer is positioned on the upper surface of the substrate; the heavily-doped diamond epitaxial layer is located on the upper surface of the lightly-doped diamond epitaxial layer; the nano graphite layer is positioned on the upper surface of the heavily doped diamond epitaxial layer; the composite conductive layer is located on the upper surface of the nano-graphite layer; and the electrode is positioned on the upper surface of the composite conductive layer and forms ohmic contact with the composite conductive layer. According to the invention, good ohmic contact performance can be realized.

The invention discloses a diamond substrate surface hydroxyl injection and polishing method, which uses MPCVD reaction to inject hydroxyl into the surface of a diamond substrate, and discloses a diamond substrate polishing method, which comprises the following steps: by regulating power, air pressure and the flow ratio of hydrogen, oxygen and water vapor, reacting on the surface of the substrate to form hydroxyl; then the diamond substrate to be polished with the hydroxyl injected into the surface is fixed to the position above a grinding disc of a single crystal grinding machine, grinding liquid is introduced between the diamond substrate to be polished and a grinding head, the single crystal grinding machine is started to polish the diamond substrate, and the polishing precision and the yield of the diamond substrate can be guaranteed; meanwhile, it is ensured that the semiconductor performance of the substrate is not affected, atomic-scale roughness control over the surface of the diamond substrate is achieved, and it is ensured that the surface roughness Ra of the polished diamond substrate is smaller than or equal to 0.5 nm.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

The application discloses a rough grinding liquid for diamond substrates and a preparation method thereof, and a rough grinding method for diamond substrates, and relates to the technical field of diamond processing. The rough grinding liquid for diamond substrates comprises the following components in mass parts: diamond 0.5-1.5 parts, dispersing agent 0.1-1 part, pH regulator 1-5 parts, suspending agent 0.1-1 part, and water 88-98 parts; wherein the D50 of the diamond is 10-50 mu m; the suspending agent comprises at least one of xanthan gum, carbomer, sodium polyacrylate and bentonite; and the dispersing agent comprises at least one of polymaleic anhydride, sodium pyrophosphate, anhydrous sodium metasilicate and polyacrylamide. The technical scheme of the application can solve the problems of low grinding rate, large surface roughness and high total thickness deviation of the existing grinding liquid for diamond substrates by adjusting the particle size of the abrasive and the composition of the suspending agent and the dispersing agent.

Diamond substrate grinding equipment comprises a base, a placing plate is fixedly connected to the rear side wall of the base, a first soft clamp is fixedly connected to the upper portion of the front side wall of the placing plate, a grinding pen is hung in the first soft clamp, a placing base is fixedly connected to the upper side wall of the base, and the outer side of the placing base is sleeved with an air pipe; a second soft clamp is fixedly connected to one side wall of the base, an inflatable air bag is hung on the second soft clamp, and the inflatable air bag is communicated with one end of the air pipe through an air inlet pipe. Compared with the prior art, the diamond substrate clamping device has the advantages that the diamond substrate clamping device can adapt to diamond substrates with various side wall shapes through cooperation of the inflatable air bag, the air inlet pipe, the air pipe, the communicating pipe and the positioning mechanism, and the stable and reliable clamping effect can be achieved no matter the diamond substrates are flat, uneven or in other complex shapes. By means of the improvement, the applicability of the device is remarkably improved, and the clamping problem caused by limitation of the shape of the side wall in the prior art is solved.

The present disclosure relates to a method of manufacturing a diamond substrate that comprises a {111}-plane surface. The method comprises: - fabricating a plurality of mesa structures on a main diamond substrate, wherein the main diamond substrate comprises a first surface that has a planar orientation that has a misorientation angle relative to the {111} surface; - growing diamond on the first surface of the main diamond substrate by applying a vapor-phase synthesis method on at least the first surface of the main diamond substrate; - cutting the main diamond substrate along the {111} plane such that a distance between the first surface and a second surface that is arranged opposite of the first surface is reduced; and - removing material from the second surface until the main diamond substrate is separated in a plurality of diamond substrates that correspond to the plurality of mesa structures.

The invention discloses a periodic defect-based low-dielectric-loss monocrystal diamond preparation method, which belongs to the field of semiconductors, and comprises the following steps: providing a diamond substrate; the diamond substrate is subjected to photoetching treatment, so that a dot matrix pattern is formed on the upper surface of the diamond substrate through photoetching, and the distance between every two adjacent dots in the dot matrix pattern is equal to the wavelength corresponding to the frequency of the external electric field; an etching process or an ion implantation process is adopted, the area where each point in the dot matrix pattern is located is damaged, a diamond damaged substrate is obtained, and the upper surface of the diamond damaged substrate is provided with a periodic defect dot matrix structure; growing a single crystal diamond layer with periodic defects on the upper surface of the diamond damaged substrate, and adjusting a growth process to enable the defects on the single crystal diamond layer to be line defects penetrating through the single crystal diamond layer; and carrying out fragmentation treatment on the damaged diamond substrate and the monocrystal diamond layer to obtain a monocrystal diamond finished product with periodic defects.

The present application relates to a kind of hydrogen terminal diamond / gallium oxide hetero integrated complementary devices and preparation method, CMOS inverter includes: diamond substrate layer, gallium oxide substrate layer, first source electrode, first drain electrode, first dielectric layer, first gate electrode, hydrogen terminal surface layer, second source electrode, second drain electrode, second dielectric layer and second gate electrode.The present application embodiment combines hydrogen terminal diamond PMOS and gallium oxide NMOS together by the method of hetero integration to prepare ultra-wide bandgap semiconductor CMOS device, effectively solves the key problem that diamond is difficult to realize n-type doping, gallium oxide is difficult to realize p-type doping, ensures the high performance of each device and overall high quality, realizes the high-performance ultra-wide bandgap semiconductor CMOS inverter suitable for ultra-high temperature, strong radiation environment application.

The application relates to a preparation method of diamond containing NV color centers and a quantum current sensor, and comprises the following steps: pretreating a diamond substrate; performing high-energy particle irradiation on the pretreated diamond substrate to introduce vacancies in a diamond lattice; placing the irradiated diamond substrate in a solution containing a nitrogen source to perform hydrothermal treatment; the solution containing the nitrogen source is a modified sodium azide solution to which sodium hydroxide is added; and performing annealing treatment on the hydrothermally treated diamond substrate in a protective atmosphere, so that the vacancies are combined with injected nitrogen atoms to form NV color centers, so as to obtain diamond containing NV color centers. The preparation method of diamond containing NV color centers and the quantum current sensor provided by the application have the advantages of high NV color center concentration and good uniformity.

This invention provides an anti-icing graphene component with electrothermal properties and its preparation method. The method involves: laser irradiating the surface of a diamond substrate to form several parallel graphite modules on the diamond substrate surface; mechanically cleaving the outer layer of the graphite modules to form a graphene layer in each graphite module, with the angle between the graphene sheets in the graphene layer and the diamond substrate surface being 30-40°; electrochemically exfoliating the graphene layer to reduce the angle between the graphene sheets in the graphene layer and the diamond substrate surface to 80-90°, forming a near-vertical graphene layer at the micro-nano scale; and finally, hydrophobic treatment to obtain the anti-icing graphene component with electrothermal properties. This invention, through a parallel electrothermal circuit composed of vertical graphene modules, effectively improves the electrothermal performance of the component, resulting in more uniform heating, a higher maximum steady-state temperature, and higher electrothermal conversion efficiency. Simultaneously, it possesses hydrophobic properties, better meeting the requirements of aircraft electrothermal anti-icing and de-icing.

A diamond substrate manufacturing method capable of reducing the loss amount when a single crystal diamond is processed into a diamond substrate. The diamond substrate manufacturing method includes: a step of arranging a laser condensing section (190) that condenses laser light (B) so as to face an upper surface (10a) of a single crystal diamond boule (10); a step of irradiating the laser light (B) from the laser condensing section (190) toward the upper surface (10a) of the boule (10), and forming a modified layer (20) including a graphite processing mark (21) and a crack (22) extending along a (111) plane of the single crystal diamond from the processing mark (21) to a prescribed depth from the upper surface (10a) of the boule (10) in a part of the boule (10); and a step of causing the cracking to spontaneously propagate to form a cracking surface (25) to a prescribed depth from the modified layer (20) to a remaining region of the upper surface (10a) of the boule (10).

The invention discloses a semiconductor heterogeneous integrated chip structure based on a diamond substrate and a preparation method thereof, and the structure comprises the diamond substrate, a contact electrode, a metal interconnection line, an inter-chip isolation medium, an inverted Si-based device, an inverted GaAs-based device, an inverted GaN-based device, a device isolation region and a source electrode back through hole connection layer which are sequentially arranged from bottom to top. And the inverted Si-based device, the inverted GaAs-based device and the inverted GaN-based device are isolated through the device isolation region. The heat dissipation performance of integrated chips made of different semiconductor materials can be improved, and the stability of the integrated chips can be improved. The semiconductor heterogeneous integrated chip structure based on the diamond substrate and the preparation method thereof can be widely applied to the technical field of semiconductor devices.

The application provides a graphene product with electrothermal performance and a preparation method, and the method comprises the following steps: performing laser irradiation treatment on the surface of a diamond substrate to form a high-orientation graphite layer on the surface of the diamond substrate; performing mechanical cleavage treatment on the outer layer of the high-orientation graphite layer to obtain a graphene layer formed by a plurality of graphene sheets, and the angle between the graphene sheets and the surface of the diamond substrate in the graphene layer is 30-40 degrees; and performing electrochemical exfoliation on the graphene layer, the pH of the electrolyte used in the electrochemical exfoliation is 9, the angle between the graphene sheets and the surface of the diamond substrate in the graphene layer is 80-90 degrees, a micro-nano scale nearly vertical graphene layer is formed, and the graphene product with electrothermal performance is obtained. The application also provides the product prepared by the above method. Compared with the prior art, the application can directly generate electrothermal graphene on the surface of the diamond in situ, and not only omits complex process steps such as reduction, but also has a service life far longer than that of ordinary graphene film electrothermal elements and excellent electrothermal performance.

This invention provides a diamond-3C-SiC heterostructure and its fabrication method, relating to the technical field of wide-bandgap semiconductor fabrication. The diamond-3C-SiC heterostructure comprises, from bottom to top, a 0.5-1.0 mm thick diamond substrate, a 5-10 nm thick SiC transition layer, a 2-5 nm thick single-crystal silicon transition layer, and a 5-10 μm thick 3C-SiC layer. This invention utilizes an innovative "magnetron sputtering silicon layer + in-situ solid-state reactive annealing" process to construct a composite transition layer on the diamond surface consisting of an "in-situ reactive SiC layer + recrystallized silicon layer." This transition layer achieves a "gradual buffer" from diamond to 3C-SiC in terms of chemical bonding and crystal structure, significantly reducing interface energy and effectively relaxing mismatch stress. This lays a reliable interface foundation for subsequently obtaining a single-crystal 3C-SiC epitaxial layer with low defect density and high crystallinity, overcoming a core obstacle in heterogeneous integration.

The present application relates to a kind of diamond-based gallium oxide heterojunction avalanche photodetector and its preparation method, adopt p + Diamond substrate, sequentially epitaxial p ‑ Diamond multiplication layer, n ‑ Ga2O3 charge layer, i-Ga2O3 absorption layer and n + Ga2O3 contact layer, form separate absorption multiplication II-type heterojunction mesa structure;Through ICP etching exposure substrate, and utilize BOE wet etching and nitrogen annealing repair side wall damage;Finally, ohmic contact electrode is formed at top and bottom respectively.Under reverse bias, heterojunction built-in electric field and mesa edge local electric field cooperate, realize carrier avalanche multiplication, can realize single-photon level detection to ≤280nm solar blind waveband.Diamond substrate high thermal conductivity significantly inhibits Ga2O3 thermal accumulation, improves device stability and life.Process is fully compatible with MPCVD / MOCVD and standard semiconductor process, applicable to deep ultraviolet weak light imaging and other fields.

This application relates to a method for fabricating an all-diamond-based microfluidic chip with integrated NV color center nanostructures and the microfluidic chip itself. The method includes: firstly, forming a substrate containing NV color centers on the surface of a single-crystal diamond substrate; then, fabricating a metal mask layer in a target area on the substrate surface; next, etching the target area of ​​the substrate to transfer the pattern of the metal mask layer to the substrate, forming multiple nanopillars; finally, according to preset first growth parameters, growing a repair layer on the top surface and sidewalls of each nanopillar through chemical vapor deposition, and according to preset second growth parameters, laterally epitaxially growing a capping layer on the top surface of each nanopillar through chemical vapor deposition, the capping layer merging with the non-target area of ​​the substrate to form a closed structure, thus forming the microfluidic chip; the channels in the microfluidic chip are the gaps between the multiple nanopillars. This eliminates the need for adhesive bonding to seal the chip, improving its sealing performance and effectively preventing leakage.