The invention relates to a microwave plasma chemical vapor deposition device, which comprises a casing, a microwave input port is arranged on the upper surface of the casing, a substrate is arranged below the microwave input port, a loop antenna is arranged on the bottom surface of the substrate, and the connection between the substrate and the casing is A tubular microwave window made of microwave dielectric material is arranged in between, and a deposition platform is provided at the bottom of the shell, which is located below the loop antenna, and the deposition platform can move up and down driven by the first lifting device, and the deposition platform A plasma stabilizing ring with a tubular structure is arranged on the outer surface, and a closed resonant cavity is formed surrounded by the deposition table, the plasma stabilizing ring, the shell, the tubular microwave window and the substrate. The microwave plasma chemical vapor deposition device of the invention has the advantages of simple structure, low processing cost, high production efficiency and high quality of finished products. In addition, the present invention also designs the production method of the microwave plasma chemical vapor deposition device.