165 results about "Vacuum electronics" patented technology

The invention provides an ultrathin-wall niobium-tungsten alloy and titanium alloy dissimilar metal electron beam welding method which comprises the following steps: step 1, cleaning the to-be-welded parts of niobium-tungsten alloy and titanium alloy by using absolute ethyl alcohol, and then drying; step 2, assembling; the niobium-tungsten alloy and the titanium alloy part are in butt joint and fixed; 3, vacuum electron beam welding is used for positioned welding; and 4, formal welding is conducted. After welding, the surface of a welding seam is formed well, good metallurgical fusion is achieved, and the welding seam welded through a vacuum electron beam meets the QJ 20622-2016 I-level standard; under the room temperature condition, the tensile strength of the welding seam reaches 80% of that of titanium alloy base metal; a hydraulic strength test is carried out on a welding seam, and the welding seam is free of leakage and deformation when the pressure is maintained for 5 minutes under 4.1 MPa. An airtight test is carried out on a welding seam, the requirement that air leakage is avoided under the pressure of 3 MPa for 5 min is met, and the design structure size is promoted to continuously break through in the miniaturization and precision direction.

The utility model relates to the technical field of vacuum electronics, in particular to a trapezoidal staggered gate slow-wave structure of a circular electron beam channel, which comprises a metal shell, trapezoidal upper metal gates and trapezoidal lower metal gates which are symmetrically arranged in a staggered manner are arranged in the metal shell, and the upper metal gates and the lower metal gates are respectively provided with arc-shaped concave holes; along the electron transmission direction, the concave holes respectively penetrate through the upper metal gate and the lower metal gate, and the upper and lower concave holes are enclosed to form a circular electron beam channel. Through the slow-wave structure, the bandwidth of the slow-wave structure can be increased, so that the longitudinal electric field in the slow-wave structure is enhanced.

A field emission (FE) cathode for a vacuum electronic device (VED) includes a graphite substrate or framework in the shape of a hollow cylinder, and at least one continuous carbon nanotube (CNT) fiber in tension or compression around at least a portion of the graphite substrate. The at least one continuous CNT fiber can include a filament, yarn, braided yarn, film, fabric, or combination thereof. The at least one continuous CNT fiber is secured to the electrically conductive substrate by vacuum brazing or any other suitable means.

This invention relates to a method for simultaneously producing single-sided and double-sided stainless steel composite plates, comprising steps such as billet preparation, billet processing, application of release agent, spot welding assembly of composite materials, surface treatment of the composite billet, alignment of the assembly, vacuum electron beam welding, defect repair welding, heating of the composite billet, and rolling of the composite billet. This invention, through vacuum welding and heated rolling of double-layer sandwich plates, enables the simultaneous production of both single-sided and double-sided stainless steel composite plates from a single set of composite billets. The rolled stainless steel composite plates exhibit satisfactory flaw detection results, with performance far exceeding user requirements. Furthermore, it allows for mass production and industrialization, providing strong technical support for the stable production of single-sided / double-sided stainless steel composite plates.

The utility model relates to the technical field of vacuum electronic tubes, in particular to a vacuum electronic tube accurate grinding device which comprises a base, a clamping assembly and an accurate grinding assembly are arranged at the top of the base, the clamping assembly comprises a U-shaped plate, a bidirectional lead screw is rotationally connected to the inner side of the U-shaped plate, and two moving blocks are connected to the bidirectional lead screw in a threaded mode. Connecting vertical plates are arranged at the bottoms of the two moving blocks, detachable arc-shaped clamping plates are arranged at the positions, close to the bottoms, of the opposite side faces of the two connecting vertical plates, and rubber linings are arranged on the concave faces of the arc-shaped clamping plates. According to the fine grinding device for the vacuum electronic tube, the clamping assembly is arranged, and the rubber lining is arranged on the arc-shaped clamping plate, so that stable clamping of the vacuum tube body in the grinding process is ensured, and the situation that the grinding precision is reduced due to displacement is avoided. And the concave surface of the rubber lining is tightly attached to the outer wall of the vacuum tube body, so that the friction force is increased, and the clamping stability is further improved.

This application provides a temperature control method and system for vacuum wetting indium in an array field emitter, relating to the field of vacuum electronic device manufacturing technology. The method includes: obtaining the three-dimensional temperature field distribution of the surface of the field emitter using a deep convolutional neural network based on spectral radiation energy; calculating the transverse and longitudinal temperature gradients between the emitter pins based on this distribution data, and inputting this data into an evaluation model to dynamically assess the wetting uniformity; and generating multi-temperature zone heating power control commands based on the uniformity results using a proportional-integral-derivative controller, and adjusting the power output of each temperature zone to ensure the array temperature field meets the requirements for promoting uniform indium wetting. This application improves the control accuracy and reliability of indium wetting uniformity in complex three-dimensional field emitters under vacuum and high-temperature conditions.

The invention belongs to the technical field of vacuum electronic devices, and particularly relates to a dynode with an edge expansion type inner substrate and an electron multiplier comprising the dynode. The dynode comprises a grid mesh assembly, a base frame box and an edge expansion type inner substrate, and the inner substrate is located in the base frame box. The lining bottom comprises an arc-shaped side wall part, an upper wall, a lower wall and a bent part; the bent parts are arranged between the arc-shaped side wall part and the upper wall and between the arc-shaped side wall and the lower wall; the base frame box comprises a side wall, and an upper baffle and a lower baffle which are connected with the side wall; the arc-shaped side wall part of the lining bottom is attached to the side wall of the base frame box, the upper wall of the lining bottom is tightly attached to the upper baffle of the base frame box, and the lower wall of the lining bottom is tightly attached to the lower baffle of the base frame box. The inner substrate structure enables the electric field in the dynode to change, and especially the electric field intensity at the corners in the dynode, namely the area where the bent part is located, is obviously changed. The problem of low dynode electron collection efficiency is solved, and the gain of the electron multiplier is improved.

1. The name of the design product: hollow cathode. 2. The use of the design product: electron emission device used in vacuum electronic equipment, suitable for ion source, plasma generating equipment and other scenes. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

Vacuum electron devices (VEDs) are produced having a plurality of two-dimensional layers of various materials that are bonded together to form one or more VEDs simultaneously. The two-dimensional material layers are machined to include features needed for device operation so that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together using brazing, diffusion bonding, assisted diffusion bonding, solid state bonding, cold welding, ultrasonic welding, and the like. The manufacturing process enables incorporation of metallic, magnetic, and ceramic materials required for VED fabrication while maintaining required positional accuracy and multiple devices per batch capability. The VEDs so produced include a combination of magnetic and electrostatic lenses for electron beam control.

The invention discloses a full-wave-band high-reflectivity metal composite film structure and a preparation method thereof, and relates to the technical field of semiconductor light-emitting elements. The metal composite film structure is applied to a light-emitting element, light enters from one side of an adhesion layer of the metal composite film structure, and the metal composite film structure at least comprises the adhesion layer with the thickness ranging from 0.5 nm to 2.5 nm; the composite reflecting layer is arranged on the adhesion layer, and the composite reflecting layer is of a stacked structure of a silver layer and an aluminum layer, or is a silver-aluminum alloy layer. The invention further discloses a preparation method of the structure, a vacuum electron beam evaporation process is adopted, when the composite reflecting layer is deposited, the evaporation rate is controlled to be 1-15 angstroms per second, and cavity heating at the temperature of 40-70 DEG C is supplemented. The invention preferably also comprises a double-layer protection structure consisting of atomic layer deposited aluminum oxide and chemical vapor deposited silicon dioxide. According to the invention, the problems of low reflectivity, narrow wave band, contradiction between adhesive force and reflectivity, high-cost sputtering process damage and the like of a traditional reflector are solved, and the advantages of full-wave band high reflectivity, high adhesive force, high reliability, low cost and low damage preparation are realized.

The invention discloses a method for preparing an internal tin method Nb3Sn superconducting material by using a sol-gel method, which comprises the following steps: preparing Nb / Sn gel by using the sol-gel method, and drying and pre-sintering the Nb / Sn gel to obtain Nb / Sn / O mixed powder; uniformly mixing the Nb / Sn / O mixed powder with Sn powder and Y powder to obtain Nb / Sn / O / Sn / Y mixed powder; loading the Nb / Sn / O / Sn / Y mixed powder into a barrier tube, and then loading the barrier tube into an oxygen-free copper tube to obtain a component; the components are densely arranged and loaded into an oxygen-free copper sheath, gaps are filled with oxygen-free copper rods in an inserted mode, and an Nb / Sn / O / Cu / Y composite ingot is obtained; and adding copper covers at the two ends of the Nb / Sn / O / Cu / Y composite ingot, and performing vacuum electron beam seal welding, extrusion and multi-pass drawing to obtain the Nb3Sn superconducting material. According to the prepared Nb3Sn superconducting material, the grain size of the Nb3Sn superconducting phase is smaller, and the structure is more stable.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

This invention relates to the field of vacuum electronics technology, specifically to a high-power capacity gyrotron collector structure. It includes a nonlinear interaction section, after which multiple segmented units are coaxially connected. Each segmented unit includes an output mode transition or output mode converter and a collector uniformity section. An electron beam channel and a microwave transmission channel are formed within the nonlinear interaction section and the segmented units. The ends of the electron beam channel and microwave transmission channel have an output window. The nonlinear interaction section, the multiple segmented units, and the output window cause microwaves to undergo a series of reflections, resulting in phase superposition and cancellation. This invention, while maintaining the output window parameters, significantly reduces the number of secondary and reflected electrons impacting the output window, thereby effectively improving the power capacity of the structure. This structure has the advantages of convenient fabrication and simple process implementation. This invention can be used in all high-power gyrotrons with axial output modes.

The invention relates to the technical field of vacuum electronics, and discloses a large-radius spiral waveguide slow wave device (including a traveling wave tube and a backward wave tube). The high-frequency structure of the novel slow-wave device is a two-dimensional periodic slow-wave structure formed by spirally winding a rectangular waveguide along a large-radius cylindrical surface. The transverse size of an electron beam channel can be greatly increased by increasing the spiral radius, so that higher injection electron beam power (under the same current density) is provided, and the output power is greatly improved. Compared with an existing slow-wave device, the large-radius spiral waveguide slow-wave device has the advantages that the output power can be greatly improved (in magnitude), and the bottleneck that the power of an existing vacuum electronic slow-wave device is limited can be broken through.

This application provides a simulation system and method for the AC characteristics of vacuum diodes based on a physical information neural network, belonging to the field of numerical simulation technology for electronic devices. The system includes a particle injection module, a particle deposition module, a Poisson equation solving module, an electric field calculation module, and a particle propulsion module. The particle injection module continuously injects electron particles; the particle deposition module maps particle information to a grid and calculates the electron density; the Poisson equation solving module uses a physical information neural network method to solve for the potential distribution based on the electron density; the electric field calculation module obtains the spatial electric field; and the particle propulsion module updates the particle velocity and position, forming a self-consistent coupled simulation. This application achieves continuous and smooth potential solutions through hard constraint embedding of boundary conditions, two-stage optimization, and loss scale adjustment mechanisms, reducing grid dependence and improving computational accuracy and efficiency. It is suitable for numerical simulation of vacuum electronic devices, electron beam systems, and space charge transport problems.

The invention provides a method, a device and equipment for realizing miniaturization of an electronic optical system of a klystron, which can be applied to the technical field of vacuum electronic devices. The method for realizing miniaturization of the electron optical system of the klystron comprises the following steps: acquiring a first target parameter of an electron gun and an initial permanent magnet focusing system; according to the first magnetic induction intensity, the magnetic induction intensity area range of the initial permanent magnet focusing system is adjusted, and a first magnetic induction intensity curve is obtained; adjusting the initial structure parameters by simulating a working state of embedding an electron gun corresponding to the initial structure parameters into the middle permanent magnet focusing system to obtain a second magnetic induction intensity curve; and embedding the electron gun corresponding to the target structure parameter corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulation tube.

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.

The invention discloses a method for preparing an ultra-high-purity invar alloy cast ingot based on forging diameter changing. The method comprises the following steps that firstly, a cast ingot is formed through vacuum electron beam melting; secondly, forging and diameter changing are conducted; according to the method, vacuum electron beam cold bed smelting, forging diameter changing and vacuum consumable remelting form a short continuous process, the prepared and formed invar alloy ingot has the advantages of being large in size, high in purity and grain size, uniform and compact in structure, few in defect and the like by optimizing parameters, and the short continuous process has the advantages of reducing the cost, improving the production efficiency and the like at the same time. And the efficiency is improved.

The application discloses a vacuum electron beam welding method of a heterogeneous metal electromagnet blank, and the sleeve ring, the magnetic conducting ring, the magnetic shielding ring and the stop iron are assembled into an integrated whole through design of a welding mandrel and a welding clamp, three welding seams are designed, and welding of each component is completed by adopting different welding sequences; the scheme ensures that there are no defects such as cracks and incomplete fusion in the welding seam of the heterogeneous metal electromagnet blank, meets the requirements of a first-grade welding seam of a relevant standard, simultaneously improves the welding deformation of the electromagnet blank, and ensures that the coaxiality of the electromagnet blank after welding meets the subsequent machining requirements.

This invention belongs to the field of vacuum electronic device control technology, specifically relating to a closed-loop control method and system for the internal gas pressure of a neutron tube. The method includes the following steps: S1, constructing a multi-dimensional parameter synchronous acquisition and preprocessing link, establishing a high-frequency synchronous acquisition mechanism, and acquiring the real-time operating status parameters of the neutron tube system, including ion source current, anode high voltage, and tube temperature; S2, performing soft measurement of the actual gas pressure based on the Penning discharge equation, constructing a decoupled observer based on the real-time operating status parameters, eliminating the interference of anode high voltage fluctuations and tube temperature changes on the ion source current, and calculating the actual observed gas pressure value inside the neutron tube. This invention achieves rapid gas pressure response with no overshoot throughout, significantly reducing the risk of neutron tube high-voltage breakdown and ensuring consistent control across the entire temperature range.

The present application relates to the technical field of vacuum electronic products, in particular to a traveling wave tube process digital management system capable of data feedback and problem tracing. The present application realizes the structured storage, full-process tracking and information recording of the full production process data of the traveling wave tube and parts; supports data feedback, realizes the production actual measurement data feedback linkage simulation design system, the simulation design system analyzes the actual production data to correct the simulation model, and improves the simulation model accuracy; supports problem tracing, automatically compares the test system actual measurement results with the simulation design results to analyze the differences, and then the problem tracing database finds the possible reasons and process positioning to accurately predict the product performance, realizes the rapid identification of the traveling wave tube development process technical bottleneck, provides support for the traveling wave tube new product development, so as to ensure that the traveling wave tube products and parts can be delivered with high quality, high standard and on time.

The extreme ultraviolet (EUV) light source device provided by this invention includes: a discharge cavity maintained under vacuum; an electron beam emitting unit located inside the discharge cavity and used to generate an electron beam; and a metal radiator located inside the discharge cavity and ionized by the electron beam. EUV radiation is achieved in the plasma generated by the metal radiator. The electron beam emitting unit includes: a cathode electrode; multiple emitters located on the cathode electrode and comprising a carbon-based material; and a gate electrode spaced apart from the multiple emitters and located on the multiple emitters, to which a pulsed voltage is applied.

A magnet array holder configured to retain magnet pieces and / or non-magnet pieces to form a magnet array, the magnet array configured to manipulate one or more electron beams in a vacuum electronic device when assembled, the magnet array holder comprising a set of slots configured to receive magnet and / or non-magnet pieces; a set of pockets to receive magnet and / or non-magnet pieces; and one or more attachment interfaces configured to couple the magnet array holder to a vacuum electronic device.

The application provides a kind of vacuum electronic pump parts semi-automatic assembly detection machine, it is related to the field of automobile parts processing equipment, the vacuum electronic pump parts semi-automatic assembly detection machine is set up and is placed box, cylinder and fixed assembly, and is placed box is used to transport stator, and stator is covered outside rotor, instead of traditional manual placement mode, to speed up the electronic pump assembly speed, laser detector is set up at the bottom of cylinder, and the vertex of inner wall of stator is detected by laser, whether the vertex of inner wall of stator touches laser is judged, whether the deviation exists in the placement position of stator, cross bar, the central place of the placed box is provided with the through conveying channel.The vacuum electronic pump parts semi-automatic assembly detection machine, exhaust disc, stator is placed on electronic pump body, stator is covered outside rotor, exhaust disc is covered on stator, including base, there is a center hole in the central top of base, the lower end of electronic pump body is inserted into the central hole of base, and the placed box and cylinder are slidably connected above the base.

The invention relates to a preparation method and application of high-purity vanadium, and the preparation method comprises the following steps: 1) carrying out hydrotreating on a metal vanadium raw material at 300-700 DEG C to induce grain boundary cracks; 2) pickling the hydrotreated raw material to remove Fe and Cr metal impurities at the grain boundary; 3) drying the pickled raw materials at a drying temperature of 80-150 DEG C; and (4) the dried anhydrous raw material is subjected to high-vacuum electron beam melting, O and N interstitial impurities in vanadium are removed through hydrogen cooperation, Fe and Cr metal impurities in vanadium are deeply removed, and a high-purity metal vanadium ingot is obtained. According to the method, representative metal impurity iron and interstitial element oxygen in high-purity vanadium are effectively removed, and a novel hydrogenation-acid pickling-hydrogen synergistic EB smelting coupling technology is provided and used for preparing high-purity vanadium raw materials and vanadium ingots so as to meet the requirements of the fields of magnetron sputtering target materials and the like for high-purity metal.

The invention provides a scandate active material with high Sc2O3 content and application thereof in an impregnated diffusion cathode, and belongs to the technical field of manufacturing of thermal diffusion cathodes for vacuum electronic devices, and the scandate active material is obtained by mixing BaCO3, CaCO3, Al2O3 and Sc2O3 according to a molar ratio of 12: 2: 3: 1, grinding, pressing into a sheet, heating to 1100-1150 DEG C in air, sintering for 24-48 hours, cooling and grinding. By optimizing the proportion of the components, the scandate active substance with the Sc2O3 mole percentage exceeding 5.5% is obtained, and the scandate active substance does not contain an ineffective active substance BaAl2O4, so that the emission performance of the impregnated diffusion cathode is improved; the composite material is applied to an impregnated diffusion cathode, and cathode surface modification treatment is carried out in combination with a surface etching technology, so that pore blockage caused by mechanical polishing or processing is effectively eliminated, and synchronous improvement of cathode emission current density and working stability is realized.

The embodiment of the invention provides a vacuum electron tube, a radio frequency module and communication equipment, and relates to the technical field of vacuum electron tubes. The vacuum electron tube comprises a metal shell and a sealing cover plate. The sealing cover plate is connected to the metal shell in a covering mode, the sealing cover plate and the metal shell are used for defining a vacuum cavity, and an energy conversion structure is arranged in the vacuum cavity. Wherein the sealing cover plate comprises a dielectric layer structure and a metal layer structure, the metal layer structure forms a signal transmission structure, and the signal transmission structure is coupled with the transduction structure. And the signal transmission structure is used for inputting a radio frequency signal outside the vacuum cavity into the transduction structure, or the signal transmission structure is used for outputting the radio frequency signal processed by the transduction structure from the vacuum cavity. Therefore, the assembly of the vacuum electronic tube can be simpler, and the refinement and consistency of the vacuum electronic tube can be improved.

This invention discloses a high-resistivity NdFeB permanent magnet material and its high-throughput preparation method. Specifically, the method includes: preparing a metal cladding of suitable size; assembling NdFeB, NdDyTbFeB metal strips and rare-earth alloy diffusion source strips into grooves within the metal cladding using an alternating arrangement of the metal strips and diffusion source strips; performing vacuum electron beam welding and hot isostatic pressing; slicing and sealing the resulting multi-element section before heat treatment; and finally, screening to obtain the high-resistivity NdFeB permanent magnet material. This invention, based on a high-throughput preparation method for diffusion multi-element sections, can obtain a large number of parallel samples in a short time. Combined with high-throughput testing and characterization methods, it allows for rapid screening of suitable diffusion sources and heat treatment temperatures, enabling efficient development of high-resistivity NdFeB permanent magnet materials.

The utility model relates to the technical field of vacuum electronic tubes, in particular to a vacuum packaging device of a vacuum electronic tube, which comprises a working table, a vacuumizing tube arranged at the top of the working table, a plurality of first L-shaped gas-guide tubes arranged on the outer wall of the vacuumizing tube, a vacuum butt-joint tube arranged at the top ends of the first L-shaped gas-guide tubes, and a plurality of quick cooling pieces arranged at the top of the working table. The rapid cooling part comprises a circular base, two supporting rods are arranged at the top of the circular base, the top ends of the two supporting rods are jointly connected with an annular gas guide pipe, the top end of the first L-shaped gas guide pipe penetrates through the annular gas guide pipe, and a plurality of gas outlet inclined pipes are arranged at the top of the annular gas guide pipe. According to the vacuum packaging equipment of the vacuum electronic tube, long-time waiting needed by a traditional natural cooling mode is avoided by introducing the rapid cooling piece, the rapid cooling piece can rapidly cool a fusion welding part immediately after fusion welding is completed, the waiting time in the production process is greatly shortened, and the efficiency of a production line and the overall output are remarkably improved.