100 results about "Vacuum electronics" patented technology

The invention provides an ultrathin-wall niobium-tungsten alloy and titanium alloy dissimilar metal electron beam welding method which comprises the following steps: step 1, cleaning the to-be-welded parts of niobium-tungsten alloy and titanium alloy by using absolute ethyl alcohol, and then drying; step 2, assembling; the niobium-tungsten alloy and the titanium alloy part are in butt joint and fixed; 3, vacuum electron beam welding is used for positioned welding; and 4, formal welding is conducted. After welding, the surface of a welding seam is formed well, good metallurgical fusion is achieved, and the welding seam welded through a vacuum electron beam meets the QJ 20622-2016 I-level standard; under the room temperature condition, the tensile strength of the welding seam reaches 80% of that of titanium alloy base metal; a hydraulic strength test is carried out on a welding seam, and the welding seam is free of leakage and deformation when the pressure is maintained for 5 minutes under 4.1 MPa. An airtight test is carried out on a welding seam, the requirement that air leakage is avoided under the pressure of 3 MPa for 5 min is met, and the design structure size is promoted to continuously break through in the miniaturization and precision direction.

The utility model relates to the technical field of vacuum electronics, in particular to a trapezoidal staggered gate slow-wave structure of a circular electron beam channel, which comprises a metal shell, trapezoidal upper metal gates and trapezoidal lower metal gates which are symmetrically arranged in a staggered manner are arranged in the metal shell, and the upper metal gates and the lower metal gates are respectively provided with arc-shaped concave holes; along the electron transmission direction, the concave holes respectively penetrate through the upper metal gate and the lower metal gate, and the upper and lower concave holes are enclosed to form a circular electron beam channel. Through the slow-wave structure, the bandwidth of the slow-wave structure can be increased, so that the longitudinal electric field in the slow-wave structure is enhanced.

This invention relates to a method for simultaneously producing single-sided and double-sided stainless steel composite plates, comprising steps such as billet preparation, billet processing, application of release agent, spot welding assembly of composite materials, surface treatment of the composite billet, alignment of the assembly, vacuum electron beam welding, defect repair welding, heating of the composite billet, and rolling of the composite billet. This invention, through vacuum welding and heated rolling of double-layer sandwich plates, enables the simultaneous production of both single-sided and double-sided stainless steel composite plates from a single set of composite billets. The rolled stainless steel composite plates exhibit satisfactory flaw detection results, with performance far exceeding user requirements. Furthermore, it allows for mass production and industrialization, providing strong technical support for the stable production of single-sided / double-sided stainless steel composite plates.

This application provides a temperature control method and system for vacuum wetting indium in an array field emitter, relating to the field of vacuum electronic device manufacturing technology. The method includes: obtaining the three-dimensional temperature field distribution of the surface of the field emitter using a deep convolutional neural network based on spectral radiation energy; calculating the transverse and longitudinal temperature gradients between the emitter pins based on this distribution data, and inputting this data into an evaluation model to dynamically assess the wetting uniformity; and generating multi-temperature zone heating power control commands based on the uniformity results using a proportional-integral-derivative controller, and adjusting the power output of each temperature zone to ensure the array temperature field meets the requirements for promoting uniform indium wetting. This application improves the control accuracy and reliability of indium wetting uniformity in complex three-dimensional field emitters under vacuum and high-temperature conditions.

1. The name of the design product: hollow cathode. 2. The use of the design product: electron emission device used in vacuum electronic equipment, suitable for ion source, plasma generating equipment and other scenes. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The invention discloses a full-wave-band high-reflectivity metal composite film structure and a preparation method thereof, and relates to the technical field of semiconductor light-emitting elements. The metal composite film structure is applied to a light-emitting element, light enters from one side of an adhesion layer of the metal composite film structure, and the metal composite film structure at least comprises the adhesion layer with the thickness ranging from 0.5 nm to 2.5 nm; the composite reflecting layer is arranged on the adhesion layer, and the composite reflecting layer is of a stacked structure of a silver layer and an aluminum layer, or is a silver-aluminum alloy layer. The invention further discloses a preparation method of the structure, a vacuum electron beam evaporation process is adopted, when the composite reflecting layer is deposited, the evaporation rate is controlled to be 1-15 angstroms per second, and cavity heating at the temperature of 40-70 DEG C is supplemented. The invention preferably also comprises a double-layer protection structure consisting of atomic layer deposited aluminum oxide and chemical vapor deposited silicon dioxide. According to the invention, the problems of low reflectivity, narrow wave band, contradiction between adhesive force and reflectivity, high-cost sputtering process damage and the like of a traditional reflector are solved, and the advantages of full-wave band high reflectivity, high adhesive force, high reliability, low cost and low damage preparation are realized.

The invention discloses a method for preparing an internal tin method Nb3Sn superconducting material by using a sol-gel method, which comprises the following steps: preparing Nb / Sn gel by using the sol-gel method, and drying and pre-sintering the Nb / Sn gel to obtain Nb / Sn / O mixed powder; uniformly mixing the Nb / Sn / O mixed powder with Sn powder and Y powder to obtain Nb / Sn / O / Sn / Y mixed powder; loading the Nb / Sn / O / Sn / Y mixed powder into a barrier tube, and then loading the barrier tube into an oxygen-free copper tube to obtain a component; the components are densely arranged and loaded into an oxygen-free copper sheath, gaps are filled with oxygen-free copper rods in an inserted mode, and an Nb / Sn / O / Cu / Y composite ingot is obtained; and adding copper covers at the two ends of the Nb / Sn / O / Cu / Y composite ingot, and performing vacuum electron beam seal welding, extrusion and multi-pass drawing to obtain the Nb3Sn superconducting material. According to the prepared Nb3Sn superconducting material, the grain size of the Nb3Sn superconducting phase is smaller, and the structure is more stable.

The invention discloses a hot cathode for a vacuum device and a preparation method and application of the hot cathode. The structure of the hot cathode comprises a cathode substrate and an emission active material combined on the cathode substrate; wherein the cathode substrate is of a porous structure, and the cathode substrate is made of a mixture of chromic oxide and tungsten; and the emission active material is scandium-containing barium aluminate. According to the scheme, the problem that the requirement of a current high-power vacuum electronic device for a low-working-temperature and high-emission-current-density electron source cannot be met is well solved.

The invention relates to the technical field of vacuum electronics, and discloses a large-radius spiral waveguide slow wave device (including a traveling wave tube and a backward wave tube). The high-frequency structure of the novel slow-wave device is a two-dimensional periodic slow-wave structure formed by spirally winding a rectangular waveguide along a large-radius cylindrical surface. The transverse size of an electron beam channel can be greatly increased by increasing the spiral radius, so that higher injection electron beam power (under the same current density) is provided, and the output power is greatly improved. Compared with an existing slow-wave device, the large-radius spiral waveguide slow-wave device has the advantages that the output power can be greatly improved (in magnitude), and the bottleneck that the power of an existing vacuum electronic slow-wave device is limited can be broken through.

This application provides a simulation system and method for the AC characteristics of vacuum diodes based on a physical information neural network, belonging to the field of numerical simulation technology for electronic devices. The system includes a particle injection module, a particle deposition module, a Poisson equation solving module, an electric field calculation module, and a particle propulsion module. The particle injection module continuously injects electron particles; the particle deposition module maps particle information to a grid and calculates the electron density; the Poisson equation solving module uses a physical information neural network method to solve for the potential distribution based on the electron density; the electric field calculation module obtains the spatial electric field; and the particle propulsion module updates the particle velocity and position, forming a self-consistent coupled simulation. This application achieves continuous and smooth potential solutions through hard constraint embedding of boundary conditions, two-stage optimization, and loss scale adjustment mechanisms, reducing grid dependence and improving computational accuracy and efficiency. It is suitable for numerical simulation of vacuum electronic devices, electron beam systems, and space charge transport problems.

The invention provides a method, a device and equipment for realizing miniaturization of an electronic optical system of a klystron, which can be applied to the technical field of vacuum electronic devices. The method for realizing miniaturization of the electron optical system of the klystron comprises the following steps: acquiring a first target parameter of an electron gun and an initial permanent magnet focusing system; according to the first magnetic induction intensity, the magnetic induction intensity area range of the initial permanent magnet focusing system is adjusted, and a first magnetic induction intensity curve is obtained; adjusting the initial structure parameters by simulating a working state of embedding an electron gun corresponding to the initial structure parameters into the middle permanent magnet focusing system to obtain a second magnetic induction intensity curve; and embedding the electron gun corresponding to the target structure parameter corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulation tube.

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.

The invention discloses a method for preparing an ultra-high-purity invar alloy cast ingot based on forging diameter changing. The method comprises the following steps that firstly, a cast ingot is formed through vacuum electron beam melting; secondly, forging and diameter changing are conducted; according to the method, vacuum electron beam cold bed smelting, forging diameter changing and vacuum consumable remelting form a short continuous process, the prepared and formed invar alloy ingot has the advantages of being large in size, high in purity and grain size, uniform and compact in structure, few in defect and the like by optimizing parameters, and the short continuous process has the advantages of reducing the cost, improving the production efficiency and the like at the same time. And the efficiency is improved.

The application discloses a vacuum electron beam welding method of a heterogeneous metal electromagnet blank, and the sleeve ring, the magnetic conducting ring, the magnetic shielding ring and the stop iron are assembled into an integrated whole through design of a welding mandrel and a welding clamp, three welding seams are designed, and welding of each component is completed by adopting different welding sequences; the scheme ensures that there are no defects such as cracks and incomplete fusion in the welding seam of the heterogeneous metal electromagnet blank, meets the requirements of a first-grade welding seam of a relevant standard, simultaneously improves the welding deformation of the electromagnet blank, and ensures that the coaxiality of the electromagnet blank after welding meets the subsequent machining requirements.

This invention belongs to the field of vacuum electronic device control technology, specifically relating to a closed-loop control method and system for the internal gas pressure of a neutron tube. The method includes the following steps: S1, constructing a multi-dimensional parameter synchronous acquisition and preprocessing link, establishing a high-frequency synchronous acquisition mechanism, and acquiring the real-time operating status parameters of the neutron tube system, including ion source current, anode high voltage, and tube temperature; S2, performing soft measurement of the actual gas pressure based on the Penning discharge equation, constructing a decoupled observer based on the real-time operating status parameters, eliminating the interference of anode high voltage fluctuations and tube temperature changes on the ion source current, and calculating the actual observed gas pressure value inside the neutron tube. This invention achieves rapid gas pressure response with no overshoot throughout, significantly reducing the risk of neutron tube high-voltage breakdown and ensuring consistent control across the entire temperature range.

The extreme ultraviolet (EUV) light source device provided by this invention includes: a discharge cavity maintained under vacuum; an electron beam emitting unit located inside the discharge cavity and used to generate an electron beam; and a metal radiator located inside the discharge cavity and ionized by the electron beam. EUV radiation is achieved in the plasma generated by the metal radiator. The electron beam emitting unit includes: a cathode electrode; multiple emitters located on the cathode electrode and comprising a carbon-based material; and a gate electrode spaced apart from the multiple emitters and located on the multiple emitters, to which a pulsed voltage is applied.

A magnet array holder configured to retain magnet pieces and / or non-magnet pieces to form a magnet array, the magnet array configured to manipulate one or more electron beams in a vacuum electronic device when assembled, the magnet array holder comprising a set of slots configured to receive magnet and / or non-magnet pieces; a set of pockets to receive magnet and / or non-magnet pieces; and one or more attachment interfaces configured to couple the magnet array holder to a vacuum electronic device.

The invention provides a scandate active material with high Sc2O3 content and application thereof in an impregnated diffusion cathode, and belongs to the technical field of manufacturing of thermal diffusion cathodes for vacuum electronic devices, and the scandate active material is obtained by mixing BaCO3, CaCO3, Al2O3 and Sc2O3 according to a molar ratio of 12: 2: 3: 1, grinding, pressing into a sheet, heating to 1100-1150 DEG C in air, sintering for 24-48 hours, cooling and grinding. By optimizing the proportion of the components, the scandate active substance with the Sc2O3 mole percentage exceeding 5.5% is obtained, and the scandate active substance does not contain an ineffective active substance BaAl2O4, so that the emission performance of the impregnated diffusion cathode is improved; the composite material is applied to an impregnated diffusion cathode, and cathode surface modification treatment is carried out in combination with a surface etching technology, so that pore blockage caused by mechanical polishing or processing is effectively eliminated, and synchronous improvement of cathode emission current density and working stability is realized.

The embodiment of the invention provides a vacuum electron tube, a radio frequency module and communication equipment, and relates to the technical field of vacuum electron tubes. The vacuum electron tube comprises a metal shell and a sealing cover plate. The sealing cover plate is connected to the metal shell in a covering mode, the sealing cover plate and the metal shell are used for defining a vacuum cavity, and an energy conversion structure is arranged in the vacuum cavity. Wherein the sealing cover plate comprises a dielectric layer structure and a metal layer structure, the metal layer structure forms a signal transmission structure, and the signal transmission structure is coupled with the transduction structure. And the signal transmission structure is used for inputting a radio frequency signal outside the vacuum cavity into the transduction structure, or the signal transmission structure is used for outputting the radio frequency signal processed by the transduction structure from the vacuum cavity. Therefore, the assembly of the vacuum electronic tube can be simpler, and the refinement and consistency of the vacuum electronic tube can be improved.

This invention discloses a high-resistivity NdFeB permanent magnet material and its high-throughput preparation method. Specifically, the method includes: preparing a metal cladding of suitable size; assembling NdFeB, NdDyTbFeB metal strips and rare-earth alloy diffusion source strips into grooves within the metal cladding using an alternating arrangement of the metal strips and diffusion source strips; performing vacuum electron beam welding and hot isostatic pressing; slicing and sealing the resulting multi-element section before heat treatment; and finally, screening to obtain the high-resistivity NdFeB permanent magnet material. This invention, based on a high-throughput preparation method for diffusion multi-element sections, can obtain a large number of parallel samples in a short time. Combined with high-throughput testing and characterization methods, it allows for rapid screening of suitable diffusion sources and heat treatment temperatures, enabling efficient development of high-resistivity NdFeB permanent magnet materials.

The utility model relates to a kind of low additional bending moment welding film disc coupling structure, including axle, and axle both sides are connected by flexible film disc group installation disc;Flexible film disc group includes flexible film disc and adapter disc, adapter disc is connected with axle by transmission bolt and self-locking nut, and adapter disc is connected with installation disc by flexible film disc;Flexible film disc is connected installation disc and adapter disc by vacuum electron beam welding process, and flexible film disc inner circumferential end portion is equipped with flexible inner welding surface.The utility model is connected by welding instead of bolt, effectively reduce the weight of coupling;While by flexible film disc close to installation disc, so that gravity position is close to installation disc end face, additional bending moment to shaft head can be effectively reduced, improve dynamic characteristics, adapt to high speed application.

The present invention relates to the technical field of chemical metallurgy, and provides a method for preparing and purifying high-purity vanadium sponge. The method comprises: preparing a vertical vacuum reduction furnace, adding a reducing agent thereto, removing air from the furnace and introducing a protective gas thereinto; performing heating, adding vanadium chloride, then performing smelting, and after removal, placing same into a distillation furnace for heating and temperature-holding treatments; and finally, placing a product into a crucible in an electron beam furnace, performing evacuation, heating same to perform smelting, introducing a protective gas into the electron beam furnace after smelting, and cooling same to room temperature, so as to obtain a vanadium sponge product. In the present invention, high-purity vanadium sponge is prepared from a chloride of vanadium by means of a new metallothermic reduction-distillation method, and is further purified by means of vacuum electron beam refining. Therefore, the common technical problems of a long process, a low product purity, etc., during the preparation of high-purity vanadium metal by means of traditional methods are solved.

The invention discloses a phase change circulation heat dissipation device for a slow wave structure of a traveling wave tube and the traveling wave tube comprising the same, and relates to the technical field of microwave vacuum electronics, the heat dissipation device comprises an internal heat absorption unit integrated on a slow wave structure body base material, an external cooling unit arranged outside the traveling wave tube and a sealed circulation pipeline connecting the internal heat absorption unit and the external cooling unit, the three parts form a closed loop which is filled with a working medium. During working, the micro-scale flow channel of the internal heat absorption unit directly absorbs heat of the slow-wave structure, so that a working medium is vaporized; the steam flows to an external cooling unit for condensation and heat release under the action of pressure difference; condensate is driven by gravity and capillary force to flow back to the interior, and self-sustaining circulation is formed. Efficient heat dissipation under extremely high heat flux is achieved through phase change latent heat, the vacuum compatibility problem is thoroughly solved through closed independent circulation, the structure is compact, external strong driving force is not needed, the working stability of the traveling wave tube is remarkably improved, and the service life of the traveling wave tube is remarkably prolonged.

The present invention relates to a carbon isotope separation device using an electron beam heating method. And a carbon isotope separation method using the carbon isotope separation device. Specifically, the carbon isotope separation apparatus according to one aspect comprises: a high vacuum electron beam chamber; a magnetic metal cylinder disposed in the high vacuum electron beam chamber and including a carbon mixture storage unit on an upper surface thereof; and a water-cooled sample holder in contact with the lower surface of the magnetic metal cylinder, and the carbon isotope separation device can efficiently separate and concentrate carbon isotopes.

A device may include a substrate and an oscillation circuit integrated with the substrate. The oscillation circuit may include a field-emission-based vacuum transistor. The oscillation circuit may also include a capacitive transducer. An oscillation frequency of the oscillation circuit may be indicative of a magnitude of a temperature, a pressure, or a vibration at the capacitive transducer.

The invention provides a temperature control method and system for vacuum infiltration of indium in an array field emitter, and relates to the technical field of vacuum electronic device manufacturing, and the method comprises the steps: obtaining the surface three-dimensional temperature field distribution through the inversion of a deep convolutional neural network based on the spectral radiation energy; calculating transverse and axial longitudinal temperature gradients among the emission needles based on the distribution data, and inputting the transverse and axial longitudinal temperature gradients into an evaluation model to dynamically evaluate the infiltration uniformity; in combination with a proportional integral differential controller, a multi-temperature-zone heating power regulation and control instruction is generated according to a uniformity result, and the array temperature field meets the requirement of promoting uniform infiltration of the indium material by regulating power output of each temperature zone. The control precision and reliability of the indium infiltration uniformity of the complex three-dimensional structure field emitter in the vacuum high-temperature environment are improved.

The invention discloses a device and method for demonstration before welding and observation during welding of a vacuum electron beam, and particularly relates to the technical field of vacuum electron beam welding, the device comprises an observation device, an adjusting mechanism is arranged on the outer side of the observation device, and a protection mechanism is arranged at the bottom end of the observation device; the observation device comprises a device side frame, a protection frame is fixedly installed on the outer side of the device side frame through screws, an observation piece is arranged in the device side frame and the protection frame and comprises a first beam splitting prism, a visible light camera is arranged at the top end of the first beam splitting prism, and a lens is arranged at the bottom end of the first beam splitting prism. Through the arrangement of the observation device, the state of a molten pool in the welding process is clearly observed, clear molten pool dynamic and weld joint forming images are effectively obtained, visual monitoring of the electron beam welding process before welding and in the welding process is achieved through a modified light path, and the visual monitoring effect is good. And the vacuum electron beam welding quality of the workpiece is greatly improved.

The application discloses a kind of film diffusion cathode with chromium-containing emitting active material and its preparation method and application, the chromium-containing emitting active material includes: chromium, barium, calcium, aluminum, carbon, hydrogen and oxygen element, wherein, the molar ratio of chromium, barium, calcium, aluminum is 1-36:18-40:1-15:2-45.The chromium-containing emitting active material developed in the application compared with traditional barium calcium aluminate emitting material, innovatively introduces chromium element, and chromium is used as the carrier of active element barium during the working process of cathode, so that the film diffusion cathode prepared by it is significantly superior to ordinary film diffusion cathode in emission performance.And the preparation process of the chromium-containing emitting active material is simple, and the repeatability is good, with the potential of popularization and application in the field of vacuum electron devices.

The invention discloses a laser processing method and device for defect repairing of a special-shaped component, and relates to the technical field of laser processing repairing, the laser processing device comprises a processing table, a laser processing mechanism is arranged on the surface of the processing table, and the laser processing mechanism comprises a multi-directional linear module, an adjusting sliding seat and a laser head; a multi-direction linear module is installed on the surface of the machining table, an adjusting sliding base is installed on the surface of the multi-direction linear module, and a laser head is arranged below the adjusting sliding base. The laser processing device can overcome the defect that a traditional deduction method is poor in adaptability to workpieces in complex shapes, has the advantages of being small in heat input, high in repairing precision and wide in application range, improves the cladding effect of the laser processing device, avoids the phenomenon that a powder guide channel is blocked when the laser processing device is used, and improves the service life of the laser processing device. The cooling effect of the powder guiding channel is improved when the laser processing device is used, and the laser processing device is particularly suitable for efficient and low-cost repairing of air holes or finish machining overcut defects of aluminum alloy and other materials difficult to weld after vacuum electron beam welding.

Vacuum electronic devices (VEDs) having multiple two-dimensional layers of various materials are bonded together to simultaneously form one or more VEDs. The two-dimensional material layers are machined to include features required for device operation, such that when assembled and bonded into a three-dimensional structure, three-dimensional features are formed. The two-dimensional layers are bonded together into a sandwich-like structure. The manufacturing method is capable of incorporating metal materials, magnetic materials, ceramic materials, and other materials as required for VED fabrication, while maintaining the required positional accuracy and ability to produce multiple devices per batch.