3results about How to "Large power capacity" patented technology

The application discloses a K-band transit-time oscillator based on a last pre-cavity extraction structure, which comprises an inner cylinder and an anode outer cylinder sleeved outside the inner cylinder, a circular annular cavity is formed between the inner cylinder and the anode outer cylinder, the cavity comprises a first drift tube, a first modulation cavity, a second drift tube, a second modulation cavity, a third drift tube, an extraction cavity and a first coaxial output waveguide which are sequentially communicated, the output end of the anode outer cylinder is further provided with a circular annular second coaxial output waveguide, the first coaxial output waveguide and the second coaxial output waveguide are coaxially arranged, the second modulation cavity is further communicated with the second coaxial output waveguide, and the K-band transit-time oscillator is rotationally symmetrical about the central axis of the inner cylinder. The application verifies the feasibility of extracting microwave by the last pre-cavity, and realizes higher efficient output and higher power output.

This invention discloses a broadband multi-stage Gysel power divider based on IPD technology, comprising a microstrip structure layer, first and second dielectric substrates, and a grounding metal layer. The microstrip structure layer adopts a multi-layer nested structure, with each nested layer consisting of cascaded multi-stage Gysel power distribution units, disposed on the upper surface and inside the first dielectric substrate, forming an integrated layout based on IPD technology. This layout integrates a planar spiral structure, air bridges, parallel plate capacitors, thin-film resistors, and a layered grounding unit structure. The planar spiral structure is equivalent to a specific characteristic impedance transmission line; the air bridge structure solves crosstalk and suppresses parasitic capacitance; the parallel plate capacitor structure calibrates its equivalent reactance parameters; the thin-film resistor effectively improves port isolation and heat dissipation; and the layered grounding unit structure enhances heat dissipation and grounding reliability. This invention can achieve stable power distribution over a wide frequency band, adapting to the integration requirements of high-frequency, high-power, and miniaturized RF front-ends.

This invention relates to the field of radio frequency (RF) microwave communication, and particularly to an RF burn-out protection circuit and a high-power RF switch. The RF burn-out protection circuit of this invention includes a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matched load, a second matched load, a first RF circuit, and a second RF circuit. The RF burn-out protection circuit and high-power RF switch of this invention have high power capacity, low insertion loss, high isolation, stable VSWR performance, and are flexible in application and low in cost, possessing broad application prospects and value.