The invention discloses a poduction technology and a device for boron-removing and purification of polysilicon by adopting electromagnetic induction melting assisted with high-temperature plasma, andprovides a poduction technology and a polysilicon boron-removing and purification device which have low cost and high efficiency, are applicable to industrial popularization and adopt electromagneticinduction melting assisted with high-temperature plasma. The purification device is provided with a vacuum system, a mid-frequency induction melting system, a transferred arc plasma melting system anda pouring graphite mould. The technology comprises the following steps: putting the silicon metal into a crucible, vacuumizing, and heating and melting the silicon metal; increasing the power after melting to lead the liquid silicon temperature to be kept between 1600 DEG C and 1800 DEG C, starting the plasma melting system, declining a plasma gun above an arc initiating device, and introducing working gas for arc initiating; moving the arc initiating device off after arc initiating is finished, adjusting specified current and plasma arc length, after conducting plasma melting to the liquid silicon surface, zeroing the specified current, disconnecting the plasma arc, rising the plasma gun, turning off the air supply, pouring the liquid silicon into the mould, and taking silicon ingots outafter standing and cooling.