Method for magnetron sputtering low-temperature preparation of TiN film

A magnetron sputtering and thin film technology, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc. Effect of small gas ionization rate and surface roughness

Inactive Publication Date: 2015-06-17
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus restricting the production efficiency and application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for magnetron sputtering low-temperature preparation of TiN film
  • Method for magnetron sputtering low-temperature preparation of TiN film
  • Method for magnetron sputtering low-temperature preparation of TiN film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Put the 40×40×5mm steel sheet and the φ20 silicon sheet into the vacuum chamber of the equipment after cleaning and drying, vacuumize to -3 Pa, filled with argon gas, use a mass flow meter to control the argon gas intake flow rate to make it stable at 0.5Pa, turn on the revolution disk, the speed is stable at 5r / min, without ion source assistance, the Ti target power supply current is 9A, so that the Ti starts Hui, gradually increase the negative bias -80V. Nitrogen is introduced, and the mass flow meter controls the nitrogen intake flow rate to 18 sccm. Open the baffle, start timing, and prepare TiN hard films with different thicknesses by controlling the deposition time.

[0030] The prepared film was tested for transmittance by Lambda950 UV-Vis-NIR spectrophotometer of American PE Company, and the test results are as follows: figure 2 It can be seen from the curve a shown in the figure that the reflectivity of the titanium nitride film is low without plasma assista...

Embodiment 2

[0032]Put the 40×40×5mm steel sheet and the φ20 silicon sheet into the vacuum chamber of the equipment after cleaning and drying, vacuumize to <3Pa, open the high valve and heating pipe, wait for the temperature to stabilize at 100°C, and vacuum to 5 ×10-3Pa, fill with argon, use a mass flow meter to control the argon gas intake flow rate to keep it stable at 0.5Pa, turn on the revolution disk, and keep the speed at 5r / min, gradually increase the ion source power to 500W, Ti target power supply current To 9A, make Ti glow, and gradually increase the negative bias -80V. Nitrogen is introduced, and the mass flow meter controls the nitrogen intake flow rate to 18 sccm. Open the baffle, start timing, and prepare TiN hard films with different thicknesses by controlling the deposition time.

[0033] Utilize the photometer to carry out transmittance test to the prepared film, test result is as follows figure 2 As shown in curve b, it can be seen from the figure that the reflectivi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for magnetron sputtering low-temperature preparation of a TiN film. Based on improvement of the traditional magnetron sputtering technology, a plasma zone is introduced into a vacuum chamber, and a Ti metal target is subjected to mid-frequency pulse direct current or direct current sputtering under the control of work gas pressure, temperature, time and sputtering power so that a TiN film is deposited on a substrate. The method can prepare the TiN film with good performances at a low temperature and the prepared TiN film has improved crystallization degree, compactness and hardness, small surface roughness, and high film-substrate binding force and produces local shedding difficultly. The method can provides a sample for hard film experiment research or industrial production.

Description

technical field [0001] The invention belongs to the field of hard films. In particular, it relates to a new process for preparing TiN thin films by plasma-assisted magnetron sputtering in a low-temperature environment, and a new process for preparing TiN hard films by using plasma-assisted twin-target pulsed DC magnetron sputtering technology. Background technique [0002] As a multifunctional material, titanium nitride (TiN) film has high temperature stability, high hardness, low electrical conductivity, low friction coefficient, corrosion resistance and other properties, and is used in hard coatings, high temperature resistant coatings and decorative coatings. It has a wide range of applications in many fields. At the same time, due to its excellent solar spectrum selectivity and high temperature oxidation resistance, titanium nitride thin films have attracted much attention in the application of medium and high temperature solar selective absorption coatings. There are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/35C23C14/06
Inventor 李刚吕起鹏王锋公发全邓淞文孙龙金玉奇
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap