92 results about "Plasma zone" patented technology

An apparatus for selectively pre-coating a plasma processing chamber, including a chamber wall is disclosed. The apparatus includes a first set of RF electrodes, the first set of RF electrodes configured to strike a first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of confinement rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the first set of confinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first plasma zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered and the second set of RF electrodes is energized.

A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.

A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.

A method and apparatus for synthesis of fullerenes and nanotubes in large quantities at an economical cost from graphite in electric arc plasma process are presented. Different embodiments of channeled graphite electrodes for both direct current (DC) and alternative current (AC) processes are disclosed. High productivity of the carbon allotropes is achieved by feeding consumable graphitic electrode into hot plasma zone, injecting of feedstock, catalyst and buffer gas flow through the longitudinal inner channel electrodes into the hot plasma zone and creating the radial gas outflow in the gap between electrodes, and following removal of produced carbon and catalytic vapors from the hot plasma zone into an oxygen deprived reaction vessel for quenching and condensing. Deposited after condensation soot containing carbon allotropes is collected and carbon allotropes are recovered by known techniques. The final products of recovering are fullerenes C₆₀, C₇₀ and higher fullerenes or nanotubes.

A reformer is disclosed that includes a plasma zone to receive a pre-heated mixture of reactants and ionize the reactants by applying an electrical potential thereto. A first thermally conductive surface surrounds the plasma zone and is configured to transfer heat from an external heat source into the plasma zone. The reformer further includes a reaction zone to chemically transform the ionized reactants into synthesis gas comprising hydrogen and carbon monoxide. A second thermally conductive surface surrounds the reaction zone and is configured to transfer heat from the external heat source into the reaction zone. The first thermally conductive surface and second thermally conductive surface are both directly exposed to the external heat source. A corresponding method and system are also disclosed and claimed herein.

The invention discloses an atmosphere pressure plasma dealing fiber tuft or fiber thread surface device and method, which is characterized by the following: arranging quartz liner pipe in coaxial cover; constructing gas discharging plasma zone with quartz outer tube; forming high pressure electrode with inner surface or outer surface of the quartz linear through vacuum deposition plated metallic film; cup-jointing stainless steel cloth and water coat sandwich on the outer surface of the quartz outer tube; constructing earth electrode; using coaxial quartz glass tube to construct asymmetric electrode structure of medium discharge resistance; keeping special laminar flow disperse for gas in sandwich; diminishing consumption of gas; decreasing treating temperature effectively. This invention can choose proper high pressure electrode form, gas component, power parameter and treating speed according to different fiber material, which can proceed highly effective, low consumption and environment protection treat for the surface of fiber tuft or fabric cord.

The invention relates to a device for the treatment of free-form areas and zones of human or animal skin areas or plant surfaces by means of cold atmospheric-pressure plasma. The core of the device is a specific, preferably gas-permeable, electrode arrangement for generating a dielectrically impeded surface discharge where the earthed electrode is composed of electrically conductive textile material and the high-voltage electrode consists of a thin wire or electrically conductive thread which is sheathed with an insulting layer which has to meet specific requirements. On the basis of the present invention, it is possible to generate, in the area of diseased skin parts of the human body, in direct proximity to the skin surface or to wounds, a flat plasma for the treatment of the diseased areas which is acceptable in respect of the stress on the skin caused by temperature and electric potentials. The advantage of the gas-permeable textile sheet-like structure consists especially in that the arrangement can be placed flexibly onto variously curved surfaces and, in addition, offers the possibility of a gas exchange with the environment and/or the targeted dosing of a specific process gas mixture across the textile material into the active plasma zone.

The invention discloses a simulation method for super speed aircraft conformal sub-grid electromagnetic scattering characteristic analysis. The simulation method includes the following steps: performing aerothermodynamics simulation according to an aerodynamic configuration, the flight speed and the flight height of an aircraft, and determining the plasma collision frequency and the plasma oscillation frequency of all parts through simulation information; performing subdivision on an aircraft model and a plasma sheath through a tetrahedron to obtain structure information of the aircraft model; mapping flow field point information to ridges of a finite difference time domain computing grid, and determining a zone with a relative dielectric constant more than 6 according to the collision frequency and the oscillation frequency on the ridges to perform sub-grid processing; processing junctions between the ridges of the finite difference time domain computing grid and a metal surface through a finite difference universal time domain method; and computing the plasma zone through an iterative formula of plasma to finally determine the radar cross section of the super speed aircraft. The simulation method has good adaptability and high computational efficiency.

The present invention relates to a method for manufacturing an optical preform by carrying out one or more chemical vapor deposition reactions in a substrate tube. The method includes the steps of (i) supplying one or more doped or undoped glass-forming precursors to a substrate tube and (ii) effecting a reaction between these glass-forming precursors to form one or more glass layers on the interior of the substrate tube via the creation of a pulsed plasma zone in the interior of the substrate tube.

The invention discloses a method for growing nanocrystalline silicon powder. The method comprises the following steps: introducing gas mixture into a reaction chamber from gas inlet pipelines; inputting radio frequency alternating current into electrodes which are vertically arranged by a radio frequency source to cause working gases to discharge to form a plasma zone between quartz plates; enabling reactive gases to be decomposed by plasmas in the plasma zone, and enabling fragments obtained after decomposition to form nanocrystalline silicon cores; controlling the time spent on flowing through the plasma zone by the reactive gases by adjusting the flow of the introduced gases and/or adjusting the pressure of the reaction chamber, and controlling the sizes of the grown nanocrystalline silicon particles by controlling the retention time; and enabling the nanocrystalline silicon particles to stop growing after flowing out of the plasma zone along with airflow, and carrying out collection on a connection net to obtain the nanocrystalline silicon powder with uniformly distributed particle sizes. The method disclosed by the invention is simple to operate, has lower requirements for temperature, dispenses with heating devices, can be used for producing nanocrystalline silicon powder with uniformly distributed and controllable particle sizes, and can realize industrial production.

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant gas create an excited plasma zone. The excited plasma zone is translated across the substrate like a windshield wiper blade, or the substrate is conveyed under a fixed gas reaction zone.

An air sterilizer that operates by electro-kinetic conversion of energy is provided. The sterilizer can have an electro-kinetic converter, rows of needles fastened along support plates, and neutralizing electrodes. The converter can have a rectangular frame with two armatures joined by electrically insulating transverse plates. The armatures can be provided on one of the margins with a row of rectangular notches, equally-spaced with a constant pitch. In the notches, the ion-generating electrodes can be introduced. On their opposed margin, the plates can be interleaved at the same pitch and with V-shaped openings where the neutralizing electrodes can be introduced. The electrodes can be affixed by insulating covers, in the shape of the letter U. Each cover can be elastically deformable. The power supply can derive from an impulse generator with sufficient voltage to form an intense electric field which can ionize surrounding air and create a plasma zone.

The invention relates to a method for magnetron sputtering low-temperature preparation of a TiN film. Based on improvement of the traditional magnetron sputtering technology, a plasma zone is introduced into a vacuum chamber, and a Ti metal target is subjected to mid-frequency pulse direct current or direct current sputtering under the control of work gas pressure, temperature, time and sputtering power so that a TiN film is deposited on a substrate. The method can prepare the TiN film with good performances at a low temperature and the prepared TiN film has improved crystallization degree, compactness and hardness, small surface roughness, and high film-substrate binding force and produces local shedding difficultly. The method can provides a sample for hard film experiment research or industrial production.

The present invention provides a liquid discharge micro-plasma excitation source apparatus, which comprises a discharge pool and a circuit portion, wherein the discharge pool comprises an anode pool and a cathode pool, the anode pool and the cathode pool are connected through an inclined conduct pipe, the anode pool is provided with a gas discharge port, the side wall of the cathode pool is provided with a protection gas inlet, a gas discharge port, a sample inlet and volume scales, the bottom portion is provided with a wastewater outlet, and the circuit portion comprises a direct current power supply and a current limiting resistor. The present invention further provides a plasma excitation method, which comprises that a solution containing a sample to be detected is introduced into a discharge pool, the discharge is achieved by reducing the distance between the cathode and the liquid level to produce the plasma, the element to be detected in the solution is introduced into the plasma zone and is excited, and the produced characteristic emission spectral line is analyzed so as to carry out qualitative and quantitative analysis on the element to be detected. According to the present invention, during the running, the plasma is adopted as the cathode and the electrochemical reaction is conducted on the plasma-solution surface to generate the gaseous compound of the element to be detected, and the gaseous compound enters the plasma zone and is excited so as to improve the plasma excitation efficiency and improve the sensitivity.

A sputtering system is provided. The sputtering system comprises a cavity, sputtering sources and a base. Plasma is produced in the cavity. The base is used for bearing a substrate. The sputtering system comprises at least one pair of the sputtering sources, and the sputtering sources in each pair are oppositely disposed. The base is disposed in the cavity and outside a plasma zone. The sputtering system is high in sputtering speed, low in damage to film and capable of achieving low-temperature sputtering.

The invention provides a preparation method of a three-dimensional TiO2 crystal film. The method comprises steps of: letting discharge gas in medium block discharge plasma reactor by employing a normal pressure low temperature radio frequency medium block glow discharge method; the discharge gas discharging to generate plasma jet by radio frequency alternating current; sending a precursor and carrying gas to a plasma zone to carry out reaction and precipitate on a substrate, so as to obtain the three-dimensional TiO2 crystal film. The method is characterized in that the precipitate is inner glow precipitate. The TiO2 obtained by the invention has a large proportion of {001} active surface and a unique three-dimensional structure forming by intersecting growth of a {101} surface, a {001} surface and a {101} surface; and the titanium dioxide film irradiates strong visible fluorescence by excitation of laser of 325 nm wavelength at room temperature.

The invention discloses a method and device of plasma heater chemical vapour deposition to bring plasma by dielectric-trap discharging. It is characterized in that: Zero equipotential planes supplied by wire netting is taken as zero potential electrode of dielectric-trap discharging. Heater is on the other side of wire netting, which realizes the separation of plasma zone and heater zone. Substrate below the heater is far away from plasma to avoid high-energy ion bombard. Compared with direct current, radio-frequency and microwave plasma, dielectric-trap discharging has strongpoint including simple device, low cost and small power consumption etc. The method and device can efficiently increase film sedimentation rate and film quality. The invention is applicable for preparation of polycrystal/amorphous Si, SiC, diamond, nanophase diamond and C nanophase tube.

A thermally integrated system for producing electricity from a feedstock fuel is disclosed. The system utilizes a reformer that includes a plasma zone to receive a pre-heated mixture of reactants and ionize the reactants by applying an electrical potential thereto. A first thermally conductive surface surrounds the plasma zone and is configured to transfer heat from an external heat source into the plasma zone. The reformer further includes a reaction zone to chemically transform the ionized reactants into synthesis gas comprising hydrogen and carbon monoxide. A second thermally conductive surface surrounds the reaction zone and is configured to transfer heat from the external heat source into the reaction zone. The first thermally conductive surface and second thermally conductive surface are both directly exposed to the external heat source. A corresponding method and apparatus are also disclosed herein.