Inductive plasma sources for wafer processing and chamber cleaning

Abstract

Methods and systems for depositing material on a substrate are described. One method may include providing a processing chamber partitioned into a first plasma region and a second plasma region. The method may further include delivering the substrate to the processing chamber, where the substrate may occupy a portion of the second plasma region. The method may additionally include forming a first plasma in the first plasma region, where the first plasma may not directly contact the substrate, and the first plasma may be formed by activation of at least one shaped radio frequency (“RF”) coil above the first plasma region. The method may moreover include depositing the material on the substrate to form a layer, where one or more reactants excited by the first plasma may be used in deposition of the material.

Description

FIELD[0001]This application relates to manufacturing technology solutions involving equipment, processes, and materials used in the deposition, etch, patterning, and treatment of thin-films and coatings, with representative examples including (but not limited to) applications involving: semiconductor and dielectric materials and devices, silicon-based wafers and flat panel displays (such as TFTs).BACKGROUND[0002]A conventional semiconductor processing system contains one or more processing chambers and a means for moving a substrate between them. A substrate may be transferred between chambers by a robotic arm which can extend to pick up the substrate, retract and then extend again to position the substrate in a different destination chamber. FIG. 1 shows a schematic of a substrate processing chamber. Each chamber has a pedestal shaft 105 and pedestal 110 or some equivalent way of supporting the substrate 115 for processing.[0003]A pedestal can be a heater plate or a cooling plate i...

AI Technical Summary

Benefits of technology

[0015]While many or all of the above embodiments may be employed in flowable CVD systems, some or all of the details discussed, supra and infra, may also be employed in conventional CVD and etching processes, as well as remote plasma sources for cleaning, deposition, etching, and other processes.

[0016]Additional embodiments and features are set forth in part in the description that follows, and in part will become apparent to those skilled in the art upon examination of the specification or may be learned by the practice of the disclosed embodiments. The features and advantages of the disclosed embodiments may be realized and attained by means of the instrumentalities, combinations, and methods described in the specification.

Problems solved by technology

Some very narrow gaps, however, have continued to develop voids due, in part, to the lack of mobility following initial impact.

Reflowing the material after deposition can fill the void but, if the dielectric has a high reflow temperature (like SiO2), the reflow process may also consume a non-negligible portion of a wafer's thermal budget.

Unfortunately, low viscosity materials may shrink significantly during cure.

Significant film shrinkage results in high film stress and delamination issues, especially for thick films.

Also, SOG is done in the atmosphere with high speed spin, and it is difficult to achieve partial gap fill and conformal gap fill.

Growing films this way limits the time available for adsorbed species to remain mobile, a constraint which may result in deposition of nonuniform films.

Images