TM021 modal high-power microwave plasma diamond film deposition device

Abstract

The invention provides a TM021 modal high-power microwave plasma diamond film deposition device. The TM021 modal high-power microwave plasma diamond film deposition device comprises an upper cylinder, a lower cylinder, an adjustable upper cavity, a microwave reflecting plate, a deposition table, a microwave coaxial excitation port, a microwave quartz port, a gas inlet, a gas outlet, a temperature measuring hole, an observing window and the like. The TM021 modal high-power microwave plasma diamond film deposition device has TM021 modal electric field distribution and the characteristics of centralized electric field distribution in a microwave resonator and stable excited plasma locations. The distribution of plasmas in the device can be optimized in real time through a regulating mechanism of the device. An annular microwave quartz window placed below the deposition table can be prevented from being excessively heated, polluted and etched by the plasmas. The inner wall of a resonant cavity is far away from a high-temperature plasma zone, so that the thermal radiation on the inner wall of the cavity is weakened, and foreign matter deposition is avoided. Each main part of the device can be directly water-cooled. Due to the advantages, the device can be applied to the input of relatively high-power microwaves, and the high-efficiency deposition of large-area high-quality diamond films is realized.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to the preparation of large-area high-quality diamond films. Background technique [0002] Diamond has excellent properties such as high hardness, high room temperature thermal conductivity (greater than 20W / cm·K), low expansion coefficient, high chemical inertness, high optical transparency, etc. It is used in heat sinks of high-power electronic devices, high-power Industrial fields such as lasers and infrared windows have great application value. To achieve these important applications, large-area, high-quality self-supporting diamond films must be efficiently fabricated. [0003] Among various chemical vapor deposition methods, microwave plasma chemical vapor deposition (MPCVD) has become a high The preferred method for quality diamond films. [00...

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a kind of efficient high-power microwave plasma diamond film chemical vapor deposition device, it will be able to overcome the parts distances such as microwave window or microwave antenna, deposition chamber wall in existing various MPCVD diamond film deposition devices Due to the shortcoming that the plasma is close, the device is not easy to adjust and the direct water cooling is not easy to increase the microwave power of the MPCVD device, it can be applied to the efficient deposition of high-quality diamond films under high power conditions

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