88results about How to "Fast sputtering rate" patented technology

The invention discloses a preparation method of a MoS2 composite thin film with high hardness and loss abrasion on a surface of a substrate. The method comprises the following step: sequentially depositing a metal Ti priming coat, a TiN transitional layer and a Ti/MoS2 composite thin film on the surface of the substrate by using a high power pulse magnetron sputtering technology combined with optimized process conditions to obtain the MoS2 composite thin film which is strong in film binding force and high hardness and has low frictional coefficient and wear rate in various frictional environments. The nano hardness of the composite thin film is over 11GPa, the critical load value is over 60N, and the frictional coefficients in room-temperature air with relative humidity of 30%, 50% and 70%, an N2 atmosphere and a hydraulic oil environment are below 0.055. Therefore, the substrate is effectively protected in frictional reduction, and the composite thin film has a good application prospect.

The invention relates to the field of the film coating of glass, in particular to low-emissivity film-coated glass which is high in visible light transmittance, high in infrared reflection and available in heat treatment, and a sandwich glass product thereof. A film layer structure comprises medium layers and infrared reflecting layers, which are upwards superposed alternately from a glass substrate; a sequence of superposing the medium layers and the infrared reflecting layers alternately is that the medium layers are followed by the infrared reflecting layers; and the low-emissivity film-coated glass is characterized in that an upper medium layer positioned at an uppermost layer comprises a second medium film which is selected from at least one of ZrO2 and ZrOxNy, and a third medium film which is deposited on the second medium film and is selected from at least one of oxides of Ti, Al, Si, Ta, Hf, Nb, Cr, Ni, Fe, Mo, W and Y or is selected from at least one of nitrides and nitrogen oxides of the Ti, the Al, the Ta, the Nb, the Fe, the Hf, the Ni and the Cr. The low-emissivity film-coated glass and the sandwich glass product thereof have the advantages that the film-coated glass and the sandwich glass product thereof are high in the visible light transmittance and good in mechanical stability and high-temperature heat treatment stability.

The invention discloses an AZO sputtering target for a high-stability transparent conductive film and a manufacturing method. The raw material powder used by an IZGO sputtering target comprises 2 to 3wt% of Al2O3, 0.1 to 3wt% of B2O3 and the balance of ZnO powder; the average grain diameter of the powder is 0.05 to 50 microns, and the purity of the raw material powder is larger than or equal to 4N. The material of the invention is easier to control when used in the production process of the transparent conductive film through magnetron sputtering, a serious poisoning phenomenon similar to an ITO does not exist, and the sputtering process does not need heating, which has more advantages in the production of flexible conductive films such as plastics, and the stability and the weatherability of the film are much superior to that of the ITO and traditional zinc aluminum oxide conductive films. The resistivity of the produced transparent conductive film is smaller than 5*10 to 4Omega.cm, the visible light transmittance of 400 to 700nm is larger than 85%, and the requirements of various transparent conductive films can be satisfied.

A process for preparing the vanadium oxide film by magnetically controlled sputtering with the reaction between two opposite targets includes such steps as washing Si (or glass) substrate, depositing a silicon oxide film layer on the Si substrate by PECVD method, and magnetically controlled sputtering with two opposite targets to deposit vanadium oxide film. The technological condition for said sputtering is also disclosed. Said film features high electric resistance-temp coefficient and low electric resistance at ordinary temp.

The invention provides a method for manufacturing a tantalum target material. The method comprises the following steps: firstly, carrying out hot forging on a tantalum ingot and then carrying out first annealing on the hot-forged tantalum ingot to form a first tantalum target material billet; rolling the first tantalum target material billet to form a second tantalum target material billet; and carrying out second annealing on the second tantalum target material billet to obtain the tantalum target material. The tantalum target material formed according to the technical scheme has fine internal grains and uniform internal microstructure and thus the defects such as delamination inside the tantalum target material are effectively avoided, the sputtering rate of the tantalum target material and the quality of the formed tantalum film in the subsequent use process are improved.

The invention discloses a welding method adaptable to high-temperature sputtering target material. The welding method includes (1) cleaning weld faces of the target material and a back plate; (2) adding silver powder with mass percentage of 60% to 70% or activated carbon particles with mass percentage of 70%-80% to epoxy resin adhesive, and evenly coating on the weld faces of the target material and a back plate and two faces of a copper net; (3) placing and positioning the copper net and the target material on the back plate in sequence; (4) placing pressing blocks with certain weight on the target material; (5) solidifying in normal-temperature and normal-pressure environment; and (6) cleaning excess adhesive on the edge of the target material after cooling. When film is produced, the target material produced by the welding method can bear the temperature ranging from 200 DEG C to 250 DEG C, target material sputtering power can increase to almost three in one, sputtering power is increased obviously; and during the process of target material rapidly sputtering, target missing is omitted, high-speed continuous sputtering can be realized, and production efficiency is improved significantly.

The invention provides a copper nanowire / copper film composite structure and a preparation method thereof, and aims to provide a copper nanowire / copper film composite structure and a magnetron sputtering preparation method thereof. The invention employs a small deposition angle direct current magnetron sputtering deposition technology and prepares a copper nanowire / copper film composite structure on a glass substrate by proper adjusting of film thickness, substrate temperature and substrate bias voltage. The copper nanowire / copper film composite structure provided by the invention has smooth copper nanowire surface, uniform radial thickness, a length of 0.1-5mm, a diameter of 100-500nm and a copper film thickness of 50-100nm. The copper nanowire is parallel to the copper film surface and embedded in the copper film with a thickness less than that of the copper nanowire. According to the invention, metal copper film surface is embedded with sub-wavelength copper nanowire, which has potential application prospect infields related to surface plasma.

The invention discloses a sputter coating method, which adopts a magnetic field-assisted sputtering mode for coating, wherein a target and a substrate are arranged in parallel inside an electric field between two electrodes; the target is positioned on the surface of a cathode; the substrate is positioned on an anode; a plasma is formed between the target and the substrate; the target is bombarded by ions to generate sputtering; and sputtered target composition particles are deposited on the substrate to form a membrane. The sputter coating method is characterized in that: the target is positioned inside a magnetic field generated by a permanent magnet or an electromagnet or an electromagnetic coil, and the direction of the magnetic field is perpendicular to the surface of the target. The method can greatly improve the speed of sputter coating and the crystallization quality of the coating, integrally and uniformly etch the target, improve the utilization rate of the target to between 85 and 90 percent, and obtain higher sputtering speed and the same sputtering effect for both magnetic targets and nonmagnetic targets.

The invention discloses a method for preparing a titania film by using gas flow reaction sputtering under a middle gas pressure and a method for preparing a solar cell. The preparation method for the titania film comprises the following steps of: A), placing a glass substrate plated with a transparent conducting film into a reaction chamber of vacuum sputtering coating equipment and vacuumizing the reaction chamber; and B), introducing a working gas into a target chamber between a pair of titanium targets which is oppositely arranged in a cathode device of the vacuum sputtering coating equipment, and introducing oxygen outside the target chamber, wherein the sputtering gas pressure of the working gas is 10 to 100 Pa, and a TIO2 film is formed on the transparent conducting film by sputtering deposition. The method improves the sputtering gas pressure, and prevents high-energy superoxide anions O- and neutral argon particles from bombarding the substrate so as to reduce crystal defects and improve the electrical conductivity and the thermal stability of the TIO2 film.

The invention relates to a method for preparing a metal ion-doped titanium dioxide target material and a target material thereby. The target material is prepared by adopting the steps of preparing metal ion-doped titanium dioxide powder through a solution reaction and compressing and sintering. The preparation process is simple and is easy to realize uniform doping of one or more metal ions; the doping amount of the ions can be precisely controlled, and the metal ions can enter a titanium dioxide crystal lattice in the preparation process to generate chemical bonding; the average crystal granularity of titanium dioxide in the prepared target material is below 200 nano, and the target material has high density; and the target material can be used for preparing a metal ion-doped titanium dioxide nano film by adopting a magnetron sputtering method.

The invention belongs to the technical field of film-coating devices, and particularly discloses a multi-cavity horizontal magnetron sputtering film-coating production line. The multi-cavity horizontal magnetron sputtering film-coating production line, in a forward direction of a substrate, successively comprises a feeding platform, a substrate feeding chamber, a heating chamber, a front bufferingchamber, at least two mutually independent magnetron sputtering vacuum film-coating chambers, a rear buffering chamber, a cooling chamber and a discharging platform, and further comprises a transmitting mechanism for transmitting the substrate. The magnetron sputtering film-coating production line is good in film forming effect of magnetron sputtering, high in production efficiency, and high in utilization ratio of a target material, and capable of satisfying the continuous film-coating requirements of a multi-layer functional film, and reducing the using cost of the target material.

The invention discloses a preparation method of a TZO semiconductor material for high-transmittance energy-saving glass and a preparation method thereof. ZnO and SnO2 powder is used as main materials; even mixing is carried out, a biscuit is manufactured, and drying, sintering and machining are carried out to obtain a zinc/tin oxide semiconductor material with the relative density larger than 95%; volume resistivity is smaller than or equal to 6*10<-2> omega.cm, the material is used as the magnetron sputtering target material for manufacturing Low-E glass with the transmittance larger than or equal to 85% and replaces zinc-tin alloy coating materials which are greatly used at present, the process of producing a zinc/tin oxide film through magnetron sputtering is more stable, the production technology is simpler, the sputtering speed is high, the production efficiency is improved by more than 5%, the large-area coating film layer has uniform ingredients and fine structure, the requirement of manufacturing double-silver three-silver Low-E glass for sputtering equipment is lowered, and the TZO semiconductor material has the advantages for preparing large-size high-transmittance glass.

The invention relates to a boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and a preparation method of the boron-carbon-nitrogen film, and belongs to the technical field of film materials and preparation thereof. The boron-carbon-nitride film is of an amorphous structure containing boron nitride nanocrystals and growing on a silicon substrate. According to the preparation method, boron nitride containing carbon is used as a target material, and the boron-carbon-nitrogen film is prepared in a deposition chamber of a radio frequency magnetron sputtering device,wherein the substrate temperature ranges from room temperature to 600 DEG C, working gases comprise an argon gas and a nitrogen gas, flow rates are 50 sccm and 0-50 sccm respectively, and the workingpressure is 1 to 3 Pa. Ordered and controllable growth of the orientation of boron nitride nanocrystals in a film can be realized by adjusting technological parameters, and the obtained boron-carbon-nitride film has an optical band gap of about 2.7 to 4.5 eV, and has good and adjustable optical properties. The preparation method provided by the invention has the advantages of simple and safe process, mature technology, high sputtering rate, uniform deposition film, controllable size and the like, and is suitable for industrial mass production and promotion.

The invention provides a silver-copper alloy target material and a preparation method thereof and belongs to the technical field of sputtering target materials. The preparation method of the silver-copper alloy target material, provided by the invention, comprises the following steps of conducting smelting on copper and silver under a protective atmosphere to obtain a liquid alloy; conducting spraying deposition treatment on the liquid alloy to obtain a silver-copper alloy cast ingot; conducting homogeneous annealing, ECAP extrusion, low-temperature annealing, upsetting deformation and rollingtreatment on the silver-copper alloy cast ingot in sequence to obtain a silver-copper alloy raw ingot; and conducting recrystallization annealing treatment on the silver-copper alloy raw ingot to obtain the silver-copper alloy target material. The silver-copper alloy target material prepared through the method has the characteristics of being small in grain size, uniform in crystal grain distribution, uniform in ingredient and high in compactness.

The invention provides a production method of color fiber fabric. The production method comprises the following steps that at least one composite film is deposited on at least one surface of the fiberfabric through a vacuum deposition method, wherein the composite film sequentially comprises a cushioning layer, a reflective layer, a first protective layer, a color producing layer and a second protective layer from bottom to top; the color producing layer comprises at least one of ZnO, Fe2O3, TIO2 and CuO; and when the layers of the composite film are deposited, working gas needs to be continuously introduced, and the working gas comprises argon and/or nitrogen and/or oxygen. According to the production method, the color adjustment control of the fiber fabric is simple and practicable, theproblem that the metal film is easily oxidized is solved, and the oxidation resistance of a surface film of the fiber fabric is enhanced, so that colored film coated on the surface of the fiber fabric is more durable; and the method is suitable for industrial production. The invention further provides the color fiber fabric. The color fiber fabric is rich in color and good in color fastness and can be prepared through an industrial method.

The invention provides a preparation method of a high-selectivity absorbing coating of a solar vacuum tube, which adopts a magnetron reactive sputtering method, wherein the sputtering gas is argon, the reactant gas is highly pure nitrogen and carbon tetrafluoride gas, and the used equipment is a three-target magnetron sputtering film coating machine. The preparation method comprises the following steps: firstly, depositing a titanium nitride TiN infrared reflecting film by magnetron reactive sputtering on the outer wall of the inner tube of a glass tube; then depositing an aluminum nitride-stainless steel (AlN-SS) composite absorbing film; finally depositing an aluminum-carbon-fluorine (Al-C-F) composite protecting film to form a Glass/TiN/AlN-SS/AL-C-F selective absorbing coating.

The invention relates to a thin film and a switch material for a phase change memory chip, and a preparation method of the switch material, belonging to the field of materials. The switch material comprises a chalcogenide doped with a carbon nano tube. Due to introduction of the carbon nano tube, the thermal conductivity and electric conductivity of the material are improved substantially, but the I-V curve characteristic of the material as the switch material is not changed, so that the machinability, yield rate and production rate of a target material made of the mixed material are improved substantially in the post-processing process, meanwhile, the thin film sputtered by the target material maintains the performance of the nano-second switch material, so as to be used for preparing the phase change material-based memory chip.

The invention provides a steel strip ion coating coloring process. The process comprises the following steps that S1, a steel strip enters an AEG chamber for ion cleaning, an anode rod and a cleaningtarget material are mounted in the AEG chamber, and the anode rod is located above the cleaning target material; and argon is introduced into the AEG chamber in a high vacuum environment, high-energyargon ions are generated through glow discharge of the argon, and bombards the steel strip at a high speed under the action of a magnetic field and an anode bar. The cleaned steel strip enters a vacuum coating section for coating, and the vacuum coating section comprises a vacuum coating bottoming chamber and a plurality of vacuum coating chambers; and the steel strip enters a vacuum coating bottoming chamber to be subjected to target bottoming, and then enters the plurality of vacuum coating chambers in sequence, and is subjected to coating through a magnetron sputtering coating method. The steel strip ion coating coloring process has the advantages that the sputtering speed is high, the coating effect is good after sputtering, the color is uniform, the color difference is small, and theconsumption of the target material is small.

The invention provides a tin oxide target. The tin oxide target is used for preparing stannous oxide films and comprises elemental Sn and SnO2 which are mixed evenly. The atomic ratio of Sn atoms to O atoms in the tin oxide target is greater than 1:2 but smaller than or equal to 2:1. The invention further provides a preparation method of the tin oxide target.

The invention relates to a vanadium high-temperature solar selective absorption coating and a preparation method thereof. The selective absorption coating consists of three layers of film and comprises a bottom infrared reflection layer, an intermediate absorption layer and a surface anti-reflection layer, wherein the bottom infrared reflection layer is deposited on the surface of a substrate, the intermediate absorption layer is deposited on the bottom infrared reflection layer, and the surface anti-reflection layer is deposited on the intermediate absorption layer; and the bottom infrared reflection layer consists of a metal vanadium (V) film, the intermediate absorption layer comprises a first sub-layer and a second sub-layer, both the first and the second sub-layers respectively consist of a V + silicon dioxide (SiO2) film or a V + aluminum oxide (Al2O3) film, and the surface anti-reflection layer consists of a SiO2 film or an Al2O3 layer. The vanadium-based high-temperature solarselective absorption coating is stable in high temperature and has high absorption rate to the solar spectrum and low transmission rate. The preparation technique is simple and convenient to operate and easy to control, the sputtering speed is fast, the production period can be shortened, the process is stable, and the equipment cost and production cost can be greatly reduced.

The invention provides a magnetic-pole-assisted unbalanced magnetic control sputtering device which comprises a vacuum chamber, unbalanced magnetic control electrodes, assisting magnetic poles and a substrate bearing frame. The substrate bearing frame is arranged on the lower side of the vacuum chamber, the unbalanced magnetic control electrodes are arranged at the center of the upper side of the vacuum chamber, and the assisting magnetic poles are arranged on the two sides of the unbalanced magnetic control electrodes; or the unbalanced magnetic control electrodes are uniformly distributed on the same circumference with the center of the upper side of the vacuum chamber as the circle center, and the assisting magnetic poles are uniformly distributed on contour lines of the inner wall of the vacuum chamber and/or arranged at the center of the upper side of the vacuum chamber; when an even number of the unbalanced magnetic control electrodes exist, the two sides of at least one pair of the unbalanced magnetic control electrodes which are arranged side by side are provided with the assisting magnetic poles; and when an odd number of the unbalanced magnetic control electrodes exist, the number of the assisting magnetic poles which are uniformly distributed on the contour lines of the inner wall of the vacuum chamber is equal to that of the unbalanced magnetic control electrodes. By means of the magnetic-pole-assisted unbalanced magnetic control sputtering device, informality of a deposited film in terms of the ingredient, the microstructure and thickness can be improved.

The invention relates to a magnetron sputtering preparation method of vanadium oxide, and belongs to the technical field of film preparation. The preparation method comprises the following steps: step one, washing the surface of a silicon chip; step two, depositing a layer of silicon oxide film on the surface of the silicon chip; step three, utilizing target materials having the advantages of high utilization rate and uniform sputtering on film to carry out magnetron sputtering to deposit a vanadium film; wherein the technology conditions are as follows: the bottom vacuum is 3*10<-4> Pa, the argon/oxygen ratio is 100:1 to 140:1, the sputtering power is 150 W to 240 W, and the substrate temperature is 25 to 200 DEG C. The preparation method has the advantage that a vanadium oxide film having a high resistance temperature coefficient and a low room temperature resistance can be prepared just through changing the sputtering technological conditions without carrying out a high temperature hot treatment, and thus the film plating technology is simplified.