Preparation method of TZO semiconductor material for high-transmittance energy-saving glass

A technology for energy-saving glass and semiconductors, applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problem that product performance cannot meet energy-saving glass, etc., achieve reduced production equipment investment, simple production process, and low required effect

Inactive Publication Date: 2016-01-27
NANJING TEMCH OPTOELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The current energy-saving glass with a transmittance greater than 70% usually uses zinc-tin alloy, zinc-aluminum alloy, and zinc-aluminum oxide as sputtering materials, and its product performance can no longer meet the requirements of actual energy-saving glass.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Weigh the purity of 4N, the average particle size of 1.0 microns ZnO 1000 grams of powder, add 1000 grams of Sn with an average particle size of 5 microns O 2 Powder, add 700g of deionized water and 10g of triethanolamine, 20g of polyvinyl alcohol organic additives, ball mill and mix for more than 12 hours, the slurry is spray-dried and granulated to obtain a raw material with an average particle size of 50 microns, using cold isostatic Press 150Mp to form a green body with a relative density greater than 55%. The green body is kept in an air furnace at 500°C for 4 hours to remove organic additives, and the temperature is raised to 1500°C to sinter and compact to obtain a ceramic semiconductor with a relative density of 98%. The sintered body is processed and ground to a TZO material with a diameter of 76 mm and a thickness of 6 mm. DC magnetron coating is performed in a SIM560 magnetron sputtering machine with a power of 100W and Ar 2 The pressure is 0.6Pa, the temp...

Embodiment 2

[0022] Weigh the purity of 4N, the average particle size of 1.0 microns ZnO Powder 1000 grams, adding weight 250 grams average particle size 5 microns Dy 2 O 3 Powder, add 35% of the total weight of deionized pure water and mix it with a ball mill for more than 12 hours, dry it through a 100-mesh sieve, put the powder into a high-strength graphite mold with a BN coating within an inner diameter of 120 mm, and place it in a hot-press furnace Hot pressing and sintering at 1000°C for 1 hour, cooling and demoulding mechanical processing to obtain a TZO material with a relative density of 95% and a diameter of 76 mm and a thickness of 6 mm. Coating in a SIM560 magnetron sputtering machine, power 100W, Ar 2 The pressure is 0.6Pa, the temperature of the glass substrate is normal temperature, the sputtering process is stable and easy to control the sputtering, the thickness of the film measured by XP-1 step meter is 200 nanometers, and the visible light transmittance of 400-700 n...

Embodiment 3

[0024] Pure water, methacrylamide monomer, N-N ， Dimethylbisacrylamide is fully dissolved at a ratio of 100:16-18:0.6-1 to form a premix, and an appropriate amount of tetramethylammonium hydroxide (0.1-1.5%) is used as a dispersant, and the weighing purity is 4N, the average Particle size 2 microns ZnO Powder 1000 grams, add weight 650 grams average particle diameter 5 micron Sn O2 Powder, stir the raw material powder to make slurry, the solid phase content of the powder in the slurry is 55-65%, pour the prepared slurry into the ball mold machine and use zirconia balls as the medium ball mill for more than 12 hours, then add 0.1 - 1% volume of organic degassing agent such as n-butanol, 0.1-1.5wt‰ tetramethylethylenediamine catalyst and 0.01-0.5wt‰ ammonium persulfate initiator, stirring and degassing in a vacuum mixer for 20 minutes, passing through 100 mesh Sieve pouring into a non-porous mold with a diameter of 150 mm. After the wet green body is solidified and demolded, ...

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Abstract

The invention discloses a preparation method of a TZO semiconductor material for high-transmittance energy-saving glass and a preparation method thereof. ZnO and SnO2 powder is used as main materials; even mixing is carried out, a biscuit is manufactured, and drying, sintering and machining are carried out to obtain a zinc/tin oxide semiconductor material with the relative density larger than 95%; volume resistivity is smaller than or equal to 6*10<-2> omega.cm, the material is used as the magnetron sputtering target material for manufacturing Low-E glass with the transmittance larger than or equal to 85% and replaces zinc-tin alloy coating materials which are greatly used at present, the process of producing a zinc/tin oxide film through magnetron sputtering is more stable, the production technology is simpler, the sputtering speed is high, the production efficiency is improved by more than 5%, the large-area coating film layer has uniform ingredients and fine structure, the requirement of manufacturing double-silver three-silver Low-E glass for sputtering equipment is lowered, and the TZO semiconductor material has the advantages for preparing large-size high-transmittance glass.

Description

technical field [0001] The invention relates to a new manufacturing method of semiconductor ceramic products, in particular, the invention is a kind of high-transparency energy-saving glass mainly composed of zinc oxide and tin oxide TZO The method of preparation of the material. Background technique [0002] Nearly 50% of building heat is lost through doors and windows, and the use of energy-saving glass is an important aspect of building energy conservation. At present, the utilization rate of energy-saving glass in Germany reaches 92%, that of the United States is 90%, that of Japan is 85%, and that of China is less than 10%. The state requires that by 2020, new buildings will achieve the goal of 65% energy saving, and energy-saving glass has great application potential. [0003] With the improvement of energy-saving glass technology standards, high-transmittance Low-E glass with a shading coefficient of less than 0.2 and a transmittance greater than 80% will gradually ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/453C04B35/622C23C14/35
Inventor 孔伟华
Owner NANJING TEMCH OPTOELECTRONICS MATERIAL CO LTD
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