23 results about "Zinc tin oxide" patented technology

The invention discloses a method for preparing pine needle-shaped zinc tin oxide by electrostatic spinning and a hydrothermal method as well as a product and application of the pine needle-shaped zinc tin oxide, and belongs to the technical field of sensing materials. A hexagonal-prism-shaped zinc oxide substrate material is prepared through an electrostatic spinning technology, needle-shaped tin oxide grows on the surface of the hexagonal-prism-shaped zinc oxide substrate material in combination with a hydrothermal method, and the pine needle-shaped zinc tin oxide is obtained. The method is simple to operate, non-toxic, low in cost and suitable for large-scale production. The prepared material has a high specific surface area, a unique heterojunction interface can be used as a channel for gas diffusion and electron transfer, the interface has rich oxygen vacancies, and the electron capture and gas ion adsorption conversion capability is remarkably accelerated. The pine needle-shaped zinc tin oxide is used for preparing a gas sensitive sensor, and has a wide application prospect in the related fields of photocatalysis, clean energy, environmental governance and the like.

The present application relates to a low-emissivity glass and a method for preparing the same. The low-emissivity glass includes a glass substrate, and a barrier layer, a first dielectric layer, a silver-containing functional layer, a first stress relaxation layer, a metal slip layer, and a second stress relaxation layer that are sequentially stacked on the surface of the glass substrate; the first stress relaxation layer includes one or more of zinc aluminum oxide, zinc oxide, zinc tin oxide, and tin oxide, the metal slip layer includes an alloy composed of one or more of nickel, chromium, molybdenum, titanium, niobium, and zirconium, and the second stress relaxation layer includes one or more of zinc aluminum oxide, zinc oxide, zinc tin oxide, and tin oxide. In the present application, by designing the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer on the surface of the silver-containing functional layer, the internal stress of the film layer on the surface of the glass substrate can be released, the influence of the internal stress on the crystallinity of the silver-containing functional layer can be reduced, and thus the crystallinity of the silver-containing functional layer can be improved, and the surface resistance of the low-emissivity glass can be reduced.

Disclosed herein is a FeFET transistor and related integrated circuits. The channel layer of the transistor (1612a) may be formed from an Amorphous Oxide Semiconductor. Examples of amorphous oxide semiconductors that could be utilized include Indium Oxide, Indium Gallium Zinc Oxide (IGZO), Zinc Tin Oxide (ZTO), Indium Zinc Oxide (IZO), Gallium Zinc Oxide (GZO), Aluminum Zinc Oxide (AZO), Cadmium Oxide, Hafnium Indium Zinc Oxide (HIZO), Tin Oxide, and Indium-Tin-Zinc Oxide (ITZO), among others. The amorphous oxide semiconductor channel layer may also be doped with elements such as Gallium, Indium, Zinc, Tin, Hafnium, Silicon, Aluminum, and others to optimize carrier concentration and mobility.

A thin-film transistor (TFT) including an oxide semiconductor layer, applicable to high-resolution flat panel display devices requiring high-speed driving, is disclosed, as well as a gate driver including the TFT and a display device including the gate driver. The TFT includes a first oxide semiconductor layer composed of indium gallium zinc tin oxide (IGZTO) and a second oxide semiconductor layer having indium gallium zinc oxide (IGZO). The gallium (Ga) to indium (In) content ratio (Ga / In) of the second oxide semiconductor layer is higher than that of the first oxide semiconductor layer (Ga / In), and the zinc (Zn) to In content ratio (Zn / In) of the second oxide semiconductor layer is higher than that of the first oxide semiconductor layer (Zn / In).

The application belongs to the technical field of polymer composites, and particularly relates to a sprayable conductive PPE / PA material, which is composed of polyphenylene ether, polyamide, styrene-maleic anhydride copolymer, silane functionalized zinc tin oxide nanowire, boron-nitrogen co-doped reduced graphene oxide-silver hybrid nanosheet, antioxidant and ethylene bis-stearamide. The application first prepares zinc metatitanate nanowire through a hydrothermal-calcination method, and obtains silane functionalized zinc tin oxide nanowire through surface functionalization of aminopropyl triethoxysilane. Meanwhile, the boron-nitrogen co-doped reduced graphene oxide-silver hybrid nanosheet is prepared through a hydrothermal co-doping-in-situ reduction method. The modified compounds are melt blended, extruded and granulated together with polyphenylene ether, polyamide, a compatibilizer and the like, and then a coating is obtained through melt spraying and solidification. The application adopts nanowire and nanosheet to synergistically enhance the conductive network, and the filler is firmly combined with the matrix interface, so that the obtained material has good conductivity and excellent sprayability.

This invention discloses a transparent zinc tin oxide (ZTO) electrothermal film comprising zinc oxide and tin oxide in a molar ratio of 6:4 to 8:2, with a film thickness of 50–200 nm. The film exhibits a transmittance ≥85% at 550 nm, a sheet resistance of 10–50 Ω / □, and resistivity changes of no more than 5% and 8% after 1000 h of energization at 100°C and 100 cycles at -40°C to 80°C, respectively. This invention also discloses a transparent electrothermal material containing this film, a method for preparing the material using roll-to-roll magnetron sputtering, and its application in transparent heating devices such as architectural glass, automotive windshields, electronic display panels, and medical equipment. This invention replaces expensive In with low-cost Zn / Sn, and through optimized target ratios, roll-to-roll sputtering in an oxygen-containing sputtering atmosphere, and an oxygen-containing atmosphere annealing process, achieves a balance between low cost, high electrothermal stability, high transmittance, and easy industrial mass production of the transparent electrothermal material.

The utility model relates to silicon oxide and titanium oxide based coated glass for indoor decoration. Comprising a glass substrate and a composite film layer, the composite film layer sequentially comprises a silicon nitride SiNx layer, a zinc oxide ZnOx layer, a metal silver Ag layer, a metal copper Cu layer, a metal nickel-chromium NiCr layer, a zinc oxide ZnOx layer, a silicon nitride SiNx layer, a zinc tin oxide ZnSnOx layer, a metal nickel-chromium NiCr layer, a metal silver Ag layer, a metal nickel-chromium NiCr layer and a silicon nitride SiNx layer from the glass substrate to the outside. According to the coated glass disclosed by the utility model, the film layer structure and thickness ratio of the barrier layer and the silver layer is reasonably optimized, and meanwhile, the new copper layer is introduced between the functional layer and the barrier layer, so that the glass is rich in color by adjusting the thickness of each film layer. Due to the existence of the barrier layer, the toughening property and better wear resistance of the double-silver glass are ensured, the subsequent processing difficulty is reduced, and the comprehensive high yield is improved. The existence of Cu enables the glass surface to present purple red, and meanwhile, the glass has a very good indoor home decoration effect due to relatively low reflectivity and relatively high transmittance.

The present invention discloses a semiconductor device and a manufacturing method thereof, wherein the semiconductor device includes a substrate, a metal oxide semiconductor layer, a first gate, a source electrode and a drain electrode. The material of the metal oxide semiconductor layer includes at least one of indium zinc oxide, indium tungsten oxide, indium tungsten zinc oxide, indium zinc tin oxide, indium gallium tin oxide and indium gallium zinc tin oxide. The metal oxide semiconductor layer includes a first doping region, a second doping region, a channel region located between the first doping region and the second doping region, a first crystal region located in the first doping region, and a second crystal region located in the second doping region. The crystallinity of the first crystal region and the second crystal region is greater than that of the channel region. The source electrode and the drain electrode are electrically connected to the first crystal region and the second crystal region, respectively.

The invention relates to the technical field of magnetron sputtering coating, and provides red three-silver low-emissivity glass. Comprising a base layer composed of silicon nitride and aluminum zinc oxide, a first functional layer silver layer, a first protective layer composed of aluminum oxide, a first intermediate dielectric layer composed of tin zinc oxide and aluminum zinc oxide, a second functional layer silver layer, a copper functional layer composed of metal copper and a second protective layer composed of nickel-chromium alloy. The first middle dielectric layer is composed of zinc tin oxide and zinc aluminum oxide, the second middle dielectric layer is composed of zinc tin oxide and zinc aluminum oxide, the third functional layer is a silver layer, the third protective layer is composed of nickel-chromium alloy, the protective layer is composed of zinc aluminum oxide and silicon nitride, and the anti-oxidation layer is composed of silicon-aluminum pickaxe. By controlling the thickness proportion of the silver functional layer and the copper functional layer of the second functional layer and the component proportion and thickness parameters of the two middle dielectric layers, it is guaranteed that the glass surface, the film surface and the angle color of the product are reddish and colorless through transmission, the diversified color requirements of the building facade are met, and the building aesthetics value is improved.

The application provides an electron transport layer for a perovskite solar cell, a perovskite solar cell and a preparation method thereof. The electron transport layer for the perovskite solar cell comprises an oxide layer and a zinc tin oxide layer. The oxide layer is a metal oxide layer, and the zinc tin oxide layer is deposited on one side surface of the oxide layer. The electron transport layer is formed by combining the oxide layer and the zinc tin oxide layer. The metal oxide layer can promote interface electron extraction, and the zinc tin oxide layer can guarantee high-speed electron transmission. The electron transport layer can jointly inhibit charge recombination, provide a more stable interface environment for a perovskite layer, ensure the stability of the perovskite solar cell, and improve photoelectric conversion efficiency.

The invention belongs to the technical field of glass deep processing, and particularly relates to middle-transmission low-reflection double-silver low-radiation coated glass which comprises a glass substrate layer and a coating layer, the coating layer comprises sixteen film layers which are sequentially compounded from the glass substrate layer to the outside, the first layer is a silicon zirconium nitride layer, the second layer is a titanium oxide layer, and the third layer is a zinc tin oxide layer. The fourth layer is an aluminum zinc oxide layer, the fifth layer is a silver layer, the sixth layer is a nickel-chromium layer, the seventh layer is a tin zinc oxide layer, the eighth layer is an aluminum silicon nitride layer, the ninth layer is the nickel-chromium layer, the tenth layer is an aluminum silicon nitride layer, the eleventh layer is a tin zinc oxide layer, the twelfth layer is an aluminum zinc oxide layer, the thirteenth layer is a silver layer, and the fourteenth layer is the nickel-chromium layer. The fifteenth layer is a silicon aluminum nitride layer, and the sixteenth layer is a zirconium oxide layer. The invention has the advantages of low reflectivity, capability of being processed in different places, good durability and the like.

The invention relates to a preparation method of an inverter based on a zinc tin oxide thin film transistor, and relates to the technical field of integrated circuits. According to the invention, preparation of a load tube (depletion mode transistor) and a driving tube (enhancement mode transistor) is adopted, and independent adjustment of threshold voltage of the load tube and the driving tube is realized through thickness control in the preparation process of ZTO thin film active layers of the load tube and the driving tube, so that the threshold voltage of the driving tube is a positive value, and the threshold voltage of the load tube is a negative value; and thus, the oxide-based depletion type load inverter is formed. According to the preparation method, the used ZTO thin film transistor has good electron mobility and stability, and high-performance inverter operation can be provided. Due to the characteristics of the ZTO material, the inverter may have relatively low power consumption during operation, which is very important for application of mobile equipment, Internet of Things equipment and the like. The ZTO thin film transistor allows the threshold voltage to be adjusted by adjusting preparation process parameters, which makes the inverter design more flexible.

The invention relates to the field of magnetron sputtering coating target material powder processing, and particularly discloses a method for preparing TZO powder through a plasma spheroidizing process. The method for preparing the TZO powder through the plasma spheroidizing process comprises the following steps that S1, zinc oxide powder and tin oxide powder are mixed and subjected to ball milling, and pretreated zinc-tin oxide mixed powder is prepared; s2, the prepared pretreated zinc tin oxide mixed powder is subjected to alkali washing, water washing and drying, and zinc tin oxide mixed powder is prepared; s3, the prepared zinc tin oxide mixed powder is subjected to plasma spheroidizing treatment under the condition that the temperature ranges from 2000 DEG C to 2300 DEG C, cooling is conducted, and TZO powder is prepared; according to the preparation technology, through the preparation technology that ball milling and alkali washing are matched with plasma spheroidizing, the prepared TZO powder has the good sphericity degree and uniformity, and the good flatness and compactness are achieved when the TZO powder is applied to the zinc tin oxide target material.

The invention belongs to the technical field of target materials, and particularly discloses an AITZO target material, a preparation method thereof and application of the AITZO target material in preparation of a solar cell. The aluminum oxide, the indium oxide, the zinc oxide and the tin oxide are combined, the aluminum oxide is added on the basis of the ITZO (indium zinc tin oxide), the aluminum oxide can form nano AITZO, and the material is a transparent conductive material with good conductivity, high-temperature stability and anti-radiation performance; the preparation method comprises the following steps: uniformly mixing mixed powder, dodecylbenzene sulfonic acid and a titanate coupling agent, uniformly mixing tin fluoride, silver particles and polyvinylpyrrolidone, doping the silver particles and a fluorine element into a system, and doping the fluorine element and the silver particles can regulate the lattice constant, the electron concentration and the crystal defect of the material and improve the stability; the compactness and the uniformity of the target material are improved, so that the photoelectric property of the AITZO target material is effectively improved.

Low emissivity films have a substrate layer and a multi-layer construction disposed on the substrate layer. The multi-layer construction has (layer 1) a poly-5 (meth)acrylate layer, (layer 2) a silicon compound layer, (layer 3) a zinc tin oxide layer, (layer 4) a reflective metal layer of silver or a silver alloy, (layer 5) a zinc tin oxide layer, (layer 6) a silicon compound layer, and (layer 7) a radiation-cured hardcoat layer with a thickness of from 350 to 1,200 nanometers. The hardcoat layer is either a poly- (meth)acrylate, a polyurethane, or a multi-layer construction comprising a 0 poly(meth)acrylate-based sublayer and a polyolefin-based sublayer, The film has an emissivity of less than 0.3, and the film is scratch resistant and corrosion resistant.

The invention discloses a FeFET transistor and a related integrated circuit. The channel layer of the transistor (1612a) may be formed of an amorphous oxide semiconductor. Examples of amorphous oxide semiconductors that can be utilized include indium oxide, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), cadmium oxide, hafnium indium zinc oxide (HIZO), tin oxide, and indium tin zinc oxide (ITZO), etc. The amorphous oxide semiconductor channel layer may also be doped with elements such as gallium, indium, zinc, tin, hafnium, silicon, aluminum to optimize carrier concentration and mobility.

The invention relates to the technical field of magnetron sputtering coating, and provides neutral-color high-transmittance three-silver low-emissivity glass with a copper-added film surface. A film system structure comprising a base coat, three silver functional layers, a dielectric layer composed of aluminum oxide, zinc tin oxide and zinc aluminum oxide and a plurality of protective layers is sequentially deposited on the surface of a glass substrate according to the process thickness requirement through a magnetron sputtering coating process, so that a product of which the film surface is neutral and the transmission color is not greenish is obtained. Particularly, a copper functional layer with a specific thickness is additionally arranged on one silver functional layer, and meanwhile, the thicknesses of the three nickel-chromium protective layers for protecting the silver functional layers are set to be critical low points, so that the defect that the transmission color of an existing three-silver glass product is slightly green is overcome through the structure, and meanwhile, the visible light transmission rate of single glass exceeds 69%; and the performance balance that the hollow shading coefficient is as low as 0.35 is achieved.

Provided is a transparent indium zinc tin oxide (IZTO) electrode with a PANI:PSS interlayer, wherein the PANI:PSS interlayer is formed on an upper surface of an IZTO film. Accordingly, it is possible to manufacture a transparent IZTO electrode with improved mechanical stability by forming a PANI:PSS interlayer to prevent fractures in the inorganic IZTO layer, thereby significantly improving the retention rate of the initial average visible transmittance (AVT) even after bending cycles and reducing sheet resistance.

The invention relates to the field of magnetron sputtering coating target material powder processing, and particularly discloses a method for preparing TZO powder through a plasma spheroidizing process. The method for preparing the TZO powder through the plasma spheroidizing process comprises the following steps that S1, zinc oxide powder and tin oxide powder are mixed and subjected to ball milling, and pretreated zinc-tin oxide mixed powder is prepared; s2, the prepared pretreated zinc tin oxide mixed powder is subjected to alkali washing, water washing and drying, and zinc tin oxide mixed powder is prepared; s3, the prepared zinc tin oxide mixed powder is subjected to plasma spheroidizing treatment under the condition that the temperature ranges from 2000 DEG C to 2300 DEG C, cooling is conducted, and TZO powder is prepared; according to the preparation technology, through the preparation technology that ball milling and alkali washing are matched with plasma spheroidizing, the prepared TZO powder has the good sphericity degree and uniformity, and the good flatness and compactness are achieved when the TZO powder is applied to the zinc tin oxide target material.

This invention relates to the field of photocatalytic materials technology, and discloses a bromine-modified zinc tin oxide photocatalyst, its preparation method, and its application. The method includes dissolving L-tryptophan, SnCl4·5H2O, and Zn(Ac)2·2H2O in deionized water to obtain a first mixture; adding NaBr to the first mixture to obtain a second mixture; adding anhydrous sodium carbonate to the second mixture and then carrying out a hydrothermal reaction; and centrifuging, washing, and drying the product after the hydrothermal reaction to obtain the target catalyst. This invention introduces NaBr into the synthesis system, promoting the entry of bromine into the crystal interior, inducing lattice contraction and a reduction in interplanar spacing. This change in microstructure shortens the internal charge transport path and improves the charge separation efficiency of the photocatalyst. Combined with L-tryptophan to control the reaction rate, this ultimately enhances the photocatalytic degradation rate of volatile organic compounds.

The invention relates to a method for preparing a low-resistivity zinc tin oxide target material by adopting a spraying process, which comprises the following steps of: mixing zinc oxide and tin oxide according to a weight ratio of 52: 48, adding the mixture into a modification liquid which is 5-7 times of the total amount of zinc oxide, stirring and modifying, and then washing and drying to obtain a modified zinc tin body; a ball milling agent accounting for 10-15% of the total amount of the modified zinc-tin body is added into the modified zinc-tin body, the ball milling rotating speed ranges from 1000 r / min to 1500 r / min, ball milling is conducted for 1 h, after ball milling is finished, suction filtration and drying are conducted, and a ball milling body is obtained; the preparation method is used for preparing the low-resistivity zinc tin oxide target material, accurate control over the top coating in the preparation process is achieved, the important application value is achieved, the modification liquid stirring improvement is combined with ball milling agent treatment, a sodium alginate solution in the modification liquid is matched with a chitosan solution and a lanthanum chloride solution, and the stability of the coating is improved. And the interfacial property and connectivity between the raw materials are optimized.

The invention relates to the technical field of perovskite light-emitting device preparation, in particular to a zinc-tin-oxygen ternary oxide film and a preparation method and application thereof. The preparation method of the zinc-tin-oxygen ternary oxide thin film comprises the following steps: A) preparing a SnO2 nano thin film through a solution spin-coating method: spin-coating a substrate with a hydrocolloid dispersion liquid of tin dioxide or a tin salt solution, and annealing to form the SnO2 nano thin film; b) spin-coating a zinc oxide precursor solution on the surface of the SnO2 nano film, and annealing to form a SnO2 / ZnO laminated film; the zinc oxide precursor solution comprises zinc salt and amino alcohol; and C) sintering the SnO2 / ZnO laminated film at a high temperature to form the zinc-tin-oxygen ternary oxide film. The zinc-tin-oxygen ternary oxide electron transport layer film can prevent fluorescence quenching of a perovskite layer while inhibiting an interface deprotonation reaction, so that an efficient and stable perovskite light-emitting diode device is prepared.

There is provided a display device including a base layer and a pixel defining film on the base layer and having a light emitting opening defined therein. The display device further includes a barrier rib including a first barrier rib layer on the pixel defining film and a second barrier rib layer on the first barrier rib layer. The barrier rib includes a barrier rib opening defined in the barrier rib and overlapping the light emitting opening. The display device further includes a light emitting element overlapping the light emitting opening, and the light emitting element includes a first electrode, a light emitting pattern on the first electrode and emitting light, and a second electrode on the light emitting pattern. The display device further includes an auxiliary electrode on the second electrode, and the auxiliary electrode includes a lower auxiliary electrode having indium zinc tin oxide and an upper auxiliary electrode having indium tin oxide.