66 results about "Zinc tin oxide" patented technology

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

A substrate bearing a low-emissivity coating, the coating comprising two infrared-reflective layers separated by a middle coat, the middle coat comprising two zinc tin oxide film regions separated by a tin oxide film region.

A substrate bearing a low-emissivity coating, the coating comprising two infrared-reflective layers separated by a middle coat, the middle coat comprising two zinc tin oxide film regions separated by a tin oxide film region.

The present invention provides is a method of making an infrared reflective coated article, including the steps of: providing a substrate; depositing a first dielectric layer over at least a portion of the substrate, the layer comprising a first zinc stannate film deposited over the substrate, and an electrical enhancing film deposited over the first zinc stannate film, the electrical enhancing film selected from zinc oxide-tin oxide film and a second zinc stannate film; forming an infrared reflective layer on the first dielectric layer; forming a metal primer layer over the infrared reflective layer; forming a second dielectric layer over the primer layer; and forming a protective layer of at least two films in a position where it can provide durability to the dielectric layer, infrared reflective layer, metal primer layer, and second dielectric layer.

The present invention relates to a process of preparing zinc-tin composite transparent conductive oxide films ZnxSnyOz superior in light transmission, interfacial adhesion strength and electric conductivity by an organic chemical deposition method by using an electron cyclotron resonance (ECR).Zinc-tin oxide film composite ZnxSnyOz (x=1, y=8.7, Z=12) stably prepared by an electron-cyclotron chemical vapor deposition according to the present invention is superior to ZnSnO3 and Zn2SnO4 prepared by a physical deposition method in electric conductivity, thereby being applicable in a wide range of electric appliances including a heating element.

The invention discloses a technology for high-transmittance, high-performance and low-emissivity glass. According to the technology, a glass substrate is provided, and a silicon nitride dielectric layer, a zinc oxide dielectric layer, a silver functional layer, a nickel-chromium alloy target alloy layer and a two-layer composite dielectric layer comprising a zinc tin antimony oxide layer and a silicon nitride layer are sequentially coated on the glass substrate. According to the technology for the high-transmittance, high-performance and low-emissivity glass, a multilayer film layer structure which is high in reflectivity to an infrared region and low in absorption property to near infrared and far infrared is coated on the surface of the glass substrate by an offline megnetron sputtering technology and at least comprises the silver functional layer capable radiating the sunshine; the high-transmittance, high-performance and low-emissivity glass has the characteristics of flexibility in adjustment of transmittance, absorption and reflection values and can effectively reduce the emissivity rate of the glass and increase the glass thermal resistance; furthermore, the required color and the required sunshade coefficient can be obtained. Moreover, the visible transmittance and the photothermal selectivity of the glass substrate surface can be effectively improved.

The invention discloses a flexible nanofiber zinc tin oxide field effect transistor and a preparation method thereof. The flexible nanofiber zinc tin oxide field effect transistor comprises a top source electrode layer, a top drain electrode layer, a carrier channel layer of a nanofiber structure, a dielectric layer, a bottom gate electrode layer and a substrate which are arranged from top to bottom, wherein the carrier channel layer of the nanofiber structure is a zinc tin oxide filament cluster which is prepared by a sol method and has the diameter of about 100-300 nm. The preparation methodcomprises the following steps of: a) cleaning the substrate; b) preparing the bottom gate electrode layer, c) preparing a hafnium oxide dielectric layer, d) preparing a carrier channel layer with a nanofiber structure, and e) preparing a top source electrode layer and a top drain electrode layer. According to the scheme, the nanofiber (NF) filaments are prepared by adopting a sol method, the operation is simple and convenient, the distribution and direction are easy to control, the cost is low, the uniformity is relatively high, and large-scale industrial application can be realized; the advantages of environmental protection, high mobility and the like are achieved; the method can be applied to the field of flexible wearable circuits; and the whole device is transparent, and has good application potential in the optical field.

A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.

A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

In certain embodiments, the present disclosure relates to low-E films and articles comprising the same. Other embodiments relate to methods of reducing the emissivity of an article comprising the use of low emissivity films. In some embodiments, the low emissivity film includes a metal layer and a pair of layers, one layer comprising a metal oxide such as zinc tin oxide and the other layer comprising a silicon compound adjacent to each of two sides of the metal layer. This type of assembly can be used for a variety of purposes, including as a solar insulation film. These constructions are useful, for example, as window films on glazing units for reducing the trans-film transmission of infrared radiation in both directions.