Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation technology of ZnSnOx ceramic target and method for preparing ZnSnOx coated film by using same

A zinc tin oxide and preparation process technology, applied in metal material coating process, sputtering plating, ion implantation plating and other directions, can solve the problems of poor sputtering process stability, negative impact on physical and chemical properties, Ag layer oxidation, etc. To achieve the effect of strong sputtering voltage stability, easy process and strong film adhesion

Inactive Publication Date: 2014-10-08
林嘉佑
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially, for the technical field of large-area coated glass, when depositing the above-mentioned zinc-tin oxide film, the flow of oxygen is too large, which will easily lead to the oxidation of the Ag layer as the infrared reflection function layer under the condition of rich oxygen; when the flow of oxygen is insufficient, in In the case of oxygen deficiency, the stability of the sputtering process will be poor, such as large fluctuations in voltage, and the obtained film is a non-stoichiometric zinc-tin oxide film
More seriously, the obtained film is in a metallic state, which has a great negative impact on the thermal performance, appearance quality, and physical and chemical properties of glass coated products.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation technology of ZnSnOx ceramic target and method for preparing ZnSnOx coated film by using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The zinc-tin oxide thin film prepared by using the zinc-tin oxide ceramic target of the present invention can be applied in low-radiation coating products of Sanyinke steel. The specific film structure is:

[0039] Glass / Si 3 N 4 / AZO / NiCr / Ag / NiCr / AZO / ZnSnOx / AZO / NiCr / Ag / NiCr / AZO / ZnSnOx / AZO /

[0040] NiCr / Ag / NiCr / AZO / Si 3 N 4 .

Embodiment 2

[0042] The zinc-tin oxide thin film prepared by using the zinc-tin oxide ceramic target of the present invention can be applied to double-silver steel low-radiation coating products. The specific film structure is:

[0043] Glass / Si 3 N 4 / AZO / NiCr / Ag / NiCr / AZO / ZnSnOx / AZO / NiCr / Ag / NiCr / AZO / Si 3 N 4 .

[0044]In summary, when the zinc-tin oxide ceramic target of the present invention is applied to the magnetron sputtering coating process to prepare a zinc-tin oxide film with a certain stoichiometric ratio, in an argon atmosphere, there is no need to feed oxygen, or the Zinc tin oxide thin film can be obtained by introducing oxygen with an oxygen flow rate of any value from 0 to 150 sccm. The zinc tin oxide film layer obtained by depositing zinc tin oxide ceramic target on the glass substrate has a uniform particle size. , The sputtering voltage is stable, the process is easy to control, the film layer has strong bonding force, and the film layer is compact.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a ZnSnOx ceramic target which is characterized by being prepared by mixing zinc oxide powder the purity of which is 99.99 and tin oxide powder the purity of which is 99.99, wherein the mass percent of the zinc oxide powder to tin oxide powder is any one of (6:4)-(7:3). The invention further provides a preparation technology of the ZnSnOx ceramic target, and a method for preparing ZnSnOx coated film by using the ZnSnOx ceramic target. The prepared ZnSnOx thin film is pure, uniform in particle size, strong in the stability of sputtering voltage, the technology is easy to control, and the film layer is strong in binding power, and good in compactness, and can be applied into a low-radiation coated film glass under the oxygen-free condition.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering coated glass manufacturing, in particular to a preparation process of a zinc-tin oxide ceramic target and a method for preparing a zinc-tin oxide coating film using the target. Background technique [0002] In the field of magnetron sputtering coating, traditional zinc-tin oxide films are plated in argon and oxygen atmospheres through zinc-tin alloy targets. In order to obtain a stoichiometric zinc-tin oxide thin film, in actual process control, it is difficult to control the flow rate of oxygen. Especially, for the technical field of large-area coated glass, when depositing the above-mentioned zinc-tin oxide film, the flow of oxygen is too large, which will easily lead to the oxidation of the Ag layer as the infrared reflection function layer under the condition of rich oxygen; when the flow of oxygen is insufficient, in In the case of oxygen deficiency, the stability of the sputter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/08
Inventor 林嘉佑
Owner 林嘉佑
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products