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Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof

A thin film transistor, zinc tin oxide technology, applied in transistors, semiconductor/solid-state device manufacturing, metal material coating process, etc., can solve the problem of low carrier mobility and achieve the effect of large carrier mobility

Active Publication Date: 2014-01-15
KUNSHAN VISIONOX DISPLAY TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem solved by the present invention is the problem that the carrier mobility of the thin film transistor formed by the zinc tin oxide thin film prepared by using 2-ethylhexanoate as the precursor material of tin in the prior art is relatively low, and further provides a A kind of solution method prepares the method for zinc tin oxide thin film

Method used

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  • Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof
  • Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof
  • Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof

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Experimental program
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Effect test

Embodiment 1-1

[0049] Embodiment 1-1, the method for preparing zinc tin oxide thin film with spin coating method is as follows:

[0050] (1) Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of precursor materials zinc acetate (white powder), 2-ethylhexanoate stannous (yellow transparent liquid), add co-solvent Ethanolamine, dissolved in ethylene glycol monomethyl ether. Stir well, generally takes 2 hours, until completely dissolved. Standing for use, the molar ratio of zinc acetate, stannous 2-ethylhexanoate, and ethanolamine is 1:1:3. The total molar concentration of zinc acetate (white powder) and stannous 2-ethylhexanoate is 0.45mol / L.

[0051] (2) Film preparation by spin coating: Spin coating is performed in a dust-free atmosphere. The rotation speed is 2000rpm, and the rotation time is 20s. According to the thickness of the required film, the rotation speed can be adjusted between 2000rpm and 4000rpm, and the ...

Embodiment 2-1

[0071]Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of zinc precursor materials zinc nitrate, 2-ethyl stannous hexanoate (yellow transparent liquid), add co-solvent diethanolamine, dissolve in solvent Propylene Glycol Monomethyl Ether. Stir well, generally takes 2 hours, until completely dissolved. Stand still for use, the molar ratio of the precursor of zinc, stannous 2-ethylhexanoate, co-solvent, and solvent is 1:1:5, the total molar concentration of the precursor material is 0.5mol / L, and the heat treatment procedure is: heating The rate is 30°C / min, and the wet film after spin coating is directly placed on a heating table heated to 150°C, and the temperature is raised at a constant rate of 30°C / min until it reaches 400°C, and heated at a constant temperature for 45 minutes. Naturally cool to room temperature. The preparation of zinc tin oxide thin film is completed.

[0072] The heating rate of...

Embodiment 3-1

[0076] Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of zinc precursor materials zinc chloride, 2-ethylhexanoate tin (yellow transparent liquid), add co-solvent triethanolamine, dissolve in solvent butanediol monomethyl ether. Stir well, generally takes 2 hours, until completely dissolved. Leave it to stand for use, the molar ratio of the precursor of zinc, 2-ethylhexanoate, and cosolvent is 1:1:7, the total molar concentration of the precursor material is 0.4mol / L, and the heat treatment program is: the heating rate is 30°C / min, the wet film after spin coating is directly placed on a heating table heated to 150°C, and the temperature is raised at a constant rate of 30°C / min until 500°C, and heated at a constant temperature for 50min. Naturally cool to room temperature. The preparation of zinc tin oxide thin film is completed.

[0077] The heating rate of Example 3-2 to Example 3-7 is 20, 40, 50, 6...

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Abstract

The invention discloses a preparation method for a zinc tin oxide thin film, which relates to the field of thin film transistors. The preparation method comprises the following steps: preparing a precursor solution by using tin(II) 2-ethylhexanoate as a precursor material of tin; then coating the precursor solution on a coating surface formed by an amorphous material so as to form a thin film; and finally, carrying out heat treatment, wherein a heating rate of 20 to 80 DEG C / min is adopted so as to obtain the zinc tin oxide thin film. The invention also provides the zinc tin oxide thin film prepared by using the preparation method, a thin film transistor using the zinc tin oxide thin film as a semiconductor layer and a preparation method for the thin film transistor. According to the invention, the problem of low carrier mobility of the thin film transistor formed by the zinc tin oxide thin film prepared with tin(II) 2-ethylhexanoate as the precursor material of tin in the prior art is overcome.

Description

technical field [0001] The present invention relates to the field of thin-film transistors, in particular to a method for preparing a zinc-tin oxide thin film by a solution method applied to transistors, an oxide semiconductor thin film prepared by the preparation method, and a thin-film transistor using the oxide semiconductor thin film. Including the preparation method of the thin film transistor. Background technique [0002] Compared with traditional amorphous silicon materials and organic semiconductor materials, oxide semiconductor materials have the advantages of high carrier mobility, transparency, thermal stability, environmental stability, easy availability of raw materials, and low preparation costs. And received much attention. In the past 10 years, the research on thin film transistors based on oxide semiconductor materials has made great technological progress. Some oxide semiconductor materials with excellent properties, such as indium gallium zinc oxide (IGZ...

Claims

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Application Information

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IPC IPC(8): C23C26/00H01L29/786H01L21/34
Inventor 邱勇赵云龙段炼
Owner KUNSHAN VISIONOX DISPLAY TECH
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