Schottky diode and manufacturing method thereof

Abstract

The invention discloses a Schottky diode and a manufacturing method thereof. The Schottky diode comprises a substrate, a buffer layer, an extension structure, a Schottky contact metal and an Ohmic contact metal, wherein the substrate the buffer layer and the extension structure are sequentially arranged in an overlapped structure; the extension structure comprises a super bonding layer, a GaN channel layer and a barrier layer which are sequentially stacked, and the super bonding layer is composed of a plurality of p-type GaN layer and a plurality of n-type GaN layer which are alternately stacked each other; the Schottky contact metal and the Ohmic contact metal are symmetrically arranged on the opposite two side surfaces of the extension structure, one ends of the Schottky contact metal and the Ohmic contact metal extend to the upper surface of the extension structure, and the other ends of the Schottky contact metal and the Ohmic contact metal extend to the buffer layer. The Schottky diode has relatively high pressure resistance, ensures current transmission capacity and stability and avoids a traditional field plate structure or protecting ring structure, thereby simplifying the manufacturing process and reducing the cost.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a Schottky diode and a manufacturing method thereof. Background technique [0002] In modern society, power electronics technology continues to update and develop, and power electronic devices such as voltage regulators, rectifiers, and inverters are more and more widely used in daily life, involving high-voltage power supply, power management, factory automation, and energy distribution management for motor vehicles. Many fields. [0003] Diodes are an integral part of power electronics applications. In recent years, Schottky diodes with high frequency, high current and low power consumption have attracted more and more attention due to their unique performance advantages. [0004] Traditional power Schottky diodes are mainly fabricated on silicon (Si)-based materials. The development of silicon materials has a long history, the cost of silicon single crystal preparation is low, and ...

AI Technical Summary

Problems solved by technology

[0010] First of all, the existing field plate structure, guard ring structure or super junction structure, because they are very close to the GaN heterojunction active region, and are usually fabricated by field plate technology and ion implantation technology, have an impact on the current transmission capability of the device. Larger, while improving the withstand voltage performance, it sacrifices the larger output characteristics of the device;

[0011] Secondly, these technical means do not make full use of the voltage-resistant potential of the overall epitaxial layer, and the space for further improvement of the voltage-resistant performance is very limited;

[0012] Thirdly, whether it is the field plate process or the ion implantation process, it increases the difficulty of maintaining stability in the device manufacturing process, and also increases the manufacturing cost of the device, which is not conducive to the promotion of industrialization

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