Rare earth doping Mg2Si based thermoelectric material

A technology of thermoelectric material and rare earth doping, which is applied in the direction of thermoelectric device junction lead wire material, etc., can solve the problem that the thermoelectric performance needs to be further improved, and achieve the effect of increasing the carrier concentration and improving the thermoelectric performance.

Inactive Publication Date: 2008-06-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Mg 2 Si thermoelectric material has the characteristics of abundant raw materials, low price, non-toxic and non-polluting, but its thermoelectric performance still needs to be further improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The raw materials (pure magnesium, pure silicon and pure lanthanum) are in stoichiometric ratio Mg 1.995 SiLa 0.005 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain La-doped Mg 1.995 SiLa 0.005 block samples.

Embodiment 2

[0015] The raw materials (pure magnesium, pure silicon and pure cerium) are in stoichiometric ratio Mg 1.998 SiCe 0.002 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain Ce-doped Mg 1.998 SiCe 0.002 block samples.

Embodiment 3

[0017] The raw materials (pure magnesium, pure silicon and pure praseodymium) are in stoichiometric ratio Mg 1.995 SiPr 0.005 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain Pr-doped Mg 1.995 SiPr 0.005 block samples.

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Abstract

The invention discloses a rare earth doping Mg2Si based thermoelectric material. The invention utilizes rare earth doping to improve thermoelectric properties of the material. Rare earth is directly added during melting, then the melted material is hot pressed after mechanical milling, and thermoelectric material blocks Mg2-xSiREx are obtained, in which RE represents rare earth element, and x equals to 0.002 to 0.01. The invention, the rare earth doping Mg2Si based thermoelectric material, has better thermoelectric properties than non-doping Mg2Si2 thermoelectric material; the doped rare earth elements comprises heavy rare earth and light rare earth; the mechanism is that rare earth elements have similar properties as alkaline earth metal; Mg is easily substituted after rare earth elements are added as donor doping, which increases carrier concentration and thus improves thermoelectric properties of the material.

Description

technical field [0001] The invention relates to thermoelectric materials, in particular to a kind of rare earth doped Mg 2 Si-based thermoelectric materials. technical background [0002] A thermoelectric material is a semiconductor material that directly converts electrical energy and thermal energy through the movement of carriers (electrons or holes). When there is a temperature difference between the two ends of the thermoelectric material, the thermoelectric material can convert heat energy into electrical energy output; or conversely, when a current is passed through the thermoelectric material, the thermoelectric material can convert electrical energy into heat energy, and one end releases heat while the other end absorbs heat. Thermoelectric materials have a wide range of application backgrounds in refrigeration or power generation. Power generation devices made of thermoelectric materials can be used as power sources for deep space spacecraft, field operations, ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/14C22C23/00
Inventor 赵新兵张倩朱铁军殷浩
Owner ZHEJIANG UNIV
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