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Cu-Ni thin film material for temperature sensing and preparation method of Cu-Ni thin film material

A kind of thin film material, cu-ni technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as difficult and precise regulation, and achieve temperature sensitivity improvement, precise size control, and excellent thermoelectric performance Effect

Active Publication Date: 2022-08-02
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the thickness of the film decreases, the thermal conductivity will drop significantly due to the interface scattering effect. When the thickness decreases to a certain level, the quantum confinement effect will appear, which will increase the Seebeck coefficient. However, due to the scattering of electrons, the electrical conductivity and power will be reduced. factor, so the optimization of film thickness still needs to be solved; in addition, defects including pore structure can promote the increase of Seebeck coefficient and the decrease of thermal conductivity, but the existing defect preparation methods are difficult to be based on electron and phonon The mean free path achieves precise control of defect morphology

Method used

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  • Cu-Ni thin film material for temperature sensing and preparation method of Cu-Ni thin film material

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Effect test

Embodiment 1

[0038] Embodiment 1: The present invention provides a method for preparing a Cu70Ni30 thin film material for temperature sensing, comprising the following steps:

[0039] Cu-Ni thin films were deposited on Si-based substrates by high-vacuum magnetron sputtering double-target co-deposition.

[0040] The method for depositing a Cu-Ni thin film on a substrate includes: placing a Cu target and a Ni target with polished surfaces on two sputtering target positions of a high-vacuum magnetron sputtering system, wherein the Cu target is connected to a radio frequency power supply, and the Ni target is connected to a radio frequency power supply. Connect the DC power supply; fix the substrate on the sample stage of the magnetron sputtering equipment, and the distance between the substrate and the target is 50-90mm. Close the magnetron sputtering reaction chamber and perform vacuum pumping; the vacuum degree of the sputtering chamber is not less than 1×10 -4 Pa, pass argon gas at a flow...

Embodiment 2

[0041] Embodiment 2: The present invention provides a method for preparing a Cu70Ni30 thin film material for temperature sensing, comprising the following steps:

[0042] Cu-Ni thin films were deposited on Si-based substrates by high-vacuum magnetron sputtering double-target co-deposition.

[0043]The method for depositing a Cu-Ni thin film on a substrate includes: placing a Cu target and a Ni target with polished surfaces on two sputtering target positions of a high-vacuum magnetron sputtering system, wherein the Cu target is connected to a radio frequency power supply, and the Ni target is connected to a radio frequency power supply. Connect the DC power supply; fix the substrate on the sample stage of the magnetron sputtering equipment, and the distance between the substrate and the target is 50-90mm. Close the magnetron sputtering reaction chamber and carry out the vacuum pumping operation; the vacuum degree of the sputtering chamber is not less than 1×10 -4 Pa, pass argo...

Embodiment 3

[0044] Embodiment 3: The present invention provides a method for preparing a Cu70Ni30 thin film material for temperature sensing, comprising the following steps:

[0045] (1) Using high vacuum magnetron sputtering double target co-deposition to deposit Cu-Ni thin film on Si-based substrate;

[0046] (2) A hole array is etched on the Cu-Ni film by electron beam exposure.

[0047] In this example, step (1) includes: placing the polished Cu target and Ni target on the two sputtering target positions of the high vacuum magnetron sputtering system, wherein the Cu target is connected to the radio frequency power supply, and the Ni target is connected to the DC power supply ; Fix the substrate on the sample stage of the magnetron sputtering equipment, and the distance between the substrate and the target is 50-90mm. Close the magnetron sputtering reaction chamber and carry out the vacuum pumping operation; the vacuum degree of the sputtering chamber is not less than 1×10 -4 Pa, pas...

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Abstract

The invention discloses a Cu-Ni thin film material for temperature sensing and a preparation method of the Cu-Ni thin film material. A Cu-Ni thin film is deposited on a Si-based substrate, a hole array is etched in the Cu-Ni thin film, and the Cu-Ni thin film material for temperature sensing is obtained. According to the method, the technical problems of thin film thickness optimization and defect controllable preparation are solved, and the temperature sensing sensitivity and thermoelectric performance of the thin film are improved.

Description

technical field [0001] The invention relates to a thermoelectric thin film material and a preparation method, in particular to a Cu-Ni thin film material for temperature sensing and a preparation method. Background technique [0002] Temperature sensors based on thermal resistance and infrared thermometers have defects such as too long response time, and it is difficult to meet the temperature measurement under rapidly changing conditions. The temperature sensing based on the thermoelectric effect (Seebeck effect) has the advantages of rapid response and no interference from stress and other factors, and has broad application prospects in temperature monitoring and electronic skin. [0003] Cu-Ni alloy has the advantages of good mechanical properties, high temperature thermal stability, low price, etc., and is widely used in the field of thermocouples. When the film thickness decreases, the thermal conductivity will decrease greatly due to the interface scattering effect. W...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/35C23F1/02C23C14/58C23F1/30
CPCC23C14/352C23C14/165C23F1/02C23C14/5873C23F1/30
Inventor 朱蓓蓓吕鹏飞温传彬王哲涵陈佳熠徐骁唐雪昊薛烽白晶陶立
Owner SOUTHEAST UNIV
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