35 results about "Indium zinc oxide" patented technology

Disclosed herein is a FeFET transistor and related integrated circuits. The channel layer of the transistor (1612a) may be formed from an Amorphous Oxide Semiconductor. Examples of amorphous oxide semiconductors that could be utilized include Indium Oxide, Indium Gallium Zinc Oxide (IGZO), Zinc Tin Oxide (ZTO), Indium Zinc Oxide (IZO), Gallium Zinc Oxide (GZO), Aluminum Zinc Oxide (AZO), Cadmium Oxide, Hafnium Indium Zinc Oxide (HIZO), Tin Oxide, and Indium-Tin-Zinc Oxide (ITZO), among others. The amorphous oxide semiconductor channel layer may also be doped with elements such as Gallium, Indium, Zinc, Tin, Hafnium, Silicon, Aluminum, and others to optimize carrier concentration and mobility.

The application belongs to the technical field of semiconductors, and discloses a preparation method of a large-size indium zinc oxide target material, which comprises the following steps: step 1, sintering an indium zinc oxide target blank at 600-800 DEG C; step 2, placing two or more indium zinc oxide target blanks treated in step 1 side by side, with a gap between the two adjacent indium zinc oxide target blanks; step 3, injecting a thermoplastic slurry into the gap, wherein the slurry contains indium zinc oxide powder; and step 4, sintering at 1500-1600 DEG C to obtain the indium zinc oxide target material. The method uses a thermoplastic slurry as a bonding material, and the target blank is sintered at a low temperature before bonding, so that the target material particles can be preliminarily combined to prevent the target material from collapsing, and the target material can be sintered at a high temperature after bonding to obtain a large-size indium zinc oxide target material with a high qualification rate. Meanwhile, the application also provides the large-size indium zinc oxide target material.

Disclosed herein is a method including: for i=1, …, M, collecting with a charge collecting module (i) a first charge and a second charge from a sensing element (i) of a radiation detector respectively throughout a first charge collection time period and a second charge collection time period; and for each value of i, determining a final value (i) of a picture element (i) of a same final image based on the first charge and the second charge. These time periods do not overlap. The radiation detector has a radiation absorption layer and an electronics layer. The radiation absorption layer includes the sensing elements. The electronics layer includes the charge collecting modules. The electronics layer has read switches corresponding to the charge collecting modules. When one of the read switches is closed, it electrically connects the corresponding charge collecting module to a charge measuring system. Each of the read switches has an IZO transistor.

Methods of forming a magnesium indium zinc oxide (MIZO) layer by vapor deposition are provided. In some embodiments, a cyclic deposition process for forming a MIZO layer includes a deposition cycle including alternately and sequentially contacting a substrate with a vapor-phase indium precursor, a vapor-phase zinc precursor, a vapor-phase magnesium precursor, and an oxygen reactant in a reaction chamber.

The present application relates to a method for preparing a transparent conductive target material and a thin film circuit for a copper electroplating process, including preparing an indium tin oxide, indium zinc oxide or indium tin zinc oxide target material and a corresponding silver-containing indium tin oxide, silver-containing indium zinc oxide or silver-containing indium tin zinc oxide target material by means of slurry injection molding and medium-high temperature sintering, and reducing the sintering temperature by adding silver oxide powder or pure silver powder to improve the density and conductivity of the target material; placing a glass substrate or an N-type silicon wafer that has completed the PECVD process, as well as the target material and the corresponding silver-containing target material into a vacuum sputtering machine, coating at room temperature to form an electroplated copper multilayer thin film structure, and performing a yellow light process and an etching process to form a copper metal grid line to complete the production of a thin film circuit. The present invention can realize the sputtering of the target material and the traditional transparent conductive film target material on the same sputtering machine, and can meet the performance requirements of copper electroplating metalization of heterojunction cells and heterojunction perovskite stacked cells.

A display device includes a base layer including an upper base layer and a lower base layer on a rear surface of the upper base layer; at least one light emitting element on a surface of the upper base layer; and at least one pad on the rear surface of the upper base layer and including a first pad layer adjacent to the upper base layer and a second pad layer adjacent to the lower base layer. The second pad layer includes indium zinc oxide (IZO).

The present invention discloses a semiconductor device and a manufacturing method thereof, wherein the semiconductor device includes a substrate, a metal oxide semiconductor layer, a first gate, a source electrode and a drain electrode. The material of the metal oxide semiconductor layer includes at least one of indium zinc oxide, indium tungsten oxide, indium tungsten zinc oxide, indium zinc tin oxide, indium gallium tin oxide and indium gallium zinc tin oxide. The metal oxide semiconductor layer includes a first doping region, a second doping region, a channel region located between the first doping region and the second doping region, a first crystal region located in the first doping region, and a second crystal region located in the second doping region. The crystallinity of the first crystal region and the second crystal region is greater than that of the channel region. The source electrode and the drain electrode are electrically connected to the first crystal region and the second crystal region, respectively.

This invention proposes a low-cost, high-efficiency co-sputtering technique for magnesium-hydrogen co-doped indium zinc oxide (IZO) thin-film transistors and their fabrication methods. The device is fabricated using heavily doped N-type silicon and silicon dioxide as the gate and insulating layer, respectively. A magnesium-doped IZO semiconductor channel layer is deposited using a dual-target co-sputtering method followed by hydrogen plasma treatment. Aluminum is then deposited as the electrode using DC sputtering. All deposition processes are patterned using a mask, ultimately resulting in a high-performance magnesium-hydrogen co-doped IZO thin-film transistor. This invention improves IZO defects and controls oxygen vacancy concentration by doping magnesium with an appropriate atomic concentration using dual-target co-sputtering. Hydrogen plasma treatment is used to modulate the interface defect states and carrier transport characteristics. This fabrication process not only offers advantages such as high efficiency and low cost, but also produces devices with high carrier mobility and good stability, providing a technical reference for optimizing low-cost and high-efficiency new co-doping processes.

A nucleic acid sensing electrode comprising at least one electrically conductive layer 101 comprising a surface, a nano porous layer 102 made of a non-electrically conductive material which is chemically bonded to the surface of the electrically conductive layer, and at least one single stranded nucleic acid probe 103 attached to the nano porous layer. The electrically conductive layer can comprise an inorganic oxide e.g., fluorine doped tin oxide, indium tin oxide or indium zinc oxide. The nano porous layer can comprise an interconnected network of nanopores with diameters of 5 nm to 100 nm. The nano porous layer can be fabricated using a sol-gel material. A further aspect is a nucleic acid sensing device comprising the electrode and at least a second electrode configured to contact a test liquid. The second electrode can be a counter electrode. The device can have a third electrode which is a reference electrode. The device can comprise a measurement unit configured to record changes in the electrochemical signal. A further aspect is a method of detecting nucleic acids in a sample using the device comprising measuring a baseline electrochemical signal, introducing a liquid sample to be tested, and measuring changes in electrochemical signal.

The application belongs to the technical field of semiconductors, and discloses a method for improving oxygen vacancies of a target material through ultrasonic assistance, which comprises the following steps: step 1: placing an indium zinc oxide target material precursor in a vacuum environment and a reducing atmosphere to sinter at a first temperature to obtain a semi-finished product; step 2: ultrasonic cleaning the semi-finished product obtained in step 1; and step 3: drying the semi-finished product obtained in step 2 after ultrasonic cleaning, and then sintering in a vacuum environment and a reducing atmosphere at a second temperature to obtain a finished product; the first temperature is lower than the second temperature; and the first temperature is at least 400 DEG C higher than the fat removal temperature. The method can make the atomic structure of the target material surface change through one sintering in a reducing atmosphere and then ultrasonic treatment, so that oxygen atoms are relatively easy to be removed during the second sintering, and then a satisfactory oxygen vacancy degree can be obtained during the second sintering. Meanwhile, the application also provides an indium zinc oxide target material.

The application discloses a kind of multi-element oxide doped indium zinc oxide target material and preparation method and application thereof, and the doped indium zinc oxide target material of the application includes the following mass percentage components: the content of indium oxide is 80.0%~88.6%;The content of zinc oxide is 10.9%~15.8%, the content of strontium oxide is 0.2%~1.8%, the content of bismuth oxide is 0.2%~0.6%, the content of vanadium oxide is 0.4%~1.2%, and the sum of each component is 100%.The target material is prepared by adding strontium oxide, bismuth oxide and vanadium oxide powder, mixing ball milling, pressing forming and sintering, the density of the target material is improved, the resistivity of the target material is reduced, the grain size of the sintered target material is uniform, the strength of the target material is improved, and the performance of the target material is effectively improved.The electrical stability of the thin film and the thin film mobility are effectively improved by sputtering the prepared multi-element oxide doped IZO target material.

The invention provides a top transparent electrode for a perovskite / silicon heterojunction laminated cell and a preparation method of the top transparent electrode, and belongs to the technical field of solar cells. The top transparent electrode comprises an ITO (Indium Tin Oxide) buffer layer, an ITO functional layer arranged on the ITO buffer layer and an IZO (Indium Zinc Oxide) functional layer arranged on the ITO functional layer; the magnetron sputtering power adopted for preparing the ITO buffer layer is first power, the magnetron sputtering power adopted for preparing the ITO functional layer is second power, the magnetron sputtering power adopted for preparing the IZO functional layer is third power, the third power is larger than the second power, and the second power is larger than the first power. The top transparent electrode adopts a three-layer structure, and each layer structure is prepared through different magnetron sputtering powers and different materials, so that the top transparent electrode has excellent light transmission and conductivity, and the photoelectric conversion efficiency of the cell can be improved.

The invention discloses a high-mobility praseodymium-neodymium co-doped indium zinc oxide sputtering target material and a preparation method thereof, and belongs to the field of transparent conductive oxide materials. The target material is composed of 85.0 wt% to 95.0 wt% of indium oxide, 5.0 wt% to 15.0 wt% of zinc oxide and 0.3 wt% to 0.6 wt% of praseodymium and neodymium co-doped oxide. The preparation method comprises the following steps: performing multi-temperature gradient air calcination compounding on indium oxide powder, and performing carbon-buried atmosphere calcination on zinc oxide; performing four-section type rotating speed grinding by adopting a double-dispersant synergistic dispersion system to obtain uniform slurry; and finally, carrying out spray drying, forming and normal-pressure sintering in a specific atmosphere system. Through component and process innovation, the problems that a traditional IZO target material is prone to element volatilization, low in density and insufficient in migration rate are solved, the relative density of the obtained target material is larger than or equal to 99%, the grain size is uniform, the migration rate of a thin film used for sputtering reaches up to 68 cm < 2 > / V.s, the resistivity is not higher than 4 * 10 <-4 > omega.cm, the comprehensive performance is remarkably superior to that of a conventional IZO and ITO target material, and the target material is suitable for large-scale production. The method is especially suitable for high-performance perovskite solar cell transparent electrodes.

The invention relates to a perovskite top-emitting light-emitting diode and a preparation method thereof. The diode sequentially comprises a substrate, a metal reflection bottom electrode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer, a buffer layer and a transparent top electrode from bottom to top, the transparent top electrode is made of indium tin oxide or indium zinc oxide, and the buffer layer is made of high-molecular polymer. The top electrode has good transmittance in the visible light wave band, and the indium zinc oxide electrode with the thickness of 80 nm has the transmittance of about 90% in the visible light wave band from 380 nm to 800 nm.

A thin film optical lens and method for coating an optical substrate serves to apply alternating layers, with varying thicknesses, of a high index dielectric material and a low index dielectric material on first and second surfaces of an optical substrate. The high and low index dielectric materials are layered through thin film deposition. The low index dielectric material is SiO2. The high index dielectric material is ZrO2 and / or Indium Zinc Oxide. The spectral results from application of high and low index dielectric materials reduce infrared radiation, block HEV light transmission, and reduce backside ultraviolet reflections, while also increasing visible (ultraviolet) light transmission through the optical substrate. Thus, the layering of dielectric materials on the first surface of optical substrate reflects up to 40% of the infrared radiation; and the second surface of optical substrate transmits 99% of ultraviolet light in the wavelength range between 300 to 400 nanometers.

The invention discloses a FeFET transistor and a related integrated circuit. The channel layer of the transistor (1612a) may be formed of an amorphous oxide semiconductor. Examples of amorphous oxide semiconductors that can be utilized include indium oxide, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), indium zinc oxide (IZO), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), cadmium oxide, hafnium indium zinc oxide (HIZO), tin oxide, and indium tin zinc oxide (ITZO), etc. The amorphous oxide semiconductor channel layer may also be doped with elements such as gallium, indium, zinc, tin, hafnium, silicon, aluminum to optimize carrier concentration and mobility.

Disclosed herein is a method comprising: for i = 1,..., M, collecting, with a charge collection module (i), a first charge and a second charge from a sensing element (i) of a radiation detector over an entire first charge collection period and an entire second charge collection period, respectively; and for each value of i, determining a final value (i) of a pixel (i) of the same final image based on the first charge and the second charge. The time periods do not overlap. The radiation detector has a radiation absorbing layer and an electronic circuit layer. The radiation absorbing layer includes a sensing element. The electronic circuit layer includes a charge collection module. The electronic circuit layer has a read switch corresponding to the charge collection module. When one of the read switches is closed, it electrically connects the corresponding charge collection module to the charge measurement system. Each read switch has an indium zinc oxide transistor.

The invention belongs to the technical field of production of electricity-permeable films, and discloses an amorphous indium zinc oxide film, which is obtained by depositing an indium zinc oxide target material on the surface of a substrate under the atmosphere of inert gas and oxidizing gas by using the power of 950-1100W, and the mass ratio of indium oxide to zinc oxide in the indium zinc oxide target material is (95-99.5): (0.5-5). Through the design, the thin film has good electrical properties, and due to the fact that the indium zinc oxide thin film is in an amorphous state, the defects between band gaps caused by lattice mismatch are effectively reduced, so that the photoelectric property of the material is obviously improved, and in addition, the invention further discloses a preparation method of the amorphous indium zinc oxide thin film.

The embodiment of the invention discloses a praseodymium and gallium co-doped indium zinc oxide sputtering target material, a preparation method and application. The method comprises the following steps: S1, mixing praseodymium oxide powder, gallium oxide powder, indium oxide powder and zinc oxide powder according to a set proportion to obtain mixed raw material powder; adding a set amount of dispersing agent, binder and water, and carrying out ball milling and mixing to obtain mixed raw material slurry; wherein the indium oxide accounts for 60-70 parts by mass, the zinc oxide accounts for 30-40 parts by mass, the praseodymium oxide accounts for 0.01-1 part by mass, and the gallium oxide accounts for 0.5-2 parts by mass; the dispersing agent accounts for 1-3% of the total mass of the mixed raw material powder, the binder accounts for 0.1-0.5% of the total mass of the mixed raw material powder, and the deionized water accounts for 60-120% of the total mass of the mixed raw material powder; s2, performing spray granulation on the mixed raw material slurry to obtain spherical granulation powder; s3, carrying out mold pressing and cold isostatic pressing treatment on the spherical granulated powder to obtain a target material biscuit; and S4, the target material biscuit is subjected to degreasing and sintering integrated treatment, and the praseodymium and gallium co-doped indium zinc oxide sputtering target material is obtained.

The present invention is a synaptic transistor with long-term synaptic plasticity and a preparation method thereof. The structure of the transistor is: a semiconductor layer is on a substrate, electrodes are provided at both ends of the semiconductor layer, and an ion glue layer is covered on the semiconductor layer between the electrodes; wherein the electrodes are spaced source and drain electrodes; the semiconductor layer is an indium zinc oxide nanowire array and a nafion-graphene quantum dot blended layer covered thereon; during the preparation, graphene quantum dots are added to the nafion film to form a blended structure of graphene quantum dots and nafion, which greatly increases the long-term plasticity of the device. The present invention is a synaptic transistor with long-term synaptic plasticity, which enriches the selection of functional layer materials of synaptic transistors with bionic functions.

The application discloses a rare earth doped indium zinc oxide sputtering film target and a preparation method thereof. The preparation method comprises the following steps: S1, a certain amount of indium salt solution, zinc salt solution and rare earth salt solution are mixed, and a certain amount of pure water, a stabilizer and an organic solvent are added, and the mixture is stirred to obtain a precursor solution; S2, the precursor solution is spin-coated on a silicon wafer, and the silicon wafer coated with the precursor solution is dried; S3, the dried silicon wafer is annealed at a certain temperature to obtain a rare earth doped indium zinc oxide composite film; wherein the annealing temperature is 200-400 DEG C; and S4, the rare earth doped indium zinc oxide composite film is adhered to a titanium back plate through indium particles to obtain the rare earth doped indium zinc oxide sputtering film target. The preparation method of the rare earth doped indium zinc oxide sputtering film target disclosed in the embodiment of the application has simple preparation process, saves energy consumption, and the formed product has high light transmittance and low resistivity.

The utility model discloses a solar cell, a photovoltaic device, a power utilization device and a power generation device.The solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially arranged on a substrate in a stacked mode, and the second electrode layer comprises a first conductive layer, a second conductive layer and a third conductive layer which are sequentially arranged in a stacked mode; the first conductive layer and the third conductive layer comprise indium tin oxide, and the second conductive layer comprises indium zinc oxide; wherein the first conductive layer is located on one side of the second conductive layer facing the functional layer, and the third conductive layer is located on one side of the second conductive layer away from the functional layer. The first conducting layer and the third conducting layer are arranged on the two sides, close to and away from the functional layer, of the second conducting layer in the second electrode layer respectively, the second conducting layer comprises indium zinc oxide, and the first conducting layer and the third conducting layer comprise indium tin oxide. The arrangement mode of the second electrode layer is beneficial for improving the photoelectric conversion efficiency of the solar cell, and meanwhile, the stability of the solar cell is improved.

Methods for forming a magnesium oxide layer are disclosed. The disclosed method includes performing a cyclic deposition process to form a magnesium oxide layer having a reduced or low carbon impurity concentration. Also disclosed are methods for forming a magnesium-indium-zinc oxide layer comprising a magnesium oxide component having a reduced or low concentration of carbon impurities.

The present invention belongs to the technical field of solar cells and provides a TOPCON crystalline silicon solar cell and a preparation method thereof. The TOPCON crystalline silicon solar cell of the present invention uses self-assembled molecules as a hole transport layer, and innovatively inserts an anchor layer (the anchor layer is indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), zinc oxide (ZnO), tin dioxide (SnO 2 ) and titanium dioxide (TiO 2 ) at least one of the above; the thickness of the anchoring layer is 1 to 5 nm). The structure of the present invention can make the self-assembled molecules arranged in a high order to form an ultra-thin hole transport layer; at the same time, the ultra-thin self-assembled molecular layer can also have a lower contact resistance with the second passivation layer and the second transparent electrode layer, forming a more efficient match and improving the battery efficiency.

The application discloses a flexible temperature sensor suitable for an extreme high-temperature environment and a preparation method thereof. The sensor structure comprises a high-temperature-resistant flexible substrate which is made of a flexible heat-insulating composite material, the flexible heat-insulating composite material comprises a pre-oxidized yarn film, aerogel felt or transparent mica, and a thermocouple temperature-sensitive layer which is arranged on the surface of the high-temperature-resistant flexible substrate and is made of indium oxide, indium tin oxide or indium zinc oxide. The thickness of the high-temperature-resistant flexible substrate is 1-3 mm, and the thickness of the thermocouple temperature-sensitive layer is 10-30 um. The flexible heat-insulating composite material has excellent high-temperature resistance and can keep structural stability and integrity in an extreme high-temperature environment. The high-temperature-resistant flexible substrate made of the flexible heat-insulating composite material has strong heat resistance, and physical properties of the high-temperature-resistant flexible substrate do not change obviously in a high-temperature environment above 1000 DEG C, and the high-temperature-resistant flexible substrate still has good flexibility and stability.

The present invention relates to the technical field of target production, and discloses a preparation method of an indium zinc oxide evaporation target. In this method, a dispersant, a binder, zinc oxide powder, and indium oxide powder are first added to pure water and mixed to obtain a mixed slurry; then the mixed slurry is spray granulated to obtain IZO powder; subsequently, the IZO powder is spread into a graphite boat, sintered for the first time, and sieved to obtain the IZO powder after the first sintering; finally, deionized water is added to the IZO powder after the first sintering for wetting, molded, and sintered for the second time to obtain the indium zinc oxide evaporation target; the indium zinc oxide evaporation target prepared by the above method not only has a high relative density and conductivity, but also can be directly used for evaporation. In addition, the present application also discloses an indium zinc oxide evaporation target.

An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an organic layer disposed between the first electrode and the second electrode and includes an emission layer; and a fused cyclic compound represented by Formula 1 defined herein, wherein at least one of the first electrode and the second electrode, independently from one another, includes an indium tin oxide, an indium zinc oxide, a tin oxide, a zinc oxide, magnesium, silver, aluminum, lithium, aluminum-lithium, calcium, magnesium-indium, magnesium-silver, ytterbium, silver-ytterbium, or any combination thereof.

The invention provides a selective etching solution for metal molybdenum, which comprises the following components in percentage by mass: 21%-34% of electronic-grade phosphoric acid, 43%-58% of electronic-grade acetic acid, 0.05%-0.075% of ammonium persulfate, 2.8%-3.5% of electronic-grade nitric acid, 0.5%-3.0% of indium zinc oxide (IZO) etching inhibitor and the balance of deionized water. According to the etching solution, on the premise that the indium zinc oxide (IZO) etching rate is smaller than or equal to 0.03 nm / min, a metal molybdenum deposition layer can be rapidly removed, residues of metal molybdenum and oxides of the metal molybdenum are not generated, and etching of the metal molybdenum and the indium zinc oxide (IZO) has a high selection ratio.

The invention discloses a flexible temperature sensor suitable for an extreme high-temperature environment and a preparation method thereof, the sensor structure comprises a high-temperature-resistant flexible substrate, the high-temperature-resistant flexible substrate is made of a flexible heat-insulation composite material, and the flexible heat-insulation composite material comprises a pre-oxidized fiber film, an aerogel felt or transparent mica; the thermocouple temperature sensitive layer is arranged on the surface of the high-temperature-resistant flexible substrate, and the preparation material of the thermocouple sensitive layer comprises indium oxide, indium tin oxide or indium zinc oxide; wherein the thickness of the high-temperature-resistant flexible substrate is 1-3 mm, and the thickness of the thermocouple temperature sensitive layer is 10-30 microns. The flexible heat-insulating composite material has excellent high-temperature resistance and can keep structural stability and integrity in an extremely high-temperature environment, and the high-temperature-resistant flexible substrate made of the flexible heat-insulating composite material has extremely high heat resistance and has no obvious change in physical properties in a high-temperature environment of 1000 DEG C or above. Good flexibility and stability are still realized.

Methods for forming magnesium oxide layers are disclosed. The methods disclosed include performing cyclical deposition processes for forming magnesium oxide layers with a reduced or low carbon impurity concentration. Methods for forming magnesium indium zinc oxide layers including a magnesium oxide component with a reduced or low carbon impurity concentration are also disclosed.