1601results about How to "Improve contact effect" patented technology

An organic electroluminescent device includes an anode electrode layer, a cathode electrode layer opposed to the anode electrode layer, and a luminous layer containing an organic compound disposed between the anode electrode layer and the cathode electrode layer. An excitation state of the organic compound in the luminous layer is created upon a hole injection from the anode electrode layer, and an electron injection from the cathode electrode layer, thereby causing light emission in the organic electroluminescent device. An electron-accepting material is provided in at least one hole transportation layer capable of transporting holes injected from the anode electrode layer disposed between the anode electrode layer and the cathode electrode layer, and the electron-accepting material is positioned at a site which is not adjacent to the anode electrode layer.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

Water-based adhesive compositions are improved by the incorporation of hollow polymeric microspheres having outer surfaces coated with one or more barrier materials such as calcium carbonate particles. The adhesive compositions exhibit enhanced rheology, sprayability, drying time, tack and storage stability as compared to analogous adhesives that are not modified with coated hollow polymeric microspheres. Such compositions are useful as both contact adhesives as well as wet bonding one-way adhesives.

Example embodiments relate to a phase-change memory device and methods of fabricating the same. A phase-change memory device may include a lower electrode on a semiconductor substrate, a phase-change material layer on the lower electrode, a contact plug between the lower electrode and the phase-change material layer, wherein a first area of the contact plug in contact with a top of the lower electrode is greater than a second area of the contact plug in contact with a bottom of the phase-change material layer and an upper electrode on the phase-change material layer.

A contact structure for establishing electrical connection with contact targets. The contact structure is formed of a contactor carrier and a plurality of contactors attached to a contactor carrier. The contactors are inserted in diagonal through holes on the contactor carrier and attached to the contactor carrier through adhesives. The contactor has a top end having a flat top surface, a straight diagonal beam integral with the top end and configured by an upper beam portion and a lower beam portion, and a lower end at an end of the lower beam portion to contact with a contact target. A length of the upper beam portion and a length of the lower beam portion are about the same. A probe contact assembly using the contact structure is also disclosed which incorporates a flip chip bonding technology to interconnect the components therein.

An electrooptic device includes a substrate and a pluralty of pixel units. Each pixel unit includes a pixel electrode; an active element for active control of the pixel electrode; a conductive layer that is disposed below the pixel electrode and that connects the active element to the pixel electrode; an organic resin film that provides interlayer insulation between the active element and the pixel electrode and between the conductive layer and the pixel electrode, the organic resin film having a small hole that overlaps part of the conductive layer in a plan view; a first inorganic insulating film disposed between the organic resin film and the conductive layer and between the organic resin film and the active element such that the first inorganic insulating film overlaps the conductive layer and the active element in a plan view, the first inorganic insulating film having a first hole inside the small hole in a plan view, the first hole having a diameter equal to or smaller than the bottom of the small hole; and a second inorganic insulating film disposed between the organic resin film and the pixel electrode, the second inorganic insulating film having a second hole that is continuous to the first hole and that forms a contact hole together with the first hole. The pixel electrode is formed in a continuous manner from inside the contact hole to outside the contact hole such that the pixel electrode is electrically connected to the conductive layer exposed inside the first hole.

A cover (10) for substrate (not shown) including: a body (12) defining a cavity (18), for positioning over the substrate (not shown) to form a reaction chamber (18); and a projection (13) extending from the body (12) to define a fluid reservoir (14), when the cover (10) is fitted to the substrate (not shown), the fluid reservoir (14) being in fluid communication with the cavity (18).

The present invention discloses an inorganic-organic nano composite solid electrolyte membrane and a preparation method and application thereof. The composite solid electrolyte is a novel inorganic-organic nanocomposite combining the respective advantages of inorganic ceramic solid electrolyte and organic polymer electrolyte and is composed of a negative electrode protective layer, a support layerand a positive electrode interface layer. The support layer plays a supporting role, and the main component of the negative electrode protective layer is the inorganic solid electrolyte with good mechanical properties, which can effectively inhibit the growth of lithium dendrite; and the positive electrode interface layer is mainly composed of organic polymer electrolyte with good flexibility, ensures good contact with active materials and provides a continuous ion transport channel. In the present invention, the composite solid electrolyte with good interface compatibility is prepared by coating on both sides of the support layer, and the process is simple and efficient. The composite solid electrolyte can effectively inhibit dendritic crystal and reduces interface resistance so that a solid lithium metal battery has higher energy density and longer cycle life.

A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a light reflection layer and a protective layer on a substrate in this order. The semiconductor layer is formed by laminating a buffer layer, a GaN layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer in this order. The light reflection layer is formed by depositing an Ag alloy on a surface of the p-type contact layer while heating the substrate at, for example, a temperature from 100° C. to less than 400° C. After the semiconductor layer, the light reflection layer and the protective layer are formed, the semiconductor layer, the light reflection layer and the protective layer are heated in a predetermined time range at an ambient temperature within a higher temperature range than a temperature range at the time of heating the substrate.

The invention provides a zinc negative electrode with a zinc ion conductivity interface modification layer, a battery and a preparation method, and belongs to the field of aqueous zinc battery metal zinc cathodes. The preparation method comprises: in air atmosphere, pre-constructing an interface modification material M on a base membrane; in a soaking environment by a wetting liquid, the interfacemodification material M layer on the base film being in close contact with the metal zinc to form the short-circuit primary battery, and the contacted interface modification material M and the metalzinc having spontaneous redox reaction, to make the interface modification material convert to ZnxM with zinc ion conductivity from M, meanwhile, transferring the interface modification material layerto the surface of the metal zinc negative electrode from the base film, and finally, obtaining the metal zinc negative electrode with the ZnxM interface modification layer with zinc ion conductivityon the surface. The ZnxM interface modification layer with the zinc ion conductivity can effectively inhibit dendritic crystal growth of a zinc negative electrode during charging and discharging of azinc battery, so that the interface stability of a metal zinc negative electrode is improved, and meanwhile, the cycling stability of a water-based zinc battery is improved. The method is simple and has a good actual effect.

The invention relates to a dust fall agent for water mist dust fall. 0.06-0.2wt% of wetting agent permeation assistant is added to water, wherein the wetting permeation assistant comprises anionic surfactant, or cationic surfactant, or zwitterionic surfactant, or non-ionic surfactant. Because in the dust fall agent of the invention, 0.06-0.2wt% of wetting agent permeation assistant is added to water, thus the surface tension of the water can be reduced, the contact capacity of the water with dust particles is promoted, and solid materials can be soaked by water more easily through the wetting agent permeation assistant, thereby accelerating the wetting permeation velocity of water to the dust particles, accelerating the fall velocity of the dust particles, and reducing the fall time of the dust particles. Thus, the invention reduces the operation time and the operation cost, protects the health and safety of operation personnel, and can be widely applied to water spray, water sprinkling, dust fall and dust suppression of mines, tunnels or roads.

A photovoltaic cell comprising a metal oxide back buffer layer. Improved n-CdS / p-CdTe heterojunction photovoltaic cells comprising a metal oxide buffer layer for making low-resistance electrical contact to the p-type CdTe layer. The back buffer layer comprises metal oxides having a high work function.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

The invention discloses a Na3MnTi(PO4)3 / C composite material, a preparation method and an application thereof in a sodium-ion battery. The composite material is composed of carbon coated Na3MnTi(PO4)3 particles. The preparation method comprises the following steps: utilizing an organic matter as a reducing agent and a carbon source, taking low-cost manganese source and titanium source as raw materials and adopting a solid phase method for synthesizing a carbon coated Na3MnTi(PO4)3 composite anode material with an excellent performance. The preparation method is simple and practicable, the condition is mild and the yield is high. When the prepared composite material is used as an anode material of the sodium-ion battery, the anode material shows high energy density, high working voltage, excellent circulatory stability and excellent rate capability.

A semiconductor power device having shielded gate structure in an active area and having ESD clamp diode with two poly-silicon layer process is disclosed, wherein: the shielded gate structure comprises a first poly-silicon layer to serve as a shielded electrode and a second poly-silicon layer to serve as a gate electrode, and the ESD clamp diode formed between two protruding electrodes is also formed by the first poly-silicon layer. A mask specially used to define the ESD clamp diode portion is saved.

An electrode sensor kit for establishing electrical contact with skin comprises at least one contact element and a preparation comprising a mixture of water and at least one lipid for enhancing electrical contact properties between said contact element and the skin, wherein said mixture forms an emulsion, in particular a water-in-oil or an oil-in-water emulsion, having a conductivity of less than 3 mS / cm. An electrode assembly for electrical impedance tomography which comprises said kit is characterized in that (a) said at least one contact element forms an electrode or sensor plate, and (b) said at least one contact element comprises a layer of said preparation.

A connecting structure is for a printed wiring board to be electrically connected to a FPC. The FPC includes a substrate and electro-conductive portions. The printed wiring board includes an insertion opening provided on an edge surface thereof, and line connecting terminals formed on an inner wall face of the insertion opening. A dual in-line contact member including first contact members is fixed to the top end portion of the FPC. Each first contact member includes a main body, and a first arm and a second arm extending from the main body generally in parallel to each other. Furthermore, the first arm and the second arm are bent at bent portions so as to form curves protruding away from each other. With the present embodiment, at least one of the first arm and the second arm press the corresponding line connecting terminal provided within the insertion opening at the bent portion thereof by inserting the FPC to the insertion opening of the printed wiring board. Thus, the FPC is connected to the edge surface of the printed wiring board. This improves the freedom from the perspective of design of the wiring pattern as well as allowing mounting of circuit components with high circuit density.

The invention relates to an improved electronic device, like an organic field emission transistor (OFET), which has a short source to drain channel length and contains an organic semiconducting formulation comprising a semiconducting binder.

Fabrication of surfaces with reduced protein adsorption and / or cell adhesion comprising a vapor deposition coating process such that the coating includes polymer interfaces containing chemical groups reducing the protein adsorption and / or cell adhesion. The invention allows precise anchoring and presentation of biomolecules in their biological context. The resulting systems comprise superior surfaces for design of protein- or cellbased bioassays, because of high-signal-to-noise ratios. Background adsorption is suppressed while specific interaction with capturing molecules is not affected.

In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.

An array substrate for a reflective liquid crystal display device, including a gate line and a data line defining a pixel region by crossing each other; a switching element at a crossing portion of the gate line and the data line; a first passivation layer covering the switching element and the data line; and formed of an inorganic insulating material; a reflective electrode on the first passivation layer, and connected to the switching element; and a second passivation layer on the reflective electrode. The second passivation layer being formed of an organic insulating material.

The invention discloses a method for processing light hydrocarbons oxidation sweetening tail gas. The method takes diesel distillate as an absorbent and adopts a countercurrent pulsed bubbling absorption tower; a gas phase is dispersed by a nozzle of the absorption tower, and is contacted with the absorbent in a bubbling absorption area to absorb volatile hydrocarbons in the gas phase; the nozzleof the absorption tower has a bubbling pulse valve structure; and the absorbent flows downwards through a downflow spout arranged on a tower plate of the bubbling absorption area. The method has the advantages of simple process, economy and reasonability, and accordance with environmental protection standards, and can be used for processing various light hydrocarbons oxidation sweetening tail gases.

The invention discloses a trench insulated gate bipolar transistor (IGBT) device. According to the invention, an emitter region-base region contact doping zone with a P<+> type is included. The doping zone is in a P-type base and at least encompasses the lowest part of an emitter region-base region contact trench. The concentration of the majority carriers in the emitter region-base region contact doping zone is higher than that of the P-type base, and the emitter region-base region contact doping zone keeps a predetermined distance from a channel region nearby trench gates, so that it can be guaranteed that an emitter electrode-base electrode resistor can be reduced under the condition that a grid electrode- emitter electrode threshold voltage is not improved.

The invention discloses three-dimensional functionalized graphene for supercapacitors and a preparation method of the three-dimensional functionalized graphene. Natural graphite powder is used as a raw material for preparing graphite oxide, hydrochloric acid assists in ultrasonic stripping so that oxidized graphene can be prepared, and the three-dimensional functionalized graphene is obtained through controllable thermal reduction. The three-dimensional functionalized graphene prepared through the method is of a controllable multistage mutual through hole structure and has functionalized surface functional groups. The three-dimensional functionalized graphene is made into electrodes suitable for the supercapacitors, the specific capacitance value of the electrodes in a water-based electrolytic solution reaches 508 F / g, energy densities of the supercapacitors are 15 Wh / kg and 66 Wh / kg, and corresponding power densities of the supercapacitors are 14 kW / kg and 52 kW / kg in a water-based electrolytic solution system and an ionic liquid-based electrolytic solution system. When the power density of the ionic liquid-based electrolytic solution system is 128 kW / kg, the corresponding energy density still keeps 56 Wh / kg accounting for 85% that of an initial value.

The invention provides an anti-interference electrocardiograph detection system, a detection method, a special flexible graphene electrode, and a preparation method and the application of the special flexible graphene electrode. The anti-interference electrocardiograph detection system comprises the flexible graphene electrode, an electrocardiosignal acquiring and processing module, an impedance measurement module, an electrocardiographic wire and a signal processing module, can measure an electrocardiosignal and a motion artifact signal, and removes the motion artifact in the electrocardiosignal. The flexible graphene electrode is formed in a way that a graphene material is adhered on a sponge layer through negative pressure deposition to obtain a graphene-sponge conductive composite, a fastener is additionally added on the graphene-sponge conductive composite, and the electrocardiographic wire is fixedly connected to the graphene-sponge conductive composite through the fastener. The anti-interference electrocardiograph detection system and the detection method effectively overcome the interference of the motion artifact on the electrocardiosignal, and guarantees the instantaneity, the accuracy and the reliability of the electrocardiographic examination result; the preparation flow of the flexible graphene electrode is simple, the biological compatibility of the flexible graphene electrode is good, the service life of the flexible graphene electrode is long, and the flexible graphene electrode can be used in the anti-interference electrocardiograph detection system.

In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.

The present invention discloses an MEMS universal inertia switch capable of identifying a load orientation interval. The switch comprises an insulation substrate, an axial electrode supporting base, a radial electrode supporting base, a spring supporting base, an axial electrode, an annular inertia mass block electrode, a spacing stop post, a radial electrode, a snake-shaped support spring, a radial electrode connecting strip, a radial electrode connecting strip and at least one mass block electrode connecting strip. The MEMS universal inertia switch capable of identifying the load orientation interval has good response for the acceleration load at any one direction from the upper portion of the substrate to play a switch on / off effect, and can effectively identify the space orientation of the acceleration load which the switch has so as to solve the problem that a current MEMS universal inertia switch cannot identify the load space orientation, and the axial threshold of the closure of the switch is larger than a radial threshold thereof to realize axial deterring and radial sensitivity of the switch.

The present invention discloses a method to prepare chloroethylene by a circulated flow bed reaction device and the corresponding device, which belongs to the chemical technical process and device technology region. Two or more than two gas distributing devices are arranged inside of the flow bed, which divide the flow bed into two or more than two catalyzer zones; a fan is arranged outside of the flow bed, which can make part of products circulate after being pressured and then enters the flow bed again; the design can make the catalyzer zones in a better flow state so as to guarantee the much better heat-exchange effect between the bed level and the heat-exchange interface; besides, the stability of the device and the elasticity of the operation can be enhanced; the low-temperature catalyzer zone in the upper level can decrease the temperature for the reaction gas, and then extract the included hydrargyrum so as to decrease the environment pollution because of the losing of hydrargyrum; the catalyzer in each catalyzer zone is circulated termly so as to use the catalyzing function for hydrargyrum enough. The flow bed reaction device and technology in the present invention has the advantages of high transfer ratio of ethyne, good diathermancy, even temperature of the bed level, good controlled ability and elastic operation and so on.