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AZO sputtering target for high-stability transparent conductive film and manufacturing method

A technology of transparent conductive film and sputtering target material, which is applied in sputtering plating, metal material coating process, ion implantation plating, etc. It can solve the problem of instability of ITO conductive film, inability to meet the use requirements, limited stock of the earth's crust, etc. problems, to achieve the effect of abundant reserves, high production efficiency, and easier control of the production process

Inactive Publication Date: 2010-10-06
YIXING BAILUN OPTO ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high cost of ITO materials, the main raw material is rare indium metal, the stock in the earth's crust is limited, and the ITO conductive film is unstable in reducing atmosphere and relatively high humidity air environment, which cannot meet the requirements of these fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh 600 grams of ZnO powder with a purity of 4N and an average particle size of 0.5 microns, and add 2% by weight of Al with an average particle size of 10 microns 2 o 3 and 0.3% B with an average particle size of 7 microns 2 o 3 Powder. Add 35% by weight of deionized pure water and 0.5% of triethanolamine organic additives to mix, use a ball mill to mix for more than 16 hours, add 1% of the total weight of polyvinyl alcohol organic binder, and ball mill for 2 hours, and spray the slurry Drying and granulation treatment to obtain target raw materials with an average particle diameter of 50 microns, using a metal mold of 1 ton / CM 2 Press molding to obtain a green body with a diameter of 150 mm and a thickness of 10 mm with a relative density greater than 54%. The green body was kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature was raised to 1500 degrees Celsius for sintering and compacting to obtain a relativ...

Embodiment 2

[0032] Weigh 950 grams of ZnO powder with a purity of 5N and an average particle size of 0.5 microns, add 20 grams of Al with an average particle size of 10 microns 2 o 3 and 30 grams of B with an average particle size of 7 microns 2 o 3 Powder. Add 200 grams of deionized pure water and 5 grams of triethanolamine to mix, use a ball mill to mix for more than 16 hours, add 1% of the total weight of polyvinyl alcohol organic binder, and ball mill for 2 hours, and the slurry is spray-dried and granulated. Obtain the target raw material with an average particle diameter of 50 microns, using a metal mold of 2 tons / CM 2 Press molding to obtain a green body with a diameter of 150 mm and a thickness of 10 mm with a relative density greater than 54%. The green body was kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature was raised to 1500 degrees Celsius for sintering and compacting to obtain a relative density of 99%. The cera...

Embodiment 3

[0034] Weigh 969 grams of ZnO powder with a purity of 6N and an average particle size of 0.5 microns, add 30 grams of Al with an average particle size of 10 microns 2 o 3 and 1 gram of B with an average particle size of 7 microns 2 o 3 Powder. Add 350 grams of deionized pure water and 5 grams of triethanolamine organic additives, mix them with a ball mill for more than 16 hours, add 10 grams of polyvinyl alcohol organic binder, ball mill for another 2 hours, and spray the slurry to granulate Processing to obtain the target raw material with an average particle diameter of 50 microns, using a metal mold of 3 tons / CM 2 Press molding to obtain a green body with a diameter of 150 mm and a thickness of 10 mm with a relative density greater than 54%. The green body was kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature was raised to 1500 degrees Celsius for sintering and compacting to obtain a relative density of 99%. The ...

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Abstract

The invention discloses an AZO sputtering target for a high-stability transparent conductive film and a manufacturing method. The raw material powder used by an IZGO sputtering target comprises 2 to 3wt% of Al2O3, 0.1 to 3wt% of B2O3 and the balance of ZnO powder; the average grain diameter of the powder is 0.05 to 50 microns, and the purity of the raw material powder is larger than or equal to 4N. The material of the invention is easier to control when used in the production process of the transparent conductive film through magnetron sputtering, a serious poisoning phenomenon similar to an ITO does not exist, and the sputtering process does not need heating, which has more advantages in the production of flexible conductive films such as plastics, and the stability and the weatherability of the film are much superior to that of the ITO and traditional zinc aluminum oxide conductive films. The resistivity of the produced transparent conductive film is smaller than 5*10 to 4Omega.cm, the visible light transmittance of 400 to 700nm is larger than 85%, and the requirements of various transparent conductive films can be satisfied.

Description

technical field [0001] The invention relates to a photoelectric material, specifically, the invention relates to an AZO sputtering target material for a transparent conductive film with high stability and a manufacturing method. Background technique [0002] The transparent conductive film produced by magnetron sputtering is a necessary functional material for liquid crystal display, flat panel display, electrostatic shielding and solar cells. At present, the DC magnetron sputtering method is the leading preparation process for transparent conductive films used in international high-end display devices. The traditional process uses ITO semiconductor ceramics (90% In 2 o 3 -10%SnO 2 ) as a sputtering source, the ITO transparent conductive film is generally prepared by the DC magnetron sputtering method at a substrate temperature of 100-550 degrees Celsius in an argon or argon-oxygen mixed atmosphere. %, and the resistivity is less than 10×10 -4 Ω.cm. However, due to the...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34C04B35/453C04B35/622
Inventor 孔伟华
Owner YIXING BAILUN OPTO ELECTRONICS MATERIAL
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