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Method for preparing tantalum oxide film by direct current magnetron sputtering method

A technology of DC magnetron sputtering and tantalum oxide, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problem of insufficient response speed, low cycle life of devices, and research on fast ion thin films. few questions

Inactive Publication Date: 2017-07-18
东北大学秦皇岛分校
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The only research on oxide fast ion conductors, such as TaOx and ZrOx, still has many problems that cannot be solved when used in electrochromic devices, such as the cycle life of the device is still not high, and the response speed is not fast enough.
There is no unified understanding of the mechanism of ion implantation, and the recombination of each film layer is not ideal.
The domestic research on fast ion transport thin films has been emerging recently, especially for the research on fast ion thin films used in electrochromic devices, there are still the following problems: (1) The current research is still focused on the fast ion conductors of polymer materials , there is still little research on inorganic all-solid-state fast ion thin films
(2) Most of the research on the preparation of this layer of thin film by sol-gel method and evaporation method, using magnetron sputtering, especially the research of DC reactive magnetron sputtering is still less

Method used

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  • Method for preparing tantalum oxide film by direct current magnetron sputtering method
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  • Method for preparing tantalum oxide film by direct current magnetron sputtering method

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Embodiment 1

[0113] A method for preparing a tantalum oxide film by DC magnetron sputtering, comprising the following steps: taking a pretreated substrate glass slide and putting it into a reaction chamber of a magnetron sputtering apparatus; 99.95% pure Ar as working gas and 99.95% pure O 2 As a reactive gas, the volume ratio of the working gas to the reactive gas is 14:6; adjust the sputtering working pressure to 2.3Pa, set the sputtering power to 60W, and sputter the Ta target, which is high-purity tantalum with a purity of 99.95%. , the sputtering time was 5min, and a TaOx film was obtained on the substrate.

Embodiment 2

[0115] A method for preparing a tantalum oxide film by a DC magnetron sputtering method, comprising the following steps: taking a pretreated substrate ITO glass and putting it into a reaction chamber of a magnetron sputtering apparatus; after the reaction chamber is evacuated, it is filled with pure 99.95% Ar as working gas and 99.95% O 2 As a reactive gas, the volume ratio of the working gas to the reactive gas is 16:2; adjust the sputtering working pressure to 2.3Pa, set the sputtering power to 70W, and sputter the Ta target, which is high-purity tantalum with a purity of 99.95%. , the sputtering time is 20min, and a TaOx film is obtained on the substrate.

Embodiment 3

[0117]A method for preparing a tantalum oxide film by a DC magnetron sputtering method, comprising the following steps: taking the base material ITO glass and washing away the attached coarse impurities with deionized water, then immersing the base material in acetone, and ultrasonicating the base material at 70 Hz After drying for 10 minutes, put it into a UV cleaning machine and run it for 18 minutes; then immerse the substrate in absolute ethanol, ultrasonicate at 70 Hz for 10 minutes, and dry it. Take the pretreated substrate and put it into the reaction chamber of the magnetron sputtering apparatus. After the reaction chamber is evacuated, it is filled with Ar with a purity of 99.95% as the working gas and O with a purity of 99.95%. 2 As a reactive gas, the volume ratio of the working gas to the reactive gas is 16:4; adjust the sputtering working pressure to 2.3Pa, set the sputtering power to 80W, and sputter the Ta target, which is high-purity tantalum with a purity of 99...

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Abstract

The invention discloses a method for preparing a tantalum oxide film by a direct current magnetron sputtering method. The method comprises the following steps: taking a preprocessed base material and placing in a reaction chamber of a magnetron sputtering instrument, after vacuumizing the reaction chamber, charging Ar with a purity of 99.95% as working gas and O2 with a purity being 99.95% as reactive gas, adjusting a sputtering working gas pressure, setting sputtering power, sputtering a Ta target material, and obtaining the tantalum oxide film on the base material. According to the method for preparing a tantalum oxide film by a direct current magnetron sputtering method, an obtained TaOx film has excellent ion transmission performance, low conductivity and higher transmittance. The tantalum oxide film layer is better in compactness.

Description

technical field [0001] The invention relates to a method for preparing a tantalum oxide thin film by a DC magnetron sputtering method, and specifically belongs to the technical field of thin film preparation. Background technique [0002] Fast ion conductors were first used in high-density batteries made of liquid electrolytes. Because fast ion conductor materials can be applied to long-life, low-energy miniature solid-state batteries, they can also be used in integrated circuits, and the latter has also undergone many long-term developments with the development of science and technology, which in turn has driven the development of related fast ion conductors. research progress. [0003] At present, there are four types of fast ion conductors, which are monovalent cation solid electrolytes, divalent cation solid electrolytes, trivalent cation solid electrolytes, and tetravalent cation solid electrolytes. Some progress has been made in the research of each category. The mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/35C23C14/0036C23C14/083
Inventor 王海钱苏豪凯温刘平吴智升王伯宇王晓强
Owner 东北大学秦皇岛分校
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