Preparation method of silicon-aluminum sputtering target material

Abstract

The invention discloses a preparation method of a silicon-aluminum sputtering target material high in density, low in oxygen content and not prone to embrittlement. The preparation method comprises the following steps of target material base tube preparing, wherein a stainless steel base tube of the required type is selected and checked; base tube surface pretreatment, wherein the base tube is made to enter base tube pretreatment equipment to be subjected to sand-blasting roughening, a nickel-aluminum alloy wire is utilized, a bottoming combination layer is sprayed through an arc spray method, and a target material base tube to be sprayed is obtained; raw material preparing, wherein 50 kg of silicon powder with the content ranging from 99.9% to 99.95%, the oxygen content being smaller than or equal to 1,000 ppm and the particle size ranging from 45 micrometers to 150 micrometers and 6.6 kg of high-purity spherical aluminum powder with the content ranging from 99.9% to 99.95%, the oxygen content being smaller than or equal to 1,500 ppm and the particle size ranging from 45 micrometers to 100 micrometers are weighed; powder mixing, wherein two obtained raw materials are put into a V-shaped powder mixer to be mixed for 5 hours to 6 hours; and drying, wherein an evenly-mixed silicon-aluminum powder raw material is put in a drying furnace to be dried for 2 hours to 3 hours, and the temperature is 60 DEG C.

Description

technical field [0001] The invention relates to the field of sputtering coating materials, in particular to a method for preparing a silicon-aluminum target material. Background technique [0002] In recent years, the sputtering coating process of physical vapor deposition has been developed day by day, and the quality of the target material directly affects the quality of the film. Aluminum target is an indispensable film material in the sputtering coating process of energy-saving glass and decorative panels, and has been widely used. Due to the limitations of production technology, the silicon-aluminum target materials currently used in my country have the defects of insufficient relative density (≤95%), many pores, high oxygen content, and easy to be brittle during use. During the sputtering process, because the density of the target is not high enough and the material is relatively loose, when the charged ions moving around the target at high speed bombard the surface o...

AI Technical Summary

Problems solved by technology

Due to the limitations of production technology, the silicon-aluminum target materials currently used in my country have the defects of insufficient relative density (≤95%), many pores, high oxygen content, and easy to be brittle during use.

During the sputtering process, because the density of the target is not high enough and the material is relatively loose, when the charged ions moving around the target at high speed bombard the surface of the target, it will shoot out target atomic groups of different sizes and deposit on the substrate, and the film layer is not enough. It is dense and flat, with unevenness. At the same time, the instantaneous high temperature on the surface of the sputtering target will easily cause loose particles to fall off, contaminate the glass surface, and affect the coating quality.

Due to the many pores inside the target, during the sputtering film formation process, the gas in the pores inside the target will suddenly explode, causing particles to splash, contaminating the surface of the film layer, making the film not dense, the surface rough, and the number of defects increased.

The high oxygen content in the target makes the conductivity of the target worse during the sputtering process, which affects the discharge initiation and the sputtering rate becomes poor. At the same time, due to the high oxygen content, the oxygen in the target is released during the sputtering process. Into the vacuum chamber of the sputtering chamber, the oxygen concentration in the vacuum chamber becomes higher, and the sputtered target atomic groups to be filmed are oxidized, which partially changes the chemical properties of the target material and affects the quality of the film.

There are several reasons for target brittleness during use. One is low density and insufficient internal bonding force; the other is material segregation and uneven distribution; the third is stress inside the target. Embrittlement occurs when heated and impacted