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Preparation method of tubular rotating high-purity silicon sputtering target

A sputtering target, high rotation technology, applied in the direction of sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problem of insufficient relative density, poor conductivity of the target material, and poor sputtering effect Good and other problems, to achieve the effect of improving key quality indicators, improving product performance, and increasing coating rate

Active Publication Date: 2019-04-02
FAKETE TECH JIANGSU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of production technology, the silicon target material produced by thermal spraying process on the market has the defects of insufficient relative density (≤95%), many pores, and high oxygen content.
During the sputtering process, due to the high oxygen content, the conductivity of the target material deteriorates, which affects the discharge ignition, and the sputtering effect is not good. At the same time, due to the high oxygen content, the oxygen in the target material is released to the sputtering process during the sputtering process In the vacuum chamber of the injection chamber, the oxygen concentration in the vacuum chamber becomes higher, and the target molecules sputtered out to be filmed are oxidized, which affects the quality of the film.

Method used

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Examples

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Comparison scheme
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Embodiment Construction

[0006] The specific content of the present invention will be described in detail below through specific embodiments.

[0007] A method for preparing a tubular rotating high-purity silicon sputtering target, comprising the following steps: target substrate tube preparation: selecting and inspecting the required type of target substrate tube; substrate tube surface pretreatment: putting the target substrate tube into the substrate tube pre-treatment The treatment equipment carries out sandblasting and roughening, spraying and priming bonding layer, and obtains the target substrate tube to be sprayed; silicon powder raw material preparation: weighing content: 99.95%-99.99%, oxygen content ≤ 1500ppm, particle size 45-150μm silicon powder; drying: place the obtained silicon powder raw material in a drying furnace to dry; vacuum plasma spraying: place the target base tube in a sealed spraying chamber, use a high-power supersonic plasma spraying gun, and use plasma The body is the he...

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Abstract

The invention discloses a preparation method of a tubular rotating high-purity silicon sputtering target with high purity, high density, low oxygen content and low resistivity. The preparation method comprises the following steps: preparation of a target base tube: the target base tube with a needed model number is selected and checked; surface pretreatment of the base tube: the target base tube is fed in a base tube pretreatment equipment for sand blasting roughening and spraying of a backing binding layer to obtain the target base tube to be sprayed; preparation of silicon powder raw materials: silicon powder with the content of 99.95-99.99%, the oxygen content of not more than 1500 ppm and the particle size of 45-150 microns is weighed; drying: the obtained silicon powder raw materials are put in a drying furnace for drying; and vacuum plasma spraying: the target base tube is put in a sealed spraying bin; a high-power supersonic plasma spraying gun is adopted; plasma is used as a heat source for heating the obtained silicon powder as a molten or half-molten state; and the silicon powder is sprayed to the surface of the prepared target base tube along with high-speed flame flow to form a compact silicon coating layer.

Description

technical field [0001] The invention relates to the field of sputtering coating materials, in particular to a method for preparing a tubular rotating high-purity silicon sputtering target. Background technique [0002] Since the silicon material has the characteristics of good superhardness, wear resistance, corrosion resistance and good sealing, the silicon target has been used as an indispensable sealing and grating coating material in the sputtering coating process. It is used in photoelectric glass, energy-saving glass, Superhard wear-resistant tools and other fields have been widely used. Due to the limitation of production technology, the silicon target material produced by thermal spraying process on the market has the defects of insufficient relative density (≤95%), many pores, and high oxygen content. During the sputtering process, due to the high oxygen content, the conductivity of the target material deteriorates, which affects the discharge ignition, and the spu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 施玉良
Owner FAKETE TECH JIANGSU
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