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Tin oxide target and preparation method thereof

A tin oxide and target technology, applied in the field of tin oxide target and its preparation, can solve the problems of slow sputtering rate, low compaction rate of SnO target, poor thermal stability of SnO powder, etc., and improve the sputtering rate. Effect

Inactive Publication Date: 2016-12-07
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the low melting point of tin, when using Sn targets to prepare SnO films, the sputtering power and substrate temperature will be limited. When sputtering under high power conditions, the Sn targets will partially melt and flow, while The sputtering rate is slow when sputtering under low power conditions; in addition, when using the Sn target to prepare SnO thin films, the sputtering conditions must be strictly controlled, otherwise it is easy to get SnO 2 Thin film instead of SnO thin film
When adopting SnO target material to prepare SnO film, because SnO target material resistivity is bigger, can only adopt the method of radio frequency magnetron sputtering, and the sputtering rate of radio frequency magnetron sputtering is slower; In addition, described SnO target material mainly By sintering SnO powder to make a target, the SnO target obtained by sintering at low temperature has a low compactness rate, and the thermal stability of SnO powder is poor when sintering at high temperature, so the reaction in the sintering process is complicated, making the composition of the SnO target very low. It is difficult to accurately control, so that the composition of the SnO thin film is also difficult to be accurately controlled

Method used

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  • Tin oxide target and preparation method thereof
  • Tin oxide target and preparation method thereof
  • Tin oxide target and preparation method thereof

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preparation example Construction

[0025] The embodiment of the present invention further provides a method for preparing the tin oxide target, including:

[0026] S11, provide Sn powder and SnO 2 powder;

[0027] S12, the Sn powder and SnO 2 Mixing the powders to obtain a mixture, the atomic ratio of Sn atoms to O atoms in the mixture is 1:2<Sn:O≦2:1; and

[0028] S13, performing press molding and sintering on the mixture to obtain the tin oxide target, and the sintering is performed in an inert atmosphere.

[0029] In step S11, the Sn powder and SnO 2 The purity of the powder is preferably 3N (99.9% by mass) to 5N (99.999% by mass). The Sn powder and SnO 2 The mass ratio of the powders is regulated according to the atomic ratio of Sn atoms to O atoms in the mixture. In one embodiment, the Sn powder and SnO 2 The mass ratio of the powder is 0.4~1.2. At this time, the atomic ratio of Sn atoms to O atoms in the tin oxide target is 1.5:2≦Sn:O≦2.5:2.

[0030] In step S12, the Sn powder and SnO 2 The metho...

Embodiment 1

[0051] Weigh 240g of Sn powder with a purity of 5N, SnO 2 Powder 250g, put into the ball mill jar and mix. The ball milling medium is selected as absolute ethanol, the ball milling speed is 200 rpm, and the ball milling time is 10 h. After ball milling, dry under the protection of Ar gas with a pressure of 1 atm and a purity of 5N for 1 h. After sintering, the powder was put into a hot-pressed sintering furnace, and sintered in a high-purity Ar gas atmosphere with a sintering pressure of 50 MPa, a sintering temperature of 300 °C, a heating rate of 15 °C / min, and a sintering time of 4 h. After the sintering is completed, the tin oxide target is obtained by cooling to room temperature with the furnace. The density ratio of the tin oxide target is greater than 85%. The tin oxide target is used for magnetron sputtering, which has easy arc starting and stable sputtering. image 3 Shown is the XRD spectrum of the obtained target sample.

Embodiment 2

[0053] Weigh 160g of Sn powder with a purity of 5N, SnO 2 Powder 160g, put into ball mill jar and mix. The ball milling medium is selected as absolute ethanol, the ball milling speed is 400rpm, and the ball milling time is 20h. After ball milling, the powder was dried under atmospheric pressure for 1 h. The tin oxide target was prepared by constant pressure sintering, and the powder was put into a common press with a pressure of 70MPa and a holding time of 30min. Put it into the sintering furnace after demoulding, in high-purity N 2 The sintering was carried out in an air atmosphere, the sintering temperature was 400°C, the heating rate was 10ºC / min, and the sintering time was 8h. After sintering, the furnace was cooled to room temperature for sampling. The target density rate is greater than 80%. The tin oxide target is used for medium-frequency AC magnetron sputtering, and the arc is easy to start and the sputtering is stable.

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Abstract

The invention provides a tin oxide target. The tin oxide target is used for preparing stannous oxide films and comprises elemental Sn and SnO2 which are mixed evenly. The atomic ratio of Sn atoms to O atoms in the tin oxide target is greater than 1:2 but smaller than or equal to 2:1. The invention further provides a preparation method of the tin oxide target.

Description

technical field [0001] The invention belongs to the technical field of semiconductor display, and in particular relates to a tin oxide target material and a preparation method thereof. Background technique [0002] At present, n-type oxide thin film transistor (Thin Film Transitor, TFT) has made important progress. However, from the perspective of application, n-type TFT is prone to threshold voltage fluctuations caused by OLED voltage changes due to the definition of gate and source. , affecting the brightness stability of the OLED. The use of p-channel TFTs can effectively avoid this problem. At the same time, the work function of p-type semiconductors is generally relatively large, and its hole injection efficiency is higher, which is also very important for improving the luminous efficiency of OLEDs. However, there are still few p-type oxide TFT materials with high mobility. [0003] SnO (or tin monoxide, chemical formula SnO) is an important p-type semiconductor, wide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35B22F3/12
CPCC04B35/457C04B35/6261C04B35/645C04B35/6455C04B2235/40C04B2235/604C04B2235/6562C04B2235/661C04B2235/72C04B2235/725C04B2235/77C23C14/06C23C14/086C23C14/3414
Inventor 庄大明赵明郭力曹明杰李晓龙孙汝军
Owner TSINGHUA UNIV
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