10 results about "Boron carbonitride" patented technology

Transistor devices are provided. A transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor that is on top of the lower transistor. Moreover, the transistor device includes an isolation region that separates the upper transistor from the lower transistor. The isolation region has a dielectric constant that is lower than that of silicon nitride and lower than that of silicon boron carbonitride. Related methods of forming transistor devices are also provided.

The invention provides a semiconductor element and a preparation method thereof. The semiconductor element comprises a substrate; a gate electrode disposed on the substrate; a source region and a drain region disposed within the bottom and on opposite sides of the gate electrode; an isolation layer disposed over the substrate and the gate electrode; a plurality of metal contacts disposed in the gate electrode, the source region, and the drain region; a plurality of conductive plugs disposed in the isolation layer and electrically coupled to the metal contacts; a contact pad surrounding the conductive plug; and the filling layer is arranged in the isolation layer. The filling layer contains boron carbonitride.

A pellicle for protecting a photomask from contaminant particles during photolithography is provided. The pellicle includes a pellicle membrane having a network of boron carbonitride (BCN) nanostructures. The pellicle membrane is attached to a pellicle frame that is mounted to a photomask to be used during photolithography operations.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of conductive layers positioned on the substrate; a filling layer positioned between the plurality of conductive layers; an air gap positioned in the filling layer; and a dielectric layer positioned on the plurality of conductive layers and the filling layer. The filling layer includes boron carbonitride.

The present invention provides a photomask protection film for protecting a photomask from contamination particles during lithography. The photomask pellicle includes a photomask pellicle having a boron carbonitride (BCN) nanostructured network. The photomask pellicle is affixed to a photomask pellicle frame, which is mounted to a photomask used during a lithographic operation.

[Problem] To provide a method for efficiently forming a carbon boron nitride-containing film on a substrate; a substrate on which a carbon boron nitride-containing film has been formed by the method; and a product comprising the substrate. [Solution] For example, a carbon-nitrogen source compound represented by formula (1) is used: R13E-N = C = N-ER13 [in formula (1), E is independently Si, Ge, or Sn, and R1 is independently a linear or cyclic C1-C6 alkyl group, C2-C6 alkenyl group, or C1-C6 alkynyl group].

The invention provides a semiconductor element and a preparation method thereof. The semiconductor element comprises a substrate; a gate electrode disposed on the substrate; a source region and a drain region disposed within the substrate and on opposite sides of the gate electrode; an isolation layer disposed over the substrate and the gate electrode; a plurality of metal contacts disposed in the gate electrode, the source region, and the drain region; a plurality of conductive plugs disposed in the isolation layer and electrically coupled to the metal contacts; a contact pad surrounding the conductive plug; and the filling layer is arranged in the isolation layer. The filling layer contains boron carbonitride.

A transistor device and a method of forming a transistor device are provided. The transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor on top of the lower transistor. Further, the transistor device includes an isolation region separating the upper transistor from the lower transistor. The isolation region has a dielectric constant lower than the dielectric constant of the silicon nitride and lower than the dielectric constant of the silicon boron carbonitride. Related methods of forming transistor devices are also provided.

A method is provided for forming a layer comprising boron carbonitride on a substrate using a plasma-enhanced atomic layer deposition (PEALD) process. The method includes performing multiple deposition cycles. Each deposition cycle includes a boron halide precursor pulse and a carbon-containing precursor pulse, wherein the boron halide precursor pulse exposes the substrate to a boron precursor, and the carbon-containing precursor pulse exposes the substrate to a carbon-containing precursor. The deposition cycle also includes a plasma pulse, which exposes the substrate to a plasma treatment. The plasma treatment includes generating plasma.

The present disclosure provides a substrate holder for use in a lithographic apparatus configured to support a substrate, comprising: a body having a body surface; a plurality of first support elements protruding from the body surface, the first support elements supporting the substrate having a first height; a sealing unit including a first sealing member having an upper surface and a second height and positioned radially outward of and around the plurality of first support elements; and a plurality of second support elements positioned radially outward of the first sealing member, where the second support elements have a distal surface configured to support a substrate and a first height. The plurality of first support elements, the first sealing member, or the plurality of second support elements includes a coating made of diamond-like carbon, diamond, silicon carbide, boron nitrite, or boron nitride carbon, and the coating forms distal end surfaces of the plurality of support elements and / or forms an upper surface of the first sealing member. A lithographic apparatus is also disclosed.