4 results about "Boron carbonitride" patented technology

A pellicle for protecting a photomask from contaminant particles during photolithography is provided. The pellicle includes a pellicle membrane having a network of boron carbonitride (BCN) nanostructures. The pellicle membrane is attached to a pellicle frame that is mounted to a photomask to be used during photolithography operations.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of conductive layers positioned on the substrate; a filling layer positioned between the plurality of conductive layers; an air gap positioned in the filling layer; and a dielectric layer positioned on the plurality of conductive layers and the filling layer. The filling layer includes boron carbonitride.

[Problem] To provide a method for efficiently forming a carbon boron nitride-containing film on a substrate; a substrate on which a carbon boron nitride-containing film has been formed by the method; and a product comprising the substrate. [Solution] For example, a carbon-nitrogen source compound represented by formula (1) is used: R13E-N = C = N-ER13 [in formula (1), E is independently Si, Ge, or Sn, and R1 is independently a linear or cyclic C1-C6 alkyl group, C2-C6 alkenyl group, or C1-C6 alkynyl group].

A method is provided for forming a layer comprising boron carbonitride on a substrate using a plasma-enhanced atomic layer deposition (PEALD) process. The method includes performing multiple deposition cycles. Each deposition cycle includes a boron halide precursor pulse and a carbon-containing precursor pulse, wherein the boron halide precursor pulse exposes the substrate to a boron precursor, and the carbon-containing precursor pulse exposes the substrate to a carbon-containing precursor. The deposition cycle also includes a plasma pulse, which exposes the substrate to a plasma treatment. The plasma treatment includes generating plasma.