7 results about "Boron carbonitride" patented technology

Transistor devices are provided. A transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor that is on top of the lower transistor. Moreover, the transistor device includes an isolation region that separates the upper transistor from the lower transistor. The isolation region has a dielectric constant that is lower than that of silicon nitride and lower than that of silicon boron carbonitride. Related methods of forming transistor devices are also provided.

A pellicle for protecting a photomask from contaminant particles during photolithography is provided. The pellicle includes a pellicle membrane having a network of boron carbonitride (BCN) nanostructures. The pellicle membrane is attached to a pellicle frame that is mounted to a photomask to be used during photolithography operations.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of conductive layers positioned on the substrate; a filling layer positioned between the plurality of conductive layers; an air gap positioned in the filling layer; and a dielectric layer positioned on the plurality of conductive layers and the filling layer. The filling layer includes boron carbonitride.

The present invention provides a photomask protection film for protecting a photomask from contamination particles during lithography. The photomask pellicle includes a photomask pellicle having a boron carbonitride (BCN) nanostructured network. The photomask pellicle is affixed to a photomask pellicle frame, which is mounted to a photomask used during a lithographic operation.

[Problem] To provide a method for efficiently forming a carbon boron nitride-containing film on a substrate; a substrate on which a carbon boron nitride-containing film has been formed by the method; and a product comprising the substrate. [Solution] For example, a carbon-nitrogen source compound represented by formula (1) is used: R13E-N = C = N-ER13 [in formula (1), E is independently Si, Ge, or Sn, and R1 is independently a linear or cyclic C1-C6 alkyl group, C2-C6 alkenyl group, or C1-C6 alkynyl group].

A transistor device and a method of forming a transistor device are provided. The transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor on top of the lower transistor. Further, the transistor device includes an isolation region separating the upper transistor from the lower transistor. The isolation region has a dielectric constant lower than the dielectric constant of the silicon nitride and lower than the dielectric constant of the silicon boron carbonitride. Related methods of forming transistor devices are also provided.

A method is provided for forming a layer comprising boron carbonitride on a substrate using a plasma-enhanced atomic layer deposition (PEALD) process. The method includes performing multiple deposition cycles. Each deposition cycle includes a boron halide precursor pulse and a carbon-containing precursor pulse, wherein the boron halide precursor pulse exposes the substrate to a boron precursor, and the carbon-containing precursor pulse exposes the substrate to a carbon-containing precursor. The deposition cycle also includes a plasma pulse, which exposes the substrate to a plasma treatment. The plasma treatment includes generating plasma.