This invention relates to a p-type doped CVD
diamond Schottky
radiation detector and its fabrication method. The
detector comprises a
metal electrode layer, an intrinsic
diamond layer, a p-type doped
diamond layer, and an HPHT
diamond substrate. These
layers are stacked in a
layered structure from top to bottom. The
metal electrode layer serves as the top
electrode, forming a Schottky contact with the intrinsic diamond layer. The intrinsic diamond layer, serving as the core functional region for
radiation detection, is grown using a homoepitaxial CVD process. The p-type doped diamond layer, serving as the back
contact layer, is grown on the surface of the HPHT
diamond substrate using an epitaxial CVD process. The fabrication method disclosed in this invention uses a commercially available HPHT
diamond substrate instead of natural diamond, combined with mature CVD epitaxial technology, offering advantages such as high product consistency, stable performance, controllable cost, and no need for an external power supply, making it suitable for
mass production.