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Magnetron sputtering preparation method of vanadium oxide

A technology of magnetron sputtering and vanadium oxide thin film, which is applied in sputtering coating, ion implantation coating, metal material coating process, etc., can solve the problems of increasing process difficulty, reducing process repeatability, etc. High rate, low substrate temperature, uniform sputtering effect

Inactive Publication Date: 2014-12-17
常州博锐恒电子科技有限公司
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Problems solved by technology

In the existing reactive sputtering process, in order to make the deposited vanadium oxide film have high value and low room temperature resistance, it is not only necessary to precisely control the process parameters of the deposited film to form a vanadium oxide film of appropriate composition, but also to Long-term thermal annealing at high temperature, which not only increases the difficulty of the process, but also reduces the repeatability of the process

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  • Magnetron sputtering preparation method of vanadium oxide

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Embodiment Construction

[0012] 1) Clean the surface of the silicon wafer to remove the polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. The process is as follows: mix concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 3:1 to prepare a cleaning solution, and clean the silicon wafer here Soak in the solution for 40 minutes, rinse the silicon chip with deionized water, then mix ammonia water, hydrogen peroxide and deionized water at a volume ratio of 1:40:50, soak the silicon chip for 30 minutes, and then rinse with deionized water. A layer of silicon oxide film is first deposited on the silicon wafer by PECVD method, the background vacuum is 4.5×10-1Pa, the working pressure is 4.3Pa, the substrate temperature is 150°C, the working gas is nitrous oxide and silane, and the gas flow rate 12ml / min and 38ml / min respectively, the deposition time is 10 minutes, and the thickness of the silicon dioxide layer is about 1000nm;

[0013] 2) Using the m...

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Abstract

The invention relates to a magnetron sputtering preparation method of vanadium oxide, and belongs to the technical field of film preparation. The preparation method comprises the following steps: step one, washing the surface of a silicon chip; step two, depositing a layer of silicon oxide film on the surface of the silicon chip; step three, utilizing target materials having the advantages of high utilization rate and uniform sputtering on film to carry out magnetron sputtering to deposit a vanadium film; wherein the technology conditions are as follows: the bottom vacuum is 3*10<-4> Pa, the argon / oxygen ratio is 100:1 to 140:1, the sputtering power is 150 W to 240 W, and the substrate temperature is 25 to 200 DEG C. The preparation method has the advantage that a vanadium oxide film having a high resistance temperature coefficient and a low room temperature resistance can be prepared just through changing the sputtering technological conditions without carrying out a high temperature hot treatment, and thus the film plating technology is simplified.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering coating, in particular to a method for preparing a vanadium oxide thin film. Background technique [0002] Vanadium dioxide thin film has the characteristics of phase transition from low-temperature semiconductor phase to high-temperature metal phase, accompanied by sudden changes in resistivity, magnetic susceptibility, light transmittance and reflectivity, so it has many applications in the fields of microelectronics and optoelectronics. Because vanadium is a polyvalent metal, it can combine with oxygen to form a variety of oxides, especially vanadium oxide mixed-phase polycrystalline film based on vanadium dioxide does not have temperature phase transition characteristics, but because it has extremely high The temperature coefficient of resistance can reach more than 5-10 times that of ordinary metal thin films. Therefore, the vanadium oxide mixed-phase polycrystalline film based ...

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 张磊
Owner 常州博锐恒电子科技有限公司
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