24 results about "Vanadium oxide thin films" patented technology

The invention belongs to the technical field of infrared focal plane sensor manufacturing, and particularly relates to a vanadium oxide etching post-processing method based on VHF wetting driving. Comprising the following steps: performing graded vacuumizing and temperature programming pretreatment on a wafer subjected to vanadium oxide etching, and continuously introducing VHF moistening mixed gas consisting of anhydrous hydrogen fluoride, ethanol steam and inert carrier gas into a treatment cavity; by accurately regulating and controlling the temperature and pressure of the cavity, anhydrous hydrogen fluoride is promoted to be subjected to a selective fluorination reaction with photoresist decomposition products and metal impurities left after etching to generate gaseous products, and ethanol steam synchronously exerts the dual effects of moistening, corrosion prevention and water molecule desorption promotion. According to the method, a gas phase processing mode is adopted in the whole process, liquid intervention is avoided, the problems of vanadium oxide pixel adhesion and film corrosion can be effectively solved, meanwhile, residual impurities are thoroughly removed, the electrical property stability of the vanadium oxide film is guaranteed, the yield and detection precision of the infrared focal plane sensor are remarkably improved, and the method has good industrial application prospects.

The application provides a method for preparing an M-phase VO2 film by a light-assisted spray pyrolysis method and the M-phase VO2 film prepared by the method, and belongs to the field of nanometer materials. The method comprises the following steps: (1) preparing a vanadium dioxide spraying liquid: adding vanadium oxyacetonylacetone into anhydrous methanol, stirring and aging to obtain a vanadium dioxide spraying liquid with ultraviolet photosensitive properties; (2) preparing a vanadium dioxide film: introducing the vanadium dioxide spraying liquid in step (1) into an atomizer and spraying onto a substrate coated with a TiO2 anatase phase under ultraviolet light irradiation to obtain the M-phase VO2 film. The method enables vanadium ions to be chelated in the sol by stirring, and the vanadium dioxide spraying liquid has ultraviolet photosensitive properties. The purity of the VO2(M) film is improved by introducing a titanium dioxide transition layer, and the microstructure of the VO2(M) film is improved by ultraviolet light irradiation, thereby improving the visual transmittance and solar light regulation rate of the VO2(M) film.

Provided are an etching method of a vanadium oxide film and a film plating method of a semiconductor device. The etching method of the vanadium oxide film comprises: providing a base module comprising a substrate and silicon nitride, the silicon nitride being arranged on the substrate; arranging a mask; patterning photoresist; etching the exposed mask by using inductively coupled plasma etching with C / F-based gas and Ar gas to form a shallow groove, the bottom surface of the shallow groove being the top surface of the vanadium oxide film, and the side surface of the shallow groove being an inclined surface; removing the exposed vanadium oxide film by using inductively coupled plasma etching with Cl-based gas and Ar gas to make the side surface of the shallow groove more obliquely inclined until the etching enters the silicon nitride, to form an etching groove, the bottom wall of the etching groove being composed of the silicon nitride, the side wall of the etching groove being composed of the vanadium oxide and the silicon nitride, the side wall of the etching groove being continuous and coplanar with the re-etched side surface, and the included angle between the bottom wall and the side wall being less than or equal to 65°; and removing the photoresist to form a device module. The film plating method of the semiconductor device comprises plating a film along the etching groove of the device module.

This invention belongs to the field of micro / nano fiber fabrication technology. It discloses a vanadium dioxide-based micro / nano fiber temperature sensor and its fabrication method, including the following steps: (1) After removing a portion of the coating layer on the surface of a single-mode fiber, the fiber cladding in the area where the coating layer has been removed is etched or the area where the coating layer has been removed is heated and stretched using a melt stretching method to obtain a micro / nano fiber; (2) Vanadium metal is deposited onto the etched or stretched area of ​​the micro / nano fiber by magnetron sputtering to obtain a vanadium metal film with a nanometer-level thickness; (3) The deposited micro / nano fiber is annealed in an inert atmosphere to transform the vanadium metal film into an M-phase vanadium dioxide film, thereby obtaining a micro / nano fiber temperature sensor. This invention uses a method of magnetron sputtering to deposit a metal film followed by tube furnace annealing to obtain a vanadium dioxide thin film. The vanadium dioxide thin film can be prepared in a controllable manner, and the pure vanadium dioxide M-phase thin film can be prepared stably and repeatedly. Moreover, the thickness of the coating can be selected independently.

The application discloses a vanadium oxide etching method of a non-refrigeration infrared detector, and the method comprises the following steps: 1) providing a substrate, and forming a vanadium oxide film and a silicon nitride film on the surface of the substrate; 2) forming a patterned photoresist on the vanadium oxide film and the silicon nitride film; 3) etching the silicon nitride film to a depth of 1 / 3-2 / 3; 4) removing the photoresist; and 5) etching the vanadium oxide film to form a required vanadium oxide film structure by taking the silicon nitride film as a hard mask. The method removes the photoresist before etching the VOx film, and the silicon nitride is taken as the hard mask for etching, so that the influence of the traditional process of removing the photoresist after etching the VOx film on the vanadium oxide is avoided, meanwhile, the silicon nitride is taken as the hard mask and the protective layer of the VOx film and remains on the film, and it is not necessary to remove the silicon nitride. The quality of the vanadium oxide photosensitive layer is improved, the removing mode is diversified, and the device performance is effectively improved.

The invention discloses an adjusting separation blade for improving coating uniformity and vanadium oxide thin film deposition equipment, the adjusting separation blade comprises a separation blade body, the separation blade body is arranged above an air nozzle of the vanadium oxide thin film deposition equipment and located between a target material and a carrying table, a plurality of through holes are formed in the separation blade body, and the through holes are communicated with the separation blade body. The plurality of through holes are non-uniformly distributed on the separation blade body, and the distribution density and the size of the through holes are in negative correlation with the thickness distribution of the vanadium oxide film deposited without the separation blade, so that the through holes can accurately solve the problems of non-uniform thickness and non-uniform resistance of the vanadium oxide film, and the application of the separation blade is adjusted without depending on global process parameters such as temperature and pressure. The bottleneck of narrow optimization window in the prior art is broken through; according to the vanadium oxide thin film deposition equipment, by applying the adjusting separation blade, on one hand, large-scale transformation of existing core parts of the equipment is not needed, and on the other hand, the problems that the thickness of a thin film is thick in the middle and thin in the edge and the resistance is uneven due to high central oxygen and low edge oxygen in traditional equipment can be accurately solved.

The application provides a light-driven color-changing soft robot and a bionic insect. The robot is composed of a tungsten-doped vanadium dioxide layer, an oxide (fluoride) layer, an MXene layer and a paraffin layer. Through the photothermal effect, the soft robot is warmed up, and color change and driving are realized. Under the irradiation of excitation light, when the temperature of the soft robot exceeds the phase transition temperature of vanadium dioxide, the refractive index of the tungsten-doped vanadium dioxide film changes, thereby causing the color (infrared temperature) of the color-changing layer to change. At this time, due to the temperature rise of the soft robot, the paraffin layer produces thermal expansion, and the MXene layer does not produce thermal expansion, thereby causing the robot to deform. The robot described in the application can change its color (infrared temperature) according to the environment, work in a disguised state, and has broad application prospects in the military field.

This invention provides a physical vapor deposition method for preparing vanadium oxide thin films, comprising the following steps: Step S1, pre-sputtering: selecting a target material, adjusting the distance between the target material and the wafer, setting the substrate temperature to a preset temperature, the cavity vacuum degree to a preset vacuum degree, and pre-sputtering the target material at a preset power; Step S2, sputtering the semi-finished film: transferring the wafer to a magnetron sputtering vacuum cavity, introducing argon and oxygen into the magnetron sputtering cavity, setting the cavity reaction pressure and the target material input power, and obtaining a sputtered semi-finished film after sputtering; Step S3, post-sputtering treatment: spraying an electron beam into the magnetron sputtering cavity through an electron gun, continuing to introduce argon and oxygen into the magnetron sputtering cavity, setting the cavity reaction pressure and the target material input power, and obtaining the sputtered film. The vanadium oxide thin film prepared in this embodiment of the invention has high surface flatness and an average temperature coefficient of resistance of over -2.652% at 22–30°C.

The application provides a preparation method of lanthanum and sodium co-doped vanadium oxide (LaSVO) film, which comprises the following steps: adding vanadium pentoxide into a sodium chloride solution, adding lanthanum nitrate hexahydrate to mix uniformly to form a brown suspension, purifying the brown suspension to prepare a precursor solution, and adding a film forming aid to uniformly coat on ITO glass to form the LaSVO film. The application also provides a lanthanum and sodium double metal co-doped vanadium oxide inorganic zinc-based electrochromic cathode material, wherein the cathode material is a composite structure, namely, ITO glass coated with a LaSVO film on the surface. The LaSVO cathode material of the application shows very high electrochemical activity, bright color contrast during bleaching and coloring, extremely fast color switching and excellent cycle stability by comparison with electrodes without lanthanum doping and electrodes with a small amount of lanthanum doping.

This invention discloses a method for growing V2O5 nanowires based on phase separation. The method comprises the following steps: forming a tungsten-vanadium oxide thin film on a substrate using a sputtering coating technique; and annealing the thin film to induce crystallization and phase separation, thereby producing V2O5 nanowires grown on a WO3 substrate. This method, which utilizes only sputtering and annealing techniques to produce V2O5 nanowires, is simple and amenable to large-scale production. The preparation process does not require catalysts or other chemical reagents, making it environmentally friendly.

The present invention discloses a VO2 single crystal thin film grown on an amorphous substrate. The specific preparation steps include: 1) using vanadium oxide as a target, magnetron sputtering is performed in an inert atmosphere to form a disordered vanadium oxide thin film on the surface of the amorphous substrate; 2) the resulting disordered vanadium oxide film is placed in a reaction vessel, oxygen is introduced, and the pressure is adjusted, followed by heating for annealing and oxidation to obtain the VO2 single crystal thin film. This invention proposes for the first time the construction of high-quality VO2 single crystal thin films on amorphous substrates such as glass. The VO2 single crystal thin film exhibits a resistance change ratio of more than three orders of magnitude before and after phase transition, achieving both good electrical and optical properties. The preparation method is relatively simple and easy to operate, providing a new approach for the preparation of high-quality single crystal VO2 thin films.

This invention relates to a method for fabricating an electrically driven active VO2 / MXene metasurface terahertz modulator, utilizing a vacuum filtration method to prepare an MXene thin film. The MXene metasurface is fabricated using a laser direct writing method. A vanadium dioxide thin film is fabricated using magnetron sputtering. The vanadium dioxide thin film on a quartz substrate is completely immersed in a buffered oxide etchant (BOE). Using the prepared MXene metasurface, a self-supporting vanadium dioxide thin film is retrieved from water, suspending the vanadium dioxide film on the MXene metasurface. The VO2 / MXene composite metasurface is then left to stand for 1 hour to allow them to bond and dry, resulting in the VO2 / MXene composite metasurface. The MXene metasurface offers advantages such as high flexibility and ease of fabrication. The VO2 / MXene terahertz modulator features actively controllable terahertz waves, high modulation depth, and low trigger power.

The invention relates to a rapid annealing device for a vanadium oxide film, which is used for preparing a film material, and is characterized in that a halogen lamp group is used for heating and annealing a material carrying boat in a material containing disc on the lower side of the halogen lamp group, the position of the material carrying boat is regularly rearranged in the annealing process, and the material containing disc rotates under the action of a servo motor fixedly connected with the material containing disc; the multiple material carrying boats move to the edge position of the inner wall of the material containing disc under the action of rotating centrifugal force, after the material containing disc stops rotating, the magnetic blocks in the multiple material carrying boats repel each other due to the fact that like poles face upwards, and the multiple material carrying boats move irregularly under the action of repulsive force, so that the material carrying boats move to the edge position of the inner wall of the material containing disc. And finally, the material loading boats reach the balance position under the action of magnetic repulsive force, regular rearrangement of the multiple material loading boats is achieved, the possibility that the multiple vanadium oxide thin films are heated unevenly in the annealing process due to the position relation is reduced, the consistency of the vanadium oxide thin films is improved, and finally the finished product quality of the vanadium oxide thin films is improved.

The invention discloses a low-temperature preparation method of a high-uniformity vanadium oxide film and a vanadium oxide film, and the low-temperature preparation method of the high-uniformity vanadium oxide film comprises the steps: S1, carrying out the ultrasonic cleaning of an eight-inch P-type monocrystalline silicon wafer through an organic solvent and deionized water, etching the surface through a specific etching solution, and carrying out the washing and drying to form a substrate; s2, an Al2O3 ceramic target is used as a sputtering target material, and an Al2O3 buffer layer with the thickness of 5-10 nm is deposited in the magnetron sputtering chamber; s3, replacing the target with a metal vanadium target, introducing a ternary mixed gas of Ar, O2 and N2, dynamically controlling the O2 flow in a partitioned manner, and depositing a vanadium oxide film with the thickness of 50-100nm; and S4, carrying out in-situ rapid thermal annealing on the vanadium oxide thin film in the chamber, and carrying out stepped heating and cooling treatment. The method has the advantages that the parameter controllability is high, the repetition rate is high, and the high-performance vanadium oxide film can be prepared on a large scale.

The application discloses a terahertz electrically controlled metasurface full adder based on vanadium dioxide, which is composed of a terahertz reflector, a terahertz beam splitter and a plurality of integrated vanadium dioxide electrically controlled metasurface modulators. Each modulator unit comprises a dielectric plate, a patterned vanadium dioxide film, a T-shaped gold foil strip and an inverted T-shaped gold foil strip. When high and low levels are applied to the T-shaped and inverted T-shaped feed lines on one side of the modulator respectively, a voltage difference causes a current to flow through the vanadium dioxide film sandwiched in the middle, and the vanadium dioxide film is converted from an insulating state to a metallic state, thereby changing the electromagnetic transmission characteristics of the modulator. The output switching threshold is set at the working frequency point, and the switching function of the modulator is realized. When the input electrode reaches a specific configuration, the transmittance of the terahertz wave is taken as the output, and under the combined action of various components, the logic operation function of a one-bit full adder is finally realized. The electric-optic hybrid combination logic gate device can be applied to digital terahertz circuits and integrated photonic devices.

The application belongs to the technical field of laser protection, and particularly relates to a laser protection device based on a curled vanadium dioxide composite film structure and a preparation method thereof. The laser protection device comprises a calcium fluoride glass substrate and an array of curled three-dimensional structure units prepared on the substrate; the three-dimensional structure units in the array comprise a vanadium dioxide film, a chromium film and a silver film, the composite film is curled into a three-dimensional structure from a planar state through a self-curling technology; wherein the vanadium dioxide film is an excited actuating layer, the chromium film is an adhesion layer and a stress layer, and the silver film is a laser reflection layer. The application utilizes the thermal deformation of the vanadium dioxide film and the reflection function of the silver film to realize intelligent protection of not affecting light transmission when there is no laser and self-developing reflected laser when laser is incident. The device has a simple preparation method, low cost, can be produced on a large scale, and has wide practical significance.

The invention discloses a vanadium oxide film and a preparation method thereof, and the preparation method comprises the following steps: providing a substrate; preheating the substrate; growing a first doping layer on the substrate; growing a middle undoped layer on the first doped layer; growing a second doped layer on the middle undoped layer so as to form a growth layer on the substrate; and carrying out annealing treatment on the growth layer to obtain the vanadium oxide film. The compatibility with the substrate is improved through bottom layer doping, the lattice mismatch rate with the substrate is reduced, stress concentration at an interface is reduced, the phase change performance of VOO can be reserved through the middle non-doped layer, the middle non-doped VOO layer can be protected from being corroded by the external environment through the surface layer doping layer, and meanwhile through the diffusion barrier effect of doped elements, the performance of the VOO is improved. And the component offset of the undoped layer in the subsequent heat treatment is reduced.

Method for synchronously controlling optical frequency dielectric properties and phase transition temperature of vanadium oxide thin films. The present invention aims to solve the problem of VO2 thin film preparation process using magnetron sputtering technology. x The composition of the mixed phase is very sensitive to the oxygen flow rate, and the technical problem of poor stability of the VO2 thin film preparation process. Control method: 1. Ultrasonic cleaning of the substrate; 2. Cleaning of the metal target; 3. Connecting the V metal target to a DC power supply and the W metal target to an RF power supply; 4. Vacuuming; 5. Heating the substrate; 6. Ignition; 7. Pre-sputtering the target; 8. Controlling the oxygen flow rate so that the coating state is in a poisoning mode for thin film deposition; 9. Cooling; 10. Vacuuming in an annealing furnace; 11. Annealing. The present invention introduces W atoms to regulate the crystal structure and band structure of VO2 while making full use of the difference in electronegativity and atomic radius between W and V elements, thereby achieving synchronous regulation of microscopic electronic polarization response and optical frequency dielectric properties.

The invention provides a vanadium oxide physical vapor deposition method. The method comprises the following steps: sputtering a vanadium oxide film; performing high-pressure or ultrahigh-pressure annealing; and performing low-temperature vacuum secondary annealing. According to the method, high-pressure or ultrahigh-pressure oxygen atmosphere annealing is adopted, oxygen precipitation, caused by high-temperature annealing, of the vanadium oxide thin film is inhibited through high-concentration oxygen, atom arrangement of the thin film tends to be flat, oxygen hole sites and defects in the thin film are repaired, and therefore thin film component distribution is improved; and removing residual oxygen atoms in the thin film through low-temperature vacuum secondary annealing. The TCR performance of the vanadium oxide film prepared by the method is excellent, and the TCR at the temperature of 25 DEG C reaches up to-2.8% or above.

The invention discloses a laser radio frequency switch based on vanadium dioxide and a preparation method thereof, and belongs to the technical field of microwaves. The radio frequency switch comprises a substrate, a phase change layer, a laser absorption layer, a radio frequency transmission layer and a laser unit which are sequentially arranged from bottom to top. Wherein the substrate is made of a sapphire material; the phase change layer is a high-quality vanadium dioxide film and is used for realizing on-off control of a radio frequency signal; the laser absorption layer is a titanium nitride film, has excellent 1550nm infrared laser absorption performance, and can quickly convert laser energy into heat and transfer the heat to the vanadium dioxide phase change layer below; the radio frequency transmission layer adopts a metal coplanar waveguide structure, is positioned above the laser heat absorption layer and is used for transmitting high-frequency signals; laser irradiation vertically acts on the top of the device, the phase change layer is accurately heated in a non-contact mode, rapid conversion of the phase change layer from an insulation state to a metal state is achieved, and therefore switching regulation and control of radio frequency signals are completed. Compared with a traditional electric pulse mode, the power divider has the advantages of being fast in response, low in power consumption, simple in structure, high in process compatibility and the like, and is suitable for high-frequency electronic systems of 5G communication, millimeter wave radar, terahertz modulation and the like.

The application provides an optical JK flip-flop device based on superstructure, which is suitable for realizing optical coding in a specific frequency band and realizing the function of JK flip-flop. The substrate of the device is silicon (Si), the input port is composed of lithium niobate (LiNbO3), the output port is composed of silicon nitride (Si3N4), the temperature control port is composed of barium tungstate (BaWO4), the chemical potential control port is composed of aluminum nitride (AlN), the main key part adopts a symmetric superstructure with double-face characteristics, and different transmission peaks can be generated under different electromagnetic wave incidence angles. The symmetric superstructure with double-face characteristics comprises upper and lower substrates, left and right substrates, aerogel layers, plasma thin film layers and vanadium dioxide (VO2) thin film layers. In the frequency band of 49 GHz-51 GHz, the difference between forward incidence and backward incidence is adjusted to realize the JK flip-flop through coding.

This invention discloses a method for preparing 2.5-inch vanadium dioxide thin films, belonging to the field of vanadium dioxide thin film preparation technology. Addressing the problem in the prior art where the atmosphere inside the tube furnace easily fluctuates during heat treatment in the PAD method for preparing vanadium dioxide thin films, thus affecting the quality of the prepared vanadium dioxide thin films, the purpose of this invention is to provide a rectification method for preparing 2.5-inch vanadium dioxide thin films. This invention designs an airflow homogenization device, which ensures that the airflow entering the tube furnace is stably and uniformly dispersed around the ceramic boat, thereby providing a stable heat treatment atmosphere. This allows for the acquisition of high-quality vanadium dioxide thin films, and the device is simple and easy to operate.

The invention discloses a preparation method and application of a nano composite material with infrared stealth energy storage, and relates to the technical field of new materials. According to the invention, cooperation is formed through efficient energy storage of MXene and infrared protection of vanadium dioxide, during normal work, the MXene supercapacitor continuously stores electric energy, and long-acting energy support is provided for the sensor to stably monitor the environment temperature; meanwhile, the vanadium dioxide film plays an infrared protection role, can reflect infrared radiation in an external environment, prevents high-temperature infrared energy from damaging internal elements of the sensor and has excellent reversible phase change and cycling stability, the reversible phase change characteristic of the vanadium dioxide film is deeply matched with the energy storage cycling stability of MXene, and the performance of the sensor is improved. And the infrared protection function of vanadium dioxide runs through the whole process. In multiple temperature rising and falling cycles, vanadium dioxide can be stably switched between a semiconductor phase and a conductor phase, the phase change performance is not attenuated, infrared radiation is continuously blocked, and a sensor core module is protected.

The present invention discloses a vanadium dioxide thin film, its preparation method, and application. Vanadium dioxide powder is added to an organic solvent and mixed evenly to form a mixed solution. A polymer additive is then added to the solution and mixed evenly to obtain a suspension. Iodine is added to the suspension and mixed evenly to obtain a vanadium dioxide deposition solution. The vanadium dioxide deposition solution is deposited on a conductive glass substrate using an electrophoretic deposition method, and the obtained film is heat-treated to obtain a vanadium dioxide thin film material. In the present invention, adding a polymer additive to the vanadium dioxide deposition solution can effectively improve the bonding force and adhesion strength between the film and the substrate. The vanadium dioxide film is not easy to fall off after being placed for a long time. The vanadium dioxide film prepared by the electrophoretic deposition method can achieve uniform distribution and uniform doping of the material microstructure.