40 results about "Vanadium oxide thin films" patented technology

The invention discloses a composite thermochromic window with a dual-band dynamic regulation and control function. The composite thermochromic window comprises a first transparent substrate, a tungsten-doped vanadium dioxide film, a second transparent substrate and a hydrogel layer. The tungsten-doped vanadium dioxide film is deposited on the upper surface of the first transparent substrate, and the phase transition temperature is 25-32 DEG C; the hydrogel layer is thermo-sensitive poly (N-isopropylacrylamide) and is encapsulated between the two transparent substrates, and the low critical phase transition temperature is 32 + / -2 DEG C. When the temperature is lower than 25 DEG C, the infrared transmittance of the tungsten-doped vanadium dioxide film is larger than or equal to 75%, and the visible light scattering rate of the hydrogel layer is smaller than or equal to 10%; when the temperature is higher than 32 DEG C, the near-infrared transmittance of the tungsten-doped vanadium dioxide film is reduced to the minimum value, and the visible light scattering rate of the hydrogel layer is increased to 35% or above. Compared with the prior art, the system and the method have the advantages that dual-band dynamic regulation and control of visible light and near-infrared light are achieved, the indoor photo-thermal environment can be automatically regulated according to the environment temperature, and the building energy utilization efficiency is improved.

The invention provides a light-driven color-changing soft robot and a bionic insect. The robot is composed of a tungsten-doped vanadium dioxide layer, an oxide (fluoride) layer, an MXene layer and a paraffin layer. Through the photothermal effect, the temperature of the soft robot is increased, and color changing and driving are achieved. Under the irradiation of exciting light, when the temperature of the soft robot exceeds the phase transition temperature of vanadium dioxide, the refractive index of the tungsten-doped vanadium oxide film is changed, so that the color (infrared temperature) of the color-changing layer is changed. At the moment, due to the fact that the temperature of the soft robot rises, the paraffin layer generates thermal expansion, the MXene layer does not generate thermal expansion, and therefore the robot deforms. The robot can actively change the color (infrared temperature) according to the environment, works in a disguise state, and has wide application prospects in the military field.

The invention belongs to the technical field of infrared focal plane sensor manufacturing, and particularly relates to a vanadium oxide etching post-processing method based on VHF wetting driving. Comprising the following steps: performing graded vacuumizing and temperature programming pretreatment on a wafer subjected to vanadium oxide etching, and continuously introducing VHF moistening mixed gas consisting of anhydrous hydrogen fluoride, ethanol steam and inert carrier gas into a treatment cavity; by accurately regulating and controlling the temperature and pressure of the cavity, anhydrous hydrogen fluoride is promoted to be subjected to a selective fluorination reaction with photoresist decomposition products and metal impurities left after etching to generate gaseous products, and ethanol steam synchronously exerts the dual effects of moistening, corrosion prevention and water molecule desorption promotion. According to the method, a gas phase processing mode is adopted in the whole process, liquid intervention is avoided, the problems of vanadium oxide pixel adhesion and film corrosion can be effectively solved, meanwhile, residual impurities are thoroughly removed, the electrical property stability of the vanadium oxide film is guaranteed, the yield and detection precision of the infrared focal plane sensor are remarkably improved, and the method has good industrial application prospects.

The invention discloses a magnetron sputtering process and a coating device for improving the content of vanadium dioxide in films, a first film and a second film are deposited on the surface of a substrate through two times of magnetron sputtering, and oxygen flows of process gases used twice are different, so that an oxygen-enriched vanadium oxide film and an oxygen-deficient vanadium oxide film are prepared; the surface-coated substrate is put into an annealing cavity, the temperature in the annealing cavity is maintained at 150-350 DEG C, oxygen atoms can obtain enough energy to overcome lattice potential barriers and start to move at the temperature, the oxygen atoms can spontaneously diffuse from a high-concentration oxygen-enriched layer to a low-concentration oxygen-deficient layer, and finally uniform distribution of oxygen elements in the thin film is achieved; and finally, a film with relatively high vanadium dioxide content and uniform components is formed.

The application provides a method for preparing an M-phase VO2 film by a light-assisted spray pyrolysis method and the M-phase VO2 film prepared by the method, and belongs to the field of nanometer materials. The method comprises the following steps: (1) preparing a vanadium dioxide spraying liquid: adding vanadium oxyacetonylacetone into anhydrous methanol, stirring and aging to obtain a vanadium dioxide spraying liquid with ultraviolet photosensitive properties; (2) preparing a vanadium dioxide film: introducing the vanadium dioxide spraying liquid in step (1) into an atomizer and spraying onto a substrate coated with a TiO2 anatase phase under ultraviolet light irradiation to obtain the M-phase VO2 film. The method enables vanadium ions to be chelated in the sol by stirring, and the vanadium dioxide spraying liquid has ultraviolet photosensitive properties. The purity of the VO2(M) film is improved by introducing a titanium dioxide transition layer, and the microstructure of the VO2(M) film is improved by ultraviolet light irradiation, thereby improving the visual transmittance and solar light regulation rate of the VO2(M) film.

The invention provides a temperature-sensitive vanadium oxide doped film, a preparation method thereof and an infrared conversion functional structure, and the preparation method of the temperature-sensitive vanadium oxide doped film comprises the following steps: growing a V2O5 layer, a free metal vanadium layer and a doped metal layer which are stacked to form a temperature-sensitive layer; and the thermosensitive layer is heated, so that V2O5, free metal vanadium and doped metal of the thermosensitive layer are diffused and fused, and the doped thermosensitive vanadium oxide film is obtained. The doped thermosensitive vanadium oxide thin film adopts a laminated structure form, and a doped metal element and a matrix vanadium element are fused in a high-temperature diffusion manner, so that the doped vanadium oxide thin film which is uniform in doping and lossless in surface is obtained, the doped thermosensitive vanadium oxide thin film can be obtained by utilizing a common semiconductor process, and complicated equipment and expensive materials are prevented from being used; and the resistance value of the thermosensitive film is regulated and controlled by utilizing the thicknesses of the V2O5 layer, the free metal vanadium layer and the doped metal layer, so that the resistance value requirement of a signal processing circuit is further matched, the regulation and control mode is simple, and the cost is low.

The invention discloses a method for preparing a vanadium dioxide film based on radio frequency magnetron sputtering and the prepared vanadium dioxide film, and belongs to the technical field of vanadium dioxide films. The method for preparing the vanadium dioxide film based on radio frequency magnetron sputtering comprises the following steps: taking a vanadium pentoxide target as a target material, taking argon gas with the flow rate of 4-8sccm as sputtering gas, coating a film by adopting a vacuum radio frequency magnetron sputtering method at the sputtering power of 80-150W and the temperature of 600-700 DEG C, and carrying out in-situ reaction, the proportion of V atoms and O atoms in the sputtering process is adjusted through argon flow, the sputtering speed of the V atoms and the O atoms in the sputtering process is adjusted through sputtering power, and then the vanadium dioxide film is prepared through crystallization. The preparation method does not need a high-oxygen environment and an annealing step, and is simple and convenient to operate.

Provided are an etching method of a vanadium oxide film and a film plating method of a semiconductor device. The etching method of the vanadium oxide film comprises: providing a base module comprising a substrate and silicon nitride, the silicon nitride being arranged on the substrate; arranging a mask; patterning photoresist; etching the exposed mask by using inductively coupled plasma etching with C / F-based gas and Ar gas to form a shallow groove, the bottom surface of the shallow groove being the top surface of the vanadium oxide film, and the side surface of the shallow groove being an inclined surface; removing the exposed vanadium oxide film by using inductively coupled plasma etching with Cl-based gas and Ar gas to make the side surface of the shallow groove more obliquely inclined until the etching enters the silicon nitride, to form an etching groove, the bottom wall of the etching groove being composed of the silicon nitride, the side wall of the etching groove being composed of the vanadium oxide and the silicon nitride, the side wall of the etching groove being continuous and coplanar with the re-etched side surface, and the included angle between the bottom wall and the side wall being less than or equal to 65°; and removing the photoresist to form a device module. The film plating method of the semiconductor device comprises plating a film along the etching groove of the device module.

This invention belongs to the field of micro / nano fiber fabrication technology. It discloses a vanadium dioxide-based micro / nano fiber temperature sensor and its fabrication method, including the following steps: (1) After removing a portion of the coating layer on the surface of a single-mode fiber, the fiber cladding in the area where the coating layer has been removed is etched or the area where the coating layer has been removed is heated and stretched using a melt stretching method to obtain a micro / nano fiber; (2) Vanadium metal is deposited onto the etched or stretched area of ​​the micro / nano fiber by magnetron sputtering to obtain a vanadium metal film with a nanometer-level thickness; (3) The deposited micro / nano fiber is annealed in an inert atmosphere to transform the vanadium metal film into an M-phase vanadium dioxide film, thereby obtaining a micro / nano fiber temperature sensor. This invention uses a method of magnetron sputtering to deposit a metal film followed by tube furnace annealing to obtain a vanadium dioxide thin film. The vanadium dioxide thin film can be prepared in a controllable manner, and the pure vanadium dioxide M-phase thin film can be prepared stably and repeatedly. Moreover, the thickness of the coating can be selected independently.

The invention discloses a tungsten-doped vanadium oxide thin film for a thermal meter type infrared detector and a preparation method of the tungsten-doped vanadium oxide thin film. The tungsten doping proportion of the tungsten-doped vanadium oxide thin film is changed in a gradient mode in the direction perpendicular to the thin film, multiple layers of vanadium oxide thin films with the tungsten doping concentration changing from low to high or from high to low in a stepped mode are sequentially grown on the surface of a substrate, and then annealing is conducted to enable the concentration gradient of doped tungsten atoms to become smooth. And the integrated gradient tungsten-doped vanadium oxide film is formed. The gradient tungsten-doped vanadium oxide thin film has high TCR in a wide temperature window, is applied to a thermometer type infrared detector as a heat-sensitive material, can greatly improve the sensitivity of the infrared detector, and can be used in complex application scenes.

The application discloses a vanadium oxide etching method of a non-refrigeration infrared detector, and the method comprises the following steps: 1) providing a substrate, and forming a vanadium oxide film and a silicon nitride film on the surface of the substrate; 2) forming a patterned photoresist on the vanadium oxide film and the silicon nitride film; 3) etching the silicon nitride film to a depth of 1 / 3-2 / 3; 4) removing the photoresist; and 5) etching the vanadium oxide film to form a required vanadium oxide film structure by taking the silicon nitride film as a hard mask. The method removes the photoresist before etching the VOx film, and the silicon nitride is taken as the hard mask for etching, so that the influence of the traditional process of removing the photoresist after etching the VOx film on the vanadium oxide is avoided, meanwhile, the silicon nitride is taken as the hard mask and the protective layer of the VOx film and remains on the film, and it is not necessary to remove the silicon nitride. The quality of the vanadium oxide photosensitive layer is improved, the removing mode is diversified, and the device performance is effectively improved.

The invention discloses an adjusting separation blade for improving coating uniformity and vanadium oxide thin film deposition equipment, the adjusting separation blade comprises a separation blade body, the separation blade body is arranged above an air nozzle of the vanadium oxide thin film deposition equipment and located between a target material and a carrying table, a plurality of through holes are formed in the separation blade body, and the through holes are communicated with the separation blade body. The plurality of through holes are non-uniformly distributed on the separation blade body, and the distribution density and the size of the through holes are in negative correlation with the thickness distribution of the vanadium oxide film deposited without the separation blade, so that the through holes can accurately solve the problems of non-uniform thickness and non-uniform resistance of the vanadium oxide film, and the application of the separation blade is adjusted without depending on global process parameters such as temperature and pressure. The bottleneck of narrow optimization window in the prior art is broken through; according to the vanadium oxide thin film deposition equipment, by applying the adjusting separation blade, on one hand, large-scale transformation of existing core parts of the equipment is not needed, and on the other hand, the problems that the thickness of a thin film is thick in the middle and thin in the edge and the resistance is uneven due to high central oxygen and low edge oxygen in traditional equipment can be accurately solved.

The invention discloses a method for growing a V2O5 nanowire based on phase separation. The method comprises the following steps: preparing a tungsten-vanadium oxide film on a substrate by adopting a sputter coating technology; and carrying out annealing treatment on the tungsten-vanadium oxide thin film, and inducing crystallization and phase separation processes of the tungsten-vanadium oxide thin film by the annealing treatment to obtain the V2O5 nanowire which takes WO3 as a substrate and grows on the WO3 substrate. The V2O5 nanowire can be prepared only through the sputter coating technology and the annealing technology, the technology is simple, large-scale production can be achieved, no catalyst or other chemical reagents are needed in the preparation process, and the method is environmentally friendly.

The application provides a light-driven color-changing soft robot and a bionic insect. The robot is composed of a tungsten-doped vanadium dioxide layer, an oxide (fluoride) layer, an MXene layer and a paraffin layer. Through the photothermal effect, the soft robot is warmed up, and color change and driving are realized. Under the irradiation of excitation light, when the temperature of the soft robot exceeds the phase transition temperature of vanadium dioxide, the refractive index of the tungsten-doped vanadium dioxide film changes, thereby causing the color (infrared temperature) of the color-changing layer to change. At this time, due to the temperature rise of the soft robot, the paraffin layer produces thermal expansion, and the MXene layer does not produce thermal expansion, thereby causing the robot to deform. The robot described in the application can change its color (infrared temperature) according to the environment, work in a disguised state, and has broad application prospects in the military field.

The invention relates to a method for preparing a vanadium dioxide flexible intelligent thermal control device through thermal treatment of vanadium nitride. The preparation method comprises the steps that magnetron sputtering and low-temperature heat treatment oxidation are adopted, a vanadium nitride thin film is sputtered on the surface of a substrate made of a polymer thin film, a silicon wafer and other materials, then the vanadium nitride thin film is transferred into a low-pressure oxygen-containing atmosphere cavity for heating oxidation treatment, the vanadium nitride thin film is converted into a vanadium dioxide thin film, and the intelligent thermal control device is formed. The core of the method is a technology for preparing the vanadium dioxide film through heat treatment of the vanadium nitride film, and the method has the advantages that the temperature adopted in the whole preparation period of an intelligent thermal control device is not higher than 400 DEG C, so that the vanadium dioxide can be prepared on the surface of the polymer substrate through the method, and the heat treatment condition for converting vanadium nitride into vanadium dioxide is simple and easy to control. The method is suitable for preparing the vanadium dioxide flexible intelligent thermal control device.

The present invention discloses a method for improving the contact between vanadium oxide and titanium electrode in a microbolometer, and the method can be used to improve the contact between vanadium oxide and titanium electrode in a microbolometer. First, the method uses ion implantation technology to use tungsten and titanium as doping elements, and the implantation area is the area in the vanadium oxide film that contacts the titanium electrode. Secondly, the selection of tungsten and titanium as implanted elements can effectively reduce the resistance of the vanadium oxide contact area, obtain excellent gold-semiconductor contact, thereby reducing the 1 / f noise of the vanadium oxide itself, and helping to obtain a low-noise device; in addition, by doping tungsten elements, the TCR of the vanadium oxide film can be increased, thereby improving the signal-to-noise ratio of the device. Third, the heat treatment method after ion implantation is pulse current rapid annealing, which can achieve lattice repair. At the same time, rapid annealing can avoid oxygen loss during the heating process, thereby reducing oxygen vacancies and preventing the resistance of the vanadium oxide from decreasing too much.

The present invention discloses a method for preparing a vanadium dioxide film, comprising the following steps: Step 1: Substrate cleaning: After the substrate is sequentially cleaned with deionized water, acetone, ethanol, and ultrasonically cleaned with deionized water, a nitrogen gun is used to blow the substrate dry for standby use; Step 2: A first vanadium metal layer is plated on the substrate using a magnetron sputtering method; Step 3: The first vanadium metal layer is oxidized to obtain a vanadium oxide layer; Step 4: A second vanadium metal layer is plated on the vanadium oxide layer using a magnetron sputtering method; Step 5: The substrate plated with the material is subjected to an annealing step. The preparation method of the present invention adjusts the vanadium / oxygen molar ratio in the overall film layer by re-plating a metal vanadium layer of different thicknesses according to the oxidation degree of the metal vanadium. The method has low requirements for film deposition and annealing, and the prepared VO2 film has excellent electrical properties. Before and after the phase change, the change amplitude of the square resistance can reach 4 orders of magnitude.

This invention provides a physical vapor deposition method for preparing vanadium oxide thin films, comprising the following steps: Step S1, pre-sputtering: selecting a target material, adjusting the distance between the target material and the wafer, setting the substrate temperature to a preset temperature, the cavity vacuum degree to a preset vacuum degree, and pre-sputtering the target material at a preset power; Step S2, sputtering the semi-finished film: transferring the wafer to a magnetron sputtering vacuum cavity, introducing argon and oxygen into the magnetron sputtering cavity, setting the cavity reaction pressure and the target material input power, and obtaining a sputtered semi-finished film after sputtering; Step S3, post-sputtering treatment: spraying an electron beam into the magnetron sputtering cavity through an electron gun, continuing to introduce argon and oxygen into the magnetron sputtering cavity, setting the cavity reaction pressure and the target material input power, and obtaining the sputtered film. The vanadium oxide thin film prepared in this embodiment of the invention has high surface flatness and an average temperature coefficient of resistance of over -2.652% at 22–30°C.

The application provides a preparation method of lanthanum and sodium co-doped vanadium oxide (LaSVO) film, which comprises the following steps: adding vanadium pentoxide into a sodium chloride solution, adding lanthanum nitrate hexahydrate to mix uniformly to form a brown suspension, purifying the brown suspension to prepare a precursor solution, and adding a film forming aid to uniformly coat on ITO glass to form the LaSVO film. The application also provides a lanthanum and sodium double metal co-doped vanadium oxide inorganic zinc-based electrochromic cathode material, wherein the cathode material is a composite structure, namely, ITO glass coated with a LaSVO film on the surface. The LaSVO cathode material of the application shows very high electrochemical activity, bright color contrast during bleaching and coloring, extremely fast color switching and excellent cycle stability by comparison with electrodes without lanthanum doping and electrodes with a small amount of lanthanum doping.

This invention discloses a method for growing V2O5 nanowires based on phase separation. The method comprises the following steps: forming a tungsten-vanadium oxide thin film on a substrate using a sputtering coating technique; and annealing the thin film to induce crystallization and phase separation, thereby producing V2O5 nanowires grown on a WO3 substrate. This method, which utilizes only sputtering and annealing techniques to produce V2O5 nanowires, is simple and amenable to large-scale production. The preparation process does not require catalysts or other chemical reagents, making it environmentally friendly.

The present invention discloses a VO2 single crystal thin film grown on an amorphous substrate. The specific preparation steps include: 1) using vanadium oxide as a target, magnetron sputtering is performed in an inert atmosphere to form a disordered vanadium oxide thin film on the surface of the amorphous substrate; 2) the resulting disordered vanadium oxide film is placed in a reaction vessel, oxygen is introduced, and the pressure is adjusted, followed by heating for annealing and oxidation to obtain the VO2 single crystal thin film. This invention proposes for the first time the construction of high-quality VO2 single crystal thin films on amorphous substrates such as glass. The VO2 single crystal thin film exhibits a resistance change ratio of more than three orders of magnitude before and after phase transition, achieving both good electrical and optical properties. The preparation method is relatively simple and easy to operate, providing a new approach for the preparation of high-quality single crystal VO2 thin films.

This invention relates to a method for fabricating an electrically driven active VO2 / MXene metasurface terahertz modulator, utilizing a vacuum filtration method to prepare an MXene thin film. The MXene metasurface is fabricated using a laser direct writing method. A vanadium dioxide thin film is fabricated using magnetron sputtering. The vanadium dioxide thin film on a quartz substrate is completely immersed in a buffered oxide etchant (BOE). Using the prepared MXene metasurface, a self-supporting vanadium dioxide thin film is retrieved from water, suspending the vanadium dioxide film on the MXene metasurface. The VO2 / MXene composite metasurface is then left to stand for 1 hour to allow them to bond and dry, resulting in the VO2 / MXene composite metasurface. The MXene metasurface offers advantages such as high flexibility and ease of fabrication. The VO2 / MXene terahertz modulator features actively controllable terahertz waves, high modulation depth, and low trigger power.

The invention relates to a rapid annealing device for a vanadium oxide film, which is used for preparing a film material, and is characterized in that a halogen lamp group is used for heating and annealing a material carrying boat in a material containing disc on the lower side of the halogen lamp group, the position of the material carrying boat is regularly rearranged in the annealing process, and the material containing disc rotates under the action of a servo motor fixedly connected with the material containing disc; the multiple material carrying boats move to the edge position of the inner wall of the material containing disc under the action of rotating centrifugal force, after the material containing disc stops rotating, the magnetic blocks in the multiple material carrying boats repel each other due to the fact that like poles face upwards, and the multiple material carrying boats move irregularly under the action of repulsive force, so that the material carrying boats move to the edge position of the inner wall of the material containing disc. And finally, the material loading boats reach the balance position under the action of magnetic repulsive force, regular rearrangement of the multiple material loading boats is achieved, the possibility that the multiple vanadium oxide thin films are heated unevenly in the annealing process due to the position relation is reduced, the consistency of the vanadium oxide thin films is improved, and finally the finished product quality of the vanadium oxide thin films is improved.

The invention discloses a low-temperature preparation method of a high-uniformity vanadium oxide film and a vanadium oxide film, and the low-temperature preparation method of the high-uniformity vanadium oxide film comprises the steps: S1, carrying out the ultrasonic cleaning of an eight-inch P-type monocrystalline silicon wafer through an organic solvent and deionized water, etching the surface through a specific etching solution, and carrying out the washing and drying to form a substrate; s2, an Al2O3 ceramic target is used as a sputtering target material, and an Al2O3 buffer layer with the thickness of 5-10 nm is deposited in the magnetron sputtering chamber; s3, replacing the target with a metal vanadium target, introducing a ternary mixed gas of Ar, O2 and N2, dynamically controlling the O2 flow in a partitioned manner, and depositing a vanadium oxide film with the thickness of 50-100nm; and S4, carrying out in-situ rapid thermal annealing on the vanadium oxide thin film in the chamber, and carrying out stepped heating and cooling treatment. The method has the advantages that the parameter controllability is high, the repetition rate is high, and the high-performance vanadium oxide film can be prepared on a large scale.

The application discloses a terahertz electrically controlled metasurface full adder based on vanadium dioxide, which is composed of a terahertz reflector, a terahertz beam splitter and a plurality of integrated vanadium dioxide electrically controlled metasurface modulators. Each modulator unit comprises a dielectric plate, a patterned vanadium dioxide film, a T-shaped gold foil strip and an inverted T-shaped gold foil strip. When high and low levels are applied to the T-shaped and inverted T-shaped feed lines on one side of the modulator respectively, a voltage difference causes a current to flow through the vanadium dioxide film sandwiched in the middle, and the vanadium dioxide film is converted from an insulating state to a metallic state, thereby changing the electromagnetic transmission characteristics of the modulator. The output switching threshold is set at the working frequency point, and the switching function of the modulator is realized. When the input electrode reaches a specific configuration, the transmittance of the terahertz wave is taken as the output, and under the combined action of various components, the logic operation function of a one-bit full adder is finally realized. The electric-optic hybrid combination logic gate device can be applied to digital terahertz circuits and integrated photonic devices.

The invention discloses a vanadium oxide etching method for an uncooled infrared detector, and the method comprises the steps: 1) providing a substrate, and forming a vanadium oxide film and a silicon nitride film on the surface of the substrate; 2) forming patterned photoresist on the vanadium oxide thin film and the silicon nitride thin film; 3) etching the silicon nitride thin film, wherein the depth is 1 / 3-2 / 3; 4) removing the photoresist; and 5) etching the vanadium oxide thin film by using the silicon nitride thin film as a hard mask to form the required vanadium oxide thin film structure. According to the method, the photoresist is removed before the VOx thin film is etched, and the silicon nitride is used as the hard mask for etching, so that the influence on the vanadium oxide in the traditional process of removing the photoresist after the VOx thin film is etched is avoided, and meanwhile, the silicon nitride is left on the thin film as the hard mask and a protective layer of the VOx thin film and does not need to be removed. The quality of the vanadium oxide photosensitive layer is improved, meanwhile, the photoresist removing modes are diversified, and the performance of the device is effectively improved.

The invention provides an optical JK trigger device based on a superstructure, which is suitable for realizing optical coding in a specific frequency band and realizing the function of a JK trigger. A substrate of the device is made of silicon (Si), an input port is composed of lithium niobate (LiNbO3), an output port is composed of silicon nitride (Si3N4), a temperature control port is composed of barium tungstate (BaWO4), a chemical potential control port is composed of aluminum nitride (AlN), a main body key part adopts a symmetrical super-structure with double-sided characteristics, and different transmission peaks can be generated under the condition of different electromagnetic wave incident angles. The symmetrical super-structure with the double-sided characteristic comprises an upper substrate, a lower substrate, a left substrate, a right substrate, an aerogel layer, a plasma thin film layer and a vanadium dioxide (VO2) thin film layer. In a frequency band of 49 GHz-51 GHz, coding is performed by regulating and controlling a direct difference between forward incidence and backward incidence so as to realize the JK trigger.

The present invention relates to the field of flexible temperature sensing technology, specifically a flexible temperature sensor based on a multi-component vanadium dioxide thin film and a preparation method thereof, including a PMMA substrate, a metal electrode disposed on the PMMA substrate, a multi-component VO2 thin film covering the metal electrode, and a substrate covering the multi-component VO2 thin film; the metal electrode is connected through a wire to realize signal input / output, the multi-component VO2 thin film is a VO2 thin film doped with elements W and Ti in a specific ratio, and the substrate is fluorophlogopite or mica. Compared with the prior art, the present invention can realize the preparation of a vanadium dioxide thin film flexible temperature sensor without expensive equipment and a strict vacuum environment, with low cost; the preparation process is simple and easy to implement, and has good mechanical properties, good anti-bending stability, light self-weight, and good bending stability.

The invention discloses a terahertz electronic control metasurface full adder based on vanadium dioxide. The terahertz electronic control metasurface full adder is composed of a terahertz reflector, a terahertz beam splitter and a plurality of electronic control metasurface modulators integrated with vanadium dioxide. Wherein each modulator unit comprises a dielectric plate, a patterned vanadium dioxide film, a T-shaped gold foil belt and an inverted T-shaped gold foil belt. When a high level and a low level are respectively applied to the T-shaped feeder line and the inverted T-shaped feeder line on one side of the modulator, a voltage difference causes current to flow through the vanadium dioxide thin film clamped in the middle, and the vanadium dioxide thin film is converted from an insulation state to a metal state, so that the electromagnetic transmission characteristic of the modulator is changed. And setting an output switching threshold at the working frequency point to realize the switching function of the modulator. And when the input electrode reaches a specific configuration, the transmissivity of the terahertz wave is used as output, and the logical operation function of the one-bit full adder is finally realized under the combined action of each component. The electro-optical hybrid combinational logic gate device can be applied to a digital terahertz circuit and an integrated photonic device.

The invention relates to a preparation process for vanadium dioxide (VO2) film patterning, and belongs to the field of vanadium dioxide film patterning. Aiming at the problems of VO2 film performance damage, process complexity, flexible substrate limitation and the like in the traditional photoetching and etching process, the invention provides the patterned VO2 preparation method. The method comprises the following steps: firstly, preparing a VO2 thin film on a silicon dioxide (SiO2) substrate by utilizing a magnetron sputtering and post-annealing preparation method; and then, forming a self-supporting VO2 thin film by adopting a nanopore permeation etching method. The self-supporting VO2 thin film is transferred to a substrate with an adhesive tape mask through a transfer method, the mask adhesive tape is taken down after the thin film is naturally air-dried, and VO2 thin film patterning is achieved. The method has the advantages that the method is simple and rapid, the cost is low, and the electrical and optical properties of the VO2 film are not damaged.