187 results about "Vanadium oxide thin films" patented technology

Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.

The invention discloses a hypovanadic oxide-based composite film with adjustable radiance and a preparation method thereof. The hypovanadic oxide-based composite film comprises a transparent underlay and a composite film; the composite film comprises a hypovanadic oxide film positioned on the underlay and a conductive metal film positioned on the hypovanadic oxide film; the composite film also comprises an inorganic transparent film; the thickness of the conductive metal film is between 2 and 30 nanometers; metal particles exist in a continuous particle form; and an inert transition layer is deposited on the transparent underlay. The preparation method disclosed by the invention has a simple process; and on the premise of keeping the thermochromism performance of the hypovanadic oxide, the obtained hypovanadic oxide-based composite film can effectively reduce the radiance of low-temperature phase thereof, is favorable for improving the thermal insulation performance of the low-temperature phase, and enlarges the application range of the hypovanadic oxide-based composite film serving as an energy-saving window.

The invention discloses a method for preparing a vanadium dioxide film. According to the method, metal vanadium or low-valence vanadium oxide film is annealed in oxygen and vacuum to obtain a phase-transition vanadium dioxide film; the most proper oxygen partial pressure, the annealing temperature and the annealing time are selected according to the type and thickness of the low-valence vanadium oxide to obtain a vanadium dioxide film with excellent performance, wherein the infrared regulation rate at 2,400nm can be 58 percent, and the visible light transmittance can be 43 percent; the doped low-valence vanadium oxide film is oxidized to obtain the doped vanadium dioxide film, and the phase transition temperature of the vanadium dioxide can be regulated by means of doping to adapt to different requirements. The vanadium dioxide film can be applied to optical information storage, photoelectric switches, intelligent windows and uncooled infrared focal plane imaging; the method is compatible with large-scale coated glass production process, and a vanadium dioxide film with excellent performance can grow on amorphous glass.

The present invention relates to a vanadium oxide thin film pattern which is fabricated by using APTS (3-aminopropyltriethoxysilane, H₂NC₃H₅Si(OCH₃)₃) or the like to prepare an APTS-SAM or the like on the surface of a substrate, irradiating this APTS-SAM with vacuum ultraviolet light through a photomask to thereby modify amino-terminal silanes into silanol groups in the exposed area, and then depositing vanadium oxide in a liquid phase using a patterned self-assembled monolayer having the amino-terminated silane surface and silanol group surface as a template for patterning the vanadium oxide, to a method of fabricating the same, and to a vanadium oxide device.

The invention discloses a quick thermal treatment method for preparing a vanadium dioxide film. The method comprises the following steps of: (1) cutting a silicon chip to form a substrate, and cleaning and drying the silicon substrate; (2) placing the silicon substrate of the step (1) in a vacuum chamber, and depositing a vanadium dioxide film on the silicon substrate by adopting a target magnetron sputtering method, wherein the target is 99.99 percent metallic vanadium, argon is used as a working gas and oxygen is used as a reaction gas; (3) putting the vanadium dioxide film product sputtered in the step (2) into a quick annealing furnace to prepare a vanadium dioxide film, wherein the annealing temperature is 500 to 550 DEG C, the heating rate is 50 DEG C per second, the heat preservation time is 10 to 30 seconds, cooling is performed within 3 minutes, and the protective gas is nitrogen; and (4) measuring. By the method, the thermal treatment time is shortened, and obvious phase change property can be obtained after the vanadium dioxide film product is quickly and thermally treated for 10 to 30 seconds; the method is simple in process control, high in repeatability and suitable for large-area production; and electric and optical properties of the vanadium dioxide film are optimized. The method is widely applied in the fields of infrared detectors, memories, optical communications and the like.

A method for preparing a vanadium dioxide film by using a magnetron sputtering process comprises: taking metal vanadium as a target material, taking argon as a sputtering gas, and taking oxygen as a reaction gas, performing sputtering so as to form the vanadium dioxide film on a substrate, and specifically controlling the deposition temperature to be 300-500 DEG C, the deposition total pressure to be 0.5-2.0 Pa and the oxygen partial pressure to be 1-5%. The method helps to overcome the disadvantage that a conventional preparation technology for a vanadium oxide film is complex, and also the prepared vanadium oxide film is a vanadium dioxide film with adjustable phase-transition temperature.

The invention discloses a vanadium oxide film for an infrared detector and a manufacturing method thereof. The film is a vanadium oxide-carbon nanotube composite film, which is formed by compositing one-dimensional carbon nanotubes and a two-dimensional vanadium oxide film. The film is used as a thermistor material and an infrared absorption material of the infrared detector. The infrared detector is manufactured by using the vanadium oxide-carbon nanotube composite film, so that negative effect on the chemical structure of a sensitive film in the conventional manufacturing technology is overcome, shortcomings of simple carbon nanotubes or a simple vanadium oxide material in the aspects of electrical property, optical property and the like can be overcome, and the comprehensive performance of the infrared detector can be improved at the same time. The manufacturing method of the vanadium oxide-carbon nanotube composite film disclosed by the invention is simple, does not need any complex and expensive film-forming equipment, reduces manufacturing cost, improves the serviceability of the infrared detector and is suitable for massive industrial production.

The preparation process of vanadium oxide film includes: cleaning substrate surface; sputtering vanadium film to the substrate in vacuum chamber after the substrate and the target being cleaned with parallel particle beam and focused particle beam; oxidizing the vanadium film in an annealing furnace heated in argon atmosphere and filled with oxygen to prepare vanadium oxide film; annealing the vanadium oxide film in pure argon atmosphere; and cooling in argon environment to room temperature. The said process results in compact film with high adhesion to the substrate, no need of strict control in reaction gas flow rate, high repeatability and capacity of preparing vanadium oxide film with different chemical composition for different requirement.

The invention relates to a preparation method of a thermosensitive-film infrared detector. The method comprises the following steps: depositing successively a sacrificial layer, a thermal-sensitive layer and a protective layer on a readout circuit of an infrared detector, wherein a material of the thermal-sensitive layer is vanadium oxide and the material of the protective layer is silicon nitride; simultaneously, imaging the protective layer and the thermal-sensitive layer; depositing a dielectric layer; etching a via and a contact, wherein the via etching ends at an electrode of the readoutcircuit and the contact etching ends at the thermal-sensitive layer surface; depositing a metal electrode layer and imaging the metal electrode layer; carrying out structure release of the sacrificial layer. In the method of the invention, the silicon nitride layer or SiO2 is added to be used as a protective layer of a vanadium oxide thermal-sensitive layer so that the vanadium oxide film, which is the thermal-sensitive layer, can be prevented from generating changes of a thermal property and an electrical property and influence on the detector performance can be reduced. Simultaneously, by using a high selection ratio of the silicon nitride etching to the vanadium oxide etching, the contact and the via can be used to complete the imaging of hole graphics through one lithographic plate.

The invention relates to a vanadium dioxide thin film and a preparation method thereof. The method comprises the following steps of: preparing a quadrivalent vanadium precursor growth solution; directly soaking a cleaned substrate in the growth solution and transferring into a high-pressure reaction kettle; performing hydrothermal reaction at the temperature of 150-250 DEG C for 0.5-96 hours; and preparing the vanadium dioxide thin film with flaky VO2 accumulation through induction effect of the substrate. The vanadium dioxide thin film prepared by the invention has a specific microcosmic shape (for example, flaky or rod-like VO2 accumulation), and is a thin film with a certain nanostructure, which cannot be realized by using the conventional thin film preparation process (for example, sol-gel, sputtering and the like); in addition, the nanostructure of the thin film has a certain difference from the microcosmic shape of the directly synthesized powder. The hydrothermally grown VO2 thin film has better crystallinity without being annealed.

The invention discloses a method for preparing a vanadium dioxide thin film with high temperature coefficient of resistance, which can be used for uncooled infrared detection. The method comprises the following steps: on a silicon substrate on which Si3N4 thin film or SiO2 thin film is deposited, a vanadium oxide thin film which is 50-200nm thick is deposited by using a reactive ion bean sputtering method; after the thin film is naturally cooled, sample wafers are taken out, and annealing is then performed. The thin film prepared using the method of the invention has a nanometer structure with 5-20nm of average crystalline grain, and has appropriate square resistance with temperature coefficient of resistance (TCR) from -5%/K to -7%/K in semiconductor region; in addition the prepared thin film has as equivalent noise level as the common nanometer structure vanadium dioxide. Therefore, the vanadium dioxide thin film is quite a potential uncooled infrared detection material.

The invention discloses a vanadium oxide thin film for a micro-metering bolometer and a preparation method thereof. The preparation method comprises the following steps of: (1) cleaning a substrate, and then blow-drying the substrate for later use; (2) putting a prepared original or functionalized carbon nanotube into a beaker to mix with an organic solvent, performing ultrasonic dispersion, and then transferring dispersion liquid to the surface of the cleaned substrate to volatilize the solvent and form crisscross and interconnected carbon nanotube films; (3) putting the substrate diffused with the carbon nanotube films and obtained in the step (2) in to a vacuumized reactor, growing a layer of vanadium oxide film by using the reactor, and performing annealing to form a vanadium oxide-carbon nanotube composite film structure, wherein the grown vanadium oxide film is diffused on the surface of the carbon nano-tube and in gaps between tubes; (4) cooling the vanadium oxide-carbon nanotube composite film structure to the room temperature, and taking the vanadium oxide-carbon nanotube composite film structure out of the reactor; and (5) repeating the steps of carbon nanotube diffusion, vanadium oxide sedimentation and annealing in turn as required to form a vanadium oxide-carbon nanotube multi-layer composite film structure.

The invention discloses a preparation method of a vanadium oxide film with a high resistance temperature coefficient. The preparation method comprises steps as follows: the surface of a monocrystal silicon substrate is cleaned, and the monocrystal silicon substrate is assembled in a growth chamber of a magnetron sputtering device; a silicon nitride film is sputtered on the surface of the monocrystal silicon substrate; a vanadium oxide film is deposited on the silicon nitride film; a zinc sulfide film is deposited on the vanadium oxide film; a vanadium oxide film is deposited on the zinc sulfide film; a deposited film sample is subjected to annealing treatment. According to the preparation method, high-temperature annealing treatment is not required, compatibility of vanadium oxide film preparation as well as an MEMS (micro-electromechanical systems) process and an integrated circuit technology is guaranteed, a vanadium oxide film material with moderate resistivity can be obtained, and the requirements of a high-performance vanadium oxide based uncooled infrared detector can be met.

A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

The invention discloses a phase-change vanadium dioxide thin film. The phase-change vanadium dioxide thin film comprises a base layer, wherein a vanadium dioxide nano-thin-film layer is arranged on the base layer; an infrared light-transmittance film layer is arranged on the vanadium dioxide nano-thin-film layer; the vanadium dioxide nano-thin-film layer is a vanadium dioxide thin film layer deposited by virtue of an ion beam reactive sputtering method; the infrared light-transmittance film layer is prepared by virtue of evaporation or sputtering plating of a high-refraction-rate film and a low-refraction-rate film and is prepared by virtue of alternative evaporation of six small layers including TiO2 thin films and SiO2 thin films. The phase-change vanadium dioxide thin film is capable of reflecting infrared light at high temperature and transmitting infrared light at low temperature, so that the purpose of automatically regulating the temperature is achieved; meanwhile, the performance is table.

The invention discloses an active-type infrared camouflage structure based on vanadium dioxide, and the structure comprises a heating substrate, a vanadium dioxide film, and an electrode pair. The vanadium dioxide film is disposed on the upper surface of the heating substrate in a manner of coating or vapor plating The heating substrate changes the temperature of the vanadium dioxide film through current heating while providing support for the vanadium dioxide film. The electrode pair is located at two ends of the heating substrate, and is connected with an external power supply and the heating substrate. The electrode pair is used for changing the temperature of the heating substrate, so as to adjust the change of the emissivity of vanadium dioxide. The structure can achieve low-power-consumption and quick adjustment infrared camouflage.

The invention relates to a method for preparing a monox infrared permeability increasing vanadium oxide film, and aims at solving the problems that the infrared transmittance of an existing VO2 film is low, and weather resistance is poor. The method comprises the first step of cleaning, the second step of preparing before film plating, the third step of VO2 film plating, the fourth step of annealing, the fifth step of SiO2 film plating and the sixth step of shutdown, and accordingly the method for preparing the monox infrared permeability increasing vanadium oxide film is finished. The method is used for preparing the monox infrared permeability increasing vanadium oxide film.

The invention discloses a preparation method and an application of a porous vanadium dioxide thin film. The preparation method comprises the following steps: by virtue of a magnetron sputtering method, preparing a C-doped metallic vanadium film from a graphite target and a metallic vanadium target; and then adding the C-doped metallic vanadium film in an annealing furnace and annealing in an atmospheric condition so as to obtain the porous vanadium dioxide thin film having a phase change effect. C doping content can be regulated by controlling the sputtering power of the two target materials, and the optimum annealing temperature and annealing time can be selected according to the C doping content and the thickness of the metallic vanadium film, so that the obtained vanadium dioxide thin film is excellent in performance; an infrared transmittance regulating amplitude can reach 45% and visible light transmittance can reach 70%. Normal glass, quartz glass or transparent conductive oxide glass can be used as a substrate of the thin film; and the thin film has a broad application prospect in the fields of smart windows, light storage devices, optoelectronic switches and the like.

The invention provides an amorphous vanadium oxide film material containing V6O13 crystals and a preparing method thereof. The method comprises the following steps: preparing a clean and dry silicon wafer; in a sputtering process, simultaneously introducing a metallic vanadium target used as a target material, the clean and dry silicon wafer used as a substrate, argon used as sputtering gas and oxygen used as reaction gas into a magnetically-controlled sputtering chamber, and depositing an amorphous vanadium oxide film on the silicon substrate; and placing the prepared amorphous vanadium oxide film into a vacuum annealing furnace so as to carry out thermal treatment, and after thermal treatment, obtaining the amorphous vanadium oxide film material containing the V6O13 crystals. According to the preparing method provided by the invention, the prepared film material has neat and compact surfaces and relatively uniform material particles. Meanwhile, the resistance of the produced film material is moderate and sensitive with temperature variation, the temperature coefficient of the resistance is larger than 2%/K, and the variation of the resistance is stable in heating and cooling processes. The amorphous vanadium oxide film material can be used for manufacturing a micro-bolometer.

The invention discloses a vanadium oxide thin film and a preparation method thereof. According to the preparation process, the oxygen flow rate during annealing is improved, so that the surface of the prepared vanadium oxide thin film is loose and porous, and the phase change amplitude of the vanadium oxide thin film is improved. According to the method, the defects that the vanadium oxide thin film is long in preparation time and low in phase change amplitude are overcome, the process parameters can be strictly controlled, and the process repeatability and the phase change amplitude of the vanadium oxide thin film are improved, so that the sensitivity of the device is improved. Meanwhile, according to the loose and porous morphology, the specific surface area of the film is enlarged, and the film plays an important role in improving the gas-sensitive property of the sensor and can be well applied to actual operation.

The invention provides a low-voltage-driven normally-open terahertz super-surface modulator and a preparing method. The low-voltage-driven normally-open terahertz super-surface modulator comprises a high-resistance silicon substrate, a buried grid electrode, a vanadium dioxide film and a super-surface layer microstructure, wherein the vanadium dioxide film and the super-surface layer microstructure are sequentially arranged on the upper side of the surface of the high-resistance silicon substrate; the vanadium dioxide film comprises square vanadium dioxide film blocks and isolation vanadium dioxide films; the super-surface layer microstructure is formed after multiple metal structure units are periodically arranged, each metal structure unit is a square metal block, a H-shaped groove is formed in the middle of each square metal block, each square vanadium dioxide film block is arranged below the transverse section of the middle of each H-shaped groove, and the bottom of each square metal block is connected through a metal strip, and is finally connected with a drain electrode. The low-voltage-driven normally-open terahertz super-surface modulator can be widely applied to the fieldof a terahertz wave communication system, terahertz wave detection, terahertz wave imaging and the like.