Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof

A vanadium oxide chemical and mechanical polishing technology, applied in the field of nano-polishing liquid, can solve the problems such as no relevant reports on the chemical mechanical polishing process of vanadium oxide thin film materials, and achieve a stable and controllable polishing rate, no environmental pollution, and long storage time. Effect

Active Publication Date: 2011-07-20
TIANJIN UNIVERSITY OF TECHNOLOGY
View PDF3 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] After reviewing domestic and foreign patents and literature, there is no relevant report on the chemical mechanical polishing process of vanadium oxide thin film materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof
  • Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof
  • Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Preparation of nano-polishing liquid: the polishing liquid contains 20wt% of silica colloid of 10-30nm; 0.2wt% of dodecyl glycol ether; 50ppm of polydimethylsilane; 10ppm of isomeric thiazolinone; isopropanol 0.03wt%; KOH and tetramethylammonium hydroxide (1:1) are pH regulators, the pH is 10.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0027] Realization of polishing process: 6EC nSpire polishing machine from Strasbaugh in the United States is used. The polishing pad is Rohm&Haas IC1000.

[0028] The polished samples were prepared as follows: 1) On the substrate Si / SiO 2 Deposit a bottom electrode W layer with a thickness of 100nm; 2) deposit a dielectric layer SiO with a thickness of 200nm on the bottom electrode W layer 2 ; 3) by photolithography process on SiO 2 Layer etching to form 1000nm array holes; 4) SiO with array holes 2 Vanadium oxid...

Embodiment 2

[0031]The preparation of nano-polishing liquid: the polishing liquid contains 5wt% of silica colloid of 10-30nm, 4wt% of titanium dioxide of 40nm; 0.1wt% of polyethylene glycol ether, 0.1wt% of dodecyl glycol ether; 50ppm of base silane; 10ppm of isomeric thiazolinone; 0.03wt% of isopropanol; KOH and hydroxylamine (1:3) are pH regulators, the pH is 9.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0032] The polishing process and polishing sample preparation are the same as in Example 1.

[0033] Polishing effect: VO x Polishing rate 182nm / min, SiO 2 The polishing rate is 19nm / min, the surface roughness RMS (5μm×5μm) is 0.83nm, VO x / SiO 2 The selection ratio was 9.58.

Embodiment 3

[0035] Preparation of nano-polishing liquid: the polishing liquid contains 10-30nm silica colloid 5wt%, 80nm cerium oxide 2wt%; polyglycol ether 0.3wt%; polydimethylsilane 50ppm; isomeric thiazolinone 10ppm ; Isopropanol 0.03wt%; KOH, tetramethylammonium hydroxide (1: 3) is the pH regulator, the pH is 9.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0036] The polishing process and polishing sample preparation are the same as in Example 1.

[0037] Polishing effect: VO x Polishing rate 154nm / min, SiO 2 The polishing rate is 20nrn / min, the surface roughness RMS (5μm×5μm) is 0.75nm, VO x / SiO 2 The selection ratio was 7.70.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention relates to nano polishing solution for chemically mechanical polishing of vanadium oxide, which consists of a nano-abrasive, a pH regulator, a surfactant, a defoaming agent, a bactericide, a cleaning aid and a solvent, wherein the nano-abrasive is zirconium oxide, titanium oxide, plutonium oxide or silica; the pH regulator comprises inorganic base of KOH and organic base of tetramethylammonium, tetraethyl ammonium hydroxide or hydroxy amine; the surfactant is silicane polyethylene glycol ether, polyethylene glycol ether or 2-(2-dodecyloxyethoxy)ethanol; the defoaming agent is poly(dimethylsilane); the bactericide is isomerous thiazolidinone; the cleaning aid is isopropanol; and the solvent is deionized water. The invention has the advantages that: the polishing rate is stably controllable, the damage is low, the cleaning is simple, equipment is not corroded, the environment is not polluted, and the storage time is long; and a vanadium oxide film material is subjected to the chemically mechanical polishing by the nano polishing solution for preparing a resistive random access memory, and the method is simple and practicable, and is completely compatible with an integrated circuit process.

Description

(1) Technical field [0001] The invention relates to the technical field of microelectronic auxiliary materials and processing technology, in particular to a nano-polishing liquid used for chemical mechanical polishing of vanadium oxide and its application. (2) Background technology [0002] Resistive Random Access Memory (RRAM) is a new type of non-volatile memory, which has low operating voltage, fast read and write speed, strong durability for repeated operations, high storage density, long data retention time, and CMOS technology Compatibility and other features, known as the most powerful competitor of the next generation of non-volatile memory (Nature Materials, 2007, 6: 833 ~ 840). The key material of resistive memory is recordable binary transition metal oxide thin film material, among which vanadium oxide material with resistive characteristics is widely used in photoelectric switch, thermistor, smart window and optical storage and other fields. The field of variabl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L45/00B82Y40/00B01F17/42B01D19/04A01N43/80A01P3/00C09K23/42
Inventor 张楷亮尹立国王芳韦晓莹苗银萍
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap