Nano polishing solution for chemically mechanical polishing of vanadium oxide and application thereof
A vanadium oxide chemical and mechanical polishing technology, applied in the field of nano-polishing liquid, can solve the problems such as no relevant reports on the chemical mechanical polishing process of vanadium oxide thin film materials, and achieve a stable and controllable polishing rate, no environmental pollution, and long storage time. Effect
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Embodiment 1
[0026] Preparation of nano-polishing liquid: the polishing liquid contains 20wt% of silica colloid of 10-30nm; 0.2wt% of dodecyl glycol ether; 50ppm of polydimethylsilane; 10ppm of isomeric thiazolinone; isopropanol 0.03wt%; KOH and tetramethylammonium hydroxide (1:1) are pH regulators, the pH is 10.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.
[0027] Realization of polishing process: 6EC nSpire polishing machine from Strasbaugh in the United States is used. The polishing pad is Rohm&Haas IC1000.
[0028] The polished samples were prepared as follows: 1) On the substrate Si / SiO 2 Deposit a bottom electrode W layer with a thickness of 100nm; 2) deposit a dielectric layer SiO with a thickness of 200nm on the bottom electrode W layer 2 ; 3) by photolithography process on SiO 2 Layer etching to form 1000nm array holes; 4) SiO with array holes 2 Vanadium oxid...
Embodiment 2
[0031]The preparation of nano-polishing liquid: the polishing liquid contains 5wt% of silica colloid of 10-30nm, 4wt% of titanium dioxide of 40nm; 0.1wt% of polyethylene glycol ether, 0.1wt% of dodecyl glycol ether; 50ppm of base silane; 10ppm of isomeric thiazolinone; 0.03wt% of isopropanol; KOH and hydroxylamine (1:3) are pH regulators, the pH is 9.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.
[0032] The polishing process and polishing sample preparation are the same as in Example 1.
[0033] Polishing effect: VO x Polishing rate 182nm / min, SiO 2 The polishing rate is 19nm / min, the surface roughness RMS (5μm×5μm) is 0.83nm, VO x / SiO 2 The selection ratio was 9.58.
Embodiment 3
[0035] Preparation of nano-polishing liquid: the polishing liquid contains 10-30nm silica colloid 5wt%, 80nm cerium oxide 2wt%; polyglycol ether 0.3wt%; polydimethylsilane 50ppm; isomeric thiazolinone 10ppm ; Isopropanol 0.03wt%; KOH, tetramethylammonium hydroxide (1: 3) is the pH regulator, the pH is 9.8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.
[0036] The polishing process and polishing sample preparation are the same as in Example 1.
[0037] Polishing effect: VO x Polishing rate 154nm / min, SiO 2 The polishing rate is 20nrn / min, the surface roughness RMS (5μm×5μm) is 0.75nm, VO x / SiO 2 The selection ratio was 7.70.
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