Industrialized thick GEM (Gaseous Electron Multiplier) manufacturing method

Abstract

The invention discloses an industrialized thick GEM (Gaseous Electron Multiplier) manufacturing method, which comprises the following steps: (1) preparing positioning and connecting holes in a thick GEM original plate; (2) covering the thick GEM original plate treated by the step (1) with a corrosion resistant layer; (3) transferring the design image to the thick GEM original plate treated by the step (2); (4) preparing thick GEM holes in the thick GEM original plate treated by the step (3); (5) preparing insulating rings for all thick GEM holes; and (6) removing the corrosion resistant layer on the thick GEM original plate. The performance can be further improved by plating a gold layer on the thick GEM original plate treated by the step (6). According to the industrialized thick GEM manufacturing method, low-cost, short-period, large-area and high-yield industrialized whole assembly line batch production of the domestic thick GEM original plate is realized; the produced thick GEM has high gain and good gain stability and energy resolution, is ignition-resistant and can work in various argon-based and neon-based mixed gases.

Description

technical field [0001] The invention relates to an industrial thick GEM manufacturing method. The invention is based on common domestic PCB processing and chemical corrosion technology and equipment, and realizes the mass production of THick gaseous electron multiplier (THick gaseous electron multiplier, THGEM, thick GEM). At present, such thick GEM detectors are widely used in high-energy physics experiments, ultraviolet, X-ray, charged particle and neutron detection and imaging and other fields. Background technique [0002] GEM and Thick GEM [0003] Thick GEM, Thick gaseous electron multiplier (Thick gaseous electron multiplier, THGEM) is a new microstructure gas detector developed on the basis of traditional GEM. The basic structure of the GEM detector is: an array of tiny holes is made on an insulating plate covered with a thin conductive metal layer on the upper and lower surfaces. Due to the existence of the microporous structure, when a certain voltage difference ...

AI Technical Summary

Problems solved by technology

This process needs to be combined with a laser lithography system with high positioning accuracy, the cost is high, and its rim can also reach 100μm

The fourth ( figure 1 d) It does not cover any protective film, and the entire plate is directly etched after mechanical drilling, so that the thickness of the copper layer will decrease with the increase of the rim size, and the control is relatively difficult

[0013] First of all, the production cost is high, and the delivery time cycle of thick GEM is uncertain, generally long, which cannot meet the requirements of mass production

[0014] Secondly, the post-processing method of...

Images