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Vanadium dioxide intelligent temperature control film and preparation method thereof

A vanadium dioxide intelligent and vanadium dioxide technology is applied in the field of vanadium dioxide intelligent temperature control film and preparation, and can solve the problems of high cost of precursor organic vanadium source, complicated process, complicated preparation process of organic salt sol method, etc.

Inactive Publication Date: 2011-11-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the physical sputtering method and deposition method are relatively expensive, and the process is complex, and there are specific requirements for the substrate
The sol-gel method includes a water quenching sol method and an organic salt sol method, wherein the water quenching sol method has a greater risk in the operation process, while the organic salt sol method has a complicated preparation process, and the cost of the precursor organic vanadium source is high, and In the process of film coating, it needs to be carried out under dry and anhydrous conditions and is limited

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  • Vanadium dioxide intelligent temperature control film and preparation method thereof
  • Vanadium dioxide intelligent temperature control film and preparation method thereof
  • Vanadium dioxide intelligent temperature control film and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0030] with V 2 o 5 The powder, benzyl alcohol and isopropanol were mixed in a molar ratio of 1:4:50, and stirred in an oil bath at 80°C for 2 hours to obtain VO x (2.0x film, then at 410°C, H 2 / Ar mixed atmosphere for reduction for 3 hours, the desired VO can be obtained after natural cooling 2film.

[0031] figure 1 a corresponds to VO 2 The SEM image of the surface morphology of the film, the grain diameter is about 80-120nm; figure 1 b corresponds to the AFM image, the average roughness of the film is 8.02nm; figure 1 c is a TEM image, crystal grains of about 100nm can be observed, and the inset is electron diffraction of a selected area, showing VO 2 Thin monoclinic phase structure. figure 2 (a) is pure phase VO 2 The light transmittance diagram of the thin film sample before and after the metal-insulator phase transition, during the heating process, VO 2 The light transmittance of the film in the visible region remains unchanged, and the transmittance is 70%....

Embodiment 2

[0034] with V 2 o 5 The powder, benzyl alcohol and isobutanol were mixed in a molar ratio of 1:4:50, and stirred in an oil bath at 80°C for 2 hours to obtain VO x Organic dispersion solution. W by sol-gel method 6+ Ions and PVP are doped, the V:W molar ratio is 3:1, and the PVP mass fraction is 1.5%. Prepare VO by pulling coating technology (speed is 50mm / min) x film, then at 410°C, H 2 / Ar mixed atmosphere for 3 hours, and after natural cooling, W-doped porous VO can be obtained 2 film. VO 2 The light transmittance of the film sample before and after the metal-insulator phase transition changes by 61%; the resistivity changes by 10 3 order of magnitude; its phase transition temperature is 35°C.

Embodiment 3

[0036] with V 2 o 5 The powder, benzyl alcohol and ethanol were mixed in a molar ratio of 1:4:60, and stirred in an oil bath at 80°C for 2 hours to obtain VO x Organic dispersion solution. W by sol-gel method 6+ Ions and PVP are doped, the V:W molar ratio is 4:1, and the PVP mass fraction is 1.5%. Prepare VO by pulling coating technology (speed is 50mm / min) x film, then at 410°C, H 2 / Ar mixed atmosphere for 3 hours, and after natural cooling, W-doped porous VO can be obtained 2 film. VO 2 The light transmittance of the film sample before and after the metal-insulator phase transition changes by 62%; the resistivity changes by 10 3 order of magnitude; its phase transition temperature is 41°C.

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Abstract

The invention relates to a vanadium dioxide intelligent temperature control film and a preparation method thereof. The preparation method comprises the following steps of: uniformly dispersing and dissolving vanadic oxide powder in an organic solvent with weak reductibility by adopting a wet chemical solution method; adding PVP (Polyvinyl Pyrrolidone) or PEG (polyethylene glycol) and a metal salt to prepare a doped VOx film (x is more than 2.0 and less than 2.5); and performing thermal treatment to form a doped porous hypovanadic oxide (VO2) film. In a better embodiment, the preparation method comprises the following steps of: adding polyvinyl pyrrolidone and a wolfram salt into a system consisting of vanadic oxide powder, benzyl alcohol and isopropyl alcohol to prepare a wolfram-doped VOx film; and annealing in hydrogen / argon atmosphere at the temperature 410 DEG C for 3 hours to prepare a wolfram-doped porous VO2 film, wherein the metal-insulator phase-transition temperature of the wolfram-doped porous VO2 film can be adjusted between 30 DEG C and 68 DEG C according to doping amount of wolfram, the penetration rate of a visible light region is 70 percent, the difference between the penetration rate before phase transition and the penetration rate after phase transition at the position of which the wavelength is 2,500 nanometers is 62 percent, 3-4 orders of magnitude of specific resistance is changed, and higher practical value is achieved.

Description

technical field [0001] The present invention relates to a vanadium dioxide intelligent temperature control film and its preparation method. More precisely, the present invention relates to a vanadium dioxide intelligent temperature control film with high light transmittance and low phase transition temperature and its preparation method, belonging to metal-insulator phase transition field of materials chemistry. Background technique [0002] Vanadium dioxide (VO 2 ) is a functional material with phase change characteristics. At a certain temperature, a reversible phase transition from a low-temperature semiconductor phase to a high-temperature metal phase occurs, accompanied by the evolution from infrared transmission to infrared reflection, and an obvious sudden change in resistance occurs at the same time. It is particularly important to make full use of solar energy; it can be widely used in solar temperature control devices, photoelectric switch materials, thermistor (t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23C04B41/50
Inventor 黄富强李德增丁尚军赵伟
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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