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33 results about "Vanadium(IV) oxide" patented technology

Vanadium(IV) oxide or vanadium dioxide is an inorganic compound with the formula VO₂. It is a dark blue solid. Vanadium(IV) dioxide is amphoteric, dissolving in non-oxidising acids to give the blue vanadyl ion, [VO]²⁺ and in alkali to give the brown [V₄O₉]²⁻ ion, or at high pH [VO₄]⁴⁻. VO₂ has a phase transition very close to room temperature (~66 °C). Electrical resistivity, opacity, etc, can change up several orders. Owing to these properties, it has been used in surface coating, sensors, and imaging. Potential applications include use in memory devices, phase-change switches, aerospace communication systems and neuromorphic computing.

Preparation method for vanadium oxide composite electrode material used for zinc ion battery

The invention provides a preparation method for a vanadium oxide composite electrode material used for a zinc ion battery. The preparation method for the vanadium oxide composite material comprises the following steps: dissolving ammonium metavanadate with water, then adding a carbon material, carrying out mixing under stirring and then carrying out drying; and subjecting a solid obtained after drying to high-temperature calcination under the protection of inert gas so as to obtain the vanadium oxide composite material. According to the invention, a variety of carbon materials can be used, and different vanadium oxide/carbon composites can be obtained by regulating calcining temperatures and time; and the vanadium oxide may have different structures and crystal forms, or may be a mixture of two or more vanadium oxides with different structures and crystal forms. When used as a positive electrode material for an aqueous zinc ion battery, the vanadium oxide composite material provided by the invention has the advantages of high specific capacity and energy density, excellent cycle stability, etc.; and a zinc ion battery based on the vanadium oxide/carbon composite positive electrode material has good application prospects in fields like green energy, portable electronic devices and communication technology.
Owner:NANKAI UNIV

Vanadium dioxide intelligent temperature control film and preparation method thereof

The invention relates to a vanadium dioxide intelligent temperature control film and a preparation method thereof. The preparation method comprises the following steps of: uniformly dispersing and dissolving vanadic oxide powder in an organic solvent with weak reductibility by adopting a wet chemical solution method; adding PVP (Polyvinyl Pyrrolidone) or PEG (polyethylene glycol) and a metal salt to prepare a doped VOx film (x is more than 2.0 and less than 2.5); and performing thermal treatment to form a doped porous hypovanadic oxide (VO2) film. In a better embodiment, the preparation method comprises the following steps of: adding polyvinyl pyrrolidone and a wolfram salt into a system consisting of vanadic oxide powder, benzyl alcohol and isopropyl alcohol to prepare a wolfram-doped VOx film; and annealing in hydrogen / argon atmosphere at the temperature 410 DEG C for 3 hours to prepare a wolfram-doped porous VO2 film, wherein the metal-insulator phase-transition temperature of the wolfram-doped porous VO2 film can be adjusted between 30 DEG C and 68 DEG C according to doping amount of wolfram, the penetration rate of a visible light region is 70 percent, the difference between the penetration rate before phase transition and the penetration rate after phase transition at the position of which the wavelength is 2,500 nanometers is 62 percent, 3-4 orders of magnitude of specific resistance is changed, and higher practical value is achieved.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Preparation method of vanadium oxides with different valence states, crystal forms and appearances

The invention discloses a preparation method of vanadium oxides with different valence states, crystal forms and appearances. The preparation method comprises the following steps: firstly mixing vanadium pentoxide, hydrogen peroxide and deionized water to obtain a mixed solution, and further adding polyethylene glycol into the mixed solution to obtain a precursor solution; then putting the precursor solution into a closed container, and reacting at the temperature of 180-220 DEG C for at least 30min to obtain a reaction solution, wherein the closed container is a polytetrafluoroethylene container and a heating source is microwaves; further sequentially performing solid-liquid separation, washing and drying treatment on the reaction solution to prepare alpha-V2O5 nanowires with valence state of 5, crystal form of orthorhombic alpha phase, space group of Pmmn and appearance of 40nm diameter and 100mu m length or VO2(D) nanoparticles with valence state of 4, crystal form of monoclinic D phase, space group of P2 / c and appearance of 30-40nm particle size or nanorods with valence state of 4, crystal form of monoclinic B phase, space group of C2 / m and appearance of 60nm diameter and 500nm length. The preparation method can be widely used for preparing vanadium oxides with different valence states, crystal forms and appearances.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Flexible thin film electrode material and preparation method thereof

The invention relates to a flexible thin film electrode material and a preparation method thereof. The electrode material adopts an ultrathin titanium sheet as a substrate, a layer of intensively arranged vanadium trioxide nanosheet array is distributed on the substrate; the surface of the vanadium trioxide nanosheet array is also coated with a layer of carbon material. The preparation method comprises the following steps: firstly, hydrothermally generating the vanadium trioxide nanosheet array on the ultrathin titanium sheet, and then conducting carbon coating by taking glucose as a carbon source to form the vanadium trioxide @ carbon compound nanosheet array, namely the flexible thin film electrode material. The electrode material can be used as a positive electrode and a negative electrode at the same time to assemble a supercapacitor. The method is simple to operate and facilitates realization of mass production, the obtained capacitor has excellent flexibility, the whole capacitor is only 40 micrometers in thickness, dissymmetrical energy storage principle, high voltage and high volume energy density are shown, and the flexible thin film electrode material can be used for the fields of flexible wearable electronic products and the like, and is hopeful to generate excellent social and economic benefits.
Owner:WUHAN UNIV OF TECH

Graphene-containing vanadium dioxide composite powder and preparation method and application thereof

The invention relates to a graphene-containing vanadium dioxide composite powder and a preparation method and application thereof. The graphene-containing vanadium dioxide composite powder consists ofcore-shell particles and graphene dispersed between the core-shell particles, each core-shell particle consists of a vanadium dioxide particle and metal, the metal wraps the surface of the vanadium dioxide to form a metal shell, and the mass ratio of the vanadium dioxide particles, the metal and the graphene is (70 to 98) to (1 to 20) to (1 to 10). Through the synergistic effect of the metal shells and the graphene of the graphene-containing vanadium dioxide composite powder, the high conductivity of the graphene-containing vanadium dioxide composite powder can be achieved, and the electron transfer capability and infrared transmission and reflection capability of the graphene-containing vanadium dioxide composite powder are increased. When temperature increases, plasma resonance is generated inside the vanadium dioxide particles, a conductive network formed by the vanadium dioxide particles, the metal shells and the graphene carries out the total reflection of infrared light, at themoment, the transmission and absorption of infrared rays can be greatly reduced, consequently, temperature rise is decreased, and the objective of energy saving is achieved.
Owner:广东华材实业股份有限公司

Process for producing vanadium-dioxide-containing particles

The present invention addresses the problem of providing a process for producing vanadium-dioxide-containing particles which have a small average particle diameter and a narrow particle diameter distribution, are excellent in terms of monodispersity and dispersion stability, and have excellent thermochromic properties. The process for producing vanadium-dioxide-containing particles of the presentinvention comprises using a flow-through type reactor including a hydrothermal reaction part and using a liquid reaction mixture obtained by mixing a raw-material slurry, the slurry comprising a vanadium-containing compound and water, and a compound that reacts with the vanadium-containing compound, with water in a supercritical or subcritical state. The production process is characterized in that1) the water is degassed water, 2) the time over which the liquid reaction mixture passes through the hydrothermal reaction part is 3-1,000 seconds, 3) the raw-material slurry is subjected, before the hydrothermal synthesis, to a desalting treatment for salt removal therefrom and hence the particles have an average particle diameter of 15-40 nm and an average crystallite diameter of 15-40 nm, or4) prior to the step of producing vanadium-dioxide-containing particles, the raw-material slurry is subjected to a dispersing treatment.
Owner:KONICA MINOLTA INC

Preparation method of rutile phase vanadium dioxide nanowire and application

The invention belongs to the field of inorganic functional material, relating to a preparation method of rutile phase vanadium dioxide nanowire. In the preparation method, vanadium ion aqueous solution or suspension of which the molar concentration is 0.005-0.2 mol / L is prepared firstly; then, doping agent is added to carry out ultrasonic dispersion; the obtained liquid is added into a hydrothermal kettle and is synthetized by a hydrothermal reaction; the hydrothermal kettle is taken out and is naturally cooled to room temperature after being quickly chilled; the obtained product is decentralized, washed and dried to obtain the rutile phase vanadium dioxide nanowire. The rutile phase vanadium dioxide nanowire with favourable crystallinity can be obtained by changing vanadium ion compound and density thereof and controlling conditions, such as reaction temperature and time, packing ratio, doping agent addition, cooling speed and the like. The length-diameter ratio of the prepared rutile phase vanadium dioxide nanowire can be controllably adjusted between dozens and thousands. The obtained nanowire can be applied in the fields of intelligent window coatings, temperature control devices, optoelectronic switches, thermistors, optical information storage and the like.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Preparation method of wafer-level vanadium dioxide film

The invention provides a preparation method of a wafer-level vanadium dioxide film. The preparation method comprises the following steps of S1, providing a metal vanadium film with uniform growth; andS2, under the condition that the temperature is 450-650 DEG C and oxygen-free, oxidizing the metal vanadium film by using water vapor to obtain a monoclinic phase vanadium dioxide film. The preparation method can be used for preparing the vanadium dioxide thin film with the excellent performance of the wafer level size, is uniform and compact, and can achieve the resistance change of three to four orders of magnitudes in the phase change process. According to the preparation method, the water vapor is used as a mild oxidizing agent, a self-adjusting oxidation mechanism can be realized in thegrowth process when the vanadium dioxide film is prepared, so that a stable positive tetravalent monoclinic phase vanadium dioxide film can be prepared. According to the preparation method, the growthtemperature zone prepared by the vanadium dioxide film is greatly expanded, and the vanadium dioxide film can be efficiently prepared within the range of 450-650 DEG C; and the method is simple and easy to implement and high in repeatability, and the whole film growth process is non-toxic, environment-friendly and low in cost.
Owner:UNIV OF SCI & TECH OF CHINA

Method for preparing hypovanadic oxide doped powder material

The invention discloses a method for preparing hypovanadic oxide powder-doped material, which belongs to the production and preparation field of inorganic functional materials and relates to the preparation of hypovanaic oxide powder doped with W, Mo or W / Mo. The method comprises the following steps: mixing and evenly grinding a vanadium source, a doped raw material and an auxiliary agent, pouring the mixture after being molten at a high temperature and keeping the temperature for a certain period of time into cold water to be rapidly water-quenched, drying the formed gel to form dry gel, thermal-reducing the grinded dry gel in the reduction atmosphere, performing annealing treatment in a protective atmosphere, and realizing the crystalling phase conversion at a constant temperature so as to obtain M-phase VO2 with phase transition property. The phase transition temperature of the VO2 powder after doping can be effectively controlled by adjusting the W and Mo atom doping amount. The invention has remarkable advantage in the aspects of preparation cost, product performance, technique flow, friendly environment, economic profit, and the like, has easily available raw materials, simple and convenient synthesis, low requirement on the equipment and high product performance, is suitable for industrial production and has wide application of product.
Owner:DALIAN UNIV OF TECH

Vanadium dioxide precursor liquid and method for preparing thin-film material by using the same

The invention belongs to the technical field of material chemistry, in particular relates to a vanadium dioxide precursor liquid and a method for preparing a thin-film material by using the same. The vanadium dioxide precursor liquid of the invention comprises a soluble vanadium salt, a film forming accelerator and a solvent. The invention further provides a method for preparing a vanadium dioxide thin film by using the vanadium dioxide precursor liquid. The invention overcomes the shortages of the prior preparation technique of liquid-phase vanadium dioxide, reduces the cost of raw materials, and can previously reduce or oxidize the vanadium raw material in the raw materials to quadrivalence so that vanadium element is not necessarily subjected to an oxidation-reduction reaction in the process of thermal treatment. The vanadium dioxide thin film prepared by the invention has uniform phase, good purity and intelligent response to temperature. The vanadium dioxide thin film prepared ona glass substrate has a light transmittance peak value up to 70% at most in a visual light region and an infrared light regulating performance up to 60% at most, and has wide application prospect in the fields of optical functional materials and electric functional materials.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Tungsten-doped vanadium dioxide powder material and preparation method thereof

The invention relates to a tungsten-doped vanadium dioxide powder material which comprises the following components by mass percent: 2.97-3.19 percent of reducing agent, 0-6.89 percent of industrial pure tungsten trioxide and balance industrial pure vanadium pentoxide; and the sum of the mass percent of the components is 100 percent. A preparation method of the tungsten-doped vanadium dioxide powder material comprises the steps of: first, weighing raw materials according to the mass percent, and mixing the raw materials for 4-6h; then, carrying out high temperature reduction on the evenly mixed powder under the protection of inert gas; and finally, dispersing and obtaining the tungsten-doped vanadium dioxide powder material. By adopting the tungsten-doped vanadium dioxide powder material and the preparation method thereof, vanadium dioxide is high in purity and single in crystal form, and the phase-transition temperature Tc can be controlled within the range of minus 2.9 to 67.04 DEG C according to the number of doped metal ions W6<+>, so that the optical, electrical, magnetic and other properties of the tungsten-doped vanadium dioxide powder material have mutation within the range of minus 2.9 to 67.04 DEG C, and the demand of special type functional material can be met.
Owner:XIAN UNIV OF TECH

A method for preparing vanadium dioxide by dual temperature zone reduction method

The invention relates to a method of preparing vanadium dioxide by a double-temperature area reduction process. The method comprises the following steps: placing vanadium pentoxide and high-activity metal into a sealed system with negative pressure by spacing a certain distance; respectively heating vanadium pentoxide and the high-activity metal to different temperatures for thermally treating for determined time, so that oxygen partial pressure in the sealed system is lower than balanced oxygen partial pressure of vanadium pentoxide and vanadium pentoxide is reduced to obtain vanadium dioxide, wherein the high-activity metal is heated to a first temperature and vanadium pentoxide is heated to a second temperature lower than the first temperature; the heated high-activity metal reacts with oxygen gas in the sealed system to lower the oxygen partial pressure in the sealed system, so that the oxygen partial pressure of the sealed system is lower than the balanced oxygen partial pressure of vanadium pentoxide. The vanadium dioxide obtained by the method disclosed by the invention is controllable in crystalline phase and grain size, and has a morphology which is kept consistent or similar to that of a vanadium pentoxide precursor.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Preparation method of vanadium oxide/carbon nanometer tube composite materials with interpenetrating network structures

The invention provides a preparation method of vanadium oxide / carbon nanometer tube composite materials with interpenetrating network structures. The carbon nanometer tubes with good conductivity are adopted for self assembly with single-dimensional vanadium oxide nanometer materials on the nanometer scale, so the carbon nanometer tubes have the effects of conductive bridges between all interwoven single-dimensional vanadium oxide nanometer materials for building interpenetrating network structures under the microcosmic dimensions, and the composite material with the structure can be used as a lithium ion injection material with high capacity and high stability. The method comprises the following preparation processes: using V2O5 collosol prepared by a quenching method as a vanadium source; using the carbon nanometer tubes dressed by sulphuric acid and nitric acid as assembly initiation sources; mixing and stirring the V2O5 collosol and the carbon nanometer tubes for more than 1 hour; then taking the reaction for 1 to 7 days through the water heating technology at 150 to 190 DEG C; washing and filtering obtained materials by deionized water for 2 to 5 times; and baking materials at 60 to 100 DEG C for obtaining the vanadium oxide / carbon nanometer tube composite materials with the interpenetrating network structures. The composite material has wide application when being used as the lithium ion injection material in the fields such as secondary lithium ion batteries, electrochromic devices, photoelectric switches, catalysis and sensors and the like.
Owner:WUHAN UNIV OF TECH
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