The invention relates to a K hole doped polycrystalline SnSe and a preparation method therefor, and belongs to the technical field of energy materials. The method comprises the steps: firstly taking high-purity Sn, K and Sn elementary substances as raw materials, and enabling the raw materials to be prepared into compound powder through an improved mechanical alloying method; secondly employing a spark plasma sintering method, and adjusting the mechanical alloying method and the technological parameters of the spark plasma sintering, thereby achieving the effective doping of K elements, and obtaining K hole doped polycrystalline SnSe through preparation, wherein the atomic ratio of Sn: K: Se is equal to (1-x): x: 1, and x is greater than zero but not greater than 0.1. The K hole doped polycrystalline SnSe is low in heat conductivity, and is high in carrier concentration, power factor and ZT value, wherein the heat conductivity can decrease to 0.20W/mK at the temperature of 773K, and the maximum power factor and the maximum thermoelectricity optimum value ZT respectively reach 350 [mu]W/mK2 and 1.08. The method optimizes the thermoelectric performances, is simple and convenient in technology, is low in cost, and is high in practicality.