Solvothermal synthesis method for dual-soluble rare earth-doped indium oxide quantum dots

A solvothermal, quantum dot technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problems of limited doping amount of quantum dots, low luminous efficiency of quantum dots, etc. Achieve high fluorescence intensity, increase effective doping concentration, and good solubility

Inactive Publication Date: 2013-08-07
GUIZHOU NORMAL UNIVERSITY
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, this method has a limited doping amount for quantum dots, and the dopant ions are easily adsorbed on the surface of quantum dots, and even some quantum dots do not contain dopant ions, so the prepared quantum dots have low luminous efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solvothermal synthesis method for dual-soluble rare earth-doped indium oxide quantum dots
  • Solvothermal synthesis method for dual-soluble rare earth-doped indium oxide quantum dots
  • Solvothermal synthesis method for dual-soluble rare earth-doped indium oxide quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Use europium acetate as the source of europium ions, and use ethanol and indium acetate to prepare Eu:In 2 o 3 quantum dots.

[0032] Step (a): 0.0012 g of europium acetate and 15 mL of ethanol were added into a 20 mL glass bottle, and ultrasonically dissolved to prepare a solution of europium ion precursor.

[0033] Step (b): Accurately weigh 0.0029 g of indium acetate and pour it into the reactor, inject 3.5 mL of europium ion precursor solution into the reactor, add 10.5 mL of ethanol and stir for 10 minutes.

[0034] Step (c): React the reaction at 190°C for 2 hours, flush with water to cool, and prepare Eu:In2O3 quantum dots. The prepared Eu:In2O3 quantum dots showed bright red fluorescence under 254 nm ultraviolet light.

Embodiment 2

[0036] Example 2 is the same as Example 1, except that the 10.5 mL of ethanol in Example 1 is replaced with 3.5 mL of ethanol and 7 mL of methanol.

Embodiment 3

[0038] Embodiment 3 is the same as embodiment 1, but the ethanol in embodiment 1 is changed into methyl alcohol.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing rare earth ion-doped indium oxide (In2O3) quantum dots in an alcohol solvent system by a solvothermal method. According to the method, the rare earth ion-doped IN2O3 quantum dots are prepared by adding inorganic substances, such as indium acetate, acetic acid with rare earth ions or nitrate compounds, serving as raw materials into an alcohol solvent to react at a certain temperature through a hydrothermal kettle. The preparation method is simple, economic, environment-friendly, high in repeatability, and favorable to realize industrial scale production; and cumbersome and dangerous processes such as high-temperature calcining and combusting are avoided. The rare earth ion-doped IN2O3 quantum dots prepared by the method has very high water solubility and oil solubility, high light emitting performance, high optical stability, high biocompatibility, biological stability, and good application prospect in the aspects of biomarkers and functional materials such as display, illumination, optical communication and laser devices.

Description

technical field [0001] The invention is suitable for preparing rare earth ion-doped semiconductor nanomaterials (quantum dots) used in optoelectronic devices such as light-emitting diodes and solar cells, and is especially suitable for preparing Eu 3+ The invention relates to doping indium oxide quantum dots with rare earth ions, belonging to the technical field of material preparation. Background technique [0002] When the size of the material is reduced to the nanometer level, due to its nano-effect, the material will produce many novel and unique functional properties superior to traditional materials, and has potential in the fields of microelectronics, bioengineering, fine ceramics, chemical industry, and medicine. wide application. Quantum dots, also known as semiconductor nanocrystals. The ultra-fine size of quantum dots leads to a quantum scale effect, which endows them with unique optical and electronic properties, so people pay more and more attention to them, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62B82Y20/00B82Y30/00B82Y40/00
Inventor 曾若生沈荣安
Owner GUIZHOU NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products