Graphene doping method and doped graphene

A graphene and graphene layer technology, applied in the field of doped graphene and graphene doping, can solve the problems of unsuitable application and popularization, complicated production process, relatively large energy consumption, etc., and achieve low power consumption and diverse shapes , size and position controllable effect

Inactive Publication Date: 2014-12-17
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
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  • Application Information

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Problems solved by technology

However, this doping method needs to be realized by constructing a top gate, the manufacturing process is relatively complicated, and relatively high energy consumption is not suitable for industrial application and popularization.

Method used

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  • Graphene doping method and doped graphene
  • Graphene doping method and doped graphene
  • Graphene doping method and doped graphene

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preparation example Construction

[0039] As a method for preparing a graphene device, a graphene layer can be formed on a silicon wafer having a silicon dioxide layer on the surface by the micromechanical exfoliation method described later. The silicon wafer with a silicon dioxide layer on the surface can be obtained commercially, for example, a silicon wafer commercially available from SVM Company in the United States can be used, and the thickness of the silicon wafer is 0.5 mm (for the The total thickness of the silicon wafer of the silicon dioxide layer) and has a silicon dioxide layer of 285 nm thick.

[0040] According to the present invention, by forming the polymethyl methacrylate film 4 of the present invention on the graphene layer 3, it can have the effect of storing electrostatic charges.

[0041] Preferably, the thickness of the polymethyl methacrylate film is 20-50 nm, more preferably, the thickness of the polymethyl methacrylate film is 30-45 nm, further preferably 35-45 nm.

[0042] According ...

Embodiment 1

[0069] A graphene layer was fabricated on a 0.5 mm thick silicon wafer (with an oxide layer with a thickness of 285 nm on the surface) by a micromechanical exfoliation method to obtain a graphene device. A solution of polymethyl methacrylate (number-average molecular weight is 950,000, the same below) with a concentration of 4% by weight (solvent is chlorobenzene) is spin-coated on the surface of the graphene device with the graphene layer, and the spin-coating speed is 4000rpm , the spin coating time was 1.5 min, and then it was dried at 150 °C for 10 min to obtain a thin film with a thickness of 38 nm. Regions with graphene layers were found on the graphene device by atomic force microscopy (magnification mode: 1000X), and the graphene regions to be doped were precisely located by the electrostatic force microscopy mode of atomic force microscopy. Then, in the contact mode of the atomic force microscope, a voltage of 7V was applied to the conductive tip, the graphene device ...

Embodiment 2

[0073] A graphene layer was fabricated on a 0.5 mm thick silicon wafer (with an oxide layer with a thickness of 285 nm on the surface) by a micromechanical exfoliation method to obtain a graphene device. The polymethyl methacrylate solution (solvent is anisole) with a concentration of 4 wt% was spin-coated on the surface of the graphene device with the graphene layer, the spin-coating speed was 4000 rpm, the spin-coating time was 2 minutes, and then After drying at 150°C for 10 minutes, a film with a thickness of 36 nm was obtained. Regions with graphene layers were found on the graphene device by atomic force microscopy (magnification mode: 1000X), and the graphene regions to be doped were precisely located by the electrostatic force microscopy mode of atomic force microscopy. Then, in the contact mode of the atomic force microscope, a voltage of 10V was applied to the conductive tip, and a voltage of -3V was applied to the silicon layer of the graphene device, and two consec...

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Abstract

The invention discloses a graphene doping method and doped graphene obtained by using the method. The method comprises the following steps: forming a polymethyl methacrylate film on the surface graphene layer of a graphene device; selecting a graphene region needing to be doped; and introducing charges into the selected graphene region through the conductive needle point of an atomic force microscope for doping. The method according to the invention has the advantages that graphene doping can be realized in situ; the doping region can be of various shapes; the doping concentration is controllable and continuously-adjustable; and an intrinsic sample can be doped effectively, and a doped sample can be de-doped.

Description

technical field [0001] The present invention relates to a graphene doping method and doped graphene, in particular, to a method for realizing controllable doping of graphene by in-situ electrostatic injection, and doped graphene obtained by the method. Background technique [0002] Since graphene was reported by Professor Andre Heim of the University of Manchester, UK in 2004, its unique properties have attracted widespread attention of scientists and are predicted to cause revolutionary changes in many fields. Graphene is a semiconductor with zero energy gap, with 100 times higher carrier mobility than silicon, micron-scale free path and large coherence length at room temperature, so it is an ideal material for nm circuits. However, graphene still faces an important challenge in application, which is how to realize its controllable functionalization. In order to give full play to its excellent properties, graphene must be effectively functionalized. Graphene doping is one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/22H01L29/167
CPCH01L21/2205H01L29/1606H01L29/66045H01L29/78
Inventor 王小伟王锐姜星宾许应瑛程志海裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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