Preparation method of ultra-long stibium-doped zinc oxide micrometer line

A zinc oxide micron, antimony doping technology, applied in microstructure technology, gaseous chemical plating, microstructure devices, etc., to achieve the effects of reliable preparation, reduced preparation temperature, and improved yield

Inactive Publication Date: 2010-05-05
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no preparation method for ultra-long antimony-doped zinc oxide microwires, and it is very important to develop effective and reliable preparation methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of ultra-long stibium-doped zinc oxide micrometer line
  • Preparation method of ultra-long stibium-doped zinc oxide micrometer line
  • Preparation method of ultra-long stibium-doped zinc oxide micrometer line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The quality of the product prepared under the following experimental conditions is better. The experimental equipment is a horizontal tube furnace, specifications: length 75cm, tube diameter 45mm, maximum heating temperature 1000°C; quartz tube length 100cm, tube diameter 32mm.

[0015] Solution: First, ultrasonically clean the silicon substrate in acetone and absolute ethanol for 20 minutes, rinse it with deionized water, and then use magnetron sputtering to deposit 20nm of Au on the silicon substrate as a catalyst. Zn powder, Sb 2 o 3 Mix it with C powder at an atomic ratio of 5:1:4, ball mill it for 1 hour, mix well and put it in a porcelain boat as a raw material, and put the silicon substrate on the porcelain boat facing the powder. Then the ceramic boat is placed in the middle of the quartz tube in the tube furnace, and the flowmeter is adjusted to feed argon (98%) / oxygen (2%) mixed gas (300 sccm) into the tube. Keeping it warm for 10 minutes at a temperature of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of an ultra-long stibium-doped zinc oxide micrometer line, belonging to the technical filed of nano / micrometer material preparation. The basic process is as follows: utilizing cleaning agent to wash out a silicon substrate, then sputtering a layer of Au film of 20nm by magnetic control to be used as a precipitation substrate; completely mixing Zn powder, Sb2O3 powder and C powder in a certain mole ratio evenly, and placing the mixed powder which is used as a reaction source in a ceramic boat, wherein the powder mixing process can utilize a ball milling method; putting a bearing reaction source and the ceramic boat of the substrate into the middle part of a quartz tube in a tube furnace, regulating a flow meter to introduce the mixed gas of argon and oxgen into a quartz tube under the condition that the total flow is 300cm3 / min and argon in the mixed gas accounts for 98% and oxygen accounts for 2%, heating the tube furnace to 930-950 DEG C under the atmosphere, then keeping the temperature for about 10min, after the preparation reaction finishes, taking out the silicon substrate and cooling to room temperature to obtain the product of the ultra-long stibium-doped zinc oxide micrometer line. The invention realizes the preparation of the ultra-long stibium-doped zinc oxide micrometer line, has simpler process, can ensure high quality products and has good controllability.

Description

technical field [0001] The invention belongs to the technical field of preparation of micron materials, and in particular provides a gas-phase method for preparing ultra-long antimony-doped zinc oxide one-dimensional micron materials. The synthesis process is simple and the output is high, and the controllable growth at a relatively low preparation temperature is realized. Background technique [0002] Zinc oxide is a semiconductor with a direct band gap and a wide band gap. The band gap of ZnO at room temperature is about 3.37eV, and the exciton binding energy is high (60meV). It has excellent dual properties of semiconductor and piezoelectricity. Due to the structural characteristics of one-dimensional ZnO micro-materials and its excellent optical, electrical, magnetic, and force properties, it shows great application potential in the fields of nano-optoelectronic devices, nano-sensors, nano-machines, and nano-biological detection. At the same time, the performance of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 张跃杨亚齐俊杰郭雯王增泽孙凯
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap