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393results about How to "Position is easy to control" patented technology

Method for preparation of one-dimensional silicon nanostructure

The invention discloses a method for preparing one-dimensional silicon nanostructure. The order of the processing steps adopted by the invention is as follows: (A) nanometer particle mould is prepared on the surface of backing material; (B) etching of the backing material is completed by use of plasma etching technology. The step (A) includes the following procedures: (i) the surface of backing material is coated with one layer of photoresist through spin coating at first, and then micropores are formed at the surface of backing material through adopting electronic photoetching technique; (ii) one layer of mask film is deposited on the surface of backing material; (iii) photoresist peeling-off of the surface of backing material deposited with the mask film is completed so as to form the nanometer particle mask at the micropores of procedure (i). In addition, step (A) can also be as follows: one layer of metallic film is firstly deposited on the surface of backing material and then heat treatment of the metallic film is completed to obtain metallic nanometer particle mask on the surface of backing material. The silicon nano wire / tip prepared by the invention is characterized in erection, order and controllable position and diameter etc., thereby being particularly favorable to manufacture and assembly of device.
Owner:SUN YAT SEN UNIV

Buckling constraint type steel-beam-and-column end-plate connection joint and steel structure building

The invention discloses a buckling constraint type steel-beam-and-column end-plate connection joint and a steel structure building, and belongs to the field of a building steel structure. The buckling constraint type steel-beam-and-column end-plate connection joint comprises a steel beam and a steel column; an end connecting piece is arranged at a joint of the steel beam and the steel column; the end connecting piece comprises a pair of horizontally arranged flange connecting plates and end plates arranged at the tail ends of the flange connecting plates; the free ends of the flange connecting plates are used for being connected with upper and lower flanges of the steel beam; both ends of the end plates are used for being connected with flanges of the steel column; the middle parts of the flange connecting plates are weakened regions. According to the buckling constraint type steel-beam-and-column end-plate connection joint and the steel structure building which are disclosed by the invention, seismic performance is superior, and ductility and the energy consumption ability of a steel frame structure can be obviously improved; plastic hinges are moved outside, so that appearance of the plastic hinges at the welded positions at the end parts of the steel beam is avoided; after an earthquake, the steel beam and the steel column are not damaged, and can be reused only by replacing or repairing the end connecting pieces; moreover, the buckling constraint type steel-beam-and-column end-plate connection joint is convenient to mount.
Owner:SHANDONG UNIV

Material with metal silicide nanostructure and method for making the same

The invention relates to a material with metal silicide nanometer structure and the preparation method thereof. The material comprises a metal silicide nanometer structure which is produced on an SOI substrate; the thickness of an insulation medium layer of the SOI substrate is 100 to 1000 nanometers, and the thickness of silicon thin film is 50 to 500 nanometers. The preparation method comprises the following steps: a required mask feature structure of nanometer structure is produced on the silicon thin film surface of the SOI substrate after cleaning, drying, spin coating positive photoresist, exposing, developing, and fixing; the silicon thin film of the SOI substrate is etched to the required nanometer structure by adopting a reactive ion etching, the etching depth is equal to the thickness of the silicon thin film, a metal thin film which is required by the metal silicide is deposited on the isolation layer which contains the silicon nanometer structure, then high temperatures anneal is performed to ensure that soild phase reaction is reacted between the metal and the silicon, thus to generate the metal silicide, the unreacted metal is removed through chemical etch, and then the metal silicide nanometer structure is formed. The method is simple, and the position and the dimension of the nanometer structure can be controlled.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI

Replaceable energy consumption connecting node of assembly-type rectangular steel pipe column-H-type steel beam

The invention discloses a replaceable energy consumption connecting node of an assembly-type rectangular steel pipe column-H-type steel beam. A rectangular steel tubular column, an H-type steel beam and a replaceable energy consumption connecting force transmitting component are included, the replaceable energy consumption connecting force transmitting component comprises an unequal limb angle steel energy consumption connecting member, a rectangular sleeve tube, a buckling preventing constraint cover plate and a vertical web plate connecting plate; the unequal limb angle steel energy consumption connecting member is connected with the rectangular steel tubular column and a wing plate of the H-shaped steel beam; the buckling preventing constraint cover plate is connected with a weakening area of the unequal limb angle steel energy consumption connecting member; the rectangular sleeve tube sleeves the outer side of the short limb of the unequal limb angle steel energy consumption connecting member and is connected with the rectangular steel tubular column through a bolt; the vertical web plate connecting plate is connected with the rectangular tubular column and the web plate of theH-shaped steel beam. The replaceable energy consumption connecting node has the advantages that the node force transmission is reasonable and reliable, the advantages of building industrialization can be achieved, the replaceable energy consumption connecting force transmitting component is adopted by a node position, the expandability and energy consumption capability of the node are improved, the steel tubular column is not damaged after vibration, and the steel tubular column can be used again by replacing connecting components.
Owner:TIANJIN UNIV

Orientation jetting and fracturing exploitation method for coal bed gas under coal mine

The invention discloses an orientation jetting and fracturing exploitation method for coal bed gas under a coal mine. The method includes the steps that a drilled hole along a coal bed is formed in a top plate or a bottom plate; a fracturing pipe set and a radial perforator are placed in a first perforation position; the hole is sealed; the fracturing pump set and the perforator are connected with corresponding pump sets respectively, and a jet flow channel is formed by the perforator and used for communicating the coal bed and the drilled hole; annular fracturing liquid is injected into the drilled hole in a pressure mode, and meanwhile annular pressure is kept; the coal bed is continuously jetted for preset time so that cracks can be formed on coal bodies and extend in the bottom direction of jetting holes of the coal bed; jetting and fracturing are stopped at the same time, the perforator is moved to a next jetting position to form the jet flow channel, and then fracturing liquid is pressurize and jetted continuously; the steps of independently jetting a rock stratum and pressurizing and jetting the coal bed are repeatedly executed until jetting and fracturing at all positions in the drilled hole is finished, and then the coal bed gas is extracted. The orientation jetting and fracturing exploitation method has the advantages that the trend and the quantity of the cracks are controllable, exploitation efficiency of the coal bed is high, the gas disaster of the mine can be effectively prevented and treated, and economic and social benefits can be improved.
Owner:重庆市能源投资集团科技有限责任公司

Stripping device for cable stripping machine capable of changing cutter extension length

A stripping device for a cable stripping machine capable of changing a cutter extension length relates to the technical field of cables, and comprises a shell. A middle part of the shell is movably connected with uniformly distributed cutter bars, inner sides of the cutter bars are fixedly connected with stripping cutters, the inner sides of the cutter bars are fixedly connected with springs I, and the two sides of a movable block are rotatably connected with pulleys. By using the stripping device for the cable stripping machine capable of changing the cutter extension length, a rotation discis cooperated with a limiting rod for use; during usage, a cable extends into the middle part of the shell; according to a diameter of the cable, the rotation disc is rotated and adjusted, the rotation disc drives a limiting rod to move through a limiting hole so that the limiting rod drives the cutter bar to move, the extending length of the stripping cutter is changed, the cable sheath is cut bythe stripping cutter; and the length of the stripping cutter cutting into the cable sheath is equal to a thickness of an outer sheath of the cable so that an effect of changing the extending length of the cutter is achieved, an application of the stripping device is wider, production cost is saved, and production efficiency is improved.
Owner:广东电网有限责任公司肇庆封开供电局

Thin-walled vane nine-point control variable-allowance milling method based on Newton interpolation

The invention provides a thin-walled vane nine-point control variable-allowance milling method based on Newton interpolation. Modeling is carried out by utilizing a three-dimensional modeling software, and an auxiliary surface and a boundary surface are formed, so that a driving surface is determined by utilizing a section line lofting process. Cutter machining paths are generated according to the driving surface, and the machining allowance of each cutter position point on each machining path is determined by adopting a Newton interpolation method. Finally, vanes are cyclically processed according to symmetrical milling rules. Compared with a traditional longitudinal fixed-allowance cutting and spiral milling method, the thin-walled vane nine-point control variable-allowance milling method has the advantages that technical problems, such as large torsional deformation, low contour precision, poor section position tolerance and difficult error control, in the machining process can be solved; and by adopting a Newton interpolation process allowance fine adjustment method, surface quality can be more comprehensively controlled, and problems, such as large bending deformation, poor section position tolerance and low surface contour precision, in the machining process can be effectively solved.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Method for enhancing heterogeneous molecule-doped molybdenum disulfide based on electronic dynamic regulation

ActiveCN108862388AThe degree and position of defect states are controllableEasy to operateMaterial nanotechnologyRaman scatteringPhysicsMicro nano
The invention discloses a method for enhancing heterogeneous molecule-doped molybdenum disulfide based on electronic dynamic regulation, and belongs to the field of micro-nano manufacturing. The method comprises the following steps of step 1, enabling a femtosecond laser pulse sequence to focus onto the single or multiple molybdenum disulfide layers at the surface of a substrate, controlling the processing parameters and processing location of the femtosecond laser pulse sequence, inducing the defect mode with controllable degree and location at the surface of the molybdenum disulfide meetingthe preset use requirements, and enabling the molybdenum disulfide with defect mode/active point to effectively adsorb oxygen in air under the air environment, so as to obtain the controllable oxygenmolecule P-doped single or multiple molybdenum disulfide layers; step 2, dripping an N-doped organic matter/inorganic matter/biological molecule solution onto the single molybdenum disulfide layer with defect mode/active point, and waiting for natural airing, so as to obtain the organic matter/inorganic matter/biological molecule N-doped single molybdenum disulfide layer. The method has the advantages that the degree and location of the defect mode are controllable, the operation is simple and flexible, and the like.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Novel scrap iron sweeping device used for machining

The invention discloses a novel scrap iron sweeping device used for machining. The novel scrap iron sweeping device structurally comprises a device body, a controller, a telescopic rod, an electromagnet, a dust collecting box and a scrap iron collecting box, the controller is arranged on the left side of the upper end of the device body, the telescopic rod is arranged on the right side of the upper end of the device body, the dust collecting box and the scrap iron collecting box are connected to the right side of the device body, the scrap iron collecting box is arranged at the upper end of the dust collecting box, a processor, a storage battery, a dust collector, a rotating motor and a driving motor are arranged separately inside the device body, driving wheels are symmetrically arrangedin the middle of the lower end of the device body and connected with the driving motor, a guiding wheel is arranged on the left side of the lower end of the device body, a supporting wheel is arrangedon the right side of the lower end of the device body, and a charging hole is formed in the right side of the supporting wheel. The novel scrap iron sweeping device is simple in structure, convenientto operate, more intelligent, more automatic, capable of effectively separating, adsorbing and collecting dust and scrap iron on the ground and good in clearing effect.
Owner:扬州天润传感技术有限公司

Multi-steady-state compliant Bricard mechanism and steady-state analysis method thereof

ActiveCN108515511AVariable topologyAdapt to actual working conditionsMachine part testingProgramme-controlled manipulatorAnalysis methodContinuous rotation
The invention discloses a multi-steady-state compliant Bricard mechanism and a steady-state analysis method thereof. The multi-steady-state compliant Bricard mechanism is formed by connecting a plurality of Bricard basic units in an end-to-end manner so as to form an annular closed structure; each Bricard basic unit comprises two flexible hinges and two rigid connecting parts, which the two flexible hinges are provided with different planes orthogonal to each other, and two rigid connecting parts are used for enabling the flexible hinges to be connected; every two flexible hinges are connectedthrough one rigid connecting part; one flexible hinge is connected to one flexible hinge of the adjacent Bricard basic unit through the other rigid connecting part; the two rigid connecting parts inthe same Bricard basic unit have to be equal in length; but the rigid connecting parts of different Bricard basic units do not have to be equal in length. The multi-steady-state compliant Bricard mechanism and the steady-state analysis method thereof have the advantages that the continuous rotation, multiple steady states and the like of a compliant triple Bricard mechanism can be achieved, meanwhile, the mechanism topology is changeable, the unit number is adjustable, and implementation and popularization are easy.
Owner:SOUTH CHINA UNIV OF TECH

Three-group nitride micro-nano light-emitting device with embedded active layer and manufacturing method

The invention discloses a three-group nitride micro-nano light-emitting device with an embedded active layer and a manufacturing method. The light-emitting device comprises an initial light-emitting device, a transparent conducting layer, a p-type electrode and an n-type electrode; the initial light-emitting device is sequentially provided with a substrate, a three-group nitride nucleating layer, a buffering layer, an n-type three-group nitride layer, imaging 5 masking film, a selective epitaxial growth n-type three-group nitride structure, selective epitaxial growth exposed masking film at the top of the n-type three-group nitride structure, the three-group nitride active layer and a p-type three-group nitride coverage layer from bottom to top. The three-group nitride active layer is arranged between a part, which is not masked and covered, between the selective epitaxial growth n-type three-group nitride structure and the p-type three-group nitride coverage layer; the transparent conducting layer is deposited to the front face of the initial light-emitting device, the p-type electrode is arranged on the transparent conducting layer, and the n-type electrode is arranged on the n-type three-group nitride layer or the bottom of the substrate. The light-emitting device (10) has the advantages of being controllable in position and size, stable in performance and ultra high in quantum efficiency.
Owner:SUN YAT SEN UNIV
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