Three-group nitride micro-nano light-emitting device with embedded active layer and manufacturing method

Abstract

The invention discloses a three-group nitride micro-nano light-emitting device with an embedded active layer and a manufacturing method. The light-emitting device comprises an initial light-emitting device, a transparent conducting layer, a p-type electrode and an n-type electrode; the initial light-emitting device is sequentially provided with a substrate, a three-group nitride nucleating layer, a buffering layer, an n-type three-group nitride layer, imaging 5 masking film, a selective epitaxial growth n-type three-group nitride structure, selective epitaxial growth exposed masking film at the top of the n-type three-group nitride structure, the three-group nitride active layer and a p-type three-group nitride coverage layer from bottom to top. The three-group nitride active layer is arranged between a part, which is not masked and covered, between the selective epitaxial growth n-type three-group nitride structure and the p-type three-group nitride coverage layer; the transparent conducting layer is deposited to the front face of the initial light-emitting device, the p-type electrode is arranged on the transparent conducting layer, and the n-type electrode is arranged on the n-type three-group nitride layer or the bottom of the substrate. The light-emitting device (10) has the advantages of being controllable in position and size, stable in performance and ultra high in quantum efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a Group III nitride micro-nano light-emitting device with an embedded active layer and a preparation method. Background technique [0002] Group-III nitrides (III-N) have become a hotspot in the research of semiconductor technology due to their characteristics of wide band gap, high thermal conductivity, high electron saturation drift velocity and large critical breakdown voltage. Group III nitrides GaN, AlN (bandgap 6.2eV), InN (bandgap 0.7eV) and their alloys cover the energy range from infrared to visible light and ultraviolet light, so they have a wide range of applications in the field of optoelectronics. Applications, such as high-power white LEDs, lasers, solar-blind detectors in the ultraviolet band, etc. At present, III-N-based LEDs, LDs and electronic devices have achieved commercial production, and are widely used in display backlight, lighting, inf...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of low quantum efficiency caused by dislocations in the Group-III nitride-based optoelectronic materials of light-emitting devices in the prior art, the present invention first proposes a Group-III nitride micro-nano light-emitting device with an embedded active layer. layer grown on a dislocation-free region III-nitride substrate material with extremely high quantum efficiency

[0006] Another object of the present invention is to propose a preparation method of a group-III nitride micro-nano light-emitting device with an embedded active layer, which solves the problem of low quantum efficiency caused by dislocations and InGaN quantum During the dot growth process, problems such as random distribution of positions and poor size uniformity of quantum dots are faced. By controlling the preparation process, the position and size of the active layer can be controlled, and an electroluminescent InGaN quantum dot light source can be realized.

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